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    • 3. 发明授权
    • Method of manufacturing oxide superconductor
    • 制造氧化物超导体的方法
    • US5652199A
    • 1997-07-29
    • US360407
    • 1994-12-21
    • Kazuyuki IsawaAyako YamamotoSeiji AdachiMakoto ItohHisao Yamauchi
    • Kazuyuki IsawaAyako YamamotoSeiji AdachiMakoto ItohHisao Yamauchi
    • C01G1/00C01G13/00C04B35/45H01B12/00H01B13/00H01L39/12H01L39/24C04B35/64
    • C04B35/45H01L39/2419
    • A method of manufacturing an oxide superconductor, including the steps of mixing oxide materials of the metals contained in an oxide superconductor represented by HgBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.8+y to prepare a powder mixture of the composition noted above, molding the powder mixture to prepare a molded body of a desired shape, and applying a heat treatment to the molded body within a hermetic container at a temperature sufficient for bringing about a solid phase reaction of the oxide materials for at least 20 hours. Also provided is a method of manufacturing an oxide superconductor, including the steps of mixing at least one additive element selected from the group consisting of Pb, Bi, Tl, Au, Pt, Ag, Cd and In with oxide materials of the metals contained in a Hg-series 1223 type oxide superconductor to prepare a powder mixture, molding the powder mixture to prepare a molded body of a desired shape, and applying a heat treatment to the molded body within a hermetic container at a temperature sufficient for bringing about a solid phase reaction of the oxide materials for at least 10 hours.
    • 一种制造氧化物超导体的方法,包括以下步骤:将由HgBa2Ca2Cu3O8 + y表示的氧化物超导体中所含的金属的氧化物材料混合,制备上述组合物的粉末混合物,模制该粉末混合物以制备 所需的形状,并且在足以使氧化物材料的固相反应至少20小时的温度下在密封容器内对成型体进行热处理。 还提供了一种制造氧化物超导体的方法,包括以下步骤:将选自Pb,Bi,Tl,Au,Pt,Ag,Cd和In中的至少一种添加元素与包含在其中的金属的氧化物材料混合 一种Hg系1223型氧化物超导体,以制备粉末混合物,模塑该粉末混合物以制备所需形状的成型体,并且在足以产生固体的温度下对密闭容器内的成型体进行热处理 氧化物材料的相位反应至少10小时。
    • 8. 发明申请
    • Driving circuit
    • 驱动电路
    • US20070285863A1
    • 2007-12-13
    • US11715431
    • 2007-03-08
    • Makoto Itoh
    • Makoto Itoh
    • H02H3/08
    • F02D41/28F01N3/22F02D2041/2058F02D2041/2093H01L2924/0002Y10T307/747Y10T307/76H01L2924/00
    • When a driving signal changes from L level to H level, a switching-circuit is turned on. Then, a gate current flows from a booster circuit to MOSFET through the switching circuit and a resistor. A gate monitor circuit outputs a drive abnormality detection signal of L level when the gate current exceeds a predetermined threshold value. A switching circuit and MOSFET are also similarly driven by a driving signal, and a gate monitor circuit also similarly outputs a drive abnormality detection signal of the L level. When the drive abnormality detection signal changes to the L level, the driving signals are brought to the L level, and the MOSFETs are separated from the booster circuit.
    • 当驱动信号从L电平变为H电平时,开关电路导通。 然后,栅极电流通过开关电路和电阻器从升压电路流向MOSFET。 当栅极电流超过预定阈值时,栅极监视电路输出L电平的驱动异常检测信号。 开关电路和MOSFET也类似地由驱动信号驱动,栅极监视电路也类似地输出L电平的驱动异常检测信号。 当驱动异常检测信号变为L电平时,驱动信号变为L电平,MOSFET与升压电路分离。