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1. 发明授权

US08502285B2 Thin-film transistor and intermediate of thin-film transistor 有权
标题翻译：薄膜晶体管和薄膜晶体管的中间体
公开(公告)号：US08502285B2
公开(公告)日：2013-08-06
申请号：US12737797
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765 , H01L29/78621
摘要： This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.
摘要翻译：该薄膜晶体管包括漏电极膜和源极电极膜，它们都包括复合铜合金膜，该复合铜合金膜包括形成为与阻挡膜接触的铜合金底层和形成的Cu层在铜合金底层上。铜合金底层的一个方面包括含有2mol％至30mol％的Ca，20mol％至50mol％的氧以及Cu和不可避免的杂质作为余量的浓缩层。铜合金底层的另一方面包括含有2摩尔％至30摩尔％的Ca，1摩尔％至10摩尔％的浓度的浓缩层，其中选自由Al，Sn和Sb组成的组中的一种或多种，20mol 50％摩尔的氧，以及Cu和不可避免的杂质作为天平。

2. 发明授权

US08384083B2 Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films 有权
标题翻译：阻挡膜和漏电极与源电极膜之间具有高粘合强度的薄膜晶体管
公开(公告)号：US08384083B2
公开(公告)日：2013-02-26
申请号：US12998283
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765
摘要： This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
摘要翻译：该薄膜晶体管包括阻挡膜和电极膜之间的粘合强度增强膜。每个粘合强度增强膜由两个区域组成，包括（a）在电极膜侧形成的纯铜区域，和（b）形成在与阻挡膜接触的界面部分中的成分浓缩区域，并且包括Cu，Ca，氧和Si作为组分。在组分浓缩区域的厚度方向上的Ca和氧的浓度分布中，含Ca峰的Ca的最大含量为5〜20at％，含氧量的最大含量峰分别在30至50at％的范围内。

3. 发明申请

US20110193088A1 THIN-FILM TRANSISTOR HAVING HIGH ADHESIVE STRENGTH BETWEEN BARRIER FILM AND DRAIN ELECTRODE AND SOURCE ELECTRODE FILMS 有权
标题翻译：薄膜和漏极电极和源电极膜之间具有高粘合强度的薄膜晶体管
公开(公告)号：US20110193088A1
公开(公告)日：2011-08-11
申请号：US12998283
申请日：2009-09-24
申请人： Satoru Mori , Shozo Komiyama
发明人： Satoru Mori , Shozo Komiyama
IPC分类号： H01L29/786
CPC分类号： H01L29/458 , H01L29/66765
摘要： This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
摘要翻译：该薄膜晶体管包括阻挡膜和电极膜之间的粘合强度增强膜。每个粘合强度增强膜由两个区域组成，包括（a）在电极膜侧形成的纯铜区域，和（b）形成在与阻挡膜接触的界面部分中的成分浓缩区域，并且包括Cu，Ca，氧和Si作为组分。在组分浓缩区域的厚度方向上的Ca和氧的浓度分布中，含Ca峰的Ca的最大含量为5〜20at％，含氧量的最大含量峰分别在30至50at％的范围内。

4. 发明申请

US20120193589A1 SILVER ALLOY TARGET FOR FORMING REFLECTION ELECTRODE FILM FOR ORGANIC EL ELEMENT, AND METHOD FOR MANUFACTURING THE SILVER ALLOY TARGET 有权
标题翻译：用于形成有机EL元件的反射电极膜的银合金靶，以及制造银合金靶的方法
公开(公告)号：US20120193589A1
公开(公告)日：2012-08-02
申请号：US13500224
申请日：2010-10-05
申请人： Shozo Komiyama , Ikuo Ito
发明人： Shozo Komiyama , Ikuo Ito
IPC分类号： C09D5/33 , B23P17/00
CPC分类号： C23C14/14 , C22C5/06 , C23C14/3414 , H01L51/5218 , Y10T428/21
摘要： Disclosed is a silver alloy target for forming a reflective electrode film for an organic EL element, which has a component composition containing 0.1% to 1.5% by mass of In and the remainder composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150 to 400 μm, and the dispersion of the grain diameter of the crystal grain is 20% of the average grain diameter or less.
摘要翻译：公开了一种用于形成有机EL元件的反射电极膜的银合金靶，其具有含有0.1〜1.5质量％的In，其余由Ag和不可避免的杂质构成的成分组成。合金的晶粒的平均粒径为150〜400μm，晶粒的粒径分布为平均粒径的20％以下。

