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1. 发明申请

US20220284946A1 DRAM DEVICE AND ODT RESISTOR VALUE ADJUSTMENT METHOD AND COMPUTER PROGRAM FOR THE SAME 有权
公开(公告)号：US20220284946A1
公开(公告)日：2022-09-08
申请号：US17678500
申请日：2022-02-23
申请人： Sang-Seok Kang , Young-Hee Jung , Sun-Young LEE
发明人： Sang-Seok Kang , Young-Hee Jung , Sun-Young LEE
IPC分类号： G11C11/4093 , G11C5/04 , G11C11/408 , G11C11/4096
摘要： Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.

2. 发明授权

US11837278B2 DRAM device and ODT resistor value adjustment method and computer program for the same 有权
公开(公告)号：US11837278B2
公开(公告)日：2023-12-05
申请号：US17678500
申请日：2022-02-23
申请人： Sang-Seok Kang , Young-Hee Jung , Sun-Young Lee
发明人： Sang-Seok Kang , Young-Hee Jung , Sun-Young Lee
IPC分类号： G11C7/10 , G11C11/4093 , G11C5/04 , G11C11/4096 , G11C11/408 , G11C11/4076
CPC分类号： G11C11/4093 , G11C5/04 , G11C11/4082 , G11C11/4096 , G11C11/4076
摘要： Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.

3. 发明公开

US20240029784A1 DRAM DEVICE AND ODT RESISTOR VALUE ADJUSTMENT METHOD AND COMPUTER PROGRAM FOR THE SAME 审中-公开
公开(公告)号：US20240029784A1
公开(公告)日：2024-01-25
申请号：US18476475
申请日：2023-09-28
申请人： Sang-Seok Kang , Young-Hee Jung , Sun-Young LEE
发明人： Sang-Seok Kang , Young-Hee Jung , Sun-Young LEE
IPC分类号： G11C11/4093 , G11C5/04 , G11C11/4096 , G11C11/408
CPC分类号： G11C11/4093 , G11C5/04 , G11C11/4096 , G11C11/4082 , G11C11/4076
摘要： Disclosed are a dynamic random access memory (DRAM) device, an on-die termination (ODT) resistance value setting method thereof, and a computer program therefor, and the DRAM device includes at least one DRAM module and a memory controller configured to measure a resistance value of an ODT resistor corresponding to one of a rank included in the DRAM module, a chipset included in the rank, and a DQ included in the chipset and set a resistance value of an ODT resistor corresponding to one of the rank, the chipset, and the DQ on the basis of the measured resistance value.

4. 发明授权

US06906545B1 Voltage measurement device tolerant of undershooting or overshooting input voltage of pad 有权
标题翻译：电压测量装置容许欠压或过冲垫的输入电压
公开(公告)号：US06906545B1
公开(公告)日：2005-06-14
申请号：US10359527
申请日：2003-02-05
申请人： Young-Hee Jung , Sang-Seok Kang
发明人： Young-Hee Jung , Sang-Seok Kang
IPC分类号： G11C5/14 , G01R31/26 , H03K17/16 , H03K17/687
CPC分类号： H03K17/162 , H03K17/6872
摘要： There is provided a voltage measurement device that is stable with respect to an undershot or overshot input voltage of a pad. The voltage measurement device includes a voltage line, a pad, a signal generating unit, a first switch, and a second switch. The first switch is connected between the pad and the second switch and the second switch is connected to the voltage line. The signal generating unit receives a control signal and generates an inverted control signal. The voltage line is connected to the pad through the first and second switches that are responsive to the control signal. The pad is also connected to an internal circuit block, so that the internal circuit block is driven according to a pad input. Specifically, the first and second switches can be implemented with an NMOS transistor and a PMOS transistor that are responsive to the control signal and the inverted control signal, respectively. Therefore, even if a logic level input to the pad is an undershot or overshot voltage level, a voltage level of the voltage line is not changed.
摘要翻译：提供了一种电压测量装置，其相对于焊盘的欠压或过冲输入电压是稳定的。电压测量装置包括电压线，焊盘，信号产生单元，第一开关和第二开关。第一开关连接在焊盘和第二开关之间，第二开关连接到电压线。信号发生单元接收控制信号并产生反相控制信号。电压线通过响应于控制信号的第一和第二开关连接到焊盘。焊盘也连接到内部电路块，使得内部电路块根据焊盘输入被驱动。具体地说，第一和第二开关可以用分别响应于控制信号和反相控制信号的NMOS晶体管和PMOS晶体管来实现。因此，即使输入到焊盘的逻辑电平是欠压或过压电压电平，电压线的电压电平也不会改变。

