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1. 发明授权

US09299928B2 Nonvolatile memory device having a current limiting element 有权
公开(公告)号：US09299928B2
公开(公告)日：2016-03-29
申请号：US14625867
申请日：2015-02-19
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Imran Hashim
IPC分类号： G11C11/00 , G11C13/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

2. 发明申请

US20160028008A1 ReRAM cells with diffusion-resistant metal silicon oxide layers 有权
公开(公告)号：US20160028008A1
公开(公告)日：2016-01-28
申请号：US14338979
申请日：2014-07-23
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition.

3. 发明授权

US09246091B1 ReRAM cells with diffusion-resistant metal silicon oxide layers 有权
标题翻译： ReRAM电池具有耐扩散性的金属氧化硅层
公开(公告)号：US09246091B1
公开(公告)日：2016-01-26
申请号：US14338979
申请日：2014-07-23
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Federico Nardi
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/1253 , H01L27/24 , H01L27/2409 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616
摘要： A metal silicon oxide barrier layer between a nitride electrode containing the same metal and an oxide variable-resistance layer in a ReRAM cell prevents the metal from diffusing into the variable-resistance layer and prevents oxygen from diffusing into and oxidizing the electrode. Compound oxides of the same metal and silicon with varying stoichiometries and metal/silicon ratios may optionally replace part or all of the variable-resistance layer, a defect-reservoir layer, or both. The metal nitride electrode may include a metal silicon nitride current-limiting portion. Optionally, all the layers sharing the common metal may be formed in-situ as part of a single unit process, such as atomic layer deposition.
摘要翻译：在ReRAM单元中含有相同金属的氮化物电极和氧化物可变电阻层之间的金属氧化硅阻挡层防止金属扩散到可变电阻层中，并防止氧气扩散到氧化电极。具有不同化学计量和金属/硅比的相同金属和硅的复合氧化物可任选地替代部分或全部可变电阻层，缺陷储层或两者。金属氮化物电极可以包括金属氮化硅限流部。可选地，共享公共金属的所有层可以原位形成为单个单元工艺的一部分，例如原子层沉积。

4. 发明授权

US09184383B2 Nonvolatile memory device having an electrode interface coupling region 有权
标题翻译：具有电极接口耦合区域的非易失性存储器件
公开(公告)号：US09184383B2
公开(公告)日：2015-11-10
申请号：US14156762
申请日：2014-01-16
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Imran Hashim
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625
摘要： Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.
摘要翻译：本发明的实施例一般涉及具有设置在至少一个电极和形成在非易失性存储器件中的可变电阻层之间的界面层结构的电阻式开关非易失性存储器件及其形成方法。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。在电阻式开关非易失性存储器件的一种结构中，界面层结构包括钝化区域，界面耦合区域和/或可变电阻层接口区域，其被配置为调整非易失性存储器件的性能，例如降低形成器件的开关电流并降低器件的成型电压，并降低从一个成形器件到另一个器件的性能变化。

5. 发明授权

US09178000B1 Resistive random access memory cells having shared electrodes with transistor devices 有权
标题翻译：具有与晶体管器件共享的电极的电阻式随机存取存储器单元
公开(公告)号：US09178000B1
公开(公告)日：2015-11-03
申请号：US14264280
申请日：2014-04-29
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Ryan C. Clarke , Tim Minvielle , Yun Wang
IPC分类号： H01L29/02 , H01L29/792 , H01L27/11 , H01L21/00 , H01L27/24 , H01L45/00 , H01L29/08 , H01L21/265 , H01L21/02
CPC分类号： H01L27/2463 , H01L21/02532 , H01L21/02595 , H01L21/265 , H01L27/2436 , H01L29/0847 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.
摘要翻译：提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

6. 发明申请

US20150162530A1 Nonvolatile Memory Device Having a Current Limiting Element 审中-公开
标题翻译：具有限流元件的非易失性存储器件
公开(公告)号：US20150162530A1
公开(公告)日：2015-06-11
申请号：US14625867
申请日：2015-02-19
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Imran Hashim
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括至少一层电阻材料，其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。所形成的限流层或电阻层的电性能被配置为在逻辑状态编程步骤（即“设定”和“复位”步骤）期间通过添加固定的串联电阻来降低通过可变电阻层的电流在形成在非易失性存储器件中的电阻式开关存储元件中。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

