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1. 发明授权

US08720022B2 Method of producing an acoustic wave device 有权
标题翻译：制造声波装置的方法
公开(公告)号：US08720022B2
公开(公告)日：2014-05-13
申请号：US12647071
申请日：2009-12-24
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda
IPC分类号： H03H3/013 , H01L41/047
CPC分类号： H03H3/10 , H03H9/0222 , H03H9/02929
摘要： A method of producing an acoustic wave device includes: forming an interdigital electrode on a piezoelectric substrate; forming a barrier film so as to cover the interdigital electrode; forming a medium on the barrier film; measuring a frequency characteristic of an acoustic wave excited by the interdigital electrode; and forming, in an excitation region, an adjustment region having a thickness different from other portions by patterning the barrier film or further providing an adjustment film. When forming the adjustment region, an area T of the adjusting area is adjusted in accordance with the measured frequency characteristic.
摘要翻译：声波装置的制造方法包括：在压电基板上形成叉指电极; 形成阻挡膜以覆盖叉指电极; 在阻挡膜上形成介质; 测量由叉指电极激发的声波的频率特性; 以及通过对所述阻挡膜进行图案化或进一步提供调整膜，在激发区域中形成具有与其它部分不同的厚度的调节区域。在形成调整区域时，根据测定的频率特性调整调整区域的面积T.

2. 发明授权

US08264299B2 Boundary acoustic wave device and communication equipment 有权
标题翻译：边界声波装置及通讯设备
公开(公告)号：US08264299B2
公开(公告)日：2012-09-11
申请号：US12711965
申请日：2010-02-24
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda
IPC分类号： H03H9/25 , H03H9/145
CPC分类号： H03H9/02834 , H03H9/0222 , H03H9/02653
摘要： A boundary acoustic waves device includes a piezoelectric substrate having piezoelectricity, interdigitated electrodes formed on the piezoelectric substrate, a first medium formed on the piezoelectric substrate so as to cover the interdigitated electrode, and a second medium formed on the first medium. The interdigitated electrodes include a plurality of electrode fingers and bus bars that connect ends of the plurality of electrode fingers. A third medium is formed on the first medium. The second medium and the third medium are in contact with the first medium. The first medium, the second medium, and the third medium are formed of different materials. The first medium, the second medium, and the third medium are different in a ratio in length of a part with the third medium formed with respect to a length of a propagation path of boundary acoustic waves in a cross-section perpendicular to a longitudinal direction of the electrode fingers, in the longitudinal direction of the electrode fingers.
摘要翻译：声界面波装置包括具有压电性的压电基板，形成在压电基板上的叉指电极，形成在压电基板上以覆盖交叉指向电极的第一介质，以及形成在第一介质上的第二介质。交叉电极包括连接多个电极指的端部的多个电极指和汇流条。在第一介质上形成第三介质。第二介质和第三介质与第一介质接触。第一介质，第二介质和第三介质由不同的材料形成。第一介质，第二介质和第三介质在与纵向方向垂直的截面中相对于边界声波的传播路径的长度形成的部分的长度的比例不同的电极指的长度方向。

3. 发明授权

US07915786B2 Elastic boundary wave device 有权
标题翻译：弹性边界波装置
公开(公告)号：US07915786B2
公开(公告)日：2011-03-29
申请号：US12705565
申请日：2010-02-12
申请人： Takashi Matsuda , Satoru Matsuda , Michio Miura
发明人： Takashi Matsuda , Satoru Matsuda , Michio Miura
IPC分类号： H01L41/08
CPC分类号： H03H9/0222 , H03H9/02574 , H03H9/6433
摘要： An elastic boundary wave device of the present invention includes a plurality of elastic boundary wave elements. The elastic boundary wave elements each include a piezoelectric material layer, an electrode disposed over the piezoelectric material layer, a first dielectric layer formed over the piezoelectric material layer so as to cover the electrode, and a second dielectric layer formed over the first dielectric layer. An acoustic velocity of the second dielectric layers is faster than an acoustic velocity of the first dielectric layers, and the acoustic velocity of the second dielectric layer of at least one elastic boundary wave element from among the plurality of elastic boundary wave elements is different from the acoustic velocity of the second dielectric layer of another of the elastic boundary wave elements. This enables improving the degree of suppression in use as a filter in the elastic boundary wave device.
摘要翻译：本发明的弹性边界波装置包括多个弹性边界波元件。弹性边界波元件各自包括压电材料层，设置在压电材料层上的电极，形成在压电材料层上以覆盖电极的第一电介质层，以及形成在第一介电层上的第二电介质层。第二电介质层的声速比第一电介质层的声速更快，并且多个弹性边界波元件中的至少一个弹性边界波元件的第二电介质层的声速不同于另一弹性边界波元件的第二电介质层的声速。由此，能够提高弹性边界波装置中的滤波器的使用抑制度。

