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1. 发明授权

US08563392B2 Method of forming an ALD material 有权
标题翻译：形成ALD材料的方法
公开(公告)号：US08563392B2
公开(公告)日：2013-10-22
申请号：US13310980
申请日：2011-12-05
申请人： Sandra Malhotra , Wim Deweerd , Edward Haywood , Hiroyuki Ode
发明人： Sandra Malhotra , Wim Deweerd , Edward Haywood , Hiroyuki Ode
IPC分类号： H01L21/02
CPC分类号： C23C16/45534 , C23C16/405 , H01L21/28562 , H01L21/32051 , H01L28/60
摘要： In some embodiments of the present invention, methods are developed wherein a gas flow of an electron donating compound (EDC) is introduced in sequence with a precursor pulse and alters the deposition of the precursor material. In some embodiments, the EDC pulse is introduced sequentially with the precursor pulse with a purge step used to remove the non-adsorbed EDC from the process chamber before the precursor is introduced. In some embodiments, the EDC pulse is introduced using a vapor draw technique or a bubbler technique. In some embodiments, the EDC pulse is introduced in the same gas distribution manifold as the precursor pulse. In some embodiments, the EDC pulse is introduced in a separate gas distribution manifold from the precursor pulse.
摘要翻译：在本发明的一些实施方案中，开发了一种方法，其中给电子化合物（EDC）的气流按前驱脉冲依次导入并改变前体材料的沉积。在一些实施方案中，EDC脉冲依次与前体脉冲一起引入，其中吹扫步骤用于在引入前体之前从处理室去除未吸附的EDC。在一些实施例中，使用蒸汽抽吸技术或起泡器技术引入EDC脉冲。在一些实施例中，EDC脉冲被引入与前驱脉冲相同的气体分配歧管中。在一些实施例中，EDC脉冲从前驱脉冲引入到单独的气体分配歧管中。

2. 发明申请

US20130143383A1 METHOD OF FORMING AN ALD MATERIAL 有权
标题翻译：形成ALD材料的方法
公开(公告)号：US20130143383A1
公开(公告)日：2013-06-06
申请号：US13310980
申请日：2011-12-05
申请人： Sandra Malhotra , Wim Deweerd , Edward Haywood , Hiroyuki Ode
发明人： Sandra Malhotra , Wim Deweerd , Edward Haywood , Hiroyuki Ode
IPC分类号： H01L21/02
CPC分类号： C23C16/45534 , C23C16/405 , H01L21/28562 , H01L21/32051 , H01L28/60
摘要： In some embodiments of the present invention, methods are developed wherein a gas flow of an electron donating compound (EDC) is introduced in sequence with a precursor pulse and alters the deposition of the precursor material. In some embodiments, the EDC pulse is introduced sequentially with the precursor pulse with a purge step used to remove the non-adsorbed EDC from the process chamber before the precursor is introduced. In some embodiments, the EDC pulse is introduced using a vapor draw technique or a bubbler technique. In some embodiments, the EDC pulse is introduced in the same gas distribution manifold as the precursor pulse. In some embodiments, the EDC pulse is introduced in a separate gas distribution manifold from the precursor pulse.
摘要翻译：在本发明的一些实施方案中，开发了方法，其中给电子化合物（EDC）的气流按前驱脉冲依次导入并改变前体材料的沉积。在一些实施方案中，EDC脉冲依次与前体脉冲一起引入，其中吹扫步骤用于在引入前体之前从处理室去除未吸附的EDC。在一些实施例中，使用蒸汽抽吸技术或起泡器技术引入EDC脉冲。在一些实施例中，EDC脉冲被引入与前驱脉冲相同的气体分配歧管中。在一些实施例中，EDC脉冲从前驱脉冲引入到单独的气体分配歧管中。

