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1. 发明申请

US20120231499A1 HIGH-MOLECULAR-WEIGHT RECOMBINANT SILK OR SILK-LIKE PROTEIN AND MICRO- OR NANO-SIZED SPIDER SILK OR SILK-LIKE FIBER PRODUCED THEREFROM 审中-公开
标题翻译：高分子量重量丝素或丝状蛋白质和微米或纳米尺寸的天花丝绸或丝状纤维生产
公开(公告)号：US20120231499A1
公开(公告)日：2012-09-13
申请号：US13124818
申请日：2011-03-11
申请人： Sang Yup Lee , Xiaoxia Xia , Zhi Gang Qian , Jeong Wook Lee , Young Hwan Park
发明人： Sang Yup Lee , Xiaoxia Xia , Zhi Gang Qian , Jeong Wook Lee , Young Hwan Park
IPC分类号： C12P21/02 , D01D5/06 , C07K14/00
CPC分类号： C07K14/43518 , D01D5/0007 , D01D5/06 , D01F4/02
摘要： A high-molecular-weight recombinant silk or silk-like protein having a molecular weight which is substantially similar to that of native silk protein, and a micro- or nano-sized spider silk or silk-like fiber having improved physical properties, produced therefrom. The recombinant silk or silk-like protein according to the invention has high molecular weight, like dragline silk proteins from spiders, while a fiber produced therefrom has excellent physical properties compared to a fiber produced from native silk protein. Thus, the recombinant silk or silk-like protein and the spider silk or silk-like fiber produced therefrom will be highly useful in various industrial applications, including bioengineering applications and medical applications.
摘要翻译：具有与天然丝蛋白基本相似的分子量的高分子量重组丝或丝状蛋白质，以及由其制备的具有改善的物理性质的微米或纳米尺寸的蜘蛛丝或丝状纤维。根据本发明的重组丝或丝状蛋白具有高分子量，如来自蜘蛛的拉丝丝蛋白，而由其制备的纤维与由天然丝蛋白产生的纤维相比具有优异的物理性能。因此，重组丝或丝状蛋白质以及由其生产的蜘蛛丝或丝状纤维在各种工业应用中非常有用，包括生物工程应用和医疗应用。

2. 发明授权

US09060668B2 Controlling method of dishwasher 有权
标题翻译：洗碗机的控制方法
公开(公告)号：US09060668B2
公开(公告)日：2015-06-23
申请号：US12461683
申请日：2009-08-20
申请人： Seong Ho Kim , Yong Jin Choi , Young Hwan Park
发明人： Seong Ho Kim , Yong Jin Choi , Young Hwan Park
IPC分类号： A47L15/46 , B08B9/20 , A47L15/42 , A47L15/00
CPC分类号： A47L15/4287 , A47L15/0005 , A47L15/0007 , A47L15/0015 , A47L15/0049 , A47L15/4234 , A47L2401/12 , A47L2501/06 , A47L2601/04
摘要： Dishwashers and methods of control for operation of dishwashers are disclosed. The dishwasher may include an upper rack in an upper portion of a washing compartment for placing dishes, such as wine glasses, which are susceptible to damage. The dishwasher may also include an upper spraying arm in the upper portion of the washing compartment. During a wash cycle, the upper spraying arm can spray washing water toward the upper rack and steam may be supplied to the washing compartment at various intervals to reduce the risk of damage to the dishes and improve foreign matter removal. During a rinse cycle, water which may be heated in multiple stages by a sump heater may be sprayed toward the upper rack.
摘要翻译：公开了用于洗碗机操作的洗碗机和控制方法。洗碗机可以包括在洗涤室的上部的上部机架，用于放置易于损坏的餐具（例如酒杯）。洗碗机还可以包括位于洗涤室上部的上部喷洒臂。在洗涤循环期间，上部喷洒臂可以向上部支架喷射洗涤水，并且可以以各种间隔将蒸汽供应到洗涤室，以减少损坏餐具的风险并改善异物去除。在漂洗循环期间，可以通过贮槽加热器多级加热的水可以朝向上部支架喷射。

3. 再颁专利

USRE44795E1 Drum type washing machine 有权
标题翻译：鼓式洗衣机
公开(公告)号：USRE44795E1
公开(公告)日：2014-03-11
申请号：US13116096
申请日：2011-05-26
申请人： Na Eun Kim , Jin Woong Kim , Young Hwan Park , Jae Won Chang
发明人： Na Eun Kim , Jin Woong Kim , Young Hwan Park , Jae Won Chang
IPC分类号： D06F37/22
CPC分类号： D06F37/22
摘要： A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.
摘要翻译：提供了一种滚筒式洗衣机，其中振动被有效地衰减，提供了在尺寸固定的机柜内的最大容量，并且用户不会弯曲或坐下来将衣物装载到洗衣机中。滚筒式洗衣机包括形成滚筒式洗衣机外部的机柜，固定在机柜内的桶，在桶的外周具有衣物装载入口的桶，可旋转地设置在桶内的滚筒，滚筒在滚筒的横向侧上具有与桶的衣物装载入口连通的开口，设置在滚筒的一侧旁边以使滚筒旋转的马达组件和设置成支撑滚筒重量的悬挂组件，衰减鼓的振动。

