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1. 发明授权

US5554939A Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same 失效
标题翻译：用于半导体晶片的非破坏性测量传感器及其制造方法
公开(公告)号：US5554939A
公开(公告)日：1996-09-10
申请号：US171026
申请日：1993-12-21
申请人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
发明人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
IPC分类号： G01B11/14 , G01N27/00 , G01R1/07 , G01R27/26 , G01R31/302 , H01L21/66 , G01R31/308
CPC分类号： G01R1/071
摘要： The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.
摘要翻译：本发明提供了一种新型的传感器，优选用于半导体的电气特性的非破坏性测量。该传感器容易制造并且具有足够高的绝缘击穿强度。传感器包括具有形成在锥形玻璃66的底面66a上的电极图案200的电极座64.底面66a具有用于反射激光束的反射面66c，测试电极201和三个平行调节电极 111至113围绕反射平面66c形成。底表面66a还具有设置在测试电极201和平行度调节器电极111至113之间的保护环120.绝缘膜68覆盖锥形玻璃66的下表面。在锥形玻璃的倾斜面66b上形成的接线 66连接到布线上端的外部引线。由于锥形玻璃66具有彼此平行的两个平坦表面，所以通过光刻法容易地在底表面66a上形成电极图案200。绝缘膜68有效地改善介电击穿强度。

2. 发明授权

US5225690A Gap measuring device and method using frustrated internal reflection 失效
标题翻译： GAP测量装置和使用示例性内部反射的方法
公开(公告)号：US5225690A
公开(公告)日：1993-07-06
申请号：US707152
申请日：1991-05-29
申请人： Takamasa Sakai , Motohiro Kouno , Sadao Hirae , Ikuyoshi Nakatani
发明人： Takamasa Sakai , Motohiro Kouno , Sadao Hirae , Ikuyoshi Nakatani
IPC分类号： G01B11/14 , G01B11/02 , G01B11/30
CPC分类号： G01B11/026 , G01B11/306
摘要： A narrow gap or unevenness of a surface of a specimen is measured by utilizing the tunnel effect of a light wave reflected at a boundary plane on the condition of total reflection. A laser beam emitted from a laser source is reflected at a surface of a prism on the condition of total reflection in terms of geometrical optics. If a gap between the surface of the prism and the specimen is about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen, and the intensity of the transmitted beam depends on the gap width. A portion of the laser beam is reflected at the boundary plane back into the prism. Therefore, the gap can be measured by measuring the transmittance of the laser beam and comparing the same with the calculated relation between the transmittance and the gap calculated in advance. In practice, the gap width is determined by measuring intensity of the reflected laser beam in the presence of the gap and comparing it to the intensity of the reflected laser beam in the absence of the gap, i.e, when the specimen surface is more than several wavelengths away from the reflecting surface.

3. 发明授权

US5444389A Method and apparatus for measuring lifetime of minority carriers in semiconductor 失效
标题翻译：用于测量半导体中少数载流子寿命的方法和装置
公开(公告)号：US5444389A
公开(公告)日：1995-08-22
申请号：US123443
申请日：1993-09-17
申请人： Sadao Hirae , Motohiro Kouno , Takamasa Sakai
发明人： Sadao Hirae , Motohiro Kouno , Takamasa Sakai
IPC分类号： G01N27/00 , G01R31/26 , G01R31/312 , H01L21/66 , G01R31/00
CPC分类号： G01R31/312 , G01R31/2648
摘要： A capacitor is connected to an insulating film on a semiconductor wafer. A high-frequency voltage with a bias is applied to the series combination of the semiconductor wafer and the capacitor. The bias voltage is changed stepwise, and the change of the total capacitance is measured. The minority carrier lifetime is calculated from the time-dependent change of the total capacitance.
摘要翻译：电容器连接到半导体晶片上的绝缘膜。将具有偏置的高频电压施加到半导体晶片和电容器的串联组合。偏置电压逐步变化，并测量总电容的变化。少数载流子寿命由总电容的时间依赖变化计算。

