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1. 发明申请

US20080007920A1 Loading driving device 有权
标题翻译：装载驱动装置
公开(公告)号：US20080007920A1
公开(公告)日：2008-01-10
申请号：US11806467
申请日：2007-05-31
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H02M7/537 , H05K7/20
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

2. 发明授权

US07821069B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821069B2
公开(公告)日：2010-10-26
申请号：US12010111
申请日：2008-01-22
申请人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
发明人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
IPC分类号： H01L23/62
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
摘要翻译：半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。每个电阻元件包括设置在两侧的电阻垫。每个电容元件包括设置在两侧的电容焊盘。除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

3. 发明申请

US20100238632A1 Load driving device 有权
标题翻译：负载驱动装置
公开(公告)号：US20100238632A1
公开(公告)日：2010-09-23
申请号：US12801187
申请日：2010-05-27
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H05K7/20
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

4. 发明申请

US20090127605A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090127605A1
公开(公告)日：2009-05-21
申请号：US12010111
申请日：2008-01-22
申请人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
发明人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
IPC分类号： H01L29/66 , H01L21/66
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
摘要翻译：半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。每个电阻元件包括设置在两侧的电阻垫。每个电容元件包括设置在两侧的电容焊盘。除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

5. 发明授权

US08102047B2 Load driving device 有权
标题翻译：负载驱动装置
公开(公告)号：US08102047B2
公开(公告)日：2012-01-24
申请号：US12801187
申请日：2010-05-27
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H01L23/34 , H01L23/10
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

6. 发明授权

US07755187B2 Load driving device 有权
公开(公告)号：US07755187B2
公开(公告)日：2010-07-13
申请号：US11806467
申请日：2007-05-31
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H01L23/34 , H01L23/495
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

7. 发明授权

US07639060B2 Level shift circuit 有权
标题翻译：电平移位电路
公开(公告)号：US07639060B2
公开(公告)日：2009-12-29
申请号：US12076521
申请日：2008-03-19
申请人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
发明人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
IPC分类号： H03L5/00
CPC分类号： H03K19/018571 , H01L27/0251 , H03K5/003 , H03K19/00361
摘要： A level shift circuit includes a first capacitor circuit including capacitors connected in series between a ground and a predetermined potential, a first trigger circuit coupled to the predetermined potential side of the first capacitor circuit, an input terminal coupled to the ground side of the first capacitor circuit, a second capacitor circuit including capacitors connected in series between the ground and the predetermined potential, a second trigger circuit coupled to the predetermined potential side of the second capacitor circuit, an inverter coupled between the input terminal and the ground potential side of the second capacitor circuit, and a SR latch circuit having a first input coupled to an output of the first trigger circuit and a second input coupled to an output of the second trigger circuit.
摘要翻译：电平移位电路包括：第一电容器电路，包括串联连接在接地和预定电位之间的电容器;耦合到第一电容器电路的预定电位侧的第一触发电路;耦合到第一电容器的接地侧的输入端子电路，包括串联连接在接地和预定电位之间的电容器的第二电容器电路，耦合到第二电容器电路的预定电位侧的第二触发电路，耦合在第二电容器的输入端子和地电位侧之间的反相器电容器电路和SR锁存电路，其具有耦合到第一触发电路的输出的第一输入和耦合到第二触发电路的输出的第二输入。

8. 发明授权

US06768183B2 Semiconductor device having bipolar transistors 失效
标题翻译：具有双极晶体管的半导体器件
公开(公告)号：US06768183B2
公开(公告)日：2004-07-27
申请号：US10125582
申请日：2002-04-19
申请人： Shigeki Takahashi , Satoshi Shiraki , Hiroaki Himi , Hiroyuki Ban , Osamu Seya
发明人： Shigeki Takahashi , Satoshi Shiraki , Hiroaki Himi , Hiroyuki Ban , Osamu Seya
IPC分类号： H01L2900
CPC分类号： H01L27/0826 , H01L27/0623
摘要： An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transistor has an n type emitter region, an n type collector region and a p type base region and is formed in a PNP forming region. Only one conductive type burying region is formed in at least one of the NPN forming region and the PNP forming region. A current that flows from the p type emitter region to the n type base region flows in the n type base region in a direction perpendicular to the substrate.
摘要翻译：在半导体衬底中形成NPN双极晶体管和PNP双极晶体管。 NPN双极晶体管具有p型发射极区域，p型集电极区域和n型基极区域，并且形成在NPN形成区域中。 PNP双极晶体管具有n型发射极区域，n型集电极区域和p型基极区域，并且形成在PNP形成区域中。在NPN形成区域和PNP形成区域的至少一个中仅形成一个导电型掩埋区域。从p型发射极区域流向n型基极区域的电流在与基板垂直的方向上流入n型基极区域。

9. 发明申请

US20080231340A1 Level shift circuit 有权
标题翻译：电平移位电路
公开(公告)号：US20080231340A1
公开(公告)日：2008-09-25
申请号：US12076521
申请日：2008-03-19
申请人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
发明人： Satoshi Shiraki , Hiroyuki Ban , Junichi Nagata
IPC分类号： H03L5/00
CPC分类号： H03K19/018571 , H01L27/0251 , H03K5/003 , H03K19/00361
摘要： A level shift circuit includes a first capacitor circuit including capacitors connected in series between a ground and a predetermined potential, a first trigger circuit coupled to the predetermined potential side of the first capacitor circuit, an input terminal coupled to the ground side of the first capacitor circuit, a second capacitor circuit including capacitors connected in series between the ground and the predetermined potential, a second trigger circuit coupled to the predetermined potential side of the second capacitor circuit, an inverter coupled between the input terminal and the ground potential side of the second capacitor circuit, and a SR latch circuit having a first input coupled to an output of the first trigger circuit and a second input coupled to an output of the second trigger circuit.
摘要翻译：电平移位电路包括：第一电容器电路，包括串联连接在接地和预定电位之间的电容器;耦合到第一电容器电路的预定电位侧的第一触发电路;耦合到第一电容器的接地侧的输入端子电路，包括串联连接在接地和预定电位之间的电容器的第二电容器电路，耦合到第二电容器电路的预定电位侧的第二触发电路，耦合在第二电容器的输入端子和地电位侧之间的反相器电容器电路和SR锁存电路，其具有耦合到第一触发电路的输出的第一输入和耦合到第二触发电路的输出的第二输入。

10. 发明授权

US09713802B2 Method and apparatus for manufacturing liquid microspheres 有权
公开(公告)号：US09713802B2
公开(公告)日：2017-07-25
申请号：US12473906
申请日：2009-05-28
申请人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
发明人： Hiroyuki Ban , Koji Noishiki , Kazuto Okada , Seiichi Yamamoto
IPC分类号： B01J19/26 , B01F3/08 , B01J19/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00837 , B01J2219/00873 , B01J2219/00889 , B01J2219/00891 , B01J2219/00984
摘要： The present invention provides microsphere manufacturing method and apparatus capable of stable obtaining microspheres of a desired size and reducing facility cost. According to the method and the apparatus, to manufacture microspheres made of a second liquid in a first liquid, the first liquid is supplied into a first channel to flow therein and the second liquid is supplied to an intermediate part of the first channel through a second channel. The supply velocities of the first and second liquids are set such that the second liquid closes the first channel and the closing part of the second liquid is cut off due to a pressure difference between an upstream side and a downstream side to form microspheres.

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