7. 发明授权

US08975727B2 Memory cell having an integrated two-terminal current limiting resistor 有权
标题翻译：具有集成的两端限流电阻的存储单元
公开(公告)号：US08975727B2
公开(公告)日：2015-03-10
申请号：US13721310
申请日：2012-12-20
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Tony P. Chiang , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Takeshi Yamaguchi
IPC分类号： H01L29/8605 , H01L45/00 , H01L27/24
CPC分类号： H01L45/12 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： A resistor structure incorporated into a resistive switching memory cell with improved performance and lifetime is provided. The resistor structure may be a two-terminal structure designed to reduce the maximum current flowing through a memory cell. A method is also provided for making such a memory cell. The method includes depositing a resistor structure and depositing a variable resistance layer of a resistive switching memory cell of the memory cell, where the resistor structure is disposed in series with the variable resistance layer to limit the switching current of the memory cell. The incorporation of the resistor structure is very useful in obtaining desirable levels of switching currents that meet the switching specification of various types of memory cells. The memory cells may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices.
摘要翻译：提供了一种结合到具有改进的性能和寿命的电阻式开关存储单元中的电阻器结构。电阻器结构可以是设计成减小流过存储器单元的最大电流的两端结构。还提供了一种用于制造这种存储单元的方法。该方法包括沉积电阻器结构并沉积存储单元的电阻式开关存储单元的可变电阻层，其中电阻器结构与可变电阻层串联布置以限制存储单元的开关电流。电阻器结构的结合对于获得满足各种类型的存储器单元的开关规范的期望的开关电流水平是非常有用的。存储单元可以形成为可用于各种电子设备的大容量非易失性存储器集成电路的一部分。

8. 发明申请

US20150034898A1 Confined Defect Profiling within Resistive Random Memory Access Cells 有权
标题翻译：电阻式随机存储器存取单元中的限制缺陷分析
公开(公告)号：US20150034898A1
公开(公告)日：2015-02-05
申请号：US14519376
申请日：2014-10-21
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Yun Wang , Vidyut Gopal , Chien-Lan Hsueh
IPC分类号： H01L45/00
CPC分类号： H01L45/10 , G11C13/0002 , G11C13/0007 , G11C2213/15 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L45/08 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.
摘要翻译：提供了电阻随机存取存储器（ReRAM）单元及其制造方法。可以对包括缺陷源层，缺陷阻挡层和设置在缺陷源层和缺陷阻挡层之间的缺陷受主层的堆叠进行退火。在退火过程中，缺陷以可控方式从缺陷源层转移到缺陷受体层。同时，缺陷不会转移到缺陷阻挡层中，从而在缺陷受体层内形成最低浓度区。该区域负责电阻交换。精确控制区域的尺寸和区域内的缺陷浓度允许ReRAM单元的电阻开关特性得到显着改善。在一些实施例中，缺陷源层包括氮氧化铝，缺陷阻挡层包括氮化钛，缺陷受主层包括氧化铝。

9. 发明申请

US20150008386A1 Morphology control of ultra-thin MeOx layer 有权
公开(公告)号：US20150008386A1
公开(公告)日：2015-01-08
申请号：US14492852
申请日：2014-09-22
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Federico Nardi , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/065 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1616 , H01L51/0098
摘要： A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

10. 发明申请

US20140353566A1 ReRAM materials stack for low-operating-power and high-density applications 有权
标题翻译： ReRAM材料堆叠用于低功耗和高密度应用
公开(公告)号：US20140353566A1
公开(公告)日：2014-12-04
申请号：US13903656
申请日：2013-05-28
申请人： Intermolecular Inc. , SanDisk 3D LLC , Kabushiki Kaisha Toshiba
发明人： Yun Wang , Tony P. Chiang , Dipankar Pramanik
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/1616 , H01L45/1641
摘要： A switching element for resistive-switching memory (ReRAM) provides a controllable, consistent filament break-point at an abrupt structural discontinuity between a layer of high-k high-ionicity variable-resistance (VR) material and a layer of low-k low-ionicity VR material. The high-ionicity layer may be crystalline and the low-ionicity layer may be amorphous. The consistent break-point and characteristics of the low-ionicity layer facilitate lower-power operation. The defects (e.g., oxygen or nitrogen vacancies) that constitute the filament originate either in the high-ionicity VR layer or in a source electrode. The electrode nearest to the low-ionicity layer may be intrinsically inert or may be rendered effectively inert. Some electrodes are rendered effectively inert by the creation of the low-ionicity layer over the electrode.
摘要翻译：用于电阻式开关存储器（ReRAM）的开关元件在高k高离子度可变电阻（VR）材料层和低k低电平层之间突然的结构不连续性时提供可控的一致的灯丝断裂点活性VR材料。高离子层可以是结晶的，低离子层可以是无定形的。低离子层的一致性断点和特性有利于低功率运行。构成长丝的缺陷（例如，氧或氮空位）起源于高离子性VR层或源电极。最接近低离子层的电极本质上是惰性的，或者可以有效地使其成为惰性的。通过在电极上产生低离子层，使一些电极变得有效地是惰性的。

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