4. 发明授权

US07688161B2 Acoustic wave device and filter using the same 有权
标题翻译：声波装置和滤波器使用相同
公开(公告)号：US07688161B2
公开(公告)日：2010-03-30
申请号：US11976441
申请日：2007-10-24
申请人： Michio Miura , Satoru Matsuda , Shogo Inoue , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Michio Miura , Satoru Matsuda , Shogo Inoue , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H03H9/64 , H03H9/52 , H03H9/25
CPC分类号： H03H9/6483
摘要： An acoustic wave device includes a piezoelectric substrate, a resonator having comb electrodes that are provided above the piezoelectric substrate and excite an acoustic wave, and a capacitor that is provided above the piezoelectric substrate and is connected in series or parallel with the resonator, the capacitor including electrodes that horizontally face each other above the piezoelectric substrate. The electrodes of the capacitor are further from the piezoelectric substrate than the comb electrodes of the resonator.
摘要翻译：声波装置包括压电基板，具有设置在压电基板上方的梳状电极并激发声波的谐振器，以及设置在压电基板上方并与谐振器串联或并联连接的电容器，电容器包括在压电基板上水平面对的电极。与谐振器的梳状电极相比，电容器的电极比压电基片更远。

5. 发明授权

US07471171B2 Elastic boundary wave device, resonator, and filter 有权
标题翻译：弹性边界波器件，谐振器和滤波器
公开(公告)号：US07471171B2
公开(公告)日：2008-12-30
申请号：US11711893
申请日：2007-02-28
申请人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Michio Miura , Satoru Matsuda , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H03H9/25 , H03H9/64
CPC分类号： H03H9/0222 , H03H9/02559 , H03H9/14541 , H03H9/6483
摘要： An elastic boundary wave device includes a LiNbO3 substrate, an electrode exciting an elastic wave and provided on the substrate, and a silicon oxide film provided on the substrate to cover the electrode, and parameters of the elastic boundary wave device have any one of ranges, where “θ” is a rotation Y cut angle of the substrate, “a” is a ratio of copper density with respect to a density of a material used as the electrode, “λ” is a wavelength of the elastic wave excited by the electrode, “h” is a film thickness of the electrode, “H” is a thickness of the silicon oxide film.
摘要翻译：弹性边界波装置包括LiNbO 3基板，激发弹性波并设置在基板上的电极和设置在基板上以覆盖电极的氧化硅膜，弹性边界波装置的参数具有范围，其中“θ”是基板的旋转Y切割角，“a”是铜密度相对于用作电极的材料的密度的比率，“λ”是由电极激发的弹性波的波长，“h”是电极的膜厚，“H”是氧化硅膜的厚度。

6. 发明授权

US08258891B2 Acoustic wave device, duplexer, communication module, communication apparatus, and manufacturing method for acoustic wave device 有权
标题翻译：声波装置，双工器，通信模块，通信装置和声波装置的制造方法
公开(公告)号：US08258891B2
公开(公告)日：2012-09-04
申请号：US12608397
申请日：2009-10-29
申请人： Michio Miura , Suguru Warashina , Takashi Matsuda , Shogo Inoue , Kazunori Inoue , Satoru Matsuda
发明人： Michio Miura , Suguru Warashina , Takashi Matsuda , Shogo Inoue , Kazunori Inoue , Satoru Matsuda
IPC分类号： H03H9/25 , H03H9/15 , H03H9/70 , H03H9/72 , H03H3/02 , H03H3/08 , H03H3/04 , H03H3/10
CPC分类号： H03H3/10 , H03H9/0222 , H03H9/25 , Y10T29/42 , Y10T29/49005
摘要： An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.
摘要翻译：声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件在第一电介质元件上。调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。

