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1. 发明申请

US20140363948A1 Method of forming anneal-resistant embedded resistor for non-volatile memory application 有权
公开(公告)号：US20140363948A1
公开(公告)日：2014-12-11
申请号：US14468687
申请日：2014-08-26
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L45/00 , H01L21/285 , H01L49/02
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

2. 发明授权

US08847187B2 Method of forming anneal-resistant embedded resistor for non-volatile memory application 有权
公开(公告)号：US08847187B2
公开(公告)日：2014-09-30
申请号：US13692850
申请日：2012-12-03
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L29/02 , H01L45/00
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

3. 发明申请

US20140264223A1 Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells 有权
标题翻译：用于电阻式随机存储器存取单元的金属氮化铝嵌入式电阻器
公开(公告)号：US20140264223A1
公开(公告)日：2014-09-18
申请号：US13835256
申请日：2013-03-15
申请人： INTERMOLECULAR INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： Mihir Tendulkar , Randall J. Higuchi , Chien-Lan Hsueh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。

4. 发明申请

US20140175363A1 Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electrodes 有权
标题翻译：通过将氧气扩散到电极中形成非易失性存储元件
公开(公告)号：US20140175363A1
公开(公告)日：2014-06-26
申请号：US13721476
申请日：2012-12-20
申请人： INTERMOLECULAR INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.
摘要翻译：提供了形成包括电阻切换层的非易失性存储元件的方法。一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。作为该扩散的结果，前体层被转换成电阻切换层。前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。至少在退火之前，反应电极可以基本上不含氧。在氢气存在下，可以在250-400℃下进行退火。这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

5. 发明申请

US20140151621A1 Method of forming anneal-resistant embedded resistor for non-volatile memory application 有权
公开(公告)号：US20140151621A1
公开(公告)日：2014-06-05
申请号：US13692850
申请日：2012-12-03
申请人： INTERMOLECULAR INC. , KABUSHIKI KAISHA TOSHIBA , SANDISK 3D LLC
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

6. 发明授权

US09276210B1 Conductive barriers for ternary nitride thin-film resistors 有权
标题翻译：三元氮化物薄膜电阻的导电屏障
公开(公告)号：US09276210B1
公开(公告)日：2016-03-01
申请号：US14561212
申请日：2014-12-04
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar
IPC分类号： H01L45/00 , H01L27/00
CPC分类号： H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/16
摘要： In a thin-film resistor stack (e.g. A ReRAM embedded resistor), a metallic barrier layer 1-5 nm thick protects an underlying or overlying ternary metal nitride layer from unwanted oxidation while having negligible effect on the resistance or height of the stack. For devices subjected to temperatures over 650 C after forming the stack, the metallic barrier layer may be iridium or ruthenium. For devices with temperatures kept below 650 C after forming the stack, the metallic barrier layer may be Al. The metallic barrier layer(s) and the ternary nitride layer may be formed in situ, for example by sputtering or atomic layer deposition.
摘要翻译：在薄膜电阻器堆叠（例如A ReRAM嵌入式电阻器）中，1-5nm厚度的金属阻挡层保护下面或覆盖的三元金属氮化物层免受不希望的氧化，同时对堆叠的电阻或高度具有可忽略的影响。对于在形成叠层之后经受650℃以上温度的器件，金属阻挡层可以是铱或钌。对于在形成堆叠之后，温度保持在650℃以下的器件，金属阻挡层可以是Al。金属阻挡层和三元氮化物层可以原位形成，例如通过溅射或原子层沉积。

7. 发明授权

US08981329B1 Method of forming anneal-resistant embedded resistor for non-volatile memory application 有权
标题翻译：用于非易失性存储器应用的形成耐退火嵌入式电阻器的方法
公开(公告)号：US08981329B1
公开(公告)日：2015-03-17
申请号：US14548408
申请日：2014-11-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L29/02 , H01L45/00 , H01L49/02 , H01L27/24
CPC分类号： H01L45/146 , H01L21/28506 , H01L27/24 , H01L27/2409 , H01L27/2463 , H01L28/24 , H01L45/06 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1641
摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.
摘要翻译：本发明的实施例包括具有改进的器件性能和寿命的非易失性电阻随机存取存储器件的非易失性存储器件。在一些实施例中，非易失性电阻随机存取存储器件包括二极管，金属氮化硅嵌入式电阻器和设置在第一电极层和第二电极层之间的电阻开关层。在一些实施例中，形成电阻随机存取存储器件的方法包括形成二极管，形成金属氮化硅嵌入式电阻器，形成第一电极层，形成第二电极层，以及形成电阻开关层，层和第二电极层。

8. 发明申请

US20140377931A1 Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells 有权
公开(公告)号：US20140377931A1
公开(公告)日：2014-12-25
申请号：US14480025
申请日：2014-09-08
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , Randall J. Higuchi , Chien-Lan Hsueh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/165 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

9. 发明授权

US08895949B2 Nonvolatile memory device using a varistor as a current limiter element 有权
公开(公告)号：US08895949B2
公开(公告)日：2014-11-25
申请号：US14176882
申请日：2014-02-10
申请人： SanDisk 3D LLC , Kabushiki Kaisha Toshiba
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

10. 发明授权

US08796103B2 Forming nonvolatile memory elements by diffusing oxygen into electrodes 有权
标题翻译：通过将氧气扩散到电极中形成非易失性存储元件
公开(公告)号：US08796103B2
公开(公告)日：2014-08-05
申请号：US13721476
申请日：2012-12-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L21/16
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1266 , H01L45/146 , H01L45/1633
摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.
摘要翻译：提供了形成包括电阻切换层的非易失性存储元件的方法。一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。作为该扩散的结果，前体层被转换成电阻切换层。前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。至少在退火之前，反应电极可以基本上不含氧。在氢气存在下，可以在250-400℃下进行退火。这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

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