会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of manufacturing a thin-film transistor with reinforced drain and
source electrodes
    • 制造具有加强漏极和源极的薄膜晶体管的方法
    • US6050827A
    • 2000-04-18
    • US4661
    • 1993-01-14
    • Sadatoshi TakechiTadanori HishidaFumiaki Funada
    • Sadatoshi TakechiTadanori HishidaFumiaki Funada
    • H01L29/78G02F1/136G02F1/1368H01L21/336H01L27/12H01L29/40H01L29/417H01L29/45H01L29/49H01L29/786
    • H01L29/66765H01L29/41733H01L29/458H01L29/4908H01L29/78681Y10S438/944
    • A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 .ANG. is in ohmic contact with underlying semiconductor film. A second layer film, formed on the first layer film has a thickness of more than about 2000 .ANG. and is a material having a sufficient adhesion strength even when formed at a temperature which is less than the temperature corresponding to the materials vapor pressure. Further, the materials used for the source and drain electrodes can be formed into thin films by ordinary sputtering or vacuum deposition techniques, low in cost, and readily available. A thin film transistor according to the present invention is formed on a substrate by the steps of: forming a gate electrode on the substrate; oxidizing the gate electrode to form a gate insulating film, the gate electrode and the gate insulating film forming a step; forming a thin film semiconductor on the gate insulating film; forming a first layer film portion of a source and drain electrode film laminate on the thin film semiconductor and in ohmic contact with the thin film semiconductor; and forming a second layer film portion of the source and drain electrode film laminate, the second layer film being an adhesion layer, convering the first layer film, and having a sufficient thickness to provide a continuous film across the step.
    • 一种薄膜晶体管,其中源极和漏极是包括至少两个层的薄膜叠层。 形成为10至700厚度的层压体的第一层膜与下面的半导体膜欧姆接触。 形成在第一层膜上的第二层膜具有大于约2000的厚度,并且即使在低于对应于材料蒸气压的温度的温度下形成时,也具有足够的粘合强度的材料。 此外,用于源电极和漏电极的材料可以通过普通溅射或真空沉积技术形成为薄膜,成本低且易于获得。 根据本发明的薄膜晶体管通过以下步骤形成在衬底上:在衬底上形成栅电极; 氧化栅电极以形成栅极绝缘膜,栅电极和栅绝缘膜形成步骤; 在栅极绝缘膜上形成薄膜半导体; 在所述薄膜半导体上形成源极和漏极电极膜层叠体的第一层膜部分,并与所述薄膜半导体欧姆接触; 以及形成所述源极和漏极电极膜层压体的第二层膜部分,所述第二层膜是粘合层,使所述第一层膜会聚,并且具有足够的厚度以在所述台阶上提供连续的膜。
    • 3. 发明授权
    • Hardness indicator
    • 硬度指示器
    • US06190611B1
    • 2001-02-20
    • US09141370
    • 1998-08-27
    • Kazuhiro TachinoYoshitami TsubotaSadatoshi TakechiJunichi NakajimaMasazumi YamashitaKatsufumi IsshikiTakeshi FukumuraYuuji Ukena
    • Kazuhiro TachinoYoshitami TsubotaSadatoshi TakechiJunichi NakajimaMasazumi YamashitaKatsufumi IsshikiTakeshi FukumuraYuuji Ukena
    • G01N3320
    • G01N33/1853G01N31/22
    • A harness indicator is highly reactive to a trace amount of Ca2+, and is slow to degrade in a high temperature environment of greater than 50° C. In one embodiment, the hardness indicator contains EBT, a pH buffer, and a masking agent as main components, and an admixture of Mg-EDTA. In another embodiment, the hardness indicator contains EBT, a pH buffer, and a masking agent as main components, and an admixture of anhydrous Mg-EDTA. In another embodiment, the hardness indicator contains EBT, a pH buffer, and a masking agent as main components, and an admixture of anhydrous Mg-EDTA and potassium sorbate. In a further embodiment, the hardness indicator contains EBT, a pH buffer, and a masking agent as main components, and an admixture of Mg-EDTA and potassium sorbate. In a further embodiment, the hardness indicator contains EBT, a pH buffer, and a masking agent as main components, and an admixture of potassium sorbate.
