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1. 发明申请

US20050202670A1 Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit 失效
标题翻译：半导体集成电路用绝缘膜用抛光剂及半导体集成电路的制造方法
公开(公告)号：US20050202670A1
公开(公告)日：2005-09-15
申请号：US11071182
申请日：2005-03-04
申请人： Sachie Shinmaru , Hiroyuki Kamiya , Atsushi Hayashi , Katsuyuki Tsugita
发明人： Sachie Shinmaru , Hiroyuki Kamiya , Atsushi Hayashi , Katsuyuki Tsugita
IPC分类号： C09G1/02 , C09K3/14 , H01L21/302 , H01L21/3105 , H01L21/321 , H01L21/46 , H01L21/461 , H01L21/4763
CPC分类号： C09K3/1409 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.
摘要翻译：包括具有C-Si键和Si-O键的有机硅材料的绝缘膜用于半导体集成电路，并且用于抛光其表面，包括水和至少一种特定稀土化合物的颗粒的抛光化合物选自稀土氧化物，稀土氟化物，稀土氧氟化物，除了氧化铈以外的稀土氧化物及其复合化合物，或具有上述组成并且还含有氧化铈颗粒的抛光化合物是用过的。可以提供高质量的抛光表面，其没有或具有减少的缺陷，例如裂纹，划痕或膜剥离。

2. 发明授权

US07378348B2 Polishing compound for insulating film for semiconductor integrated circuit and method for producing semiconductor integrated circuit 失效
标题翻译：半导体集成电路用绝缘膜用抛光剂及半导体集成电路的制造方法
公开(公告)号：US07378348B2
公开(公告)日：2008-05-27
申请号：US11071182
申请日：2005-03-04
申请人： Sachie Shinmaru , Hiroyuki Kamiya , Atsushi Hayashi , Katsuyuki Tsugita
发明人： Sachie Shinmaru , Hiroyuki Kamiya , Atsushi Hayashi , Katsuyuki Tsugita
IPC分类号： H01L21/302
CPC分类号： C09K3/1409 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An insulating film comprising an organic silicon material having a C—Si bond and a Si—O bond is used for a semiconductor integrated circuit, and for polishing of its surface, a polishing compound comprising water and particles of at least one specific rare earth compound selected from the group consisting of a rare earth oxide, a rare earth fluoride, a rare earth oxyfluoride, a rare earth oxide except cerium oxide and a composite compound thereof, or a polishing compound having the above composition and further containing cerium oxide particles, is used. It is possible to provide a high quality polished surface which is free from or has reduced defects such as cracks, scratches or film peeling.
摘要翻译：包括具有C-Si键和Si-O键的有机硅材料的绝缘膜用于半导体集成电路，并且用于抛光其表面，包括水和至少一种特定稀土化合物的颗粒的抛光化合物选自稀土氧化物，稀土氟化物，稀土氧氟化物，除了氧化铈以外的稀土氧化物及其复合化合物，或具有上述组成并且还含有氧化铈颗粒的抛光化合物是用过的。可以提供高质量的抛光表面，其没有或具有减少的缺陷，例如裂纹，划痕或膜剥离。

3. 发明授权

US06679761B1 Polishing compound for semiconductor containing peptide 失效
标题翻译：含半胱氨酸肽的抛光剂
公开(公告)号：US06679761B1
公开(公告)日：2004-01-20
申请号：US10111410
申请日：2002-05-06
申请人： Kazuo Sunahara , Katsuyuki Tsugita , Sachie Shinmaru
发明人： Kazuo Sunahara , Katsuyuki Tsugita , Sachie Shinmaru
IPC分类号： B24B100
CPC分类号： C09G1/02 , C09K3/1463
摘要： A polishing compound and a polishing method are provided, whereby in a CMP process in a process for production of a semiconductor device, a metal layer and/or a barrier layer, etc., can be polished while suppressing excessive oxidation of the metal layer, and the polishing rate can be adjusted depending upon the application. A polishing compound comprising polishing abrasive grains and a peptide, a polishing compound slurry having such a polishing compound suspended in an aqueous medium, preferably together with an oxidizing agent and preferably at a pH of at least 7, and a method for polishing a metal layer of e.g. Cu and/or a barrier layer, formed on a semiconductor substrate, by polishing with an abrasive cloth of a CMP apparatus having such a polishing compound slurry supported thereon, are disclosed.
摘要翻译：提供了抛光剂和抛光方法，由此在制造半导体器件的工艺中的CMP工艺中，金属层和/或阻挡层等可被抛光，同时抑制金属层的过度氧化，并且可以根据应用来调整抛光速率。包括抛光磨粒和肽的抛光化合物，具有悬浮在水性介质中的抛光化合物的抛光化合物浆料，优选与氧化剂一起，优选在至少7的pH下，以及抛光金属层的方法例如 Cu和/或阻挡层，通过用其上载有研磨化合物浆料的CMP设备的研磨布进行研磨，形成在半导体衬底上。

