专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09478323B2 Cu—Si—Co-based copper alloy for electronic materials and method for producing the same 有权
标题翻译：用于电子材料的Cu-Si-Co基铜合金及其制造方法
公开(公告)号：US09478323B2
公开(公告)日：2016-10-25
申请号：US14006735
申请日：2012-03-02
申请人： Yasuhiro Okafuji , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Hiroshi Kuwagaki
IPC分类号： C22C9/06 , H01B1/02 , C22F1/08 , C22C1/02
CPC分类号： H01B1/026 , C22C1/02 , C22C9/06 , C22F1/08
摘要： A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder.
摘要翻译：提供了具有增强的弹簧极限的Cu-Si-Co基合金。铜合金含有0.5-2.5质量％的Co，0.1-0.7质量％的Si，余量为Cu和不可避免的杂质，其中，从使用轧制表面作为参考的X射线衍射极图的测量得到的结果在α= 35°下通过β扫描相对于{200} Cu平面的{111} Cu平面中的衍射峰之间的角度为90°的峰高度为标准铜粉末的至少2.5倍。

2. 发明授权

US4610510A Liquid crystal display cell having stepped substrate ends and method for manufacture thereof 失效
标题翻译：具有台阶基板端的液晶显示单元及其制造方法
公开(公告)号：US4610510A
公开(公告)日：1986-09-09
申请号：US618450
申请日：1984-06-07
申请人： Fumiaki Funada , Hiroshi Kuwagaki , Kunihiko Yamamoto , Masataka Matsuura
发明人： Fumiaki Funada , Hiroshi Kuwagaki , Kunihiko Yamamoto , Masataka Matsuura
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： G02F1/1339 , Y10S359/90
摘要： A method for manufacturing a liquid crystal display cell comprises the steps of providing a first flexible substrate having a first end, providing a second flexible substrate which confronts the first flexible substrate and has an extended second end with respect to the first end of the first flexible substrate so as to form a stepped portion, depositing a sealing material at the stepped portion, depressing one method for the manufacture the first and second substrates against the other one, and cutting the first and second flexible substrates at 68 stepped portion.
摘要翻译：一种用于制造液晶显示单元的方法包括以下步骤：提供具有第一端的第一柔性基板，提供面对第一柔性基板的第二柔性基板，并且相对于第一柔性基板的第一端具有延伸的第二端基板，以形成台阶部分，在阶梯部分沉积密封材料，将第一和第二基板相对于另一个制造的一种方法压下，并将第一和第二柔性基板切割成阶梯部分。

3. 发明授权

US4310220A Electrochromic display with one porous separator 失效
标题翻译：电色显示与一个多孔分离器
公开(公告)号：US4310220A
公开(公告)日：1982-01-12
申请号：US54918
申请日：1979-07-05
申请人： Hiroshi Kuwagaki , Hiroaki Kato , Sadatoshi Takechi , Hiroshi Nakauchi , Yasuhiko Inami
发明人： Hiroshi Kuwagaki , Hiroaki Kato , Sadatoshi Takechi , Hiroshi Nakauchi , Yasuhiko Inami
IPC分类号： G02F1/15 , G02F1/153 , G02F1/161 , G02F1/17
CPC分类号： G02F1/1533 , G02F1/1523 , G02F1/161
摘要： A porous separator is provided with an electrochromic display for containing an electrolyte, whereby a display electrode is continuously, electrically rotated to a counter electrode through the electrolyte. A filter separator is further provided together with the porous separator for urging the porous separator toward the display electrode and itself toward the counter electrode because of the elastic characteristic thereof. The filter separator can also contain the electrolyte. The porous separator provides a white background for the display electrode. The remaining electrolyte, except for the electrolyte in both the porous and the filter separators, is eliminated from the electrochromic display to provide a cavity within the electrolyte for cancelling the cubic expansion of the electrolyte when temperature rises. This cubic expansion cancelling cavity may be formed by injecting a bubble into the electrolyte. The cavity is settled at a fixed position by the provision of an electrolyte-impregnated separator means without any interference with the display and counter electrodes.
摘要翻译：多孔隔板设置有用于容纳电解质的电致变色显示器，由此显示电极通过电解质连续电旋转到对电极。进一步与多孔分离器一起设置过滤分离器，由于其弹性特性，多孔分离器将多孔分离器朝向显示电极及其自身推向对电极。过滤分离器也可以包含电解质。多孔分离器为显示电极提供白色背景。在电致变色显示器中除去多孔和过滤分离器中的电解质以外的剩余电解质，以在温度升高时在电解质中提供用于消除电解液立方膨胀的空腔。可以通过将气泡注入到电解质中来形成该立方体膨胀消除腔。通过提供电解质浸渍的分离装置将空腔沉积在固定位置，而不会与显示器和对电极干涉。

