专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150293168A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150293168A1
公开(公告)日：2015-10-15
申请号：US14487903
申请日：2014-09-16
申请人： SK hynix Inc.
发明人： Tae-Sik YUN , Kang-Seol LEE
IPC分类号： G01R31/26 , H01L21/66 , H01L23/48
CPC分类号： H01L23/481 , G01R31/318513 , H01L22/22 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device may include: a plurality of output paths, which include a plurality of through silicon vias (TSVs), respectively, and suitable for transmission of test confirmation information; an information provider suitable for providing the test confirmation information to the plurality of TSVs; and an output controller suitable for selectively blocking one of the output paths including a failed one among the plurality of TSVs.
摘要翻译：半导体器件可以包括：多个输出路径，其分别包括多个穿通硅通孔（TSV），并且适于传输测试确认信息; 信息提供者，适于向多个TSV提供测试确认信息; 以及输出控制器，其适于选择性地阻挡所述多个TSV中的一个输出路径，包括故障的输出路径。

2. 发明申请

US20180090227A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF 审中-公开
公开(公告)号：US20180090227A1
公开(公告)日：2018-03-29
申请号：US15603537
申请日：2017-05-24
申请人： SK hynix Inc.
发明人： Dong-Beom LEE , Tae-Sik YUN
IPC分类号： G11C29/00 , G11C7/22 , G11C7/12 , G11C7/10 , G11C8/10
CPC分类号： G11C29/787 , G11C7/10 , G11C7/12 , G11C7/22 , G11C8/10
摘要： A semiconductor memory device includes: a memory array region including normal memory cells and redundant memory cells; a fuse circuit including fuse cells for programming repair addresses, outputting fuse data including the programmed repair addresses and fuse enable signals in response to a boot-up signal; a fuse information storage including N latch circuits for storing the fuse data, wherein each of the N latch circuits drives fuse lines assigned from N fuse lines based on the fuse enable signals and a comparison result of the corresponding repair addresses and an input address; and a repair control circuit generating a repair activation signal and an M-bit repair control signal based on signals of the N fuse lines, and outputting the M-bit repair control signal to multiple address lines by selectively mapping the M-bit repair control signal to some bits of the input address, based on the repair activation signal.

3. 发明申请

US20170069358A1 MEMORY DEVICE AND METHOD OF OPERATION THEREOF 审中-公开
标题翻译：存储器件及其操作方法
公开(公告)号：US20170069358A1
公开(公告)日：2017-03-09
申请号：US15046090
申请日：2016-02-17
申请人： SK hynix Inc.
发明人： Tae-Sik YUN , Jae-Jin LEE
IPC分类号： G11C7/06 , G11C7/12
CPC分类号： G11C29/50012 , G11C29/56012 , G11C2207/2272
摘要： An operation method of a memory device may include writing first data to a plurality of memory cells corresponding to a plurality of word lines, enabling a sense amplifier corresponding to the memory cells and setting second data in the sense amplifier, the second data having the opposite phase of the first data, and sequentially enabling the plurality of word lines for a predetermined time while enabling the sense amplifier.
摘要翻译：存储器件的操作方法可以包括将第一数据写入与多个字线相对应的多个存储器单元，使得能够读出对应于存储器单元的读出放大器并设置读出放大器中的第二数据，第二数据具有相反的第一数据的相位，并且在启用读出放大器的同时，使多个字线顺序启用预定时间。

4. 发明申请

US20160041872A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20160041872A1
公开(公告)日：2016-02-11
申请号：US14570851
申请日：2014-12-15
申请人： SK hynix Inc.
发明人： Young-Jun KU , Tae-Sik YUN
IPC分类号： G06F11/10 , G11C29/52
CPC分类号： G06F11/1052 , G11C2029/0411
摘要： A semiconductor memory device includes: a core block suitable for storing write data as normal data or a part of combined data according to a data masking signal, and masking information indicating data masking of the combined data; and an error correcting code (ECC) block suitable for performing an ECC decoding operation on the normal data, and bypassing the ECC decoding operation on the combined data according to the masking information, wherein the combined data further includes masked data.
摘要翻译：半导体存储器件包括：适合于根据数据屏蔽信号将写数据存储为正常数据或组合数据的一部分的核心块，以及指示组合数据的数据屏蔽的屏蔽信息; 以及适用于对正常数据执行ECC解码操作的纠错码（ECC）块，以及根据掩蔽信息绕过组合数据的ECC解码操作，其中组合数据还包括屏蔽数据。