    • 线束指示器对痕量的Ca2 +具有高反应性,并且在大于50℃的高温环境中缓慢降解。在一个实施方案中,硬度指示剂含有EBT,pH缓冲剂和作为主要的掩蔽剂 组分和Mg-EDTA的混合物。 在另一个实施方案中,硬度指示剂含有EBT,pH缓冲剂和作为主要组分的掩蔽剂,以及无水Mg-EDTA的混合物。 在另一个实施方案中,硬度指示剂含有EBT,pH缓冲剂和掩蔽剂作为主要组分,以及无水Mg-EDTA和山梨酸钾的混合物。 在另一个实施方案中,硬度指示剂含有EBT,pH缓冲剂和掩蔽剂作为主要组分,以及Mg-EDTA和山梨酸钾的混合物。 在另一个实施方案中,硬度指示剂含有EBT,pH缓冲剂和作为主要成分的掩蔽剂,以及山梨酸钾的混合物。
    • 7. 发明授权
    • Driving technique for electrochromic displays of the segmented type
driving uncommon segment electrodes only
    • 仅用于分段式驱动不常用段电极的电致变色显示器的驱动技术
    • US4209770A
    • 1980-06-24
    • US871040
    • 1978-01-20
    • Hiroshi HamadaHiroshi TakeYasuhiko InamiSadatoshi TakechiHisashi Uede
    • Hiroshi HamadaHiroshi TakeYasuhiko InamiSadatoshi TakechiHisashi Uede
    • G09G3/16G06F3/14G09F9/32
    • G09G3/16
    • A driving technique is provided for an electro-optical display which includes an electrochromic material and a predetermined number of display electrodes, different combinations of the display electrodes defining different desired display patterns. The electrochromic phenomenon is developed within the electro-optical display upon a flow of current supplied through the display electrodes. In transition of a visual display from a specific display pattern to another, voltages are applied to only the one or more display electrodes which are not common to the two display patterns, while no voltages are applied to the one or more display electrodes common to the two display patterns. Applications of a coloration voltage to particular one or more display electrodes and a bleaching voltage to different one or more display electrodes in transition of a visual display are initiated at a same time to reduce the time period required to transcend from one visual display to another.
    • 提供了一种用于电光显示器的驱动技术,其包括电致变色材料和预定数量的显示电极,显示电极的不同组合限定了不同的所需显示图案。 在通过显示电极提供的电流流动下,在电光显示器内形成电致变色现象。 在将视觉显示从特定显示图案转换到另一显示图案的过程中,仅向两个显示图案不共同的一个或多个显示电极施加电压,而没有电压施加到一个或多个共同的显示电极 两种显示模式。 同时启动着色电压对特定一个或多个显示电极的应用和漂白电压到视觉显示器转换中的不同一个或多个显示电极,以减少从一个视觉显示器到另一视觉显示器所需的时间段。
    • 9. 发明授权
    • Structure of thin film transistors
    • 薄膜晶体管的结构
    • US4404578A
    • 1983-09-13
    • US173818
    • 1980-07-30
    • Yutaka TakafujiKeisaku NonomuraSadatoshi TakechiHisashi UedeTomio Wada
    • Yutaka TakafujiKeisaku NonomuraSadatoshi TakechiHisashi UedeTomio Wada
    • G02F1/1368H01L29/10H01L29/786H01L29/78H01L27/02
    • H01L29/78696G02F1/1368H01L29/1033H01L29/78681
    • A thin film transistor comprises a substrate, a gate electrode, a drain electrode, a source electrode, an insulative layer, and a semiconductor layer for the purpose of switching display signals to be applied to at least one display element of a display device. Preferably, the thin film transistor is mounted on the same substrate on which the display element is mounted. The selected material for the display element electrode is identical to at least one selected from the gate electrode, the source electrode, and the drain electrode. In another aspect of the present invention neither the gate electrode nor the insulating layer overlap either of the drain electrode or the source electrode. A resistance value of the semiconductor layer between the source and the drain electrodes is considerably less than the resistance value of the semiconductor channel layer controlled by the gate electrode. For this purpose, at least one of the width, thickness, and impurity concentration is varied therebetween. In a further aspect, the semiconductor channel has a substantial length more than the distance between the source electrode and the drain electrode with the help of a labyrinth passage.
    • 薄膜晶体管包括基板,栅电极,漏电极,源极,绝缘层和半导体层,用于切换要施加到显示装置的至少一个显示元件的显示信号。 优选地,薄膜晶体管安装在安装有显示元件的相同基板上。 所选择的用于显示元件电极的材料与从栅电极,源电极和漏极电极中选择的至少一种相同。 在本发明的另一方面,栅电极和绝缘层都不与漏电极或源电极重叠。 源电极和漏电极之间的半导体层的电阻值比由栅电极控制的半导体沟道层的电阻值要小得多。 为此,宽度,厚度和杂质浓度中的至少一个在它们之间变化。 在另一方面,借助于迷宫通道,半导体沟道的长度大于源电极和漏电极之间的距离。