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1. 发明申请

US20060172552A1 N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films 有权
公开(公告)号：US20060172552A1
公开(公告)日：2006-08-03
申请号：US11046230
申请日：2005-01-31
申请人： Sameer Ajmera , Patricia Smith , Changming Jin
发明人： Sameer Ajmera , Patricia Smith , Changming Jin
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02332 , H01L21/0234 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801
摘要： A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

2. 发明申请

US20060057810A1 Surface preparation method for selective and non-selective epitaxial growth 有权
标题翻译：用于选择性和非选择性外延生长的表面制备方法
公开(公告)号：US20060057810A1
公开(公告)日：2006-03-16
申请号：US10939862
申请日：2004-09-13
申请人： Patricia Smith , Majid Mansoori , Shirin Siddiqui
发明人： Patricia Smith , Majid Mansoori , Shirin Siddiqui
IPC分类号： H01L21/336
CPC分类号： H01L29/66636 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/3065 , H01L29/165 , H01L29/66628
摘要： According to one embodiment of the invention, a surface preparation method for selective and non-selective epitaxial growth includes providing a substrate having a gate region, a source region, and a drain region, etching a first portion of the source region and the drain region, and removing a second portion of the source region and the drain region by a plasma comprising a noble gas and oxygen.
摘要翻译：根据本发明的一个实施例，用于选择性和非选择性外延生长的表面制备方法包括提供具有栅极区，源极区和漏极区的衬底，蚀刻源极区和漏极区的第一部分并且通过包含惰性气体和氧气的等离子体去除源极区域和漏极区域的第二部分。

3. 发明申请

US20070117341A1 HYDROGEN PLASMA PHOTORESIST STRIP AND POLYMERIC RESIDUE CLEANUP PROCESS FOR LOW DIELECTRIC CONSTANT MATERIALS 有权
标题翻译：用于低介电常数材料的氢等离子体光栅条和聚合物残留清洗工艺
公开(公告)号：US20070117341A1
公开(公告)日：2007-05-24
申请号：US11622821
申请日：2007-01-12
申请人： Patricia Smith , Mona Eissa
发明人： Patricia Smith , Mona Eissa
IPC分类号： H01L21/76
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
摘要翻译：一种制造形成在半导体晶片上的电子器件（200）的方法（100）。该方法形成相对于晶片处于固定位置的第一材料层（215）。第一种材料的介电常数小于3.6。该方法还在（216）中形成相对于第一材料层的固定位置的光致抗蚀剂层。该方法还响应于光致抗蚀剂层形成穿过第一材料层的至少一个空隙（220）。此外，方法将半导体晶片（106）将等离子体（106）包括包含氢的气体以除去光致抗蚀剂层。

4. 发明申请

US20050045206A1 Post-etch clean process for porous low dielectric constant materials 审中-公开
标题翻译：多孔低介电常数材料的蚀刻后清洁工艺
公开(公告)号：US20050045206A1
公开(公告)日：2005-03-03
申请号：US10647985
申请日：2003-08-26
申请人： Patricia Smith , Heungsoo Park , Eden Zielinski
发明人： Patricia Smith , Heungsoo Park , Eden Zielinski
IPC分类号： B08B7/00 , G03F7/40 , G03F7/42 , H01L21/311 , H01L21/316 , B08B3/04
CPC分类号： H01L21/76814 , B08B7/0035 , G03F7/40 , G03F7/42 , H01L21/31116 , H01L21/31695
摘要： Standard post-etch photoresist clean procedures for porous dielectric materials manufacturing may involve wet cleans in which a solvent is used for polymer residue removal. In many cases, the components of the solvent are absorbed into porous film layers and can later volatilize during subsequent metal deposition steps. A low pressure anneal of limited duration and high temperature, performed after the wet clean and prior to metal deposition, satisfactorily removes the absorbed components.
摘要翻译：用于多孔介电材料制造的标准蚀刻后光致抗蚀剂清洁方法可涉及其中使用溶剂用于聚合物残渣除去的湿法清洗。在许多情况下，溶剂的组分被吸收到多孔膜层中，并且随后在随后的金属沉积步骤中挥发。在湿清洁之后和在金属沉积之前执行的有限持续时间和高温的低压退火令人满意地去除吸收的组分。