4. 发明授权

US5239183A Optical gap measuring device using frustrated internal reflection 失效
标题翻译：光学间隙测量装置使用沮丧的内部反射
公开(公告)号：US5239183A
公开(公告)日：1993-08-24
申请号：US869816
申请日：1992-04-16
申请人： Motohiro Kouno , Ikuyoshi Nakatani , Takamasa Sakai , Sadao Hirae
发明人： Motohiro Kouno , Ikuyoshi Nakatani , Takamasa Sakai , Sadao Hirae
IPC分类号： G01B11/02 , G01B11/14 , G01S17/46
CPC分类号： G01S17/46 , G01B11/026 , G01B11/14
摘要： The invention provides a device which utilizes the tunnel effect occuring upon a condition of geometric total reflection, for measuring a narrow gap and surface unevenness of a specimen with high precision. An optical device 40 includes a semi-conductor laser 42, a photodiode 43, and a waveguide layer 44 is formed on a semi-conductor substrate 41 by epitaxial growth. A reflecting surface 44b of the waveguide layer 44 is parallel to the plane of the semi-conductor substrate. A laser beam emitted from the semi-conductor laser is reflected from the reflecting surface 44b under a condition of total reflection in geometrical optics. When the gap between the reflecting surface and the specimen is less than or equal to about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen. The intensity of the transmitted light, which is calculated corresponding to the intensity of the reflected light, depends on the dimension of the gap. In the practice of the invention, the relationship between the transmittance and the dimension of the gap is previously obtained, and the dimension of the gap is determined corresponding to the transmittance measured. A narrow gap and the surface unevenness are accurately and precisely measured.
摘要翻译：本发明提供了一种利用在几何全反射条件下发生的隧道效应的装置，用于以高精度测量样品的窄间隙和表面不均匀性。光学器件40包括半导体激光器42，光电二极管43，并且通过外延生长在半导体衬底41上形成波导层44。波导层44的反射面44b平行于半导体基板的平面。从半导体激光器发射的激光束在几何光学中的全反射条件下从反射表面44b反射。当反射面与试样之间的间隙小于或等于激光束的波长时，激光束的一部分被传送到试样中。对应于反射光强度计算的透射光的强度取决于间隙的尺寸。在本发明的实践中，预先获得间隙的透射率和尺寸之间的关系，并且根据测量的透射率确定间隙的尺寸。准确而精确地测量窄间隙和表面凹凸。

5. 发明授权

US06598805B2 Substrate cleaning apparatus 失效
公开(公告)号：US06598805B2
公开(公告)日：2003-07-29
申请号：US10147243
申请日：2002-05-15
申请人： Takamasa Sakai , Sadao Hirae
发明人： Takamasa Sakai , Sadao Hirae
IPC分类号： B05B124
CPC分类号： H01L21/67051 , B08B3/00 , B08B2230/01 , Y10S134/902
摘要： A gas mixture of dry steam and nitrogen gas serving as carrier gas is blown into a hot water mist injection port for rendering the nitrogen gas serve as a medium absorbing latent heat of condensation, thereby smoothly progressing condensation of water vapor and efficiently forming hot water mist. The water vapor is condensed in the hot water mist injection port formed by a cylindrical pipe for supplying latent heat of condensation to the nitrogen gas and dilating the same, thereby accelerating the flow of the hot water mist and spraying the hot water mist to a substrate from the hot water mist injection port at a high speed. Small droplets contained in the high-speed hot water mist have high kinetic energy and high thermal energy, for exhibiting a large colliding effect and a high activation effect with respect to small contaminants adhering to the substrate. A substrate cleaning apparatus capable of spraying hot water mist attaining a high cleaning effect to a substrate is provided.