4. 发明授权

US4257683A Electrochromic display 失效
标题翻译：电致变色显示
公开(公告)号：US4257683A
公开(公告)日：1981-03-24
申请号：US5682
申请日：1979-01-23
申请人： Hiroshi Kuwagaki , Hiroshi Hamada , Sadatoshi Takechi , Kohzo Yano
发明人： Hiroshi Kuwagaki , Hiroshi Hamada , Sadatoshi Takechi , Kohzo Yano
IPC分类号： G02F1/17 , G01D13/00 , G01K1/02 , G02F1/15 , G02F1/153 , G02F1/157 , G04G9/12 , G09F9/30
CPC分类号： G04G9/124 , G01D13/00 , G01K1/02 , G02F1/153
摘要： An electrochromic display disclosed herein is compatible with diversification of information to be displayed. A background plate bears a stationary display pattern printed thereon. An electrochromic phenomenon takes place between a pair of electrodes in association with the stationary display pattern.
摘要翻译：本文公开的电致变色显示器与待显示的信息的多样化兼容。背景板上印有固定的显示图案。在与静止显示图案相关联的一对电极之间发生电致变色现象。

5. 发明授权

US4150362A Regeneration of a memory state in electrochromic displays 失效
标题翻译：在电致变色显示器中再生记忆状态
公开(公告)号：US4150362A
公开(公告)日：1979-04-17
申请号：US817540
申请日：1977-07-20
申请人： Hisashi Uede , Yasuhiko Inami , Hiroshi Kuwagaki , Hiroshi Hamada , Tadanori Hishida , Hiroshi Nakauchi
发明人： Hisashi Uede , Yasuhiko Inami , Hiroshi Kuwagaki , Hiroshi Hamada , Tadanori Hishida , Hiroshi Nakauchi
IPC分类号： G02F1/163 , G09G3/19 , G09F9/32
CPC分类号： G02F1/163
摘要： A drive system is provided for an electrochromic display which includes an electrochromic material, a display pattern electrode and a counter electrode. The electrochromic phenomenon, or, reversible variations in the light absorption properties are developed when a predetermined voltage is applied between the display pattern electrode and the counter electrode. An erase pulse is applied to a bleached state display pattern electrode when a certain display pattern is held for a period longer than a memory period of the electrochromic display in order to regenerate the memory state and enhance the visibility.
摘要翻译：为包括电致变色材料，显示图案电极和对电极的电致变色显示器提供驱动系统。当在显示图案电极和对电极之间施加预定电压时，产生电致变色现象或光吸收特性的可逆变化。当某一显示图案被保持长于电致变色显示器的存储周期的时间段时，擦除脉冲被施加到漂白状态显示图案电极，以便再生存储状态并提高可视性。

6. 发明授权

US09476109B2 Cu—Ni—Si—Co copper alloy for electronic material and process for producing same 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
公开(公告)号：US09476109B2
公开(公告)日：2016-10-25
申请号：US13638431
申请日：2011-03-25
申请人： Hiroshi Kuwagaki
发明人： Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22C1/02 , C22F1/08 , H01B1/02
CPC分类号： C22C9/06 , C22C1/02 , C22F1/08 , H01B1/026
摘要： A Cu—Ni—Si—Co system alloy having an improved spring bending elastic limit is provided. The alloy is a copper alloy for electronic materials, which contains 1.0% to 2.5% by mass of Ni, 0.5% to 2.5% by mass of Co, and 0.3% to 1.2% by mass of Si, with the balance being Cu and unavoidable impurities, wherein from the results obtainable by an X-ray diffraction pole figure analysis using a rolled surface as a base, among the diffraction peak intensities of the {111}Cu plane with respect to the {200}Cu plane obtained by β scanning at α=35°, the peak height at a β angle of 90° of the copper alloy is at least 2.5 times the peak height of a standard copper powder.
摘要翻译：提供了具有改善的弹簧弯曲弹性极限的Cu-Ni-Si-Co系合金。该合金是电子材料用铜合金，其含有1.0质量％〜2.5质量％的Ni，0.5〜2.5质量％的Co，0.3〜1.2质量％的Si，余量为Cu且不可避免杂质，其中从{111} Cu平面相对于通过β扫描获得的{200} Cu平面的衍射峰强度中，通过使用轧制表面作为基底的X射线衍射极点图分析获得的结果 α= 35°时，铜合金的β角为90°的峰高为标准铜粉的峰高的2.5倍以上。

