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1. 发明授权

US06915769B2 Variable valve system for internal combustion engine 有权
标题翻译：内燃机可变阀门系统
公开(公告)号：US06915769B2
公开(公告)日：2005-07-12
申请号：US10740581
申请日：2003-12-22
申请人： Satoshi Yoshikawa , Hideki Kanai
发明人： Satoshi Yoshikawa , Hideki Kanai
IPC分类号： F01L1/344 , F02D13/02 , F02D41/04 , F02D41/06 , F02D41/08 , F02M25/07 , F01L1/34
CPC分类号： F02D13/0219 , F01L1/3442 , F01L2800/00 , F01L2800/01 , F01L2800/03 , F02D13/0261 , F02D13/08 , F02D41/006 , F02D41/0225 , F02D41/042 , F02D41/065 , F02D41/08 , F02D2041/001 , F02M26/01 , Y02T10/18 , Y02T10/47
摘要： The opening timing of intake valves and/or the closing timing of exhaust valves driven to open and close by valve mechanisms is changed by a variable valve timing mechanism to change the valve overlap of the intake and exhaust valves. When vehicle stop detecting devices detect a stop of a vehicle, a control unit operates the variable valve timing mechanism to reduce the valve overlap.
摘要翻译：通过阀机构驱动打开和关闭的排气门的打开正时和/或关闭正时由改变进气门和排气门的气门重叠的可变气门正时机构改变。当车辆停止检测装置检测到车辆停止时，控制单元操作可变气门正时机构以减小气门重叠。

2. 发明授权

US08233695B2 Generating image inspection data from subtracted corner-processed design data 有权
标题翻译：从减角处理的设计数据生成图像检查数据
公开(公告)号：US08233695B2
公开(公告)日：2012-07-31
申请号：US11956087
申请日：2007-12-13
申请人： Satoshi Usui , Hideki Kanai , Koji Hashimoto
发明人： Satoshi Usui , Hideki Kanai , Koji Hashimoto
IPC分类号： G06K9/00 , G03F1/00
CPC分类号： G06T7/0006 , G06T2207/30148
摘要： A method of generating an inspection data used for inspecting an inspection-object pattern on a substrate, the inspection-object pattern formed by transferring a first mask pattern formed on a first mask and a second mask pattern formed on a second mask onto one layer on the substrate, a part of a first transferred pattern of the first mask pattern and a part of a second transferred pattern of the second mask pattern being overlapped on the layer. The method performs a corner process on each corner of a first design data of the first mask pattern and each corner of a second design data of the second mask pattern and generates an inspection data by performing a logical operation using the corner-processed first design data and the corner processed second design data.
摘要翻译：一种生成用于检查基板上的检查对象图案的检查数据的方法，所述检查对象图案通过将形成在第一掩模上的第一掩模图案和形成在第二掩模上的第二掩模图案转印到一个层上而形成衬底，第一掩模图案的第一转印图案的一部分和第二掩模图案的第二转印图案的一部分重叠在该层上。该方法对第一掩模图案的第一设计数据的第一设计数据和第二掩模图案的第二设计数据的每个角的每个角落执行拐角处理，并且通过使用经角落处理的第一设计数据执行逻辑运算来生成检查数据并且角落处理了第二个设计数据。

3. 发明授权

US07638244B2 Method of correcting mask data, method of manufacturing a mask and method of manufacturing a semiconductor device 失效
标题翻译：掩模数据校正方法，制造掩模的方法和制造半导体器件的方法
公开(公告)号：US07638244B2
公开(公告)日：2009-12-29
申请号：US11058175
申请日：2005-02-16
申请人： Hideki Kanai
发明人： Hideki Kanai
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method of correcting mask data performs a proximity effect correction process to a pattern shape of a photomask to form a photosensitive material film provided on a substrate to be processed or a film to be processed by using the photosensitive material film as a mask into a pattern of a desired-shape. Model-based proximity effect correction is performed to the pattern shape of the photomask to correct the pattern shape of the photomask, an estimated shape of the pattern in the photosensitive material film or the film to be processed is calculated on the basis of the pattern shape of the photomask subjected to the model-based proximity effect correction, an error between the calculated estimated shape and the desired shape is calculated, and rule-based proximity effect correction is performed to a predetermined interested portion on the basis of the calculated error to further correct the pattern shape of the photomask.
摘要翻译：校正掩模数据的方法对光掩模的图案形状进行邻近效应校正处理，以通过将感光材料膜用作掩模形成设置在待处理基板上的感光材料膜或待处理的膜的想要的形状。对光掩模的图案形状进行基于模型的接近效应校正，以校正光掩模的图案形状，基于图案形状计算感光材料膜中的图案的估计形状或待处理的膜经过基于模型的邻近效应校正的光掩模，计算出计算出的估计形状与期望形状之间的误差，并且基于计算出的误差对预定的感兴趣部分执行基于规则的邻近效应校正，以进一步校正光掩模的图案形状。

