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    • 1. 发明授权
    • Method to encapsulate copper plug for interconnect metallization
    • 封装用于互连金属化的铜插头的方法
    • US06696761B2
    • 2004-02-24
    • US09785108
    • 2001-02-20
    • Lap ChanSam Fong Yau LiHou Tee Ng
    • Lap ChanSam Fong Yau LiHou Tee Ng
    • H01L2348
    • H01L21/76849H01L21/7684H01L21/76879H01L23/485H01L23/53238H01L2924/0002H01L2924/00
    • An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug. The surface of the encapsulating metal deposit is formed by overgrowth above the plug hole followed by polishing the surface of the insulator layer removing the overgrowth of the metal layer polished by a CMP process to planarize the surface of the insulator layer which is the top surface of device to achieve coplanarity of metal layer with the topography of the insulator layer.
    • 掺杂硅半导体衬底上的封装铜插头具有覆盖有绝缘体的衬底表面,其上形成有扩散阻挡层的插塞孔,孔形成在孔的顶部和顶部。 塞孔部分地填充有无电沉积的铜金属塞。 封装金属沉积物对插头进行覆盖,而不会发生任何中间氧化和降解。 在从铜到铜的共沉积物的转变中,封装的Pt,Pd和/或Ag金属在无电镀浴中沉积而不氧化和降解,然后纯化沉积包封金属层以堵住塞子。 封装金属沉积物的表面通过在插塞孔上方过度生长而形成,随后抛光绝缘体层的表面,从而去除通过CMP工艺抛光的金属层的过度生长,以使作为顶部表面的绝缘体层的表面平坦化 器件实现金属层与绝缘体层的形貌的共面性。
    • 3. 发明授权
    • Method to encapsulate copper plug for interconnect metallization
    • 封装用于互连金属化的铜插头的方法
    • US06214728B1
    • 2001-04-10
    • US09196604
    • 1998-11-20
    • Lap ChanSam Fong Yau LiHou Tee Ng
    • Lap ChanSam Fong Yau LiHou Tee Ng
    • H01L2144
    • H01L21/76849H01L21/7684H01L21/76879H01L23/485H01L23/53238H01L2924/0002H01L2924/00
    • An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug. The surface of the encapsulating metal deposit is formed by overgrowth above the plug hole followed by polishing the surface of the insulator layer removing the overgrowth of the metal layer polished by a CMP process to planarize the surface of the insulator layer which is the top surface of device to achieve coplanarity of metal layer with the topography of the insulator layer.
    • 掺杂硅半导体衬底上的封装铜插头具有覆盖有绝缘体的衬底表面,其上形成有扩散阻挡层的插塞孔,孔形成在孔的顶部和顶部。 塞孔部分地填充有无电沉积的铜金属塞。 封装金属沉积物覆盖插塞,而不会发生任何中间氧化和降解。 在从铜到铜的共沉积物的转变中,封装的Pt,Pd和/或Ag金属在无电镀浴中沉积而不氧化和降解,然后纯化沉积包封金属层以堵住塞子。 封装金属沉积物的表面通过在插塞孔上方过度生长而形成,随后抛光绝缘体层的表面,从而去除通过CMP工艺抛光的金属层的过度生长,以使作为顶部表面的绝缘体层的表面平坦化 器件实现金属层与绝缘体层的形貌的共面性。
    • 4. 发明授权
    • High precision three-dimensional alignment system for lithography, fabrication and inspection
    • 用于光刻,制造和检验的高精度三维对准系统
    • US06181097B2
    • 2001-01-30
    • US09249281
    • 1999-02-11
    • Sam Fong Yau LiHou Tee Ng
    • Sam Fong Yau LiHou Tee Ng
    • G05B1940
    • G05B19/402B82Y10/00G05B2219/37404G05B2219/45028G05B2219/50379G11B9/14Y10S977/851Y10S977/856
    • The present invention provides a high precision three-dimensional alignment system using SPM techniques and method of using the same. The system comprises a fine distance control unit for the effective three-dimensional micromovement in the nanometer range of a planar object, and proximity detection unit to monitor the alignment process. In the preferred embodiment, the fine distance control unit comprises a set of at least three strategically positioned fine distance control elements which are capable of controlled expansion and contraction in the nanometer range. The most preferred embodiment of the fine distance control element comprises a piezoelectric tube, which crystal size may be varied by varying an applied voltage. This system may be applied to microlithography, in which case the planar object is a scribing tool having a planar base with multiple tips fabricated on one surface.
    • 本发明提供使用SPM技术的高精度三维对准系统及其使用方法。 该系统包括用于平面物体的纳米范围内的有效三维微运动的精细距离控制单元和用于监视对准过程的接近检测单元。 在优选实施例中,精细距离控制单元包括能够在纳米范围内控制膨胀和收缩的至少三个策略性定位的精细距离控制元件的集合。 精细距离控制元件的最优选实施例包括压电管,晶体尺寸可以通过改变施加电压而改变。 该系统可以应用于微光刻,在这种情况下,平面物体是具有在一个表面上制造的具有多个尖端的平面基底的划线工具。
    • 6. 发明授权
    • Potential gradient detector for electrophoresis
    • 电泳梯度检测器
    • US06843901B1
    • 2005-01-18
    • US09980361
    • 2000-06-01
    • Sam Fong Yau LiHongping WeiGuixin Zhang
    • Sam Fong Yau LiHongping WeiGuixin Zhang
    • G01N27/447
    • G01N27/4473
    • An on-column detector for electrophoresis samples based on the principles of potential gradient detection, in which the electrodes for detection are physically isolated from the electrophoretic separation process, but maintains the same electrical potential as the corresponding interior of the electrophoretic separation channel. Potential gradient detection is used to measure the applied electrical field at two points within the electrophoretic channel during electrophoresis. When sample components with conductivity different from the electrophoretic medium passes between these two points, it causes a change in the potential gradient between the two points, which would be sensed by the sensing electrodes of the detector and registered by a data acquisition system. The apparatus can make use of conventional separation channel as well as separation channels on microchips. In accordance with the present invention, a sensor with electrically conductive medium is added and connected to the separation channel via a conductive element on the surface of the separation channel.
