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1. 发明申请

US20070158306A1 METHOD OF FORMING A METAL LINE AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE HAVING THE SAME 有权
标题翻译：形成金属线的方法和制造具有该金属线的显示基板的方法
公开(公告)号：US20070158306A1
公开(公告)日：2007-07-12
申请号：US11564308
申请日：2006-11-29
申请人： Sang-Gab KIM , Shi-Yul KIM , Min-Seok OH , Hong-Kee CHIN
发明人： Sang-Gab KIM , Shi-Yul KIM , Min-Seok OH , Hong-Kee CHIN
IPC分类号： C23F1/00 , H01L21/461 , B44C1/22 , H01L21/302 , C03C15/00
CPC分类号： C23F4/00 , C23F1/02 , C23F1/12 , H01L21/32136
摘要： A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is formed on the second metal layer. The first and second metal layers are dry-etched using etching gas and the photoresist pattern as an etching mask. An etching material is removed from the base substrate, to prevent corrosion of the dry-etched first metal layer. Therefore, the source metal pattern without corrosion may be formed through a dry-etching process so that a manufacturing cost is decreased.
摘要翻译：提供一种形成金属线的方法。在基底基板上形成保护第一金属层的第一金属层和第二金属层。第一金属层包括铝或铝合金。在第二金属层上形成具有直线形状的光致抗蚀剂图案。使用蚀刻气体和光致抗蚀剂图案作为蚀刻掩模对第一和第二金属层进行干蚀刻。从基底基板去除刻蚀材料，以防止干蚀刻的第一金属层的腐蚀。因此，可以通过干蚀刻工艺形成没有腐蚀的源极金属图案，从而降低了制造成本。

2. 发明申请

US20080079002A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：显示基板，其制造方法和具有该基板的显示装置
公开(公告)号：US20080079002A1
公开(公告)日：2008-04-03
申请号：US11864165
申请日：2007-09-28
申请人： Min-Seok OH , Shi-Yul KIM , Sang-Gab KIM , Joo-Han KIM , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
发明人： Min-Seok OH , Shi-Yul KIM , Sang-Gab KIM , Joo-Han KIM , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： G02F1/1362 , G02F1/136213 , G02F2001/136222 , G02F2001/136236
摘要： A display substrate includes a gate line, a storage capacitor, a source line, a switching element, a pixel electrode, and a color filter. The gate line is formed on a base substrate. The storage capacitor has a storage line substantially parallel to the gate line. The source line crosses the gate line to define a pixel area. The switching element is connected to the gate line and the source line. The pixel electrode contacts the switching element. The color filter pattern is formed between the base substrate and the pixel electrode such that the color filter pattern contracts the base substrate and the pixel electrode. Thus, the color filter pattern is formed on the display substrate using a three-mask process.
摘要翻译：显示基板包括栅极线，存储电容器，源极线，开关元件，像素电极和滤色器。栅极线形成在基底基板上。存储电容器具有基本上平行于栅极线的存储线。源极线穿过栅极线以定义像素区域。开关元件连接到栅极线和源极线。像素电极与开关元件接触。滤色器图案形成在基底基板和像素电极之间，使得滤色器图案使基底基板和像素电极收缩。因此，使用三掩模处理在显示基板上形成滤色器图案。

3. 发明申请

US20090108265A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和显示装置
公开(公告)号：US20090108265A1
公开(公告)日：2009-04-30
申请号：US12243592
申请日：2008-10-01
申请人： Shin-IL CHOI , Sang-Gab KIM , Hong-Kee CHIN , Min-Seok OH , Yu-Gwang JEONG , Seung-Ha CHOI
发明人： Shin-IL CHOI , Sang-Gab KIM , Hong-Kee CHIN , Min-Seok OH , Yu-Gwang JEONG , Seung-Ha CHOI
IPC分类号： H01L29/10 , H01L21/84 , H01L29/04
CPC分类号： H01L27/124 , H01L29/458 , H01L29/66765
摘要： A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.
摘要翻译：一种薄膜晶体管的制造方法，包括在基板上形成栅电极，在栅电极上形成半导体层，在半导体层上形成源电极，在与源电极间隔开的半导体层上形成漏电极，在源电极和漏电极上形成铜层图案，将源电极和漏电极上的铜层图案暴露于含氟处理气体，以在其上形成氟化铜层图案，并对该半导体层进行构图。

