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    • 5. 发明授权
    • High side gate driver, switching chip, and power device
    • 高边栅极驱动器,开关芯片和功率器件
    • US09172356B2
    • 2015-10-27
    • US13688484
    • 2012-11-29
    • Samsung Electronics Co., Ltd.
    • Hyun-sik ChoiHo-jung KimJai-kwang ShinU-in Chung
    • H03B1/00H03K3/00G05F3/02H03K17/06
    • H03K3/00G05F3/02H01L2924/0002H03K17/06H01L2924/00
    • A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.
    • 提供分别包括保护装置的高侧栅极驱动器,开关芯片和功率器件。 高侧栅极驱动器包括:第一端子,被配置为接收被提供以关闭高侧常开开关的第一低电平驱动电源; 连接到第一端子的第一开关装置; 以及保护装置,串联连接在第一开关装置和高侧常开开关的栅极之间,保护装置被配置为吸收施加到高侧常开开关的栅极的电压的大部分。 功率器件包括高边栅驱动器。 此外,开关芯片包括具有相同结构的高边常开开关,附加常开开关和低边常开开关。