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1. 发明授权

US08338868B2 Shared photodiode image sensor 有权
标题翻译：共享光电二极管图像传感器
公开(公告)号：US08338868B2
公开(公告)日：2012-12-25
申请号：US12626343
申请日：2009-11-25
申请人： Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
发明人： Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
摘要翻译：提供具有共享光电二极管的图像传感器。图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路，扩散区。相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

2. 发明申请

US20100133590A1 SHARED PHOTODIODE IMAGE SENSOR 有权
标题翻译：共享光电图像传感器
公开(公告)号：US20100133590A1
公开(公告)日：2010-06-03
申请号：US12626343
申请日：2009-11-25
申请人： Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
发明人： Bong Ki Mheen , Albert J. P. Theuwissen , Jae Sik Sim , Mi Ran Park , Yong Hwan Kwon , Eun Soo Nam
IPC分类号： H01L31/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14641
摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.
摘要翻译：提供具有共享光电二极管的图像传感器。图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路，扩散区。相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

3. 发明授权

US08592247B2 Method of fabricating avalanche photodiode 有权
标题翻译：制造雪崩光电二极管的方法
公开(公告)号：US08592247B2
公开(公告)日：2013-11-26
申请号：US13273257
申请日：2011-10-14
申请人： Jae Sik Sim , Ki Soo Kim , Bong Ki Mheen , Myoung Sook Oh , Yong Hwan Kwon , Eun Soo Nam
发明人： Jae Sik Sim , Ki Soo Kim , Bong Ki Mheen , Myoung Sook Oh , Yong Hwan Kwon , Eun Soo Nam
IPC分类号： H01L21/00
CPC分类号： H01L31/107 , H01L31/184 , Y02E10/544
摘要： A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.
摘要翻译：一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

4. 发明授权

US07375504B2 Reference current generator 有权
标题翻译：参考电流发生器
公开(公告)号：US07375504B2
公开(公告)日：2008-05-20
申请号：US11299188
申请日：2005-12-09
申请人： Bong Ki Mheen , Min Hyung Cho , Chong Ki Kwon , Jin Yeong Kang
发明人： Bong Ki Mheen , Min Hyung Cho , Chong Ki Kwon , Jin Yeong Kang
IPC分类号： G05F3/16
CPC分类号： G05F3/30 , G05F3/262
摘要： Provided is a low-reference-current generator that includes a circuit employing two feedback loops enabling it to operate even at a low voltage, has a high power supply rejection ratio (PSRR) to control power supply noise, and simply forms a voltage without a voltage-to-current converter used in a conventional general reference current generator. The reference current generator includes: a first voltage generator receiving a predetermined current and generating a first voltage that decreases as temperature increases; a second voltage generator generating a second voltage that increases as temperature increases; a first current generator generating a first current corresponding to the first voltage; a second current generator generating a second current corresponding to the second voltage; and a reference current generator receiving the first current and the second current and generating a reference current that is the sum of the first current and the second current.
摘要翻译：提供了一种低参考电流发生器，其包括使用两个反馈回路的电路，使得其能够在低电压下操作，具有高电源抑制比（PSRR）以控制电源噪声，并且简单地形成不具有用于常规通用参考电流发生器的电压 - 电流转换器。参考电流发生器包括：接收预定电流并产生随温度升高而降低的第一电压的第一电压发生器; 产生随着温度升高而增加的第二电压的第二电压发生器; 产生对应于第一电压的第一电流的第一电流发生器; 产生对应于第二电压的第二电流的第二电流发生器; 以及参考电流发生器，接收第一电流和第二电流，并产生作为第一电流和第二电流之和的参考电流。

5. 发明申请

US20120187279A1 METHOD OF SENSING OF LOW-VOLTAGE IMAGE SENSOR 审中-公开
标题翻译：低电压图像传感器的传感方法
公开(公告)号：US20120187279A1
公开(公告)日：2012-07-26
申请号：US13432991
申请日：2012-03-28
申请人： Mi Jin KIM , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin KIM , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H04N5/235 , H04N5/3559 , H04N5/3597 , H04N5/374
摘要： A sensing method of an image sensor. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
摘要翻译：图像传感器的感测方法。图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量接收设备。

