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    • 1. 发明授权
    • Semiconductor light emitting devices
    • 半导体发光器件
    • US09431578B2
    • 2016-08-30
    • US14152128
    • 2014-01-10
    • Samsung Electronics Co., Ltd.
    • Myong Soo ChoTae Hun KimYoung Ho RyuYoung Chul ShinDong Myung Shin
    • H01L33/00H01L33/38
    • H01L33/382
    • In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.
    • 在一个示例性实施例中,半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极,第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。
    • 4. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US09300111B2
    • 2016-03-29
    • US14154556
    • 2014-01-14
    • SAMSUNG ELECTRONICS CO., LTD.
    • Jong Ho LeeChan Mook LimYoung Chul ShinSu Hyun Jo
    • H01L33/00H01S5/02H01L33/38H01L33/44
    • H01S5/02H01L33/0079H01L33/382H01L33/44
    • A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.
    • 半导体发光器件包括导电衬底,层叠在导电衬底上的第二导电型半导体层,有源层和第一导电型半导体层的发光层叠体,与第一导电型电连接的第一电极层 半导体层,在导电基板和第二导电类型半导体层之间的第二电极层,第二电极层电连接到第二导电类型半导体层,以及在有源层和第二电极层之间的钝化层,钝化层 层覆盖发光层压板的有源层的至少一个侧表面。