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1. 发明授权

US08969901B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08969901B2
公开(公告)日：2015-03-03
申请号：US13896166
申请日：2013-05-16
申请人： Samsung Electronics Co., Ltd.
发明人： Jin Young Choi , Jae Ho Han , Ki Seok Kim , Wan Ho Lee , Myeong Ha Kim , Hae Soo Ha
IPC分类号： H01L33/00 , H01L33/40 , H01L33/14 , H01L33/42
CPC分类号： H01L33/405 , H01L33/145 , H01L33/42
摘要： A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.
摘要翻译：发光器件包括第一半导体层，有源层和第二半导体层，以及分别与第一和第二半导体层电连接的第一和第二电极。第二电极包括反射焊盘部分，透明电极层，反射指状部分和电极焊盘部分。反射焊盘部分设置在第二半导体层的上表面的区域中。透明电极层设置在第二半导体层上，并且具有包围反射焊盘部分的开口，使得透明电极层不与反射焊盘部分接触。反射指部从反射板部延伸，并且其至少一部分设置在透明电极层上。电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

2. 发明申请

US20140131759A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20140131759A1
公开(公告)日：2014-05-15
申请号：US14129524
申请日：2011-07-29
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jae Yoon Kim , Je Won Kim , Jin Bock Lee , Seok Min Hwang , Hae Soo Ha , Su Yeol Lee
IPC分类号： H01L33/38
CPC分类号： H01L33/387 , H01L33/20 , H01L33/382 , H01L2933/0016
摘要： A semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed in a first region corresponding to a partial region of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region different from the first region on the upper surface of the n-type semiconductor layer, and having an n-type pad and first and second n-type fingers, and a p-type electrode formed on the p-type semiconductor layer, and having a p-type pad and a p-type finger, wherein the n-type semiconductor layer, the active layer, and the p-type semiconductor layer form a light emitting structure, and a region in which the n-type and p-type fingers intersect to overlap with each other is formed.
摘要翻译：半导体发光器件包括形成在对应于n型半导体层的上表面的部分区域的第一区域中的n型半导体层，有源层和p型半导体层，n型电极形成在与n型半导体层的上表面上的第一区域不同的第二区域中，并且具有n型焊盘和第一和第n型指状物以及形成在p型上的p型电极半导体层，并且具有p型焊盘和p型指状物，其中所述n型半导体层，所述有源层和所述p型半导体层形成发光结构，以及其中所述n型半导体层，形成彼此重叠的类型和p型手指。

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