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1. 发明公开

US20230335972A1 SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE 审中-公开
公开(公告)号：US20230335972A1
公开(公告)日：2023-10-19
申请号：US18042617
申请日：2021-08-06
申请人： SONY GROUP CORPORATION
发明人： YUTA ISOZAKI , HIDEKAZU KAWANISHI , YUICHIRO KIKUCHI , YUKIO HOSHINA , HIDEKI WATANABE
IPC分类号： H01S5/024 , H01S5/22
CPC分类号： H01S5/02469 , H01S5/22
摘要： A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer; an active layer; and a second semiconductor layer stacked on the first semiconductor layer with the active layer interposed therebetween, and having a strip-shaped ridge, and a high-resistance region at a foot of the ridge. The semiconductor laser further includes an insulating layer formed so as to be in contact with both side surfaces of the ridge in a width direction of the ridge and to expose at least a portion of the high-resistance region, and an electrode layer in contact with an upper surface of the ridge, and in contact with all or a part of an exposed portion of the high-resistance region which is not covered with the insulating layer.

2. 发明申请

US20230111268A1 LASER ELEMENT 有权
公开(公告)号：US20230111268A1
公开(公告)日：2023-04-13
申请号：US17904805
申请日：2021-02-18
申请人： SONY GROUP CORPORATION
发明人： YUKIO HOSHINA , HIDEKI WATANABE
IPC分类号： H01S5/34 , H01S5/343
摘要： [Object] To provide a laser element capable of preventing laser characteristics from deteriorating while suppressing electron overflow and improving the yield at the time of production.
[Solving Means] A laser element according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and an electron barrier layer. The first semiconductor layer is formed of a group iii nitride semiconductor having a first conducive type. The second semiconductor layer is formed of a group iii nitride semiconductor having a second conductive type. The active layer is formed of a group iii nitride semiconductor and is provided between the first semiconductor layer and the second semiconductor layer. The electron barrier layer is provided between the active layer and the second semiconductor layer and is formed of a group iii nitride semiconductor having a composition ratio of Al larger than that of the second semiconductor layer, a recessed and projecting shape being formed on a surface of the electron barrier layer on a side of the second semiconductor layer, the recessed and projecting shape having a height difference between a projecting portion and a recessed portion in a direction perpendicular to a layer surface direction being 2 nm or more and less than 10 nm.

3. 发明公开

US20240022040A1 SURFACE EMITTING LASER AND SURFACE EMITTING LASER ARRAY 审中-公开
公开(公告)号：US20240022040A1
公开(公告)日：2024-01-18
申请号：US18249550
申请日：2021-10-20
申请人： SONY GROUP CORPORATION
发明人： RINTARO KODA , YASUTAKA HIGA , GO HIRANO , SHUHEI YAMAGUCHI , TATSUYA MATOU , HIDEKI WATANABE
IPC分类号： H01S5/02 , H01S5/42 , H01S5/183
CPC分类号： H01S5/0207 , H01S5/423 , H01S5/18305
摘要： A surface emitting laser according to one embodiment of the present disclosure includes: a substrate having a convex part provided on a surface thereof; and a vertical resonator structure formed on the substrate, and including an active layer, a first semiconductor layer, and a current blocking layer. The first semiconductor layer is a semiconductor layer of a first conductivity type having a step structure part having a shape conforming to the convex part at a location facing the convex part. The current blocking layer is a semiconductor layer of a second conductivity type different from the first conductivity type and having an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part.

4. 发明公开

US20240162686A1 SEMICONDUCTOR LASER 审中-公开
公开(公告)号：US20240162686A1
公开(公告)日：2024-05-16
申请号：US18550808
申请日：2022-01-14
申请人： SONY GROUP CORPORATION
发明人： YUICHIRO KIKUCHI , HIDEKAZU KAWANISHI , MAKOTO OOTA , HIDEKI WATANABE
IPC分类号： H01S5/323 , H01S5/042 , H01S5/22
CPC分类号： H01S5/323 , H01S5/04256 , H01S5/22
摘要： To provide a semiconductor laser capable of further improving reliability. Provided is a semiconductor laser including a substrate, a first cladding layer of a first conductivity type, an active layer, a second cladding layer of a second conductivity type, and a pad metal in this order, in which an upper portion of the pad metal on a side of the pad metal opposite to a side closer to the substrate and a side portion of the pad metal are covered with an insulating film and a barrier metal, and the barrier metal and a bonding metal are disposed in this order on the pad metal on the side of the pad metal opposite to the side closer to the substrate.

5. 发明公开

US20240128721A1 SURFACE EMITTING LASER 审中-公开
公开(公告)号：US20240128721A1
公开(公告)日：2024-04-18
申请号：US18264545
申请日：2022-01-19
申请人： SONY GROUP CORPORATION
发明人： SHUHEI YAMAGUCHI , HIDEKI WATANABE , RINTARO KODA
IPC分类号： H01S5/183
CPC分类号： H01S5/1833 , H01S5/18325 , H01S5/18347 , H01S5/18361
摘要： The present technology provides a surface emitting laser that can be manufactured with an excellent yield and has a configuration of confining a current and light. The present technology provides a surface emitting laser including a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures and including an active layer, in which a joint portion exists in at least one of inside the first structure, inside the second structure, inside the resonator, between the resonator and the first structure, or between the resonator and the second structure, and a first confinement portion that confines a current is provided in at least one of first or second constituent portion joined at the joint portion, and a second confinement portion that confines at least light of a current or light is provided in at least one of the first or second constituent portion.

6. 发明公开

US20230261438A1 SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE 审中-公开
公开(公告)号：US20230261438A1
公开(公告)日：2023-08-17
申请号：US18005089
申请日：2021-06-25
申请人： SONY GROUP CORPORATION
发明人： HIDEKI WATANABE , YUICHIRO KIKUCHI , SHINICHI AGATUMA , MAKOTO OOTA , TAKASHI MIZUNO , HIROYUKI MIYAHARA , EIJI NAKAYAMA
IPC分类号： H01S5/042 , H01S5/0237 , H01S5/22
CPC分类号： H01S5/04252 , H01S5/0237 , H01S5/22 , H01S5/343
摘要： A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer of a first conductivity type; an active layer; and a second semiconductor layer of a second conductivity type stacked on the first semiconductor layer with the active layer interposed therebetween, and provided with a strip-shaped ridge. The semiconductor laser further includes: a pair of resonator end faces facing each other across the ridge; and an electrode layer electrically coupled to an upper surface of the ridge.

7. 发明公开

US20230187897A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR LASER ELEMENT 审中-公开
公开(公告)号：US20230187897A1
公开(公告)日：2023-06-15
申请号：US17998359
申请日：2021-05-13
申请人： SONY GROUP CORPORATION
发明人： YUICHIRO KIKUCHI , YUKIO HOSHINA , HIDEKI WATANABE , YUTA ISOZAKI , HIDEKAZU KAWANISHI , MASAHIRO MURAYAMA , TAKASHI SUGIYAMA
IPC分类号： H01S5/02 , H01S5/343 , H01S5/22
CPC分类号： H01S5/0206 , H01S5/22 , H01S5/34333 , H01S5/34386 , H01S5/0234
摘要： [Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element.
[Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

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