5. 发明申请

US20050101125A1 Damage-free resist removal process for ultra-low-k processing 有权
标题翻译：用于超低k处理的无损伤抗蚀剂去除工艺
公开(公告)号：US20050101125A1
公开(公告)日：2005-05-12
申请号：US10702949
申请日：2003-11-06
申请人： Patricia Smith , Phillip Matz
发明人： Patricia Smith , Phillip Matz
IPC分类号： G03F7/42 , H01L21/306 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76802 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31133 , H01L21/31138
摘要： A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
摘要翻译：一种制造形成在半导体晶片上的电子器件（200）的方法（100）。该方法形成相对于晶片处于固定位置的第一材料层（215）。第一种材料的介电常数小于3.6。该方法还在（216）中形成相对于第一材料的层的固定位置的光致抗蚀剂层。该方法还响应于光致抗蚀剂层形成穿过第一材料层的至少一个空隙（220）。此外，方法将半导体晶片（106）将等离子体（106）包括包含氢的气体以除去光致抗蚀剂层。

6. 发明申请

US20070184666A1 Method for removing residue containing an embedded metal 审中-公开
标题翻译：去除含有嵌入金属的残留物的方法
公开(公告)号：US20070184666A1
公开(公告)日：2007-08-09
申请号：US11349864
申请日：2006-02-08
申请人： Patricia Smith , Heungsoo Park , Laura Matz , Vinay Shah , Phillip Matz
发明人： Patricia Smith , Heungsoo Park , Laura Matz , Vinay Shah , Phillip Matz
IPC分类号： H01L21/302 , H01L21/31
CPC分类号： H01L21/02063 , H01L21/76814
摘要： The present invention provides a method for removing residue from a cavity during the formation of an interconnect structure, a method for manufacturing an interconnect structure using the same, and a method for manufacturing an integrated circuit using the same. The method for removing residue from a cavity during the formation of an interconnect structure, among other steps, may include subjecting residue (410) having an embedded metal therein located within a cavity (310) in a dielectric layer (240) and over at least a portion of a conductive feature (220) to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal, and removing the residue (410) containing the oxidized embedded metal using an etch process.
摘要翻译：本发明提供了在形成互连结构期间从空腔中除去残留物的方法，使用该互连结构的互连结构的制造方法以及使用该互连结构的集成电路的制造方法。在互连结构形成期间除去空腔中的残留物的方法以及其它步骤可包括将位于介电层（240）内的位于空腔（310）内的嵌入金属的残余物（410）至少导电特征（220）的一部分延伸至短时间氧化过程，以便氧化大部分嵌入金属，以及使用蚀刻工艺去除含有氧化的嵌入金属的残余物（410）。

7. 发明申请

US20060281312A1 Hydrogen and oxygen based photoresist removal process 有权
标题翻译：氢和氧基光刻胶去除工艺
公开(公告)号：US20060281312A1
公开(公告)日：2006-12-14
申请号：US11147959
申请日：2005-06-08
申请人： Patricia Smith , Laura Matz , Vinay Shah
发明人： Patricia Smith , Laura Matz , Vinay Shah
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , G03F7/427
摘要： The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.
摘要翻译：本发明提供一种光致抗蚀剂去除方法及其制造方法。除了其他步骤之外，光致抗蚀剂去除方法的一个实施方案包括提供具有位于其上的光致抗蚀剂层的低介电常数（k）衬底，以及使用包含氢或氘和少量气体的等离子体去除光致抗蚀剂层的氧气小于约20体积％的气体。除了其他步骤之外，光致抗蚀剂去除方法的另一个实施方案包括提供具有位于其上的光致抗蚀剂层的低介电常数（k）衬底，使用包含氢或氘的气体的等离子体去除光致抗蚀剂层的主体部分，以及使用包含氧气的等离子体去除一部分光致抗蚀剂层，其中两个除去步骤的顺序是可互换的。