6. 发明授权

US5857474A Method of and apparatus for washing a substrate 失效
标题翻译：洗涤基材的方法和设备
公开(公告)号：US5857474A
公开(公告)日：1999-01-12
申请号：US766579
申请日：1996-12-12
申请人： Takamasa Sakai , Sadao Hirae , Minobu Matsunaga
发明人： Takamasa Sakai , Sadao Hirae , Minobu Matsunaga
IPC分类号： B08B5/02 , B08B7/00 , G11B23/50 , H01L21/00 , H01L21/304 , B08B3/10
CPC分类号： H01L21/67051 , B08B7/00 , B08B7/0014 , B08B7/0092 , G11B23/505 , Y10S134/902
摘要： A substrate washing apparatus includes a cooling system for cooling a substrate to below zero, a wet gas supplying system for supplying a gas containing atomized water to the surface of the substrate cooled by the cooling means to form ice on the surface of said substrate, and an ice removing unit for removing the ice formed on the surface of the substrate. This apparatus removes not only relatively large particles but also fine particles from the substrate.
摘要翻译：衬底洗涤装置包括用于将衬底冷却到零以下的冷却系统，用于将冷却装置冷却的含有雾化水的气体供给到所述衬底的表面的湿气供给系统，以在所述衬底的表面上形成冰，以及除冰单元，用于去除在基板的表面上形成的冰。该装置不仅从基板除去较大的颗粒，而且还除去细小的颗粒。

7. 发明申请

US20060191556A1 Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20060191556A1
公开(公告)日：2006-08-31
申请号：US11360891
申请日：2006-02-23
申请人： Yoshiyuki Nakazawa , Sadao Hirae , Takamasa Sakai
发明人： Yoshiyuki Nakazawa , Sadao Hirae , Takamasa Sakai
IPC分类号： C23G1/00 , H01L21/306
CPC分类号： H01L21/67017 , H01L21/02054 , H01L21/0209 , H01L21/67046 , H01L21/67051
摘要： In a substrate processing apparatus (1), a ring-shaped cover part (61) opposed to an annular surface (51a) of a rotating part (51) is provided and the rotating part (51) rotates the substrate (9) while holding the substrate (9). An exhaust flow space (64) connecting with a gap space (62) between the cover part (61) and the annular surface (51a) along an outer edge of the cover part (61) is formed by a duct main body (63) connected to the cover part (61) along the outer edge of the cover part (61). Since a cross-sectional area of the exhaust flow space (64) increases gradually along a rotation direction of the rotating part (51), it is possible to reduce variation of inlet flow speed of air around the gap space (62) and to suppress nonuniformity of processing of the substrate (9).
摘要翻译：在基板处理装置（1）中，设置与旋转部（51）的环状面（51a）相对的环状的盖部（61），旋转部（51）使基板（9）旋转，同时保持基板（9）。沿着盖部（61）的外缘与盖部（61）和环状面（51a）之间的间隙（62）连接的排气流通空间（64）由导管主体（63））沿着盖部（61）的外缘连接到盖部（61）。由于排气流动空间64的横截面积沿着旋转部51的旋转方向逐渐增大，因此能够减少间隙（62）周围的空气的入口流速的变动，抑制基板（9）的加工不均匀性。

8. 发明授权

US5233291A Method of and apparatus for measuring electric characteristics of semiconductor wafer 失效
标题翻译：用于测量半导体波形电特性的方法和装置
公开(公告)号：US5233291A
公开(公告)日：1993-08-03
申请号：US764493
申请日：1991-09-20
申请人： Motohiro Kouno , Ikuyoshi Nakatani , Takamasa Sakai
发明人： Motohiro Kouno , Ikuyoshi Nakatani , Takamasa Sakai
IPC分类号： H01L21/66 , G01B11/00 , G01B11/14 , G01N27/22 , G01R31/28
CPC分类号： G01R31/2831
摘要： A method of measuring C-V characteristics of a semiconductor wafer without forming an electrode on an oxide film thereof. An electrode 201 for C-V measurement is held above a semiconductor wafer 100 across a gap Ge of 1 micrometer or less, and a total capacity including that of the gap Ge is detected. The gap Ge is measured by utilizing the tunneling effect observed in total reflection of light wave. Parallelism of the electrode 201 to the wafer is adjusted by measuring the width of the gap or measuring the capacity of the gap at three different locations on the periphery of the electrode 201.