5. 发明授权

US07116127B2 Circuit with fuse and semiconductor device having the same circuit 失效
标题翻译：具有保险丝和半导体器件的电路具有相同的电路
公开(公告)号：US07116127B2
公开(公告)日：2006-10-03
申请号：US10640736
申请日：2003-08-13
申请人： Young-Hee Jung , Sang-Seok Kang
发明人： Young-Hee Jung , Sang-Seok Kang
IPC分类号： H03K17/16
CPC分类号： G11C17/18 , G11C29/781
摘要： A circuit with fuses and a semiconductor device having the same circuit include a first switch connected to a power supply voltage or a signal input terminal and turned on in response to a first pulse signal, a second switch connected to a ground voltage and turned on in response to a second pulse signal, a fuse connected between the first switch and the second switch, and a signal generating circuit for producing the first and second pulse signals. The first pulse signal turns off the first switch before the second pulse signal turns on the second switch and the first pulse signal turns on the first switch after the second pulse signal turns off the second switch.
摘要翻译：具有熔丝和具有相同电路的半导体器件的电路包括连接到电源电压或信号输入端的第一开关并响应于第一脉冲信号而导通，第二开关连接到接地电压并接通响应于第二脉冲信号，连接在第一开关和第二开关之间的保险丝，以及用于产生第一和第二脉冲信号的信号发生电路。第一脉冲信号在第二脉冲信号接通第二开关之前关闭第一开关，并且在第二脉冲信号关闭第二开关之后第一脉冲信号接通第一开关。

6. 发明申请

US20140301096A1 UV-Curable Coating Compositions For A Flow Coating And Flow Coating Methods Using The Same 审中-公开
标题翻译：用于流动涂层的UV可固化涂料组合物和使用其的流动涂布方法
公开(公告)号：US20140301096A1
公开(公告)日：2014-10-09
申请号：US14215553
申请日：2014-03-17
申请人： Jae-Beom AHN , Young-Hoon Choi , Young-Seok Kim , Soon-Gi Kim , Young-Hee Jung
发明人： Jae-Beom AHN , Young-Hoon Choi , Young-Seok Kim , Soon-Gi Kim , Young-Hee Jung
IPC分类号： C09D7/12 , F21S8/10 , C09D7/00
CPC分类号： F21S41/00 , B05D1/30 , B05D3/067 , B05D7/546 , B60Q1/0005 , C08F222/1006 , C08F2220/365 , C09D4/00 , F21S41/28
摘要： An UV-curable coating composition for a flow coating comprises about 20 to about 35 parts by weight of an aliphatic urethane acrylate oligomer having an unsaturated group; about 15 to about 25 parts by weight of an acrylate monomer having a trifunctional or tetrafuntional unsaturated group; about 1 to about 4 parts by weight of an additive agent including an UV absorbent and a light stabilizer; about 1 to about 3 parts by weight of a photoinitiator; and about 38 to about 55 parts by weight of an alcohol-based or ether-based solvent.
摘要翻译：用于流动涂层的UV可固化涂料组合物包含约20至约35重量份的具有不饱和基团的脂族氨基甲酸酯丙烯酸酯低聚物; 约15至约25重量份具有三官能或四官能不饱和基团的丙烯酸酯单体; 约1至约4重量份的包含UV吸收剂和光稳定剂的添加剂; 约1至约3重量份的光引发剂; 和约38至约55重量份的醇基或醚基溶剂。

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