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1. 发明授权

US4619768A Method of removing crude oil sludge 失效
标题翻译：去除原油污泥的方法
公开(公告)号：US4619768A
公开(公告)日：1986-10-28
申请号：US622463
申请日：1984-06-20
申请人： Sankichi Takahashi , Harumi Matsuzaki , Toshimi Mukushi , Katsuya Ebara , Tsunehiko Takakusagi , Masahiro Yoshida , Joshiro Sato , Yasumasa Yamane , Katsumi Sakaguchi , Akira Watanabe
发明人： Sankichi Takahashi , Harumi Matsuzaki , Toshimi Mukushi , Katsuya Ebara , Tsunehiko Takakusagi , Masahiro Yoshida , Joshiro Sato , Yasumasa Yamane , Katsumi Sakaguchi , Akira Watanabe
IPC分类号： B01D35/02 , B01D37/00 , B01D37/02 , B65D90/00 , C10G31/09 , B01D17/12 , B01D21/02 , B01D21/26
CPC分类号： C10G31/09 , B01D37/00
摘要： The disclosure is related to a method for removing crude oil sludge, which is convenient for removing sludge while the crude oil is transported. The method for removing crude oil sludge from crude oil includes the steps of:(a) classifying grains of sludge into coarse grains and small grains;(b) settling the sludge in the crude oil discharged from the classification step to separate the coarse grains from the crude oil;(c) sending the crude oil which is the supernatant constituent in the settling step to a filter in order to separate the remaining sludge in the crude oil; and(d) introducing a part of the above crude oil to a reverse washing liquid inlet of the filter, in order to wash reversely the filter medium of the above filter.
摘要翻译：本公开涉及一种去除原油污泥的方法，其在运输原油时便于去除污泥。从原油中除去原油污泥的方法包括以下步骤：（a）将污泥颗粒分级为粗粮和小颗粒; （b）将从分级步骤排出的原油中的污泥沉淀，以分离粗油与原油; （c）在沉淀步骤中将作为上清液组分的原油发送到过滤器中，以分离原油中的剩余污泥; 和（d）将一部分上述原油引入过滤器的反向洗涤液入口，以便相反地洗涤上述过滤器的过滤介质。

2. 发明授权

US08766329B2 Semiconductor device and a method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08766329B2
公开(公告)日：2014-07-01
申请号：US13523262
申请日：2012-06-14
申请人： Yuta Endo , Yuki Imoto , Yuko Takabayashi , Yasumasa Yamane
发明人： Yuta Endo , Yuki Imoto , Yuko Takabayashi , Yasumasa Yamane
IPC分类号： H01L27/085
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/4908 , H01L29/66969 , H01L29/78603
摘要： A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and a lattice constant of the semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15. For example, an oxide semiconductor film is deposited over an underlayer film which contains stabilized zirconia which has a cubic crystal structure and has the (111) plane orientation, whereby the oxide semiconductor film including a crystal region having a high degree of crystallization can be provided directly on the underlayer film.
摘要翻译：提供了其中与氧化物半导体膜接触的氧化物半导体膜和下层膜之间的界面处的电子态是有利的晶体管。通过将界面内的下层膜的最近邻原子间距离与半导体膜的晶格常数之间的差除以界面内的下层膜的最近相邻原子间距离而得到的值小于或等于0.15。例如，氧化物半导体膜沉积在含有稳定的具有立方晶体结构并具有（111）面取向的氧化锆的下层膜上，由此可以提供包括具有高结晶度的晶体区域的氧化物半导体膜直接在下层膜上。

3. 发明授权

US08946790B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08946790B2
公开(公告)日：2015-02-03
申请号：US13488791
申请日：2012-06-05
申请人： Tomokazu Yokoi , Yasumasa Yamane
发明人： Tomokazu Yokoi , Yasumasa Yamane
IPC分类号： H01L21/20 , H01L29/786 , H01L27/12 , H01L29/66 , H01L21/02
CPC分类号： H01L29/78609 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L21/20 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78693
摘要： A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.
摘要翻译：包括氧化物半导体并且能够进行高速操作的晶体管以及晶体管的制造方法。此外，包括晶体管的高可靠性半导体器件和制造半导体器件的方法。半导体器件包括具有沟道形成区域的氧化物半导体层以及被设置为使得沟道形成区域介于其间并具有比沟道形成区域更低的电阻的源极和漏极区域。沟道形成区域和源极区域和漏极区域各自包括结晶区域。

4. 外观设计

USD547602S1 Steaming plate for rice cooker 有权
标题翻译：电饭锅蒸盘
公开(公告)号：USD547602S1
公开(公告)日：2007-07-31
申请号：US29253331
申请日：2006-02-06
申请人： Isamu Yamasaki , Yasumasa Yamane , Yoshio Ueki
设计人： Isamu Yamasaki , Yasumasa Yamane , Yoshio Ueki

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