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    • 1. 发明授权
    • Electric closing gear
    • 电动关闭装置
    • US06843647B2
    • 2005-01-18
    • US10239846
    • 2002-02-04
    • Saburo FujitaJunichi YamamotoTosimichi Sugita
    • Saburo FujitaJunichi YamamotoTosimichi Sugita
    • B29C45/17B29C45/66B29C45/68B29C45/64
    • B29C45/68B29C45/1761B29C2045/1788B29C2045/1792B29C2045/688
    • A mechanism for advancing and retreating a movable die plate toward and from a fixed die plate includes a moving base in which the upper surface thereof is connected integrally with the movable die plate and a slide unit is installed on the lower surface thereof. A pair of track rails are provided on the base and form a linear guide by engaging with the slide unit. A ball screw shaft is supported in parallel with the track rails by a bearing provided on the base and has an axial direction restrained rotatably. A servomotor drives the ball screw shaft and a ball screw nut is installed on the lower surface of the moving base to threadedly engage with the ball screw shaft, and the ball screw shaft and the ball screw nut are provided at an arbitrary position between the paired track rails for linear guidance.
    • 用于使活动模板向固定模板前后移动的机构包括:移动基座,其上表面与可动模板一体连接,滑动单元安装在其下表面。 一对轨道设置在基座上并通过与滑动单元接合而形成线性导轨。 滚珠丝杠轴通过设置在基座上的轴承与轨道轨道平行地支撑,并且具有可旋转地限制的轴向方向。 伺服电机驱动滚珠丝杠轴,滚珠丝杠螺母安装在移动基座的下表面上,与滚珠丝杠轴螺纹接合,滚珠丝杠轴和滚珠丝杠螺母位于配对之间的任意位置 轨道用于线性引导。
    • 4. 发明申请
    • Solid-state image sensing device and method for manufacturing the same
    • 固体摄像装置及其制造方法
    • US20060022230A1
    • 2006-02-02
    • US11155643
    • 2005-06-20
    • Junichi YamamotoYasutaka Nakashiba
    • Junichi YamamotoYasutaka Nakashiba
    • H01L21/00H01L31/062
    • H01L27/14689H01L27/14634H01L27/14806
    • In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. By forming the first N type semiconductor region and the N well in the same process, the number of manufacturing process for the solid-state image sensing device can be decreased. It is, therefore, possible to suppress excessive application of heat history to the solid-state image sensing device during ion implantation and diffusion of N type impurity. Accordingly, by suppressing excessive diffusion of impurity and the like resulting from the excessive application of the heat history to the solid-state image sensing device, yield of the solid-state image sensing device can be improved.
    • 在固态摄像装置中,以相同的工序形成PMOS区域的第一N型半导体区域和N阱,由此使PMOS区域中的第一N型半导体区域和N阱在N上基本相等 型杂质浓度 - 深度剖面。 通过在相同的工艺中形成第一N型半导体区域和N阱,可以减少固态图像感测装置的制造工艺的数量。 因此,可以在N型杂质的离子注入和扩散期间抑制对固态摄像装置的过热应用。 因此,通过抑制由于过度地将热历史应用于固体摄像装置而导致的杂质等的过度扩散,能够提高固体摄像装置的产量。
    • 5. 发明授权
    • Switching power supply unit with series connected converter circuits
    • 开关电源单元与串联转换器电路
    • US06650552B2
    • 2003-11-18
    • US10152788
    • 2002-05-23
    • Masakazu TakagiJunichi YamamotoKatsuhiko ShimizuToshiyuki Zaitsu
    • Masakazu TakagiJunichi YamamotoKatsuhiko ShimizuToshiyuki Zaitsu
    • H02M3335
    • H02M3/33592Y02B70/1475
    • A switching power supply unit of the present invention a timing generating circuit (121) which receives a first control signal formed by a rectifier-transistor driving circuit (104), forms a second control signal based on the first control signal, and supplies the second control signal to a control electrode of the rectifier transistor (113). The first control signal is synchronized with the switching operation of a half-bridge circuit (102), and the second control signal exceeds a threshold voltage of a rectifier transistor (113) at a timing substantially equal to the timing that one edge of the first control signal is generated and falls below the threshold voltage of the rectifier transistor (113) at a timing earlier by predetermined time than the timing that the other edge of the first control signal is generated.
