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1. 发明申请

US20050045990A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050045990A1
公开(公告)日：2005-03-03
申请号：US10950532
申请日：2004-09-28
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/00
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

2. 发明授权

US06809000B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

3. 发明授权

US06239462B1 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same 失效
标题翻译：具有改进的抗扩散性能的半导体电容器件及其制造方法
公开(公告)号：US06239462B1
公开(公告)日：2001-05-29
申请号：US09120893
申请日：1998-07-23
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

4. 发明授权

US06326671B1 Semiconductor memory device and method for manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06326671B1
公开(公告)日：2001-12-04
申请号：US09452620
申请日：1999-12-01
申请人： Yoshihisa Nagano , Keisuke Tanaka , Toru Nasu
发明人： Yoshihisa Nagano , Keisuke Tanaka , Toru Nasu
IPC分类号： H01L3107
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507 , H01L28/40
摘要： A semiconductor memory device, includes: a semiconductor substrate including a transistor; a first protective insulating film for covering the semiconductor substrate; at least one data storage capacitor element formed on the first protective insulating film; a second protective insulating film for covering the first protective insulating film and the capacitor element; a hydrogen carrier layer; and an interconnection layer for electrically connecting the transistor and the capacitor element, wherein: the capacitor element includes a lower electrode formed on the first protective insulating film, a capacitor film formed on the lower electrode, and an upper electrode formed on the capacitor film, the capacitor film includes an insulating metal oxide, the second protective insulating film has a first contact hole reaching the upper electrode and a second contact hole reaching the lower electrode, and the hydrogen barrier layer is provided in the first and second contact holes, so as not to expose the upper and the lower electrodes.
摘要翻译：一种半导体存储器件，包括：包括晶体管的半导体衬底; 用于覆盖半导体衬底的第一保护绝缘膜; 形成在所述第一保护绝缘膜上的至少一个数据存储电容器元件; 用于覆盖第一保护绝缘膜和电容器元件的第二保护绝缘膜; 氢载体层; 以及用于电连接所述晶体管和所述电容器元件的互连层，其中：所述电容器元件包括形成在所述第一保护绝缘膜上的下电极，形成在所述下电极上的电容器膜，以及形成在所述电容器膜上的上电极，电容器膜包括绝缘金属氧化物，第二保护绝缘膜具有到达上电极的第一接触孔和到达下电极的第二接触孔，并且氢阻挡层设置在第一和第二接触孔中，因此不暴露上下电极。

5. 发明授权

US06528365B2 Semiconductor memory device and method for manufacturing the same 失效
公开(公告)号：US06528365B2
公开(公告)日：2003-03-04
申请号：US09974510
申请日：2001-10-10
申请人： Yoshihisa Nagano , Keisuke Tanaka , Toru Nasu
发明人： Yoshihisa Nagano , Keisuke Tanaka , Toru Nasu
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507 , H01L28/40
摘要： A semiconductor memory device, includes: a semiconductor substrate including a transistor; a first protective insulating film for covering the semiconductor substrate; at least one data storage capacitor element formed on the first protective insulating film; a second protective insulating film for covering the first protective insulating film and the capacitor element; a hydrogen barrier layer; and an interconnection layer for electrically connecting the transistor and the capacitor element, wherein: the capacitor element includes a lower electrode formed on the first protective insulating film, a capacitor film formed on the lower electrode, and an upper electrode formed on the capacitor film, the capacitor film includes an insulating metal oxide, the second protective insulating film has a first contact hole reaching the upper electrode and a second contact hole reaching the lower electrode, and the hydrogen barrier layer is provided in the first and second contact holes, so as not to expose the upper and the lower electrodes.

6. 发明授权

US06734456B2 Ferroelectric film and semiconductor device 失效
标题翻译：铁电薄膜和半导体器件
公开(公告)号：US06734456B2
公开(公告)日：2004-05-11
申请号：US10287824
申请日：2002-11-05
申请人： Keisuke Tanaka , Toru Nasu , Masamichi Azuma
发明人： Keisuke Tanaka , Toru Nasu , Masamichi Azuma
IPC分类号： H01L2976
CPC分类号： H01L21/02197 , H01L21/31691 , H01L28/55 , H01L28/75
摘要： The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0
摘要翻译：本发明的铁电体膜由通式Bi4-x + yAxTi3O12或（Bi4-x + yAxTi3O12）z +（DBi2E2O9）1-z表示的铁电材料制成，其中A为选自 La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和V; D是选自Sr，Ba，Ca，Bi，Cd，Pb和La的元素; E是选自Ti，Ta，Hf，W，Nb，Zr和Cr的元素; 0 <= x <= 2,0

7. 发明授权

US08479079B2 Integrated data and header protection for tape drives 有权
标题翻译：磁带驱动器的集成数据和接头保护
公开(公告)号：US08479079B2
公开(公告)日：2013-07-02
申请号：US12757882
申请日：2010-04-09
申请人： Roy Daron Cideciyan , Hisato Matsuo , Thomas Mittelholzer , Kenji Ohtani , Paul J Seger , Keisuke Tanaka
发明人： Roy Daron Cideciyan , Hisato Matsuo , Thomas Mittelholzer , Kenji Ohtani , Paul J Seger , Keisuke Tanaka
IPC分类号： G06F11/00
CPC分类号： G11B20/18 , G11B2020/184 , G11B2020/1853 , G11B2220/90
摘要： A method for integrating data and header protection in tape drives includes receiving an array of data organized into rows and columns. The array is extended to include one or more headers for each row of data in the array. The method provides two dimensions of error correction code (ECC) protection for the data in the array and a single dimension of ECC protection for the headers in the array. A corresponding apparatus is also disclosed herein.
摘要翻译：在磁带驱动器中集成数据和头部保护的方法包括接收一组数据组织成行和列。该数组被扩展以包括数组中每行数据的一个或多个头。该方法为阵列中的数据提供了二维纠错码（ECC）保护，并为阵列中的标头提供了ECC保护的一个维度。本文还公开了相应的装置。