3. 发明授权

US08574985B2 Methods for depositing high-K dielectrics 有权
标题翻译：沉积高K电介质的方法
公开(公告)号：US08574985B2
公开(公告)日：2013-11-05
申请号：US13039819
申请日：2011-03-03
申请人： Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
发明人： Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
IPC分类号： H01L21/8242
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , H01L21/02186 , H01L21/02271 , H01L21/02315 , H01L21/31604 , H01L28/91
摘要： Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
摘要翻译：描述了沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种将氧化钛层沉积在暴露的金属上，其中所述氧化钛层包含至少一部分金红石型氧化钛。

4. 发明申请

US20110014359A1 Yttrium and Titanium High-K Dielectric Film 有权
标题翻译：钇和钛高K电介质膜
公开(公告)号：US20110014359A1
公开(公告)日：2011-01-20
申请号：US12921776
申请日：2009-04-17
申请人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
发明人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
IPC分类号： B05D5/12
CPC分类号： H01L28/65 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02697 , H01L21/3141 , H01L21/31604 , H01L27/10852 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.
摘要翻译：本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）具有高介电常数和低泄漏特性的方法，以及（b）相关的器件和结构。具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。如果需要，可以通过PVD工艺或者通过使用特定的前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺，作为反应过程的结果来生产氧化物层反应。

5. 发明授权

US08278735B2 Yttrium and titanium high-k dielectric films 有权
标题翻译：钇和钛高k电介质膜
公开(公告)号：US08278735B2
公开(公告)日：2012-10-02
申请号：US12901239
申请日：2010-10-08
申请人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
发明人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , C23C14/083 , C23C14/3464 , C23C16/405 , C23C16/45531 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/02266 , H01L21/0228
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.
摘要翻译：本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。如果需要，可以通过PVD工艺或者通过使用特定的前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺，作为反应过程的结果来生产氧化物层反应。

6. 发明申请

US20110203085A1 TITANIUM-BASED HIGH-K DIELECTRIC FILMS 有权
标题翻译：基于钛的高K电介质膜
公开(公告)号：US20110203085A1
公开(公告)日：2011-08-25
申请号：US13100538
申请日：2011-05-04
申请人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
发明人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
IPC分类号： H01G7/00
CPC分类号： H01G4/1218 , C23C16/405 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3141 , H01L21/3142 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.
摘要翻译：本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于含酰胺前体的TiO 2电介质。在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

7. 发明申请

US20120235276A1 ELECTRODE TREATMENTS FOR ENHANCED DRAM PERFORMANCE 审中-公开
标题翻译：用于增强DRAM性能的电极处理
公开(公告)号：US20120235276A1
公开(公告)日：2012-09-20
申请号：US13051531
申请日：2011-03-18
申请人： Xiangxin Rui , Hanhong Chen , Edward Haywood , Sandra Malhotra , Takashi Arao , Naonori Fujiwara , Toshiyuki Hirota , Takakazu Kiyomura , Kenichi Koyanagi
发明人： Xiangxin Rui , Hanhong Chen , Edward Haywood , Sandra Malhotra , Takashi Arao , Naonori Fujiwara , Toshiyuki Hirota , Takakazu Kiyomura , Kenichi Koyanagi
IPC分类号： H01L29/02 , H01L21/02
CPC分类号： H01L28/60 , H01L21/02 , H01L27/1085 , H01L28/40
摘要： A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.
摘要翻译：公开了一种用于制造动态随机存取存储器电容器的方法。该方法可以包括沉积第一氮化钛（TiN）电极; 在第一TiN电极上形成第一层二氧化钛（TiO 2）; 在第一层二氧化钛上沉积电介质材料; 以及在所述电介质材料上沉积第二TiN电极。