6. 发明申请

US20080093534A1 Image sensor for low-noise voltage operation 有权
标题翻译：用于低噪声电压操作的图像传感器
公开(公告)号：US20080093534A1
公开(公告)日：2008-04-24
申请号：US11866698
申请日：2007-10-03
申请人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Min Hyung Cho , Mi Jin Kim , Young Joo Song
IPC分类号： G01J1/44
CPC分类号： H04N5/3745 , H01L27/14603 , H01L27/14609 , H04N5/361
摘要： Provided are an image sensor and a driving circuit of a transfer transistor for charge transfer in a light receiving unit realized in the image sensor, in which a pixel is insufficiently reset to be always operated in a pseudo pinch-off condition, unlike a conventional reset method in which a pixel structure of a 4-transistor CMOS image sensor or its analogue has to be depleted, thereby reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels.The image sensor includes a conversion module for lowering a turn-on voltage of a signal or changing its waveform, a module for providing a negative voltage if necessary, and at least one module for limiting the slope of an output signal, and the characteristics of the image sensor are improved by operating the transfer transistor in the pseudo pinch-off mode.
摘要翻译：提供了一种在图像传感器中实现的光接收单元中的用于电荷转移的转移晶体管的图像传感器和驱动电路，其中像素不充分复位以始终以伪夹断状态操作，与常规复位不同必须耗尽4晶体管CMOS图像传感器或其类似物的像素结构的方法，从而减少光电二极管的复位电压并减少由于像素之间的特性不一致而产生的暗电流和固定图案噪声。图像传感器包括用于降低信号的导通电压或改变其波形的转换模块，如果需要的用于提供负电压的模块，以及用于限制输出信号的斜率的至少一个模块，以及通过在伪夹断模式中操作传输晶体管来改善图像传感器。

7. 发明授权

US08415603B2 Image sensor and method of driving transfer transistor of image sensor 有权
标题翻译：图像传感器和驱动图像传感器传输晶体管的方法
公开(公告)号：US08415603B2
公开(公告)日：2013-04-09
申请号：US12630071
申请日：2009-12-03
申请人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
IPC分类号： H01L31/062 , H04N5/335
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
摘要翻译：提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声由转移晶体管的操作条件的变化和像素间特性差异引起。图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压转移晶体管使得转移晶体管以伪夹断模式工作。

8. 发明授权

US07935918B2 Image sensor and method of driving transfer transistor of image sensor 有权
标题翻译：图像传感器和驱动图像传感器传输晶体管的方法
公开(公告)号：US07935918B2
公开(公告)日：2011-05-03
申请号：US12645588
申请日：2009-12-23
申请人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
发明人： Bong Ki Mheen , Mi Jin Kim , Young Joo Song
IPC分类号： H01L31/062 , H04N5/335
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
摘要翻译：提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声由转移晶体管的操作条件的变化和像素间特性差异引起。图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压转移晶体管使得转移晶体管以伪夹断模式工作。

9. 发明授权

US08169010B2 Low-voltage image sensor with sensing control unit formed within 有权
标题翻译：低压图像传感器与感应控制单元组成
公开(公告)号：US08169010B2
公开(公告)日：2012-05-01
申请号：US11932922
申请日：2007-10-31
申请人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H04N5/235 , H04N5/3559 , H04N5/3597 , H04N5/374
摘要： Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.
摘要翻译：提供了一种图像传感器及其感测方法。图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量接收设备。

10. 发明授权

US07829834B2 Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof 有权
标题翻译：具有用于抑制暗电流的光电二极管和扩散节点之间的多个栅极的低电压图像传感器及其驱动传输晶体管的方法
公开(公告)号：US07829834B2
公开(公告)日：2010-11-09
申请号：US11875513
申请日：2007-10-19
申请人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
发明人： Mi Jin Kim , Bong Ki Mheen , Young Joo Song , Seong Su Park
IPC分类号： H01L27/00 , H01J40/14 , H04N3/14
CPC分类号： H01L27/14603 , H01L27/14609 , H04N5/361 , H04N5/365 , H04N5/3745
摘要： Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
摘要翻译：提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法，并且可以消除电压或在光电二极管复位或传输操作时扩散节点的物理结构。图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。信号转换单元包括至少两个栅电极的转移晶体管。当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时，与扩散节点相邻设置的传输栅电极保持关闭。

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