8. 发明授权

US08412891B2 Arbitrated access to memory shared by a processor and a data flow 有权
标题翻译：仲裁访问由处理器和数据流共享的内存
公开(公告)号：US08412891B2
公开(公告)日：2013-04-02
申请号：US12916668
申请日：2010-11-01
申请人： Masayuki Demura , Hisato Matsuo , Keisuke Tanaka
发明人： Masayuki Demura , Hisato Matsuo , Keisuke Tanaka
IPC分类号： G06F12/12 , G06F13/18 , G06F13/34
CPC分类号： G06F13/161 , G06F13/1673 , Y02D10/14
摘要： Memory access arbitration allowing a shared memory to be used both as a memory for a processor and as a buffer for data flows, including an arbiter unit that makes assignment for access requests to the memory sequentially and transfers blocks of data in one round-robin cycle according to bandwidths required for the data transfers, sets priorities for the transfer blocks so that the bandwidths required for the data transfers are met by alternate transfer of the transfer blocks, and executes an access from the processor with an upper limit set for the number of access times from the processor to the memory in one round-robin cycle so that the access from the processor with the highest priority and with a predetermined transfer length exerts less effect on bandwidths for data flow transfers in predetermined intervals between the transfer blocks.
摘要翻译：存储器访问仲裁允许共享存储器既用作处理器的存储器又用作数据流的缓冲器，包括仲裁器单元，其顺序地对存储器的访问请求进行分配，并在一个循环周期中传送数据块根据数据传输所需的带宽，设置传输块的优先级，使得通过传输块的交替传送来满足数据传输所需的带宽，并且执行对处理器的访问，其具有为在一个循环周期中从处理器到存储器的访问时间，使得来自具有最高优先级并且具有预定传送长度的处理器的访问对传输块之间的预定间隔中的数据流传输的带宽的影响较小。

9. 发明授权

US08276045B2 ECC interleaving for multi-track recording on magnetic tape 有权
标题翻译：用于磁带上多轨记录的ECC交错
公开(公告)号：US08276045B2
公开(公告)日：2012-09-25
申请号：US12351738
申请日：2009-01-09
申请人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Hisato Matsuo , Thomas Mittelholzer , Paul J. Seger , Keisuke Tanaka
发明人： Roy D. Cideciyan , Evangelos S. Eleftheriou , Hisato Matsuo , Thomas Mittelholzer , Paul J. Seger , Keisuke Tanaka
IPC分类号： G11C29/00
CPC分类号： H03M13/2909 , G11B20/1202 , G11B20/1833 , G11B20/1866 , G11B2020/1836 , G11B2020/1853 , G11B2220/93 , H03M13/15 , H03M13/1515
摘要： Conventional C2 coding and interleaving for multi-track data tape in LTO-3/4 do not support recording data onto a number of concurrent tracks which is not a power of two. Higher-rate longer C2 codes, which do not degrade error rate performance, are provided. An adjustable format and interleaving scheme accommodates future tape drives in which the number of concurrent tracks is not necessarily a power of two. A data set is segmented into a plurality of unencoded subdata sets and parity bytes are generated for each row and column. The parameters of the C2 code include N2 as the least common multiple of the number of possible tracks to which codeword objects are to be written. COs are formed from N2 C1 codewords, mapped onto a logical data track according to information within headers of the CO and modulation encoded into synchronized COs which are written to the tape.
摘要翻译： LTO-3/4中的多轨数据磁带的常规C2编码和交织不支持将数据记录到不是2的幂的多个并发磁道上。提供了更高速率的更长的C2代码，这不会降低错误率性能。可调格式和交错方案适应将来的磁带驱动器，其中并发轨道的数量不一定是二的幂。将数据集分割为多个未编码的子数据集，并为每行和列生成奇偶校验字节。 C2码的参数包括N2作为要写入码字对象的可能轨道数的最小公倍数。 CO由N 2 C1码字形成，根据被写入到磁带的编码到同步的CO中的CO和报头中的信息映射到逻辑数据轨道。

10. 发明申请

US20110252290A1 INTEGRATED DATA AND HEADER PROTECTION FOR TAPE DRIVES 有权
标题翻译：集成数据和磁带保护用于磁带驱动
公开(公告)号：US20110252290A1
公开(公告)日：2011-10-13
申请号：US12757882
申请日：2010-04-09
申请人： Roy D. Cideciyan , Hisato Matsuo , Thomas Mittelholzer , Kenji Ohtani , Paul J. Seger , Keisuke Tanaka
发明人： Roy D. Cideciyan , Hisato Matsuo , Thomas Mittelholzer , Kenji Ohtani , Paul J. Seger , Keisuke Tanaka
IPC分类号： G11C11/00 , G06F11/16
CPC分类号： G11B20/18 , G11B2020/184 , G11B2020/1853 , G11B2220/90
摘要： A method for integrating data and header protection in tape drives includes receiving an array of data organized into rows and columns. The array is extended to include one or more headers for each row of data in the array. The method provides two dimensions of error correction code (ECC) protection for the data in the array and a single dimension of ECC protection for the headers in the array. A corresponding apparatus is also disclosed herein.
摘要翻译：在磁带驱动器中集成数据和头部保护的方法包括接收一组数据组织成行和列。该数组被扩展以包括数组中每行数据的一个或多个头。该方法为阵列中的数据提供了二维纠错码（ECC）保护，并为阵列中的标头提供了ECC保护的一个维度。本文还公开了相应的装置。

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