    • 本发明的开关电源单元接收由整流晶体管驱动电路(104)形成的第一控制信号的定时发生电路(121),基于第一控制信号形成第二控制信号,并将第二控制信号 控制信号到整流器晶体管(113)的控制电极。第一控制信号与半桥电路(102)的开关操作同步,并且第二控制信号超过整流器晶体管(113)的阈值电压, 在与第一控制信号的一个边沿产生并且在比第一控制信号的另一个边沿的定时更早预定时间的时间点下降到整流器晶体管(113)的阈值电压的定时的时间上, 被生成。
    • 6. 发明授权
    • Epitaxial wafer for infrared light-emitting device and light-emitting device using the same
    • 用于红外发光装置的外延晶片和使用其的发光装置
    • US06388274B1
    • 2002-05-14
    • US09594735
    • 2000-06-16
    • Atsushi YoshinagaJunichi YamamotoAkihiro Kitazaki
    • Atsushi YoshinagaJunichi YamamotoAkihiro Kitazaki
    • H01L2715
    • H01L33/30H01L33/0079H01L33/305
    • The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type GaAlAs layer; a second n-type GaAlAs layer; an n-type GaAlAs cladding layer; a p-type GaAlAs active layer which has an emission wavelength of 850-900 nm; and a p-type GaAlAs cladding layer, through liquid phase epitaxy, and, subsequently, removing the n-type GaAs substrate. In the epitaxial wafer, the p-type GaAlAs cladding layer has a thickness of 5-30 &mgr;m; the p-type GaAlAs cladding layer has an oxygen concentration of 3×1016 atoms/cm3 or less; the p-type GaAlAs cladding layer has a carrier concentration of 1×1017 cm−3 to 1×1018 cm−3; the p-type GaAlAs active layer has a thickness of 0.05-0.4 &mgr;m; the peak carbon concentration of the portion in the second n-type GaAlAs layer within 2 &mgr;m of the interface between the second n-type GaAlAs layer and the first n-type GaAlAs layer is less than 1×1017 atoms/cm3; the p-type GaAlAs active layer contains germanium as a predominant dopant; the n-type GaAlAs cladding layer has a Ge concentration of 3×1016 atoms/cm3 or less; and the second n-type GaAlAs layer has a Ge concentration of 3×1016 atoms/cm3 or less. The invention provides an epitaxial wafer of double-hetero structure for producing high-intensity GaAlAs infrared LEDs.
    • 本发明提供了通过在n型GaAs衬底上依次形成第一n型GaAlAs层而获得的外延晶片; 第二n型GaAlAs层; n型GaAlAs覆层; 具有发射波长850-900nm的p型GaAlAs有源层; 和p型GaAlAs覆层,通过液相外延,随后除去n型GaAs衬底。 在外延晶片中,p型GaAlAs覆层的厚度为5-30μm; p型GaAlAs包层的氧浓度为3×1016原子/ cm3以下; p型GaAlAs覆层的载流子浓度为1×10 17 cm -3至1×10 18 cm -3; p型GaAlAs活性层的厚度为0.05-0.4μm; 在第二n型GaAlAs层和第一n型GaAlAs层之间的界面的2μm内的第二n型GaAlAs层中的部分的峰值碳浓度小于1×10 17原子/ cm 3; p型GaAlAs活性层含有锗作为主要掺杂剂; n型GaAlAs覆盖层的Ge浓度为3×1016原子/ cm3以下, 第二n型GaAlAs层的Ge浓度为3×1016原子/ cm3以下。 本发明提供了一种用于生产高强度GaAlAs红外LED的双异质结构的外延晶片。
    • 7. 发明授权
    • Epitaxial wafer for infrared light-emitting device and light-emitting device using the same
    • 用于红外发光装置的外延晶片和使用其的发光装置
    • US06348703B1
    • 2002-02-19
    • US09559263
    • 2000-04-27
    • Atsushi YoshinagaJunichi Yamamoto
    • Atsushi YoshinagaJunichi Yamamoto
    • H01L31072
    • H01L33/30H01L33/305Y10S438/93
    • The present invention provides an epitaxial wafer comprising, on a p-type GaAs single-crystal substrate, a first p-type layer; a p-type cladding layer; a p-type active layer; and an n-type cladding layer, wherein the n-type cladding layer has a carrier concentration of 1×1017 to 1×1018 cm−3; a sulfur concentration of 3×1016 atoms/cm3 or less; and a thickness of 20-50 &mgr;m. The maximum silicon concentration in the portion of the p-type cladding layer within 2 &mgr;m of the interface between the p-type cladding layer and the first p-type layer is less than 1×1018 atoms/cm3; the concentration of carbon, sulfur, or oxygen in the first p-type layer is less than 1×1017 atoms/cm3; the p-type cladding layer has a thickness of 50-80 &mgr;m; the first p-type layer has a carrier concentration of 3×1017 to 1×1018 cm−3; and the n-type cladding layer contains germanium at a concentration of 3×1018 cm−3 or less. Thus, there can be produced an epitaxial wafer for fabricating an infrared LED exhibiting high emitted-light intensity with small variation.