4. 发明申请

US20080272088A1 POLISHING COMPOUND AND POLISHING METHOD 审中-公开
标题翻译：抛光复合和抛光方法
公开(公告)号：US20080272088A1
公开(公告)日：2008-11-06
申请号：US12025156
申请日：2008-02-04
申请人： Hiroyuki KAMIYA , Katsuyuki Tsugita
发明人： Hiroyuki KAMIYA , Katsuyuki Tsugita
IPC分类号： B44C1/22 , C09K13/00
CPC分类号： H05K3/045 , C09G1/02 , C09K3/1463 , H01L21/3212 , H05K3/107 , H05K3/26 , H05K2201/0209 , H05K2203/025 , H05K2203/0786
摘要： To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput.The polishing compound T comprises an oxidizing agent, an electrolyte and an aqueous medium, wherein ions formed from the electrolyte comprise ammonium ions, at least one type of organic carboxylate ions selected from the group consisting of polycarboxylate ions and hydroxycarboxylate ions, and at least one type of ions selected from the group consisting of carbonate ions, hydrogencarbonate ions, sulfate ions and acetate ions.A wiring trench 2 is formed in a resin substrate 1, then a wiring metal 3 is embedded in the wiring trench 2, and the wiring metal 3 is polished by using the above-mentioned polishing compound, whereby it is possible to minimize formation of scratches on the metal wiring 3 and to improve the throughput.
摘要翻译：提供能够最小化待研磨物体（例如树脂基板或金属布线）上的划痕的形成的抛光剂，以高的去除率进行研磨。为了进一步提供能够最小化在树脂基板或金属布线上形成划痕并且提高生产量的抛光方法。抛光化合物T包括氧化剂，电解质和水性介质，其中由电解质形成的离子包含铵离子，至少一种选自聚羧酸根离子和羟基羧酸根离子的有机羧酸根离子，以及至少一种选自碳酸根离子，碳酸氢根离子，硫酸根离子和乙酸根离子的离子类型。在树脂基板1上形成布线沟槽2，然后将布线金属3埋设在布线沟槽2中，并且通过使用上述抛光剂对布线金属3进行研磨，从而可以最小化划痕的形成并且提高生产量。

5. 发明申请

US20100009540A1 POLISHING COMPOUND, ITS PRODUCTION PROCESS AND POLISHING METHOD 审中-公开
标题翻译：抛光化合物，其生产工艺和抛光方法
公开(公告)号：US20100009540A1
公开(公告)日：2010-01-14
申请号：US12564169
申请日：2009-09-22
申请人： Hiroyuki KAMIYA , Katsuyuki Tsugita
发明人： Hiroyuki KAMIYA , Katsuyuki Tsugita
IPC分类号： H01L21/304
CPC分类号： C09K3/1463
摘要： A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.
摘要翻译：一种用于基材的化学机械抛光的抛光剂，其包含（A）磨粒，（B）水性介质，（C）酒石酸，（D）三羟甲基氨基甲烷和（E）至少一种选自丙二酸和马来酸，更优选还含有具有在布线金属表面上形成保护膜的功能的化合物，以防止布线金属部分如苯并三唑的凹陷。通过使用该研磨用化合物，半导体集成电路基板的表面的铜布线能够以高的去除率进行抛光，同时抑制疤痕的形成，作为研磨工序的缺陷。特别是在具有由钽或钽化合物制成的膜作为阻挡膜的铜布线的研磨的第一研磨步骤中，可以获得极好的选择性，因此不太可能发生由于抛光引起的凹陷和侵蚀，并且极高的精密平面可以获得半导体集成电路板。

6. 发明申请

US20050194565A1 Polishing compound, its production process and polishing method 审中-公开
标题翻译：抛光料，其生产工艺和抛光方法
公开(公告)号：US20050194565A1
公开(公告)日：2005-09-08
申请号：US11088788
申请日：2005-03-25
申请人： Hiroyuki Kamiya , Katsuyuki Tsugita
发明人： Hiroyuki Kamiya , Katsuyuki Tsugita
IPC分类号： C09G1/02 , C09K3/14 , C09K13/00 , C09K13/06 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.
摘要翻译：一种用于基材的化学机械抛光的抛光剂，其包含（A）磨粒，（B）水性介质，（C）酒石酸，（D）三羟甲基氨基甲烷和（E）至少一种选自丙二酸和马来酸，更优选还含有具有在布线金属表面上形成保护膜的功能的化合物，以防止布线金属部分如苯并三唑的凹陷。通过使用该研磨用化合物，半导体集成电路基板的表面的铜布线能够以高的去除率进行抛光，同时抑制疤痕的形成，作为研磨工序的缺陷。特别是在具有由钽或钽化合物制成的膜作为阻挡膜的铜布线的研磨的第一研磨步骤中，可以获得极好的选择性，因此不太可能发生由于抛光引起的凹陷和侵蚀，并且极高的精密平面可以获得半导体集成电路板。

