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1. 发明授权

US07221013B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07221013B2
公开(公告)日：2007-05-22
申请号：US10916645
申请日：2004-08-12
申请人： Satoru Goto , Yoshihisa Nagano
发明人： Satoru Goto , Yoshihisa Nagano
IPC分类号： H01L27/108 , H01L29/76 , H01L31/119 , H01L21/00
CPC分类号： H01L28/55 , H01L27/10852 , H01L28/65 , H01L28/82
摘要： A semiconductor device includes: an insulating underlying layer of which surface portion has a concave portion; a lower electrode formed on the underlying layer along the inner face of the concave portion; a capacitor insulating film formed on the lower electrode and made of a high-dielectric or a ferroelectric subjected to thermal treatment for crystallization; and an upper electrode formed on the capacitor insulating film. The lower electrode and the upper electrode are made of a material that generates tensile stress in the thermal treatment for the capacitor insulating film, and the upper end part of the side wall and the corner part at the bottom face of the concave portion of the underlying layer are rounded.
摘要翻译：半导体器件包括：表面部分具有凹部的绝缘下层; 沿着所述凹部的内表面形成在所述下层上的下电极; 在下电极上形成的电容器绝缘膜，由用于结晶的热处理的高电介质或铁电体构成; 以及形成在电容器绝缘膜上的上电极。下电极和上电极由在电容绝缘膜的热处理中产生拉伸应力的材料制成，并且侧壁的上端部和位于底部的凹部的底部的底面的角部层是圆形的。

2. 发明申请

US20050051829A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050051829A1
公开(公告)日：2005-03-10
申请号：US10916645
申请日：2004-08-12
申请人： Satoru Goto , Yoshihisa Nagano
发明人： Satoru Goto , Yoshihisa Nagano
IPC分类号： H01L27/108 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/105
CPC分类号： H01L28/55 , H01L27/10852 , H01L28/65 , H01L28/82
摘要： A semiconductor device includes: an insulating underlying layer of which surface portion has a concave portion; a lower electrode formed on the underlying layer along the inner face of the concave portion; a capacitor insulating film formed on the lower electrode and made of a high-dielectric or a ferroelectric subjected to thermal treatment for crystallization; and an upper electrode formed on the capacitor insulating film. The lower electrode and the upper electrode are made of a material that generates tensile stress in the thermal treatment for the capacitor insulating film, and the upper end part of the side wall and the corner part at the bottom face of the concave portion of the underlying layer are rounded.
摘要翻译：半导体器件包括：表面部分具有凹部的绝缘下层; 沿着所述凹部的内表面形成在所述下层上的下电极; 在下电极上形成的电容器绝缘膜，由用于结晶的热处理的高电介质或铁电体构成; 以及形成在电容器绝缘膜上的上电极。下电极和上电极由在电容绝缘膜的热处理中产生拉伸应力的材料制成，并且侧壁的上端部和位于底部的凹部的底部的底面的角部层是圆形的。

3. 发明授权

US07531863B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US07531863B2
公开(公告)日：2009-05-12
申请号：US11270615
申请日：2005-11-10
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

4. 发明申请

US20050167725A1 Capacitor element and method for fabricating the same 有权
标题翻译：电容元件及其制造方法
公开(公告)号：US20050167725A1
公开(公告)日：2005-08-04
申请号：US11035175
申请日：2005-01-14
申请人： Yoshihisa Nagano , Takumi Mikawa
发明人： Yoshihisa Nagano , Takumi Mikawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8239 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/00
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/57 , H01L28/75
摘要： A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
摘要翻译：提供一种电容器元件，其由下电极，与下电极相对形成的上电极和由电介质材料或高电介质材料制成并形成在下电极和上电极之间的电容器电介质膜组成。下电极，电容器电介质膜和上电极形成在至少从设置在其上表面上的第一氢阻挡膜朝向孔上方的位置的层间绝缘膜的孔内延伸的区域中。与第一氢阻挡膜接触的第二氢阻挡膜设置成覆盖上电极的上表面和形成在孔上方的上电极部分的侧表面。

