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    • 4. 发明授权
    • Nonvolatile memory device having an electrode interface coupling region
    • 具有电极接口耦合区域的非易失性存储器件
    • US09184383B2
    • 2015-11-10
    • US14156762
    • 2014-01-16
    • Intermolecular Inc.Kabushiki Kaisha ToshibaSanDisk 3D LLC
    • Yun WangTony P. ChiangImran Hashim
    • H01L45/00H01L27/24
    • H01L45/1608H01L27/2409H01L27/2436H01L27/2463H01L45/065H01L45/08H01L45/10H01L45/12H01L45/1226H01L45/1233H01L45/1253H01L45/145H01L45/146H01L45/1616H01L45/1625
    • Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.
    • 本发明的实施例一般涉及具有设置在至少一个电极和形成在非易失性存储器件中的可变电阻层之间的界面层结构的电阻式开关非易失性存储器件及其形成方法。 通常,电阻式开关存储器元件可以形成为可用于各种电子设备(例如数码相机,移动电话,手持式计算机和音乐播放器)的大容量非易失性存储器集成电路的一部分。 在电阻式开关非易失性存储器件的一种结构中,界面层结构包括钝化区域,界面耦合区域和/或可变电阻层接口区域,其被配置为调整非易失性存储器件的性能,例如降低形成 器件的开关电流并降低器件的成型电压,并降低从一个成形器件到另一个器件的性能变化。
    • 6. 发明申请
    • Nonvolatile Memory Device Having a Current Limiting Element
    • 具有限流元件的非易失性存储器件
    • US20150162530A1
    • 2015-06-11
    • US14625867
    • 2015-02-19
    • Intermolecular Inc.Kabushiki Kaisha ToshibaSanDisk 3D LLC
    • Yun WangTony P. ChiangImran Hashim
    • H01L45/00H01L27/24
    • H01L45/1253G11C13/0007G11C13/003G11C2213/56G11C2213/76H01L27/2409H01L27/2436H01L27/2463H01L45/08H01L45/12H01L45/1233H01L45/145H01L45/146H01L45/148H01L45/1616
    • Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
    • 本发明的实施例通常包括一种形成非易失性存储器件的方法,该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中,限流部件包括至少一层电阻材料,其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。 所形成的限流层或电阻层的电性能被配置为在逻辑状态编程步骤(即“设定”和“复位”步骤)期间通过添加固定的串联电阻来降低通过可变电阻层的电流 在形成在非易失性存储器件中的电阻式开关存储元件中。 通常,电阻式开关存储器元件可以形成为可用于各种电子设备(例如数码相机,移动电话,手持式计算机和音乐播放器)的大容量非易失性存储器集成电路的一部分。