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    • 3. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US08969901B2
    • 2015-03-03
    • US13896166
    • 2013-05-16
    • Samsung Electronics Co., Ltd.
    • Jin Young ChoiJae Ho HanKi Seok KimWan Ho LeeMyeong Ha KimHae Soo Ha
    • H01L33/00H01L33/40H01L33/14H01L33/42
    • H01L33/405H01L33/145H01L33/42
    • A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.
    • 发光器件包括第一半导体层,有源层和第二半导体层,以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分,透明电极层,反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上,并且具有包围反射焊盘部分的开口,使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸,并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。