    • 本发明提供一种外延晶片,其在p型GaAs单晶衬底上包括第一p型层; p型覆层; p型活性层; n型包覆层,其中,所述n型包覆层的载流子浓度为1×10 17〜1×10 18 cm -3; 3×1016原子/ cm3以下的硫浓度; 厚度为20-50μm。 p型包覆层和第一p型层之间的界面的2μm内的p型包层的部分中的最大硅浓度小于1×1018原子/ cm3; 第一p型层中的碳,硫或氧的浓度小于1×10 17 atoms / cm 3; p型覆层的厚度为50〜80μm; 第一p型层的载流子浓度为3×10 17〜1×10 18 cm -3; n型包覆层含有浓度为3×10 18 cm -3以下的锗。 因此,可以制造用于制造具有较小变化的高发射光强度的红外LED的外延晶片。
    • 9. 发明授权
    • Thermal transfer printing apparatus
    • 热转印机
    • US4962387A
    • 1990-10-09
    • US355669
    • 1989-05-23
    • Junichi YamamotoYoshio TohyamaMasahiro Shiigi
    • Junichi YamamotoYoshio TohyamaMasahiro Shiigi
    • B41J2/325B41J17/28B41J35/18
    • B41J35/18B41J17/28B41J2/325
    • A multi-color thermal transfer printing apparatus having a platen roller rotatable in opposite directions with a recording medium driven to travel on the platen roller and a continuous length of carrier medium driven to travel in conjunction with the recording medium on the platen roller so that the carrier medium may be in contact with the recording medium, the carrier medium having a series of areas carrying differently colored inks. A thermal print head is movable between an inoperative position spaced apart from the platen roller and an operative position having the carrier medium pressed against the recording medium on the platen roller and operative to form an image on the recording medium by thermal transfer of an ink from one of the colored areas of the carrier medium to the recording medium. A guide member is movable between a first position close to the platen roller and a second position spaced from the platen roller, the guide member in the first position forming a passageway through which the recording medium is to be guided to travel along a predetermined path with respect to the platen roller. The guide member and the print head are together so that the guide member is moved to the first position in response to movement of the print head to the inoperative position and is moved to the second position in response to movement of the print head to the operative position.
    • 一种多色热转印打印设备,其具有可在相对方向上旋转的压纸滚筒,其中记录介质被驱动以在所述压纸辊上行进,并且连续长度的载体介质被驱动以与所述压纸辊上的所述记录介质一起行进, 载体介质可以与记录介质接触,载体介质具有携带不同颜色的油墨的一系列区域。 热打印头可以在与压纸辊间隔开的不工作位置和在压纸辊上压靠在记录介质上的载体介质的操作位置之间移动,并且可操作以通过从墨水的热转印来在记录介质上形成图像 载体介质到记录介质的着色区域之一。 引导构件可以在靠近压纸辊的第一位置和与压纸辊隔开的第二位置之间移动,引导构件在第一位置形成通道,记录介质将沿着预定路径被引导通过, 相对于压纸辊。 引导构件和打印头在一起,使得引导构件响应于打印头移动到非操作位置而移动到第一位置,并且响应于打印头到操作的移动而移动到第二位置 位置。