5. 发明授权

US06809000B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

6. 发明授权

US06441420B1 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US06441420B1
公开(公告)日：2002-08-27
申请号：US09576971
申请日：2000-05-24
申请人： Yoshihisa Nagano , Yasuhiro Uemoto
发明人： Yoshihisa Nagano , Yasuhiro Uemoto
IPC分类号： H01L2994
CPC分类号： H01L27/10894 , H01L27/10852 , H01L27/11507 , H01L27/11509 , H01L28/55
摘要： A protective insulating film is deposited over first and second field-effect transistors formed on a semiconductor substrate. A capacitor composed of a capacitor lower electrode, a capacitor insulating film composed of an insulating metal oxide film, and a capacitor upper electrode is formed on the protective insulating film. A first contact plug formed in the protective insulating film provides a direct connection between the capacitor lower electrode and an impurity diffusion layer of the first field-effect transistor. A second contact plug formed in the protective insulating film provides a direct connection between the capacitor upper electrode and an impurity diffusion layer of the second field-effect transistor.

7. 发明授权

US06239462B1 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same 失效
标题翻译：具有改进的抗扩散性能的半导体电容器件及其制造方法
公开(公告)号：US06239462B1
公开(公告)日：2001-05-29
申请号：US09120893
申请日：1998-07-23
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

8. 发明授权

US06169304A Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer 失效
标题翻译：具有钝化层的半导体器件使氢扩散到电介质层中最小化
公开(公告)号：US06169304A
公开(公告)日：2001-01-02
申请号：US09071534
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

9. 发明授权

US5840200A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5840200A
公开(公告)日：1998-11-24
申请号：US788310
申请日：1997-01-24
申请人： Satoshi Nakagawa , Toyoji Ito , Yoji Bito , Yoshihisa Nagano
发明人： Satoshi Nakagawa , Toyoji Ito , Yoji Bito , Yoshihisa Nagano
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/302
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/32136
摘要： A device insulating film, a lower-layer platinum film, a ferroelectric film, an upper-layer platinum film, and a titanium film are sequentially formed on a semiconductor substrate in this order. On the titanium film, a photoresist mask is further formed in a desired pattern. The thickness of the titanium film is adjusted to be 1/10 or more of the total thickness of a multilayer film consisting of the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film. The titanium film is then subjected to dry etching and the photoresist film is removed by ashing process. The titanium film thus patterned is used as a mask in etching the upper-layer platinum film, the ferroelectric film, and the lower-layer platinum film by a dry-etching method using a plasma of a gas mixture of chlorine and oxygen in which the volume concentration of oxygen gas is adjusted to be 40%. During the dry-etching process, the titanium film is oxidized to provide a high etching selectivity. Subsequently, the titanium film is removed by dry etching using a plasma of chlorine gas.
摘要翻译：依次在半导体衬底上依次形成器件绝缘膜，下层铂膜，铁电体膜，上层铂膜和钛膜。在钛膜上，以期望的图案进一步形成光致抗蚀剂掩模。将钛膜的厚度调节为由上层铂膜，铁电体膜和下层铂膜构成的多层膜的总厚度的+ E，fra 1/10 + EE以上。然后对钛膜进行干蚀刻，并通过灰化处理去除光致抗蚀剂膜。通过使用氯气和氧气的混合气体的等离子体的干蚀刻方法，将如此构图的钛膜用作蚀刻上层铂膜，铁电体膜和下层铂膜的掩模，其中氧气体积浓度调整为40％。在干蚀刻工艺期间，钛膜被氧化以提供高蚀刻选择性。随后，使用氯气等离子体通过干蚀刻除去钛膜。

10. 发明授权

US5780351A Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US5780351A
公开(公告)日：1998-07-14
申请号：US844108
申请日：1997-04-28
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

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