4. 发明申请

US20080280379A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING SYSTEM USING THE SAME 审中-公开
标题翻译：制造薄膜晶体管基板的方法和使用该薄膜晶体管基板的制造系统
公开(公告)号：US20080280379A1
公开(公告)日：2008-11-13
申请号：US11933413
申请日：2007-10-31
申请人： Min-Seok OH , Sang-Gab KIM , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI , Ki-Hyun KIM , In-Ho SONG
发明人： Min-Seok OH , Sang-Gab KIM , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI , Ki-Hyun KIM , In-Ho SONG
IPC分类号： H01L21/66 , H01L21/67
CPC分类号： H01L22/12 , H01L27/1288 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method of manufacturing a thin film transistor substrate and a manufacturing system using the same, wherein the production of corrosive substances is reduced during the process of manufacturing the thin film transistor substrate. The method includes providing an etching unit with an insulation substrate on which a thin metal film has been deposited, and dry-etching the insulation substrate so as to form a predetermined circuit pattern; providing a waiting unit with the insulation substrate waiting to be cleaned; performing a preliminary cleaning operation by a cleaning unit having a plurality of nozzles while the insulation substrate waits and checking the preliminary cleaning operation; and performing a main cleaning operation with regard to the insulation substrate based on the result of the check.
摘要翻译：提供一种制造薄膜晶体管基板的方法和使用该薄膜晶体管基板的制造系统，其中在制造薄膜晶体管基板的过程中，腐蚀性物质的产生减少。该方法包括：提供具有绝缘基板的蚀刻单元，在其上沉积有薄金属膜，并对绝缘基板进行干蚀刻以形成预定的电路图案; 提供等待单元与等待清理的绝缘基板; 在绝缘基板等待并检查预备清洗操作的同时，通过具有多个喷嘴的清洗单元执行初步清洁操作; 并且基于检查结果对绝缘基板进行主清洗操作。

5. 发明申请

US20080087633A1 METHOD FOR FORMING A METAL LINE AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE HAVING THE METAL LINE 审中-公开
标题翻译：用于形成金属线的方法和用于制造具有金属线的显示衬底的方法
公开(公告)号：US20080087633A1
公开(公告)日：2008-04-17
申请号：US11870806
申请日：2007-10-11
申请人： Min-Seok OH , Sang-Gab Kim , Yu-Gwang Jeong , Seung-Ha Choi , Hong-Kee Chin , Shin-II Choi
发明人： Min-Seok OH , Sang-Gab Kim , Yu-Gwang Jeong , Seung-Ha Choi , Hong-Kee Chin , Shin-II Choi
IPC分类号： C23F1/12
CPC分类号： C23F1/12 , G02F2001/13629 , G02F2001/136295 , H01L21/32136 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
摘要： A method for forming a metal line includes sequentially depositing a low-resistivity metal layer having aluminum on a base substrate and an upper layer having molybdenum on the low-resistivity metal layer, forming a photoresist pattern having a linear shape on the upper layer, etching the upper layer via a mixed gas using the photoresist pattern as a mask, the mixed gas including a chlorine based gas mixed with an additional gas having at least one of nitrogen gas, argon gas, helium gas and sulfur hexafluoride gas, and etching the low-resistivity metal layer using the photoresist pattern as the mask thereby removing any stringer that may be caused by a residue of the low-resistivity metal layer.
摘要翻译：一种形成金属线的方法包括在低电阻率金属层上顺次沉积具有铝的低电阻率金属层，在低电阻金属层上形成具有线性形状的光致抗蚀剂图案，蚀刻通过使用光致抗蚀剂图案作为掩模的混合气体的上层，所述混合气体包括与具有氮气，氩气，氦气和六氟化硫气体中的至少一种的附加气体混合的氯基气体，并且蚀刻低使用光致抗蚀剂图案作为掩模，从而去除可能由低电阻率金属层的残留物引起的任何桁条。