5. 发明申请

US20150170722A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
标题翻译：半导体存储器件及其操作方法
公开(公告)号：US20150170722A1
公开(公告)日：2015-06-18
申请号：US14256688
申请日：2014-04-18
申请人： SK hynix Inc.
发明人： Tae-Sik YUN , Jae-Bum KO , Young-Jun KU
IPC分类号： G11C7/12 , G11C7/22
CPC分类号： G11C11/4094 , G11C7/1048 , G11C11/40615 , G11C11/4074 , G11C11/4091
摘要： A semiconductor memory device includes a first pre-charge control block suitable for generating a first control signal by counting a number of toggles of an operation clock in response to a first active pulse in a self-refresh operation exit mode, a second pre-charge control block suitable for generating a second control signal in response to an active command for an active operation in a self-refresh operation mode, and an operation control block suitable for disabling the first pre-charge control block in the self-refresh operation mode, and disabling the second pre-charge control block in a self-refresh operation exit mode, wherein a pre-charge operation starts in response to the first and second control signals after the active operation. The semiconductor memory device may then be secured in a minimal time for stably performing an active operation during a self-refresh operation.
摘要翻译：半导体存储器件包括第一预充电控制块，其适于通过对自刷新操作退出模式中的第一有效脉冲响应于操作时钟的切换次数来产生第一控制信号，第二预充电控制块响应于在自刷新操作模式中的有效操作的有效命令产生第二控制信号的控制块，以及适于在自刷新操作模式中禁用第一预充电控制块的操作控制块，以及在自刷新操作退出模式中禁用第二预充电控制块，其中响应于主动操作之后的第一和第二控制信号开始预充电操作。然后可以在最小时间内确保半导体存储器件，以在自刷新操作期间稳定地执行主动操作。

6. 发明申请

US20200185026A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF 审中-公开
公开(公告)号：US20200185026A1
公开(公告)日：2020-06-11
申请号：US16682696
申请日：2019-11-13
申请人： SK hynix Inc.
发明人： Tae-Sik YUN , Dae-Suk KIM , Seok-Cheol YOON , No-Guen JOO
IPC分类号： G11C11/406 , G11C11/4091 , G11C11/408 , G11C11/4076
摘要： A semiconductor memory device includes: a plurality of banks each including a plurality of cell mats and a plurality of sense amplifiers shared by adjacent cell mats; and a bank control circuit suitable for activating a normal word line of a particular cell mat of a bank selected according to a refresh command including bank information, and activating a target word line of a cell mat that does not share a sense amplifier with the particular cell mat according to a target refresh command after a preset delay time.

7. 发明申请

US20160180902A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20160180902A1
公开(公告)日：2016-06-23
申请号：US14713812
申请日：2015-05-15
申请人： SK hynix Inc.
发明人： Tae-Sik YUN
IPC分类号： G11C7/22 , G11C7/10 , G11C7/06
CPC分类号： G11C7/22 , G11C7/08 , G11C7/222 , G11C11/4076
摘要： A circuit of a semiconductor memory device may include a delay unit suitable for delaying a column pulse signal, and sequentially generating a first strobe source signal, a column source signal, and a second strobe source signal at a predetermined time interval, and an input/output strobe signal generation unit suitable for generating an input/output strobe signal which is activated during a period in which both of the first and second strobe source signals are activated.
摘要翻译：半导体存储器件的电路可以包括适于延迟列脉冲信号的延迟单元，并且以预定的时间间隔顺次产生第一选通源信号，列源信号和第二选通源信号，以及输入/ 输出选通信号生成单元，其适于产生在第一和第二选通源信号被激活的时段期间被激活的输入/输出选通信号。

8. 发明申请

US20160104546A1 REPAIR CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：维修电路和半导体存储器件，包括它们
公开(公告)号：US20160104546A1
公开(公告)日：2016-04-14
申请号：US14627875
申请日：2015-02-20
申请人： SK hynix Inc.
发明人： Tae-Sik YUN
IPC分类号： G11C29/00 , G11C29/04 , G11C8/10
CPC分类号： G11C29/781 , G11C8/10 , G11C29/04 , G11C29/24 , G11C29/44 , G11C29/50 , G11C2029/1802
摘要： A repair circuit includes a normal decoder suitable for decoding partial input addresses of input addresses in response to a first control signal, a comparison unit suitable for comparing the partial input addresses and partial repair addresses of repair addresses in response to a second control signal, and generating a column repair signal when the partial input addresses and the partial repair addresses correspond to each other, and a redundancy decoder suitable for decoding the repair addresses in response to the column repair signal.
摘要翻译：修复电路包括适合于响应于第一控制信号解码输入地址的部分输入地址的正常解码器，适于比较部分输入地址和响应于第二控制信号的修复地址的部分修复地址的比较单元，以及当部分输入地址和部分修复地址彼此对应时，产生列修复信号;以及冗余解码器，其适于响应于列修复信号解码修复地址。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式