5. 发明授权

US08821769B2 Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing the silver alloy target 有权
标题翻译：用于形成有机EL元件用反射电极膜的银合金靶及其制造方法
公开(公告)号：US08821769B2
公开(公告)日：2014-09-02
申请号：US13500224
申请日：2010-10-05
申请人： Shozo Komiyama , Ikuo Ito
发明人： Shozo Komiyama , Ikuo Ito
IPC分类号： F21V9/00 , G02B5/02 , G02C7/10 , G02F1/361 , G03B11/00 , B21B27/06
CPC分类号： C23C14/14 , C22C5/06 , C23C14/3414 , H01L51/5218 , Y10T428/21
摘要： Disclosed is a silver alloy target for forming a reflective electrode film for an organic EL element, which has a component composition containing 0.1% to 1.5% by mass of In and the remainder composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150 to 400 μm, and the dispersion of the grain diameter of the crystal grain is 20% of the average grain diameter or less.
摘要翻译：公开了一种用于形成有机EL元件的反射电极膜的银合金靶，其具有含有0.1〜1.5质量％的In，其余由Ag和不可避免的杂质构成的成分组成。合金的晶粒的平均粒径为150〜400μm，晶粒的粒径分布为平均粒径的20％以下。

6. 发明授权

US08815149B2 Semi-reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming semi-reflective film or reflective film for optical recording medium 有权
标题翻译：用于光学记录介质的半反射膜和反射膜，以及用于形成半反射膜的Ag合金溅射靶或用于光学记录介质的反射膜
公开(公告)号：US08815149B2
公开(公告)日：2014-08-26
申请号：US12093011
申请日：2006-12-28
申请人： Shozo Komiyama , Gou Yamaguchi , Akifumi Mishima
发明人： Shozo Komiyama , Gou Yamaguchi , Akifumi Mishima
IPC分类号： C22C5/08 , C22C5/06 , C23C14/34
CPC分类号： C23C14/3414 , C22C5/06 , C22C5/08 , C22F1/14 , C23C14/205 , G11B7/2534 , G11B7/259 , G11B7/266
摘要： A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.
摘要翻译：一种用于光学记录介质的半反射膜和反射膜，其由具有0.001至0.1质量％的Ca，0.05至1质量％的Mg，以及其余含有Ag的组成的银合金制成，不可避免的杂质和由0.001〜0.1质量％的Ca，0.05〜1质量％的Mg组成的银合金，余量含有Ag和不可避免的杂质的靶; 以及由具有0.05〜1质量％的Mg，0.05〜1质量％的Eu，Pr，Ce中的一种或多种的组成的银合金构成的光记录介质用半反射膜，以及 Sm和其余含有Ag和不可避免的杂质的Ag合金溅射靶，以及用于形成用于光学记录介质的半反射膜的Ag合金溅射靶，其由具有由0.05至1质量％的Mg组成的银合金制成，0.05〜1质量％的Eu，Pr，Ce和Sm中的一种或多种，剩余部分含有Ag和不可避免的杂质。

7. 发明授权

US08268141B2 High-strength sputtering target for forming protective film for optical recording medium 有权
标题翻译：用于形成光记录介质保护膜的高强度溅射靶
公开(公告)号：US08268141B2
公开(公告)日：2012-09-18
申请号：US12303590
申请日：2007-06-08
申请人： Shoubin Zhang , Hayato Sasaki , Shozo Komiyama , Akifumi Mishima
发明人： Shoubin Zhang , Hayato Sasaki , Shozo Komiyama , Akifumi Mishima
IPC分类号： C23C14/34 , C01B33/20 , C01B33/46
CPC分类号： C04B35/488 , C04B35/119 , C04B35/16 , C04B35/18 , C04B35/4885 , C04B2235/3225 , C04B2235/3227 , C04B2235/3244 , C04B2235/3246 , C04B2235/3286 , C04B2235/3418 , C04B2235/3463 , C04B2235/656 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C23C14/083 , C23C14/3414 , G11B7/2578 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715
摘要： A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of Al6Si2O13, La2SiO5, or In2Si2O7 is formed in a base of the target.
摘要翻译：一种用于形成光记录介质保护膜的高强度溅射靶，其通过烧结含有10％至70％的氧化锆或氧化铪和50％或更低（超过0％）的混合粉末而获得，的二氧化硅和0.1〜8.4％的氧化钇，余量包含氧化铝，氧化镧或氧化铟和不可避免的杂质，其中Al 6 Si 2 O 13，La 2 SiO 5或In 2 Si 2 O 7的复合氧化物相形成在目标。

