会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Semiconductor light projection apparatus and distance measurement apparatus
    • 半导体光投射装置和距离测量装置
    • US06654399B1
    • 2003-11-25
    • US09511778
    • 2000-02-23
    • Yuji KimuraKatsunori AbeKinya Atsumi
    • Yuji KimuraKatsunori AbeKinya Atsumi
    • H01S500
    • G01S17/936G01S7/4815G01S7/4817G01S7/484G01S17/42H01L2224/48091H01L2224/49111H01L2924/00014
    • In performing an light emitting operation using a plurality of semiconductor light-emitting devices, these semiconductor light-emitting devices are lighted up such that the driving current is lessened and the life time of the devices is prevented from being shortened and lights can be emitted to a remote site without reducing an amount of lights. Semiconductor laser devices 23a to 23c, which emit lights through independent lenses 25a to 25c, are connected in series to each other and connected to a signal generating circuit 24, serving as a power supply, so as to perform pulse lighting, whereby making it possible to light up three semiconductor laser devices simultaneously at a driving current corresponding to one semiconductor laser device. A package of semiconductor laser devices 23a to 23c comprises three lead terminals, and an electrical connection to two lead terminals, which are electrically insulated from a metallic base, is established. If a light collection point P is positioned in the midway of the detection distance range, the shifting quantity of the laser beams is minimized over substantially the entire area so that the amount of lights can be suppressed.
    • 在使用多个半导体发光器件进行发光操作时,这些半导体发光器件点亮,使得驱动电流减小,并且防止器件的寿命被缩短,并且可以将光发射到 远程站点,而不减少灯光量。 通过独立透镜25a至25c发光的半导体激光器件23a至23c彼此串联连接并连接到用作电源的信号发生电路24,从而使其成为可能 以对应于一个半导体激光器装置的驱动电流同时点亮三个半导体激光器件。 半导体激光器件23a至23c的封装包括三个引线端子,并且与两个引线端子的电连接,其与金属基底电绝缘。 如果光收集点P位于检测距离范围的中间,则激光束的移动量在整个面积上最小化,从而可以抑制光量。
    • 7. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US06333945B1
    • 2001-12-25
    • US09215259
    • 1998-12-18
    • Katsunori AbeKinya Atsumi
    • Katsunori AbeKinya Atsumi
    • H01S520
    • B82Y20/00H01S5/227H01S5/2275H01S5/3213H01S5/3432
    • An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.
    • 通过在其中注入驱动电流而产生激光的有源层夹在半导体层之间。 有源层具有多量子阱结构,并且位于有源层两侧的层由AlGaAs基材料制成。 通过适当地选择AlGa中的铝混合比,层的折射率相对于有源层设置为不对称。 由于在有源层中产生的光更多地分布在具有较高折射率的层中,所以光分布的峰值从有源层移动到具有较高折射率的层中。 因此,避免了对活性层的能量集中。 可以使具有较高折射率的层的厚度更厚以进一步增强从活性层的能量浓度偏移。