7. 发明授权

US07830067B2 Elastic boundary wave device 失效
标题翻译：弹性边界波装置
公开(公告)号：US07830067B2
公开(公告)日：2010-11-09
申请号：US12431427
申请日：2009-04-28
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda , Masanori Ueda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda , Masanori Ueda
IPC分类号： H01L41/04
CPC分类号： H03H9/0222 , H03H9/02818
摘要： An elastic boundary wave device includes a first medium with piezoelectricity, an electrode exciting an elastic wave and provided on the first medium, a second medium made of a different material from the first medium and provided on the first medium to cover the electrode, and a sound absorbing portion provided on the second medium.
摘要翻译：弹性边界波装置包括具有压电性的第一介质，激发弹性波并设置在第一介质上的电极，由与第一介质不同的材料制成并设置在第一介质上以覆盖电极的第二介质，以及设在第二介质上的吸音部。

8. 发明申请

US20080074212A1 Acoustic wave device, resonator and filter 有权
标题翻译：声波装置，谐振器和滤波器
公开(公告)号：US20080074212A1
公开(公告)日：2008-03-27
申请号：US11902800
申请日：2007-09-25
申请人： Satoru Matsuda , Michio Miura , Shogo Inoue , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
发明人： Satoru Matsuda , Michio Miura , Shogo Inoue , Takashi Matsuda , Masanori Ueda , Seiichi Mitobe
IPC分类号： H03H9/64 , H03H9/25
CPC分类号： H03H9/02559 , H03H9/0222 , H03H9/02574 , H03H9/6459 , H03H9/6469 , H03H9/6483
摘要： A filter includes a parallel resonator having first comb electrodes provided on a piezoelectric substrate and a first dielectric film that covers the first comb electrodes, and a series resonator having second comb electrodes provided on the piezoelectric substrate and a second dielectric film covers the second comb electrodes and is made of a material identical to that of the first dielectric film. The first dielectric film has a different thickness from that of the second dielectric film.
摘要翻译：滤波器包括并联谐振器，其具有设置在压电基板上的第一梳状电极和覆盖第一梳状电极的第一电介质膜，以及设置在压电基板上的具有第二梳状电极的串联谐振器，第二电介质膜覆盖第二梳状电极并且由与第一电介质膜相同的材料制成。第一电介质膜的厚度与第二电介质膜的厚度不同。

9. 发明授权

US09160300B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US09160300B2
公开(公告)日：2015-10-13
申请号：US13610384
申请日：2012-09-11
申请人： Satoru Matsuda , Takashi Matsuda , Michio Miura
发明人： Satoru Matsuda , Takashi Matsuda , Michio Miura
IPC分类号： H03H9/64 , H03H9/02
CPC分类号： H03H9/02834 , H03H9/0222 , H03H9/02559 , H03H9/02842 , H03H9/64
摘要： An acoustic wave device includes: an electrode that is located on a substrate and excites an acoustic wave; and an oxide silicon film that is doped with an element and provided so as to cover the electrode, wherein a normalized reflectance obtained by normalizing a local maximum value of a reflectance when a light is caused to enter an upper surface of the oxide silicon film doped with the element by a reflectance when a light having a wavelength at the local maximum value is caused to enter an upper surface of the substrate directly is equal to or larger than 0.96.
摘要翻译：声波装置包括：位于基板上并激发声波的电极; 以及氧化物硅膜，其被掺杂有元素并且被设置为覆盖电极，其中通过归一化使当光进入氧化硅膜的上表面的反射率的局部最大值被掺杂的归一化反射率当使具有局部最大值的波长的光直接进入衬底的上表面时，元件具有反射率等于或大于0.96。

10. 发明授权

US09083303B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US09083303B2
公开(公告)日：2015-07-14
申请号：US13593356
申请日：2012-08-23
申请人： Satoru Matsuda , Michio Miura , Takashi Matsuda
发明人： Satoru Matsuda , Michio Miura , Takashi Matsuda
IPC分类号： H01L41/04 , H03H9/02 , H03H9/64
CPC分类号： H03H9/02866 , H03H9/6483
摘要： An acoustic wave device includes a substrate, a dielectric film formed on the substrate and a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film. At least one of the substrate and the dielectric film is piezoelectric. The IDT electrodes each include an electrode finger that extends in at least one direction. A film thickness of the dielectric film changes in a gap portion between a tip of the electrode finger of one of the IDT electrodes and the other opposing IDT electrode in the direction of extension of the electrode finger.
摘要翻译：声波装置包括基板，形成在基板上的电介质膜和设置在基板和电介质膜之间的彼此相对的一对IDT电极。基板和电介质膜中的至少一个是压电的。 IDT电极各自包括沿至少一个方向延伸的电极指。电介质膜的膜厚在IDT电极之一的电极指的末端与电极指的延伸方向上的另一个相对的IDT电极之间的间隙部分发生变化。

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