4. 发明授权

US06165907A Plasma etching method and plasma etching apparatus 失效
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US06165907A
公开(公告)日：2000-12-26
申请号：US850700
申请日：1997-05-02
申请人： Ikuo Yoneda , Hideki Kanai , Shinichi Ito
发明人： Ikuo Yoneda , Hideki Kanai , Shinichi Ito
IPC分类号： G03F1/26 , H01L21/3065 , H01L21/302 , H01L21/461
CPC分类号： G03F1/26 , H01J37/32706 , H01J2237/3345 , H01L21/3065
摘要： A plasma etching method includes the steps of forming an etching mask on a work piece, forming a patterned film, made of a material having an etching rate of 80% or more to 120% or less based on an etching rate for the work piece, on the work piece having the etching mask thereon, and etching the work piece and the patterned film formed thereon at the same time by use of a reactive gas plasma, wherein the film is formed with such a thickness that the thickness of a remaining portion of the film is equal to zero or more after the work piece is etched to a desired depth.
摘要翻译：等离子体蚀刻方法包括以下步骤：基于工件的蚀刻速率，在工件上形成蚀刻掩模，形成图案化膜，由蚀刻速率为80％以上至120％以下的材料制成，在其上具有蚀刻掩模的工件上，并且通过使用反应性气体等离子体同时蚀刻工件及其上形成的图案化膜，其中所述膜形成为使得所述膜的剩余部分的厚度在将工件蚀刻到期望的深度之后，该膜等于零或更多。

5. 发明授权

US07670755B2 Photomask correcting method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的光掩模校正方法及其制造方法
公开(公告)号：US07670755B2
公开(公告)日：2010-03-02
申请号：US12216051
申请日：2008-06-27
申请人： Hideki Kanai
发明人： Hideki Kanai
IPC分类号： G03F7/20
CPC分类号： G03F1/30 , G03F1/70 , G03F7/0035
摘要： A writing pattern data generating method for, in order to form a first photomask for use in a manufacturing method of a semiconductor device which including forming a first resist pattern on a mask film formed on a first film using the first photomask, forming a first mask pattern by etching the mask film, removing the first resist pattern, forming a second resist film on the mask film, forming a second resist pattern on the mask film, forming a second mask pattern by etching the mask film, removing the second resist pattern, and forming a first film pattern by etching the first film, the generating method comprising correcting a first pattern data in accordance with a difference between the first film pattern and the second mask pattern and a difference between the first resist pattern and the first mask pattern.
摘要翻译：一种写入图案数据生成方法，用于形成用于半导体器件的制造方法的第一光掩模，所述第一光掩模包括使用所述第一光掩模在形成在第一膜上的掩模膜上形成第一抗蚀剂图案，形成第一掩模通过蚀刻掩模膜，去除第一抗蚀剂图案，在掩模膜上形成第二抗蚀剂膜，在掩模膜上形成第二抗蚀剂图案，通过蚀刻掩模膜形成第二掩模图案，除去第二抗蚀剂图案，以及通过蚀刻所述第一膜形成第一膜图案，所述生成方法包括根据所述第一膜图案和所述第二掩模图案之间的差异以及所述第一抗蚀剂图案与所述第一掩模图案之间的差异校正第一图案数据。