6. 发明申请

US20080042133A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20080042133A1
公开(公告)日：2008-02-21
申请号：US11756855
申请日：2007-06-01
申请人： Hong-Kee CHIN , Sang-Gab KIM , Min-Seok OH , Joo-Han KIM
发明人： Hong-Kee CHIN , Sang-Gab KIM , Min-Seok OH , Joo-Han KIM
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/12 , H01L27/1248
摘要： A thin film transistor (TFT) array substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion, and a method of fabricating the TFT array substrate. The TFT array substrate includes a gate interconnection line arranged on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode, and a drain electrode arranged on the semiconductor layer, a first passivation film arranged on the data interconnection line and exposing the drain electrode, a second passivation film arranged on the first passivation film, and a pixel electrode electrically connected with the drain electrode. An outer sidewall of the second passivation film is positioned inside an outer sidewall of the first passivation film.
摘要翻译：提供一种薄膜晶体管（TFT）阵列基板，其中在接触部分中提供导电材料之间的足够大的接触面积，以及制造TFT阵列基板的方法。 TFT阵列基板包括布置在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和布置在半导体层上的漏电极，布置在数据互连线上并暴露漏极的第一钝化膜，布置在第一钝化膜上的第二钝化膜和与漏电极电连接的像素电极。第二钝化膜的外侧壁位于第一钝化膜的外侧壁内。

7. 发明申请

US20070259521A1 DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20070259521A1
公开(公告)日：2007-11-08
申请号：US11682907
申请日：2007-03-07
申请人： Min-Seok OH , Bong-Kyu SHIN , Sang-Gab KIM , Eun-Guk LEE , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
发明人： Min-Seok OH , Bong-Kyu SHIN , Sang-Gab KIM , Eun-Guk LEE , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
IPC分类号： H01L21/44
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层对光致抗蚀剂图案的表面进行非均匀表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

8. 发明申请

US20110097961A1 DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20110097961A1
公开(公告)日：2011-04-28
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
发明人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
IPC分类号： H01J9/20
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

9. 发明申请

US20110062445A1 DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20110062445A1
公开(公告)日：2011-03-17
申请号：US12952744
申请日：2010-11-23
申请人： Min-Seok OH , Bong-Kyu SHIN , Sang-Gab KIM , Eun-Guk LEE , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
发明人： Min-Seok OH , Bong-Kyu SHIN , Sang-Gab KIM , Eun-Guk LEE , Hong-Kee CHIN , Yu-Gwang JEONG , Seung-Ha CHOI
IPC分类号： H01L29/739
CPC分类号： G02F1/136227 , G02F1/13439 , G02F2201/50
摘要： A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern.
摘要翻译：形成显示基板的方法包括在基板上形成阵列层，在阵列层上形成钝化层，在对应于栅极线，源极线和薄膜晶体管的钝化层上形成光致抗蚀剂图案使用光致抗蚀剂图案作为掩模蚀刻钝化层，对光致抗蚀剂图案的表面进行不均匀的表面处理，在其上形成有表面处理的光致抗蚀剂图案的基板上形成透明电极层并形成像素电极。形成像素电极包括通过将带状溶液浸入表面处理的光致抗蚀剂图案中去除光致抗蚀剂图案和透明电极层。

10. 发明申请

US20110024752A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法和显示装置
公开(公告)号：US20110024752A1
公开(公告)日：2011-02-03
申请号：US12900634
申请日：2010-10-08
申请人： Shin-Il CHOI , Sang-Gab KIM , Hong-Kee CHIN , Min-Seok OH , Yu-Gwang JEONG , Seung-Ha CHOI
发明人： Shin-Il CHOI , Sang-Gab KIM , Hong-Kee CHIN , Min-Seok OH , Yu-Gwang JEONG , Seung-Ha CHOI
IPC分类号： H01L29/16 , H01L33/16
CPC分类号： H01L27/124 , H01L29/458 , H01L29/66765
摘要： A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.
摘要翻译：一种薄膜晶体管的制造方法，包括在基板上形成栅电极，在栅电极上形成半导体层，在半导体层上形成源电极，在与源电极间隔开的半导体层上形成漏电极，在源电极和漏电极上形成铜层图案，将源电极和漏电极上的铜层图案暴露于含氟处理气体，以在其上形成氟化铜层图案，并对该半导体层进行构图。

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