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1. 发明授权

US07135255B2 Layout impact reduction with angled phase shapes 失效
标题翻译：具有角度相位形状的布局冲击减少
公开(公告)号：US07135255B2
公开(公告)日：2006-11-14
申请号：US10249317
申请日：2003-03-31
申请人： Scott J. Bukofsky , John K. DeBrosse , Marco Hug , Lars W. Liebmann , Daniel J. Nickel , Juergen Preuninger
发明人： Scott J. Bukofsky , John K. DeBrosse , Marco Hug , Lars W. Liebmann , Daniel J. Nickel , Juergen Preuninger
IPC分类号： G01F9/00
CPC分类号： G03F1/30
摘要： A phase shift mask shape that reduces line-end shortening at the critical feature without changing layout size increases required of requisite phase shift rules. The phase feature is given an angled extension, which includes the lithographic shortening value. This allows the critical shape to be designed much closer to the reference layer then it could without the angled extension feature. Phase mask extension features beyond a given device segment are significantly reduced by lengthening the feature along an uncritical portion; moving the feature reference point to the device layer; and flattening the phase extension feature into an L-shape or T-shape along the uncritical parts of a device segment. Applying these design rules allows a draw of the gate conductor under current conditions and puts phase shapes inside without extending the gate conductor dimensions to the next feature.
摘要翻译：减少关键特征而不改变布局尺寸的线端缩短的相移掩模形状增加了所需的相移规则。相位特征给出一个有角度的延伸，其包括光刻缩短值。这允许将临界形状设计得更接近参考层，然后它可以没有成角度的延伸特征。通过沿着非临界部分延长特征，显着减少了给定装置段之外的相位掩模延伸特征; 将特征参考点移动到设备层; 并且将相延伸特征沿着装置段的非关键部分平坦化为L形或T形。应用这些设计规则允许在当前条件下绘制栅极导体，并将相位形状置于内部，而不会将栅极导体尺寸延伸到下一个特征。

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