    • 基于潜在梯度检测原理的电泳样品的柱上检测器,其中用于检测的电极与电泳分离过程物理隔离,但保持与电泳分离通道的相应内部相同的电位。 电位梯度检测用于测量电泳过程中电泳通道两点的施加电场。 当具有不同于电泳介质的电导率的样品组分在这两点之间通过时,会引起两点之间的电势梯度的变化,这两个点将由检测器的感测电极感测并由数据采集系统注册。 该设备可以利用传统的分离通道以及微芯片上的分离通道。 根据本发明,具有导电介质的传感器经由分离通道表面上的导电元件被添加并连接到分离通道。
    • 7. 发明授权
    • Optical detection system
    • 光学检测系统
    • US06759662B1
    • 2004-07-06
    • US09744626
    • 2001-01-26
    • Sam Fong Yau Li
    • Sam Fong Yau Li
    • G01T110
    • G01N27/44782G01N27/44721
    • An optical detection system comprising an electromagnetic radiation source, a source radiation focusing and collimating means, a photodetector, an emitted radiation focusing means and a source radiation blocking panel. The radiation source is used to direct source radiation onto a sample which is disposed in a sample platform. The source radiation focusing and collimating means is disposed between the radiation source and the sample for focusing and collimating the source radiation onto the sample. The photodetector is adapted for receiving radiation emitted from the sample which has been focused by the emitted radiation focusing means. The source radiation blocking panel, disposed between the source radiation focusing and collimating means and the sample, is unique in that it is capable of reducing light scattering and interference, such that a clear signal from each individual sample can be obtained by the photodetector.
    • 一种光学检测系统,包括电磁辐射源,源辐射聚焦和准直装置,光电检测器,发射的辐射聚焦装置和源辐射阻挡面板。 辐射源用于将源辐射引导到设置在样品平台中的样品上。 源辐射聚焦和准直装置设置在辐射源和样品之间,用于将源辐射聚焦并准直到样品上。 光电检测器适于接收由已发射的辐射聚焦装置聚焦的样品发射的辐射。 设置在源辐射聚焦和准直装置和样品之间的源极辐射阻挡面板是独特的,因为其能够减少光散射和干涉,使得可以通过光电检测器获得每个单独样品的清晰信号。
    • 8. 发明授权
    • Buffer for analyzing small inorganic cations by capillary electrophoresis
    • 通过毛细管电泳分析小无机阳离子的缓冲液
    • US06274017B1
    • 2001-08-14
    • US09319726
    • 1999-08-05
    • Sam Fong Yau LiTianlin Wang
    • Sam Fong Yau LiTianlin Wang
    • G01N2726
    • G01N27/44747
    • Disclosed herein is electrophoresis buffer and a buffer kit useful in the analysis of small cations in samples containing simple or complex mixture of ions and/or neutral organic compounds in a short time and to scan unknown samples for the small cations by capillary electrophoresis with indirect optical detection. An embodiment of the disclosed CE buffer comprises complexing agents and chromophore co-ions. One of the complexing agents is a multidentate one of donor atoms of oxygen and nitrogen, particularly nitrilotriacetic acid (NTA). Other complexing agents, if any, can be crown ethers, for example, 18-crown-6. The chromophore co-ions can be produced by introducing nitrogen-containing heterocyclic compounds, in particular pyridine, to the electrophoresis buffer. The desired pH of the buffer kit is between about 2 and 4. In a particularly preferred embodiment, the buffer kit comprises a UV chromophore co-ion of nitrogen-containing heterocyclic compound of pyridine in a range of about 1 mM to about 40 mM, a multidentate complexing agent of donor atoms of oxygen and nitrogen of nitrilotriacetic acid (NTA) in a range of about 0.1 mM to about 5 mM and a crown ether of 18-crown-6 in a range of about 0.1 mM to about 50 mM. The desired pH is about 3. Indirect UV detection is made at 254 nm.
    • 本文公开了电泳缓冲液和缓冲试剂盒,用于在短时间内分析含有离子和/或中性有机化合物的简单或复杂混合物的样品中的小阳离子,并通过间接光学毛细管电泳扫描未知样品的小阳离子 检测。 所公开的CE缓冲液的一个实施方案包括络合剂和发色团共离子。 络合剂之一是氧和氮的供体原子,特别是次氮基三乙酸(NTA)的多数个供体原子。 其他络合剂(如果有的话)可以是冠醚,例如18-冠-6。 可以通过将含氮杂环化合物,特别是吡啶引入电泳缓冲液来产生发色团共离子。 缓冲试剂盒的期望pH为约2至4。在特别优选的实施方案中,缓冲试剂盒包含吡啶的含氮杂环化合物的紫外发色团共离子,其范围为约1mM至约40mM, 在约0.1mM至约5mM的范围内的次氮基三乙酸(NTA)的氧和氮的供体原子的多齿络合剂和18-冠-6的冠醚在约0.1mM至约50mM的范围内。 所需的pH约为3.间接UV检测在254nm。