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1. 发明授权

US08981395B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US08981395B2
公开(公告)日：2015-03-17
申请号：US14101242
申请日：2013-12-09
申请人： Samsung Electronics Co., Ltd.
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20 , H01L33/38 , H01L33/20 , H01L33/40
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层叠的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

2. 再颁专利

USRE47417E1 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
公开(公告)号：USRE47417E1
公开(公告)日：2019-06-04
申请号：US14835327
申请日：2015-08-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20 , F02M19/02 , F02M9/127
CPC分类号： F02M19/0235 , F02M9/127
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

3. 发明授权

US09676047B2 Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same 有权
公开(公告)号：US09676047B2
公开(公告)日：2017-06-13
申请号：US14569402
申请日：2014-12-12
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yung Ho Ryu , Seung Woo Choi , Tae Hun Kim , Gyeong Seon Park , Jong Hoon Lim , Sung Joon Kim , Myong Soo Cho
IPC分类号： H01L33/62 , B23K1/20 , B23K1/00 , B23K35/26 , B23K35/28 , B23K35/30 , B23K35/32 , B23K35/02 , H01L23/00 , H01L33/00 , B23K20/02 , B23K20/16 , B23K20/233 , B23K101/40 , B23K101/42
CPC分类号： B23K1/0016 , B23K1/20 , B23K20/026 , B23K20/16 , B23K20/233 , B23K35/0238 , B23K35/0261 , B23K35/0272 , B23K35/262 , B23K35/264 , B23K35/268 , B23K35/282 , B23K35/3013 , B23K35/302 , B23K35/3033 , B23K35/3046 , B23K35/32 , B23K35/322 , B23K2101/40 , B23K2101/42 , H01L24/29 , H01L24/83 , H01L33/0079 , H01L2224/83193 , H01L2924/01322 , H01L2924/12042 , H01L2933/0066 , H01L2924/00
摘要： A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

4. 发明授权

US09196812B2 Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权
标题翻译：半导体发光器件和具有该半导体发光器件的半导体发光器件
公开(公告)号：US09196812B2
公开(公告)日：2015-11-24
申请号：US14543481
申请日：2014-11-17
申请人： Samsung Electronics Co., Ltd.
发明人： Myong Soo Cho , Yong-Il Kim , Jin Ha Kim , Kwang Min Song , Sang Seok Lee
IPC分类号： H01L33/44 , H01L33/62 , H01L33/20 , H01L33/40
CPC分类号： H01L33/62 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/44 , H01L2224/16225 , H01L2224/16245 , H01L2933/0091
摘要： In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.
摘要翻译：在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。发光结构包括在第一和第二导电类型半导体层之间的有源层。第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。

5. 发明授权

US09431578B2 Semiconductor light emitting devices 有权
标题翻译：半导体发光器件
公开(公告)号：US09431578B2
公开(公告)日：2016-08-30
申请号：US14152128
申请日：2014-01-10
申请人： Samsung Electronics Co., Ltd.
发明人： Myong Soo Cho , Tae Hun Kim , Young Ho Ryu , Young Chul Shin , Dong Myung Shin
IPC分类号： H01L33/00 , H01L33/38
CPC分类号： H01L33/382
摘要： In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.
摘要翻译：在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

6. 发明授权

US09406635B2 Semiconductor light emitting device and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件和使用其的半导体发光器件封装
公开(公告)号：US09406635B2
公开(公告)日：2016-08-02
申请号：US14693749
申请日：2015-04-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ju Heon Yoon , Yong Il Kim , Myong Soo Cho
IPC分类号： H01L23/00 , H01L33/62
CPC分类号： H01L24/16 , H01L24/05 , H01L24/13 , H01L33/44 , H01L33/62 , H01L2224/02125 , H01L2224/0401 , H01L2224/05551 , H01L2224/05552 , H01L2224/05557 , H01L2224/05567 , H01L2224/05572 , H01L2224/13022 , H01L2224/13027 , H01L2224/13111 , H01L2224/1607 , H01L2224/16106 , H01L2224/16258 , H01L2924/3512 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/014
摘要： A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.
摘要翻译：半导体发光器件包括多区域焊盘。半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。

7. 发明授权

US09379288B2 Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US09379288B2
公开(公告)日：2016-06-28
申请号：US14615116
申请日：2015-02-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Pun Jae Choi , Jae In Sim , Seok Min Hwang , Jin Hyun Lee , Myong Soo Cho , Ki Yeol Park
IPC分类号： H01L29/20 , H01L33/38 , H01L33/20 , H01L33/40 , H01L33/22 , H01L33/46 , H01L33/62 , H01L23/00
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

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