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1. 发明申请

US20130234170A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY 有权
标题翻译：具有多个细胞阵列的半导体发光器件
公开(公告)号：US20130234170A1
公开(公告)日：2013-09-12
申请号：US13786542
申请日：2013-03-06
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Chan Mook Lim , Jong Ho Lee , Jin Hwan Kim , Young Chul Shin , Su Hyun Jo , Jin Hyun Lee
IPC分类号： H01L27/15
CPC分类号： H01L27/153 , H01L33/38
摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.
摘要翻译：半导体发光器件（LED）包括具有第一多个电极的第一发光单元。第二发光单元包括第二多个电极。第一和第二发光单元被布置在基板上并且在物理上彼此分离。第一互连单元将第一多个电极电连接到第二多个电极。

2. 再颁专利

USRE47417E1 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
公开(公告)号：USRE47417E1
公开(公告)日：2019-06-04
申请号：US14835327
申请日：2015-08-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20 , F02M19/02 , F02M9/127
CPC分类号： F02M19/0235 , F02M9/127
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

3. 发明授权

US09123623B2 Semiconductor light emitting device having multi-cell array and method of manufacturing the same 有权
标题翻译：具有多单元阵列的半导体发光器件及其制造方法
公开(公告)号：US09123623B2
公开(公告)日：2015-09-01
申请号：US13933887
申请日：2013-07-02
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Su Hyun Jo , Jong Ho Lee , Jin Hyun Lee , Chan Mook Lim , Jin Hwan Kim
IPC分类号： H01L29/15 , H01L27/15 , H01L33/00 , H01L33/20
CPC分类号： H01L27/15 , H01L27/156 , H01L33/005 , H01L33/20 , H01L2933/0016
摘要： A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.
摘要翻译：一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。

4. 发明授权

US08957431B2 Semiconductor light emitting device having multi-cell array 有权
标题翻译：具有多单元阵列的半导体发光器件
公开(公告)号：US08957431B2
公开(公告)日：2015-02-17
申请号：US13786542
申请日：2013-03-06
申请人： Samsung Electronics Co., Ltd.
发明人： Chan Mook Lim , Jong Ho Lee , Jin Hwan Kim , Young Chul Shin , Su Hyun Jo , Jin Hyun Lee
IPC分类号： H01L33/00 , H01L27/15 , H01L33/38
CPC分类号： H01L27/153 , H01L33/38
摘要： A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.
摘要翻译：半导体发光器件（LED）包括具有第一多个电极的第一发光元件。第二发光单元包括第二多个电极。第一和第二发光单元被布置在基板上并且在物理上彼此分离。第一互连单元将第一多个电极电连接到第二多个电极。

5. 发明申请

US20130214317A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130214317A1
公开(公告)日：2013-08-22
申请号：US13764228
申请日：2013-02-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hyun Soo Kim , Joon-Seop Kwak , Ki Man Kang , Jin Hyun Lee , Yu Seung Kim , Cheol Soo Sone
IPC分类号： H01L33/64
CPC分类号： H01L33/641 , H01L33/14 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W.According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment.According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.

6. 发明授权

US09379288B2 Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US09379288B2
公开(公告)日：2016-06-28
申请号：US14615116
申请日：2015-02-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Pun Jae Choi , Jae In Sim , Seok Min Hwang , Jin Hyun Lee , Myong Soo Cho , Ki Yeol Park
IPC分类号： H01L29/20 , H01L33/38 , H01L33/20 , H01L33/40 , H01L33/22 , H01L33/46 , H01L33/62 , H01L23/00
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.
摘要翻译：提供了一种半导体发光器件，其包括具有彼此相对的第一和第二主表面的半导体叠层，并且包括分别限定第一和第二主表面的第一和第二导电型半导体层，以及插入在第一和第二主表面之间的有源层第二导电型半导体层; 穿过第二导电类型半导体层和有源层的多个接触孔以及第一导电型半导体层的一个区域; 设置在所述半导体叠层的第二主表面上的第一电极层，所述第一电极层通过所述接触孔延伸并连接到所述第一导电型半导体层的所述一个区域; 设置在所述半导体堆叠和所述第一电极层之间并连接到所述第二导电型半导体层的第二电极层; 以及第一和第二互连凸块。