4. 发明授权

US08373245B2 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same 有权
标题翻译： 2DEG肖特基二极管以氮化物形成复合肖特基/欧姆电极结构及其制造方法
公开(公告)号：US08373245B2
公开(公告)日：2013-02-12
申请号：US12654940
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/47
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.
摘要翻译：公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

5. 发明授权

US08373200B2 Nitride based semiconductor device and method for manufacturing of the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08373200B2
公开(公告)日：2013-02-12
申请号：US12842303
申请日：2010-07-23
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
摘要翻译：本文公开了一种氮化物基半导体器件。氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。

6. 发明申请

US20120267686A1 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267686A1
公开(公告)日：2012-10-25
申请号：US13137291
申请日：2011-08-03
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/66431 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.
摘要翻译：提供一种氮化物半导体器件，其包括：氮化物半导体层，其在氮化物半导体内部具有二维电子气体（2DEG）通道的衬底上; 与氮化物半导体层欧姆接触的漏电极; 源极与漏极间隔开，与氮化物半导体层肖特基接触，并且具有与内部的氮化物半导体层欧姆接触的欧姆图案; 形成在所述氮化物半导体层上的所述漏电极和所述源电极之间以及所述源电极的至少一部分上的电介质层; 以及设置在所述电介质层上以与所述漏极间隔开的栅电极，其中所述栅电极的一部分形成在所述源电极的漏极侧边缘部分之间，并且介电层插入其间;以及其制造方法。

7. 发明申请

US20120267639A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120267639A1
公开(公告)日：2012-10-25
申请号：US13448678
申请日：2012-04-17
申请人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park
发明人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park
IPC分类号： H01L29/778 , H01L21/336 , H01L29/205
CPC分类号： H01L29/402 , H01L29/0607 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： Disclosed herein are a nitride semiconductor device and a method for manufacturing the same. According to an exemplary embodiment, there is provided a nitride semiconductor device, including: a nitride semiconductor layer having a 2DEG channel; a drain electrode ohmic-contacted with the nitride semiconductor layer; a source electrode Schottky-contacted with the nitride semiconductor layer, including a plurality of patterned protrusion portions protruded to the drain electrode direction, and including an ohmic pattern ohmic-contacted with the nitride semiconductor layer therein; a dielectric layer disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode including the patterned protrusion portions; and a gate electrode disposed on the dielectric, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode.
摘要翻译：本文公开了一种氮化物半导体器件及其制造方法。根据示例性实施例，提供了一种氮化物半导体器件，包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的漏电极; 与氮化物半导体层肖特基接触的源电极，包括突出到漏电极方向的多个图案化突起部分，并且包括与其中的氮化物半导体层欧姆接触的欧姆图案; 设置在所述氮化物半导体层之间的介电层，位于所述漏电极和所述源电极之间，以及至少部分所述源极包括所述图案化突起部分; 以及设置在所述电介质上的栅电极，其中所述栅电极的一部分设置在所述图案化的突出部分上的所述电介质层和所述源电极的漏极方向边缘部分上。

8. 发明申请

US20110233623A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233623A1
公开(公告)日：2011-09-29
申请号：US12965649
申请日：2010-12-10
申请人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7786 , H01L29/0649 , H01L29/2003 , H01L29/365 , H01L29/4236 , H01L29/66462 , H01L29/78681
摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.
摘要翻译：提供了一种半导体器件及其制造方法。半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

9. 发明申请

US20110233613A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233613A1
公开(公告)日：2011-09-29
申请号：US12965640
申请日：2010-12-10
申请人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.
摘要翻译：提供了一种半导体器件及其制造方法。根据本发明的半导体器件包括：基底; 半导体层，其包括形成在所述基底基板上的接收槽和突出部，第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层形成的至少两个绝缘层，以及间隔开的第二载流子注入层除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极，其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极，其中接收槽的最低端部接触第一载流子注入层的最上层，并且布置的绝缘图案在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层，并且设置在接收槽的厚度方向上的两个侧端部的外侧。

10. 发明申请

US20110057233A1 Semiconductor component and method for manufacturing of the same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110057233A1
公开(公告)日：2011-03-10
申请号：US12591409
申请日：2009-11-18
申请人： Ki Yeol Park , Jung Hee Lee , Ki Won Kim , Young Hwan Park , Woo Chul Jeon
发明人： Ki Yeol Park , Jung Hee Lee , Ki Won Kim , Young Hwan Park , Woo Chul Jeon
IPC分类号： H01L29/778 , H01L29/772 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/1033 , H01L29/2003 , H01L29/66462 , H01L29/7788
摘要： The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.
摘要翻译：本发明提供一种半导体元件。根据本发明的半导体部件包括具有低电阻层和比低电阻层高的电阻率的低电阻层的下层，同时围绕低电阻层的侧表面; 设置在所述高电阻层的前表面上的源电极; 栅极结构，其设置在所述低电阻层的前表面上; 排列结构，设置在所述低电阻层的后表面上; 以及在高电阻层的后表面上包围漏极结构的基底基板。

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