8. 发明申请

US20050215050A1 Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials 有权
标题翻译：用于低介电常数材料的氢等离子体光刻胶条和聚合物残渣清除工艺
公开(公告)号：US20050215050A1
公开(公告)日：2005-09-29
申请号：US11140771
申请日：2005-05-31
申请人： Patricia Smith , Mona Eissa
发明人： Patricia Smith , Mona Eissa
IPC分类号： G03F7/42 , H01L21/306 , H01L21/311 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
摘要翻译：一种制造形成在半导体晶片上的电子器件（200）的方法（100）。该方法形成相对于晶片处于固定位置的第一材料层（215）。第一种材料的介电常数小于3.6。该方法还在（216）中形成相对于第一材料层的固定位置的光致抗蚀剂层。该方法还响应于光致抗蚀剂层形成穿过第一材料层的至少一个空隙（220）。此外，方法将半导体晶片（106）将等离子体（106）包括包含氢的气体以除去光致抗蚀剂层。

9. 发明授权

US06420121B1 Prevention of cell migration initiation with CMV US28 receptor antagonists 失效
标题翻译：用CMV US28受体拮抗剂预防细胞迁移起始
公开(公告)号：US06420121B1
公开(公告)日：2002-07-16
申请号：US09387044
申请日：1999-08-31
申请人： Jay Nelson , Daniel Streblow , Cecilia Soderberg-Naucler , Patricia Smith , Fronziska Ruchti
发明人： Jay Nelson , Daniel Streblow , Cecilia Soderberg-Naucler , Patricia Smith , Fronziska Ruchti
IPC分类号： G01N3353
CPC分类号： G01N33/5061 , A61K31/00 , A61K31/395 , G01N33/5008 , G01N33/5029 , G01N33/566
摘要： There is disclosed an assay system for determining therapeutic activity for treating restenosis, atherosclerosis, chronic rejection syndrome and graft versus host disease (GVHD) by measuring inhibition of cell migration activity in smooth muscle cells expressing a US28 receptor from the CMV genome. Specifically, there is disclosed a method for measuring inhibition of cell migration in isolated cells transfected with US28 or infected with CMV and stimulated with a ligand. There is further disclosed a method for treating atherosclerosis, restenosis, chronic rejection syndrome and graft versus host disease (GVHD), comprising administering an effective amount of an agent that is a US28 receptor antagonist, wherein a US28 receptor antagonist comprises an inhibitor compound that prevents transduction of US28 receptor signal stimulated by a US28 receptor ligand, wherein a US28 receptor ligand is selected from the group consisting of RANTES, MIP-1&agr; and MCP. The invention further provides a method for treating restenosis, atherosclerosis, chronic rejection syndrome and GVHD by administering KHSV encoded vMIP-2, fractalkine or herbimycin.
摘要翻译：公开了通过测量来自CMV基因组的表达US28受体的平滑肌细胞中细胞迁移活性的抑制来确定治疗再狭窄，动脉粥样硬化，慢性排斥综合征和移植物抗宿主病（GVHD）的治疗活性的测定系统。具体地，公开了一种测量用US28转染或用CMV感染并用配体刺激的分离的细胞中细胞迁移抑制的方法。还公开了一种治疗动脉粥样硬化，再狭窄，慢性排斥综合征和移植物抗宿主病（GVHD）的方法，包括给予有效量的US28受体拮抗剂的试剂，其中US28受体拮抗剂包含防止 US28受体信号被US28受体配体刺激的转导，其中US28受体配体选自RANTES，MIP-1α和MCP。本发明还提供了一种通过施用编码的VHS-2，fractalkine或者草甘膦来治疗再狭窄，动脉粥样硬化，慢性排斥综合征和GVHD的方法。

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