7. 发明授权

US08981396B2 Semiconductor light emitting device, light emitting module, and illumination apparatus 有权
标题翻译：半导体发光器件，发光模块和照明设备
公开(公告)号：US08981396B2
公开(公告)日：2015-03-17
申请号：US13770710
申请日：2013-02-19
申请人： Samsung Electronics Co., Ltd.
发明人： Jin Hyun Lee , Bum Joon Kim , Seung Wan Chae , Chan Mook Lim , Jong Ho Lee , Jin Hwan Kim , Su Hyun Jo
IPC分类号： H01L29/207 , H01L33/08 , H01L27/15 , H01L33/38 , H01L33/62 , F21V29/00 , F21V3/00 , F21K99/00 , F21V15/01 , F21Y101/02
CPC分类号： H01L33/08 , F21K9/23 , F21V3/00 , F21V29/507 , F21V29/74 , F21Y2115/10 , H01L27/156 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.
摘要翻译：半导体发光器件包括基板，具有基底半导体层，第一导电型半导体层，有源层和第二导电型半导体层的半导体层叠体，其顺序地形成在基板上并被隔离区域划分为提供多个发光单元，插入在所述基底半导体层和所述第一导电型半导体层之间的中间分离层，分别连接到所述第一和第二导电类型半导体层的多个第一和第二电极多个发光单元，以及连接不同发光单元的第一和第二电极的布线单元。

8. 发明授权

US09070835B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09070835B2
公开(公告)日：2015-06-30
申请号：US14146689
申请日：2014-01-02
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Ju Heon Yoon , Sang Yeon Kim , Seung Hwan Lee , Jin Hyun Lee , Wan Tae Lim , Hyun Kwon Hong
IPC分类号： H01L33/38 , H01L33/40 , H01L33/44 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/40 , H01L33/44 , H01L2224/13 , H01L2933/0016
摘要： A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
摘要翻译：一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。

9. 发明授权

US08981395B2 Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权
标题翻译：半导体发光器件及其制造方法以及使用其的半导体发光器件封装
公开(公告)号：US08981395B2
公开(公告)日：2015-03-17
申请号：US14101242
申请日：2013-12-09
申请人： Samsung Electronics Co., Ltd.
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20 , H01L33/38 , H01L33/20 , H01L33/40
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层叠的第一电极层和导电基板的半导体发光器件，其中第二电极层在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

10. 发明授权

US08901581B2 Semiconductor light emitting device having multi-cell array and manufacturing method thereof, light emitting module, and illumination apparatus 有权
标题翻译：具有多单元阵列的半导体发光器件及其制造方法，发光模块和照明装置
公开(公告)号：US08901581B2
公开(公告)日：2014-12-02
申请号：US13895051
申请日：2013-05-15
申请人： Samsung Electronics Co., Ltd.
发明人： Chan Mook Lim , Jong Ho Lee , Jin Hwan Kim , Jin Hyun Lee , Su Hyun Jo , Hae Yeon Hwang
IPC分类号： H01L29/18 , H01L25/075 , H01L27/15 , H01L33/62
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/62 , H01L2224/24 , H01L2224/48091 , H01L2924/00014
摘要： A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided.
摘要翻译：半导体发光器件包括衬底和设置在衬底上的多个发光单元。每个发光单元包括其间形成有活性层的第一和第二导电半导体层，以及形成在第一和第二层上的第一和第二电极。第一绝缘层形成在发光单元的部分上，而第二绝缘层完全覆盖至少一个发光单元。还提供了制造半导体发光器件的方法，以及包括该半导体发光器件的发光模块和照明装置。

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