7. 发明授权

US09401230B2 Cu-Ni-Si-Co copper alloy for electronic materials and manufacturing method thereof 有权
标题翻译：用于电子材料的Cu-Ni-Si-Co铜合金及其制造方法
公开(公告)号：US09401230B2
公开(公告)日：2016-07-26
申请号：US13993648
申请日：2011-11-11
申请人： Hiroshi Kuwagaki
发明人： Hiroshi Kuwagaki
IPC分类号： C22F1/08 , C22C9/06 , C22C9/10 , C22F1/00 , H01B1/02 , C22F1/06
CPC分类号： H01B1/026 , C22C9/06 , C22C9/10 , C22F1/00 , C22F1/06 , C22F1/08
摘要： Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder.
摘要翻译：提供了能够防止下垂卷曲的强度和导电性之间具有优异平衡性的Cu-Ni-Si-Co铜合金带。用于电子材料的铜合金带含有1.0-2.5质量％的Ni，0.5-2.5质量％的Co，0.3-1.2质量％的Si，余量包括Cu和不可避免的杂质，其中铜合金带满足通过基于轧制表面的X射线衍射极点测量确定的以下（a）和（b）两者：（a）在α= 20°下通过β扫描获得的衍射峰强度，{ 200}极数，β角145°处的峰高不超过标准铜粉的5.2倍; （b）在{111}极图中，α= 75°的β扫描获得的衍射峰强度中，β角185°处的峰高不小于标准铜粉的峰值高度的3.4倍。

8. 发明申请

US20130180630A1 Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于电子材料的Cu-Co-Si基合金及其制造方法
公开(公告)号：US20130180630A1
公开(公告)日：2013-07-18
申请号：US13876185
申请日：2011-09-06
申请人： Yasuhiro Okafuji , Takuma Onda , Hiroshi Kuwagaki
发明人： Yasuhiro Okafuji , Takuma Onda , Hiroshi Kuwagaki
IPC分类号： H01B1/02
CPC分类号： H01B1/026 , C22C9/06 , C22F1/08 , H01H1/025
摘要： A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm2 is 5 μm or less.
摘要翻译：提供具有机械性能并且具有良好机械和电学性质的Cu-Co-Si基合金作为电子材料的铜合金。用于电子材料的铜合金包含0.5质量％至3.0质量％的Co，0.1质量％至1.0质量％的Si，余量为不可避免的杂质。平均粒径在3μm〜15μm的范围内，每个观察场中的最大粒径和最小粒径之间的平均差为0.05mm 2以下。

9. 发明申请

US20130092297A1 Cu-Co-Si System Alloy Sheet and Method for Manufacturing Same 审中-公开
标题翻译： Cu-Co-Si系合金板及其制造方法
公开(公告)号：US20130092297A1
公开(公告)日：2013-04-18
申请号：US13581715
申请日：2011-03-24
申请人： Hiroshi Kuwagaki
发明人： Hiroshi Kuwagaki
IPC分类号： C22C9/06 , C22F1/08
CPC分类号： C22C9/06 , C22F1/08 , H01B1/026
摘要： The present invention provides a Cu—Co—Si system alloy sheet, being suitable for use in a variety of electronic device components, in particular, having excellent uniform adhesive property for plate.The copper alloy sheet for electronic materials, contains 0.5 to 3.0 mass % Co, 0.1 to 1.0 mass % Si, the balance being Cu and unavoidable impurities, wherein an average grain size in the center part of the sheet thickness is 20 μm or less, and the number of the crystal grain, being tangent to a surface of the sheet and having 45 μm or more of the length of major axis, is 5 or less in the area of 1 mm in a rolling direction.
摘要翻译：本发明提供一种Cu-Co-Si系合金薄片，适用于各种电子器件部件，特别是对于板材具有优异的均匀粘合性能。用于电子材料的铜合金板包含0.5〜3.0质量％的Co，0.1〜1.0质量％的Si，余量为Cu和不可避免的杂质，其中，板厚中心部的平均粒径为20μm以下，并且与片材的表面相切并且具有长度为45μm的长度的晶粒的数量在轧制方向上的1mm的面积中为5以下。

10. 发明申请

US20130087255A1 Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS, AND METHOD OF MANUFACTURING SAME 有权
标题翻译：用于电子材料的Cu-Co-Si基铜合金及其制造方法
公开(公告)号：US20130087255A1
公开(公告)日：2013-04-11
申请号：US13701267
申请日：2011-04-08
申请人： Hiroshi Kuwagaki
发明人： Hiroshi Kuwagaki
IPC分类号： H01B1/02 , C22F1/08 , C22C9/10
CPC分类号： H01B1/026 , C22C9/01 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22F1/00 , C22F1/08
摘要： Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×1012 to 1×1014 particles/mm3, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.
摘要翻译：公开了一种用于电子材料的Cu-Co-Si基铜合金，其能够实现高水平的强度，导电性和抗凝固性; 含有0.5〜3.0质量％的Co，0.1〜1.0质量％的Si，余量为Cu和不可避免的杂质; 其中，在基体中析出的第二相粒子中，粒径为5nm以上且50nm以下的粒子的数密度为1×10 12〜1×10 14个/ mm 3，粒子数密度相对于粒径为10nm以上且50nm以下的粒子的数密度，粒径为5nm以上且小于10nm的粒子为3〜6。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式