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1. 发明公开

US20230187897A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR LASER ELEMENT 审中-公开
公开(公告)号：US20230187897A1
公开(公告)日：2023-06-15
申请号：US17998359
申请日：2021-05-13
申请人： SONY GROUP CORPORATION
发明人： YUICHIRO KIKUCHI , YUKIO HOSHINA , HIDEKI WATANABE , YUTA ISOZAKI , HIDEKAZU KAWANISHI , MASAHIRO MURAYAMA , TAKASHI SUGIYAMA
IPC分类号： H01S5/02 , H01S5/343 , H01S5/22
CPC分类号： H01S5/0206 , H01S5/22 , H01S5/34333 , H01S5/34386 , H01S5/0234
摘要： [Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element.
[Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

2. 发明公开

US20230335972A1 SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER DEVICE 审中-公开
公开(公告)号：US20230335972A1
公开(公告)日：2023-10-19
申请号：US18042617
申请日：2021-08-06
申请人： SONY GROUP CORPORATION
发明人： YUTA ISOZAKI , HIDEKAZU KAWANISHI , YUICHIRO KIKUCHI , YUKIO HOSHINA , HIDEKI WATANABE
IPC分类号： H01S5/024 , H01S5/22
CPC分类号： H01S5/02469 , H01S5/22
摘要： A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer; an active layer; and a second semiconductor layer stacked on the first semiconductor layer with the active layer interposed therebetween, and having a strip-shaped ridge, and a high-resistance region at a foot of the ridge. The semiconductor laser further includes an insulating layer formed so as to be in contact with both side surfaces of the ridge in a width direction of the ridge and to expose at least a portion of the high-resistance region, and an electrode layer in contact with an upper surface of the ridge, and in contact with all or a part of an exposed portion of the high-resistance region which is not covered with the insulating layer.

3. 发明申请

US20230111268A1 LASER ELEMENT 有权
公开(公告)号：US20230111268A1
公开(公告)日：2023-04-13
申请号：US17904805
申请日：2021-02-18
申请人： SONY GROUP CORPORATION
发明人： YUKIO HOSHINA , HIDEKI WATANABE
IPC分类号： H01S5/34 , H01S5/343
摘要： [Object] To provide a laser element capable of preventing laser characteristics from deteriorating while suppressing electron overflow and improving the yield at the time of production.
[Solving Means] A laser element according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and an electron barrier layer. The first semiconductor layer is formed of a group iii nitride semiconductor having a first conducive type. The second semiconductor layer is formed of a group iii nitride semiconductor having a second conductive type. The active layer is formed of a group iii nitride semiconductor and is provided between the first semiconductor layer and the second semiconductor layer. The electron barrier layer is provided between the active layer and the second semiconductor layer and is formed of a group iii nitride semiconductor having a composition ratio of Al larger than that of the second semiconductor layer, a recessed and projecting shape being formed on a surface of the electron barrier layer on a side of the second semiconductor layer, the recessed and projecting shape having a height difference between a projecting portion and a recessed portion in a direction perpendicular to a layer surface direction being 2 nm or more and less than 10 nm.

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