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1. 发明授权

US08373245B2 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same 有权
标题翻译： 2DEG肖特基二极管以氮化物形成复合肖特基/欧姆电极结构及其制造方法
公开(公告)号：US08373245B2
公开(公告)日：2013-02-12
申请号：US12654940
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/47
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.
摘要翻译：公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

2. 发明授权

US08373200B2 Nitride based semiconductor device and method for manufacturing of the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08373200B2
公开(公告)日：2013-02-12
申请号：US12842303
申请日：2010-07-23
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
摘要翻译：本文公开了一种氮化物基半导体器件。氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。

3. 发明申请

US20110233623A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233623A1
公开(公告)日：2011-09-29
申请号：US12965649
申请日：2010-12-10
申请人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L29/7786 , H01L29/0649 , H01L29/2003 , H01L29/365 , H01L29/4236 , H01L29/66462 , H01L29/78681
摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.
摘要翻译：提供了一种半导体器件及其制造方法。半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

4. 发明申请

US20110233613A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233613A1
公开(公告)日：2011-09-29
申请号：US12965640
申请日：2010-12-10
申请人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.
摘要翻译：提供了一种半导体器件及其制造方法。根据本发明的半导体器件包括：基底; 半导体层，其包括形成在所述基底基板上的接收槽和突出部，第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层形成的至少两个绝缘层，以及间隔开的第二载流子注入层除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极，其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极，其中接收槽的最低端部接触第一载流子注入层的最上层，并且布置的绝缘图案在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层，并且设置在接收槽的厚度方向上的两个侧端部的外侧。

5. 发明申请

US20110057233A1 Semiconductor component and method for manufacturing of the same 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110057233A1
公开(公告)日：2011-03-10
申请号：US12591409
申请日：2009-11-18
申请人： Ki Yeol Park , Jung Hee Lee , Ki Won Kim , Young Hwan Park , Woo Chul Jeon
发明人： Ki Yeol Park , Jung Hee Lee , Ki Won Kim , Young Hwan Park , Woo Chul Jeon
IPC分类号： H01L29/778 , H01L29/772 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/1033 , H01L29/2003 , H01L29/66462 , H01L29/7788
摘要： The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.
摘要翻译：本发明提供一种半导体元件。根据本发明的半导体部件包括具有低电阻层和比低电阻层高的电阻率的低电阻层的下层，同时围绕低电阻层的侧表面; 设置在所述高电阻层的前表面上的源电极; 栅极结构，其设置在所述低电阻层的前表面上; 排列结构，设置在所述低电阻层的后表面上; 以及在高电阻层的后表面上包围漏极结构的基底基板。

6. 发明授权

US08637902B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08637902B2
公开(公告)日：2014-01-28
申请号：US12907653
申请日：2010-10-19
申请人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol Park , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/737 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41725 , H01L29/66462
摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
摘要翻译：提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

7. 发明授权

US08319309B2 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08319309B2
公开(公告)日：2012-11-27
申请号：US12654936
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L27/095
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/475 , H01L29/66212 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

8. 发明申请

US20110233612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233612A1
公开(公告)日：2011-09-29
申请号：US12907653
申请日：2010-10-19
申请人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
发明人： Ki Yeol PARK , Woo Chul Jeon , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41725 , H01L29/66462
摘要： There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
摘要翻译：提供了具有允许增强性能的高电子迁移率晶体管（HEMT）结构的半导体器件及其制造方法。半导体器件包括：基底; 设置在所述基底基板上的半导体层; 源电极，栅电极和漏极，设置在所述半导体层上以彼此间隔开; 以及部分地设置在漏电极和半导体层之间的界面处的欧姆接触层。

9. 发明申请

US20110057234A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057234A1
公开(公告)日：2011-03-10
申请号：US12654940
申请日：2010-01-08
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/66007 , H01L21/02521 , H01L29/0692 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： Disclosed is a semiconductor device including: a base substrate; a semiconductor layer disposed on the base substrate; an ohmic electrode part which has ohmic electrode lines disposed in a first direction, on the semiconductor layer; and a Schottky electrode part which is disposed to be spaced apart from the ohmic electrode lines on the semiconductor layer and includes Schottky electrode lines disposed in the first direction, wherein the Schottky electrode lines and the ohmic electrode lines are alternately disposed in parallel, and the ohmic electrode part further includes first ohmic electrodes covered by the Schottky electrode lines on the semiconductor layer.
摘要翻译：公开了一种半导体器件，包括：基底; 设置在所述基底基板上的半导体层; 在所述半导体层上具有沿第一方向设置的欧姆电极线的欧姆电极部; 以及肖特基电极部，其设置为与半导体层上的欧姆电极线间隔开，并且包括沿第一方向设置的肖特基电极线，其中肖特基电极线和欧姆电极线交替地平行设置，并且欧姆电极部分还包括由半导体层上的肖特基电极线覆盖的第一欧姆电极。

10. 发明申请

US20110057231A1 Semiconductor device and method for manufacturing of the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057231A1
公开(公告)日：2011-03-10
申请号：US12654897
申请日：2010-01-07
申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
发明人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
IPC分类号： H01L29/47 , H01L21/20 , H01L21/28
CPC分类号： H01L29/0692 , H01L29/861 , H01L29/872
摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.
摘要翻译：本发明提供一种半导体器件，包括：基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件，其覆盖中心区域上的第一欧姆电极，并且与第二欧姆电极间隔开。

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