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    • 1. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US09070549B2
    • 2015-06-30
    • US12680799
    • 2008-09-22
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • B08B5/02H01L21/02H01L21/67
    • H01L21/02052H01L21/67028
    • A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
    • 在将晶片浸入清洗槽中的清洗液体的状态下,将干燥气体从大致水平方向或垂直向下方向向大致水平方向,倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中,其中干燥气体被供应到干燥室中。 此时,在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下,将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后,干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。
    • 2. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    • 基板处理装置和基板处理方法
    • US20100218791A1
    • 2010-09-02
    • US12680799
    • 2008-09-22
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • B08B3/00
    • H01L21/02052H01L21/67028
    • A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
    • 在将晶片浸入清洗槽中的清洗液体的状态下,将干燥气体从大致水平方向或垂直向下方向向大致水平方向,倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中,其中干燥气体被供应到干燥室中。 此时,在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下,将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后,干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。
    • 9. 发明授权
    • Substrate processing apparatus, substrate processing method and storage medium
    • 基板处理装置,基板处理方法和存储介质
    • US08778092B2
    • 2014-07-15
    • US13042645
    • 2011-03-08
    • Hiroshi TanakaHironobu HyakutakeTakashi Uno
    • Hiroshi TanakaHironobu HyakutakeTakashi Uno
    • B08B3/04B08B5/02F26B5/00
    • H01L21/67057H01L21/67028
    • There is provided a substrate processing method including cleaning a substrate by immersing the substrate in a cleaning solution in a longitudinal direction while the cleaning solution is supplied to a cleaning tank; transferring the substrate picked up from the cleaning tank to a drying chamber while holding the substrate in a longitudinal direction; and drying the substrate in the drying chamber communicating with an upper area of the cleaning tank by alternately supplying a first drying gas containing vapor of a solvent for removing a liquid and a second drying gas without containing the vapor of the solvent for removing the liquid to an area where the substrate is exposed between the upper area of the cleaning tank and the drying chamber after an upper end of the cleaned substrate is picked up from a liquid surface of the cleaning solution.
    • 提供了一种基板处理方法,包括通过在将清洁溶液供应到清洗槽的同时将基板浸入清洁溶液中而沿纵向清洗基板; 将从所述清洗槽拾取的所述基板沿长度方向保持所述基板; 以及通过交替地供给包含用于除去液体的溶剂的蒸气的第一干燥气体和第二干燥气体来干燥所述干燥室中与所述清洗槽的上部区域连通的基板,而不将所述溶剂的蒸气除去以除去所述液体 从清洗液的液面取出基板在清洗槽的上部区域与清洗后的基板的上端之间的干燥室之间露出的区域。
    • 10. 发明授权
    • Control apparatus and control method for internal combustion engine
    • 内燃机控制装置及控制方法
    • US08746211B2
    • 2014-06-10
    • US13031408
    • 2011-02-21
    • Koji AsoHiroshi Tanaka
    • Koji AsoHiroshi Tanaka
    • F02D41/06
    • F02D41/0025F02D41/0082F02D41/062F02D2200/0406
    • A control apparatus for an internal combustion engine starts the internal combustion engine by initiating combustion in cylinders belonging to a first cylinder group, from among a plurality of cylinders that make up the internal combustion engine. The control apparatus monitors a change in an amount of negative pressure generated in an intake pipe when the internal combustion engine is started, and obtains information related to an alcohol concentration of fuel used in the internal combustion engine. The control apparatus also calculates a fuel injection quantity necessary to initiate combustion in cylinders belonging to a second cylinder group, based on the amount of negative pressure generated in the intake pipe and the alcohol concentration of the fuel, and initiates combustion in each cylinder belonging to the second cylinder group when the necessary fuel injection quantity enters a range of quantities that are able to be injected by corresponding injectors.
    • 用于内燃机的控制装置通过在构成内燃机的多个气缸中启动属于第一气缸组的气缸中的燃烧来启动内燃机。 控制装置监视内燃机启动时在进气管中产生的负压量的变化,并获得与内燃机中使用的燃料的酒精浓度相关的信息。 控制装置还基于进气管中产生的负压量和燃料的酒精浓度,计算属于第二气缸组的气缸中开始燃烧所需的燃料喷射量,并且在每个气缸属于 当必要的燃料喷射量进入能够由相应的喷射器喷射的量的范围时,第二气缸组。