6. 发明申请

US20090009775A1 Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle 失效
标题翻译：掩模版，光学系统监视装置，光学系统监视方法及制造掩模版的方法
公开(公告)号：US20090009775A1
公开(公告)日：2009-01-08
申请号：US12230269
申请日：2008-08-27
申请人： Takashi Sato , Masafumi Asano , Hideki Kanai
发明人： Takashi Sato , Masafumi Asano , Hideki Kanai
IPC分类号： G01B11/14
CPC分类号： G03F7/705 , G03F1/44 , G03F7/70525 , G03F7/70616 , G03F7/70641
摘要： A reticle has a mask substrate, a test pattern established on the mask substrate having an asymmetrical diffraction grating so as to generate positive first order diffracting light and negative first order diffracting light in different diffraction efficiencies, and a device pattern adjacent to the test pattern established on the mask substrate.
摘要翻译：掩模版具有掩模基板，在具有不对称衍射光栅的掩模基板上建立的测试图案，以产生不同衍射效率的正一级衍射光和负一阶衍射光，并且与已建立的测试图案相邻的器件图案在掩模基板上。

7. 发明授权

US07094504B2 Mask, manufacturing method for mask, and manufacturing method for semiconductor device 失效
公开(公告)号：US07094504B2
公开(公告)日：2006-08-22
申请号：US10668245
申请日：2003-09-24
申请人： Kyoko Izuha , Hideki Kanai , Soichi Inoue , Shingo Kanamitsu , Shinichi Ito
发明人： Kyoko Izuha , Hideki Kanai , Soichi Inoue , Shingo Kanamitsu , Shinichi Ito
IPC分类号： G01F9/00
CPC分类号： G03F1/30 , G03F1/32 , G03F7/70641 , G03F7/70683
摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

8. 发明申请

US20060083995A1 Method of correcting mask data, method of manufacturing a mask and method of manufacturing a semiconductor device 失效
公开(公告)号：US20060083995A1
公开(公告)日：2006-04-20
申请号：US11058175
申请日：2005-02-16
申请人： Hideki Kanai
发明人： Hideki Kanai
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： A method of correcting mask data performs a proximity effect correction process to a pattern shape of a photomask to form a photosensitive material film provided on a substrate to be processed or a film to be processed by using the photosensitive material film as a mask into a pattern of a desired-shape. Model-based proximity effect correction is performed to the pattern shape of the photomask to correct the pattern shape of the photomask, an estimated shape of the pattern in the photosensitive material film or the film to be processed is calculated on the basis of the pattern shape of the photomask subjected to the model-based proximity effect correction, an error between the calculated estimated shape and the desired shape is calculated, and rule-based proximity effect correction is performed to a predetermined interested portion on the basis of the calculated error to further correct the pattern shape of the photomask.

9. 发明申请

US20050048378A1 Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle 失效
标题翻译：掩模版，光学系统监视装置，光学系统监视方法及制造掩模版的方法
公开(公告)号：US20050048378A1
公开(公告)日：2005-03-03
申请号：US10890299
申请日：2004-07-14
申请人： Takashi Sato , Masafumi Asano , Hideki Kanai
发明人： Takashi Sato , Masafumi Asano , Hideki Kanai
IPC分类号： G01B11/00 , G01B11/25 , G01M11/02 , G03F1/26 , G03F1/60 , G03F1/68 , G03F7/20 , G03F7/207 , G03F9/00 , H01L21/027
CPC分类号： G03F7/705 , G03F1/44 , G03F7/70525 , G03F7/70616 , G03F7/70641
摘要： A reticle has a mask substrate, a test pattern established on the mask substrate having an asymmetrical diffraction grating so as to generate positive first order diffracting light and negative first order diffracting light in different diffraction efficiencies, and a device pattern adjacent to the test pattern established on the mask substrate.
摘要翻译：掩模版具有掩模基板，在具有不对称衍射光栅的掩模基板上建立的测试图案，以产生不同衍射效率的正一级衍射光和负一阶衍射光，并且与已建立的测试图案相邻的器件图案在掩模基板上。

10. 发明申请

US20090202924A1 METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：评估照相掩模的方法和制造半导体器件的方法
公开(公告)号：US20090202924A1
公开(公告)日：2009-08-13
申请号：US12360929
申请日：2009-01-28
申请人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
发明人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F1/84
摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.
摘要翻译：一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

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