7. 发明授权

US08563769B2 Fluorine-containing compound, fluorine-containing surfactant and compositions containing same 有权
标题翻译：含氟化合物，含氟表面活性剂和含有它们的组合物
公开(公告)号：US08563769B2
公开(公告)日：2013-10-22
申请号：US13388195
申请日：2010-07-26
申请人： Katsuyuki Tsugita , Masato Mitsuhashi
发明人： Katsuyuki Tsugita , Masato Mitsuhashi
IPC分类号： C07C305/04 , C07C309/14 , B01F17/00 , B01F17/16 , C09G1/04 , C09G1/16 , C09K3/00
CPC分类号： C07C309/14 , C07C305/04 , C09G1/14
摘要： A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t— (2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.
摘要翻译：提供了尽管不具有全氟烷基的链长为8或更大的全氟烷基，其具有优异的表面张力降低能力的含氟化合物，这是PFOS和PFOA问题的原因，以及使用环境负荷低的氟材料。还提供了含氟表面活性剂及其组合物，水性树脂乳液和含有这种表面活性剂的地板油漆组合物。含氟化合物由下式（1）表示：Rf1-CpH2p-CH（OH）-CqH2q-NR-CrH2r-（O）n-SO3M（1）其中Rf1为C1-6全氟烷基，p ，q和r分别为1〜6的整数，M为阳离子性原子或原子团，n为0或1，R为氢原子，碳原子数为1〜12的烷基或下述式 2）：Rf2-CsH2s-CH（OH）-CtH2t-（2）其中Rf2为C1-6全氟烷基，s和t独立地为1〜6的整数。

8. 发明申请

US20120132103A1 FLUORINE-CONTAINING COMPOUND, FLUORINE-CONTAINING SURFACTANT AND COMPOSITIONS CONTAINING SAME 有权
标题翻译：含氟化合物，含荧光体的表面活性剂及其组合物
公开(公告)号：US20120132103A1
公开(公告)日：2012-05-31
申请号：US13388195
申请日：2010-07-26
申请人： Katsuyuki Tsugita , Masato Mitsuhashi
发明人： Katsuyuki Tsugita , Masato Mitsuhashi
IPC分类号： C09G1/04 , C07C309/14
CPC分类号： C07C309/14 , C07C305/04 , C09G1/14
摘要： A fluorine-containing compound exhibiting excellent surface tension-reducing ability despite the absence of perfluoroalkyl group having a chain length of 8 or more which had been the cause of the PFOS and PFOA problems and use of a fluorine material with low environmental load is provided. Also provided are a fluorine-containing surfactant and a composition thereof, an aqueous resin emulsion and a floor polish composition containing such surfactant. The fluorine-containing compound is represented by the following formula (1): Rf1—CpH2p—CH(OH)—CqH2q—NR—CrH2r—(O)n—SO3M (1) wherein Rf1 is a C1-6 perfluoroalkyl group, p, q, and r are independently an integer of 1 to 6, M is a cationic atom or atomic group, n is 0 or 1, R is hydrogen atom, a C1-12 alkyl group, or a group represented by the following formula (2): Rf2—CsH2s—CH(OH)—CtH2t— (2) wherein Rf2 is a C1-6 perfluoroalkyl group, and s and t are independently an integer of 1 to 6.
摘要翻译：提供了尽管不具有全氟烷基的链长为8或更大的全氟烷基，其具有优异的表面张力降低能力的含氟化合物，这是PFOS和PFOA问题的原因，以及使用环境负荷低的氟材料。还提供了含氟表面活性剂及其组合物，水性树脂乳液和含有这种表面活性剂的地板油漆组合物。含氟化合物由下式（1）表示：Rf1-CpH2p-CH（OH）-CqH2q-NR-CrH2r-（O）n-SO3M（1）其中Rf1为C1-6全氟烷基，p ，q和r分别为1〜6的整数，M为阳离子性原子或原子团，n为0或1，R为氢原子，碳原子数为1〜12的烷基或下述式 2）：Rf2-CsH2s-CH（OH）-CtH2t-（2）其中Rf2为C1-6全氟烷基，s和t独立地为1〜6的整数。

9. 发明授权

US6120571A Polishing agent for semiconductor and method for its production 失效
标题翻译：半导体抛光剂及其生产方法
公开(公告)号：US6120571A
公开(公告)日：2000-09-19
申请号：US61059
申请日：1998-04-16
申请人： Ryohei Aihara , Kazuaki Endoh , Katsuyuki Tsugita
发明人： Ryohei Aihara , Kazuaki Endoh , Katsuyuki Tsugita
IPC分类号： C09C1/68 , C09G1/02 , C09K3/14 , H01L21/3105
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..
摘要翻译：一种半导体用抛光剂，其包含重均粒径为0.1〜0.35μm，微晶尺寸为150〜600的氧化铈粒子。

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