8. 发明申请

US20120156889A1 METHODS FOR FORMING HIGH-K CRYSTALLINE FILMS AND RELATED DEVICES 有权
标题翻译：用于形成高K晶体薄膜和相关器件的方法
公开(公告)号：US20120156889A1
公开(公告)日：2012-06-21
申请号：US13334618
申请日：2011-12-22
申请人： Hanhong Chen , Edward Haywood , Pragati Kumar , Sandra Malhotra , Xiangxin Rui
发明人： Hanhong Chen , Edward Haywood , Pragati Kumar , Sandra Malhotra , Xiangxin Rui
IPC分类号： H01L21/316
CPC分类号： H01L28/40 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L28/56 , H01L28/60
摘要： This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures.
摘要翻译：本公开提供了制造半导体堆叠和相关联的器件（诸如电容器或DRAM单元）的方法。在这种器件中，高K氧化锆基层可以与基于氮化钛的相对廉价的金属电极一起用作主要电介质。为了防止在器件形成期间电极的损坏，可以使用薄的阻挡层，在使用高温工艺和（高浓度或剂量）的臭氧试剂之前密封电极（即，产生高K氧化锆基层）。在一些实施例中，阻挡层也可以是基于氧化锆的，例如掺杂或未掺杂的无定形氧化锆的薄层。以这种方式制造器件有助于基于氧化锆和氮化钛形成具有大于40的介电常数的器件，并且通常有助于产生更便宜的，越来越致密的DRAM电池和其它半导体结构。

9. 发明申请

US20110151136A1 METHODS FOR DEPOSITING HIGH-K DIELECTRICS 有权
标题翻译：沉积高K电介质的方法
公开(公告)号：US20110151136A1
公开(公告)日：2011-06-23
申请号：US13039819
申请日：2011-03-03
申请人： Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
发明人： Xiangxin Rui , Sunil Shanker , Sandra Malhotra , Imran Hashim , Edward Haywood
IPC分类号： B05D3/06 , B05D3/02 , B05D5/12
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , H01L21/02186 , H01L21/02271 , H01L21/02315 , H01L21/31604 , H01L28/91
摘要： Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
摘要翻译：描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种在暴露的金属上沉积氧化钛层，其中所述氧化钛层包含至少一部分金红石型氧化钛。

10. 发明授权

US08900422B2 Yttrium and titanium high-K dielectric film 有权
标题翻译：钇和钛高K电介质膜
公开(公告)号：US08900422B2
公开(公告)日：2014-12-02
申请号：US12921776
申请日：2009-04-17
申请人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
发明人： Imran Hashim , Indranil De , Tony Chiang , Edward Haywood , Hanhong Chen , Nobi Fuchigami , Pragati Kumar , Sandra Malhotra , Sunil Shanker
IPC分类号： B05D5/12 , C23C14/34 , H01L49/02 , C23C16/40 , C23C16/455 , H01L21/314 , H01L21/316 , H01L27/108 , H01L21/02
CPC分类号： H01L28/65 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02697 , H01L21/3141 , H01L21/31604 , H01L27/10852 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on yttrium and titanium, to have a high dielectric constant and low leakage characteristic and (b) related devices and structures. An oxide layer having both yttrium and titanium may be fabricated either as an amorphous oxide or as an alternating series of monolayers. In several embodiments, the oxide is characterized by a yttrium contribution to total metal that is specifically controlled. The oxide layer can be produced as the result of a reactive process, if desired, via either a PVD process or, alternatively, via an atomic layer deposition process that employs specific precursor materials to allow for a common process temperature window for both titanium and yttrium reactions.
摘要翻译：本公开内容提供（a）制造基于钇和钛的氧化物层（例如，电介质层）的方法，以具有高介电常数和低泄漏特性，以及（b）相关的器件和结构。具有钇和钛的氧化物层可以制成无定形氧化物或交替的单层系列。在几个实施方案中，氧化物的特征在于对特定控制的总金属的钇贡献。如果需要，可以通过PVD工艺或者通过使用特定的前体材料以允许钛和钇的共同工艺温度窗口的原子层沉积工艺，作为反应过程的结果来生产氧化物层反应。

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