9. 发明授权

US07073521B2 Substrate processing apparatus comprising ring-shaped motor 失效
公开(公告)号：US07073521B2
公开(公告)日：2006-07-11
申请号：US10241281
申请日：2002-09-10
申请人： Takamasa Sakai
发明人： Takamasa Sakai
IPC分类号： B08B3/00
CPC分类号： H01L21/68792 , H01L21/67051 , H01L21/67109 , H02K1/16 , H02K5/20 , H02K7/088 , H02K7/14 , H02K9/19 , H02K17/12 , H02K41/025 , Y10S134/902
摘要： In a substrate processing apparatus for performing a substrate processing with a substrate being rotated, a ring-shaped motor is provided and a water pipe, a drainpipe and gas supply pipes are connected to a stationary part of the motor covered with a rotating part thereof. A gas from the gas supply pipes is supplied between the stationary part and the rotating part of the motor, thereby making the rotating part rotatable with a mechanism of a static pressure gaseous bearing (and a mechanical rotary). A group of induction coils are provided in a ring shape, and the water pipe and the drainpipe are connected to a duct for cooling water formed in the stationary part along the group of induction coils. This constitution allows removal of heat generated by the group of induction coils, to thereby achieving an adequate high-speed rotation of the substrate.

10. 发明授权

US4803948A Heat processing apparatus for semiconductor manufacturing 失效
标题翻译：半导体制造用热处理装置
公开(公告)号：US4803948A
公开(公告)日：1989-02-14
申请号：US36803
申请日：1987-04-10
申请人： Keiji Nakagawa , Ikuyoshi Nakatani , Takamasa Sakai , Yusuke Muraoka
发明人： Keiji Nakagawa , Ikuyoshi Nakatani , Takamasa Sakai , Yusuke Muraoka
IPC分类号： H01L21/205 , C23C16/44 , H01L21/00 , H01L21/22 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , H01L21/67109
摘要： A heat processing apparatus for manufacturing semiconductors is constructed such that an airtightly sealing part is provided at the tubular end having equal diameter to that of a main body of the apparatus, a ring shaped packing is wound on the outer circumference of a cylindrical tube adjacent to the end to be pressed between a pair of ring bodies which are formed with tapered edges of opposite inner sides, an inner tube having an equal diameter to that of the tube is connected with the end of the cylindrical tube through a cushioning material, on the outer circumference of the inner tube an outer tube is constructed integrally with one of the ring bodies, opening ends of both the inner and the outer tubes are adapted to be closed with a lid, and to the outer tube there are provided an exhausting tube for exhausting gas in the cylindrical tube and a gas introducing tube which interrupts an open air from the cylindrical tube with the flow of inert gas which flows when the lid is opened, and exhausting holes which connect with the exhausting tube and a plurality lines of gas holes for forming "gas curtain" are provided to the inner tube.
摘要翻译：构造半导体制造用热处理装置的结构是，在筒状端部设置气密密封部件，其直径与设备主体直径相等，环形填料卷绕在圆筒管的外圆周上被压在形成有相对内侧的锥形边缘的一对环体之间的端部，具有与管的直径相等的直径的内管通过缓冲材料与圆柱形管的端部连接，内管的外周，外管与其中一个环体一体地构成，内管和外管两端的开口端适于用盖封闭，并且在外管上设有用于在圆筒管中排出气体，以及气体导入管，其在盖打开时中断来自圆筒管的开放空气与惰性气体流动并且，在内管上设置有与排气管连接的排气孔和用于形成“气帘”的多排气孔。

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