8. 发明授权

US08105467B2 High strength sputtering target for forming phosphor film in electroluminescence element 有权
标题翻译：用于在电致发光元件中形成荧光膜的高强度溅射靶
公开(公告)号：US08105467B2
公开(公告)日：2012-01-31
申请号：US11913780
申请日：2006-05-01
申请人： Shoubin Zhang , Shozo Komiyama , Akifumi Mishima
发明人： Shoubin Zhang , Shozo Komiyama , Akifumi Mishima
IPC分类号： C23C14/34
CPC分类号： C09K11/7728 , C23C14/3414
摘要： Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAl4 intermetallic compound phase and a Ba7Al13 intermetallic compound phase, and Eu forms a solid solution with Ba in the BaAl4 intermetallic compound and in the Ba7Al13 intermetallic compound, respectively.
摘要翻译：提供一种用于在电致发光元件中形成荧光膜的溅射靶，即使在长时间在大气中放置时也能够保持高强度。靶的化学成分为Al：20〜50质量％，Eu：1〜10质量％，余量含有Ba和不可避免的杂质，并且具有其中Eu被固溶的Al和Al形成金属间化合物的结构其中Eu固溶的Ba的金属间化合物相和Al包括BaAl4金属间化合物相和Ba7Al13金属间化合物相，Eu在BaAl 4金属间化合物和Ba7Al13金属间化合物中形成Ba的固溶体化合物。

9. 发明申请

US20090169417A1 SEMI-REFLECTIVE FILM AND REFLECTIVE FILM FOR OPTICAL RECORDING MEDIUM, AND Ag ALLOY SPUTTERING TARGET FOR FORMING SEMI-REFLECTIVE FILM OR REFLECTIVE FILM FOR OPTICAL RECORDING MEDIUM 有权
标题翻译：用于光记录介质的半反射膜和反射膜，以及用于形成用于光记录介质的半反射膜或反射膜的银合金溅射靶
公开(公告)号：US20090169417A1
公开(公告)日：2009-07-02
申请号：US12093011
申请日：2006-12-28
申请人： Shozo Komiyama , Gou Yamaguchi , Akifumi Mishima
发明人： Shozo Komiyama , Gou Yamaguchi , Akifumi Mishima
IPC分类号： C22C5/08 , C22C5/06 , C23C14/34
CPC分类号： C23C14/3414 , C22C5/06 , C22C5/08 , C22F1/14 , C23C14/205 , G11B7/2534 , G11B7/259 , G11B7/266
摘要： A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.
摘要翻译：一种用于光学记录介质的半反射膜和反射膜，其由具有0.001至0.1质量％的Ca，0.05至1质量％的Mg，以及其余含有Ag的组成的银合金制成，不可避免的杂质和由0.001〜0.1质量％的Ca，0.05〜1质量％的Mg组成的银合金，余量含有Ag和不可避免的杂质的靶; 以及由具有0.05〜1质量％的Mg，0.05〜1质量％的Eu，Pr，Ce中的一种或多种的组成的银合金构成的光记录介质用半反射膜，以及 Sm和其余含有Ag和不可避免的杂质的Ag合金溅射靶，以及用于形成用于光学记录介质的半反射膜的Ag合金溅射靶，其由具有由0.05至1质量％的Mg组成的银合金制成，0.05〜1质量％的Eu，Pr，Ce和Sm中的一种或多种，剩余部分含有Ag和不可避免的杂质。

10. 发明授权

US5338331A Low-permeability high-strength target material for the formation of thin magnetooptical recording films 失效
标题翻译：用于形成薄磁光记录膜的低磁导率高强度目标材料
公开(公告)号：US5338331A
公开(公告)日：1994-08-16
申请号：US892361
申请日：1992-06-02
申请人： Kenichi Hijikata , Shozo Komiyama , Hitoshi Maruyama
发明人： Kenichi Hijikata , Shozo Komiyama , Hitoshi Maruyama
IPC分类号： C22C19/00 , C22C38/00 , C23C14/14 , C23C14/34 , G11B11/105 , H01F41/18 , B22F9/00
CPC分类号： C23C14/14 , G11B11/10582 , G11B11/10586 , H01F41/183
摘要： A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.
摘要翻译：一种用于形成薄磁光记录膜的高强度目标材料，其具有以下结构：（a）20-75％的复相，其中至少一种结晶的铁族金属在树枝状，针状或在至少一种第一稀土金属和至少一种铁族金属的金属间化合物的基体中，占总组合物的5-40％的比例的块形式; （b）15-40％的至少一种第二稀土金属的稀土金属相; 和（c）剩余部分是复合相和稀土金属相的反应相的金属间化合物相，所有百分比均为面积，其中第一和第二稀土金属相同或不同。目标材料具有这样的低磁导率，即通过具有高利用率的磁控溅射工艺可以形成薄磁光记录膜。

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