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1. 发明授权

US5827798A Method for production of superconducting polycrystalline wire rod 失效
标题翻译：超导多晶线材生产方法
公开(公告)号：US5827798A
公开(公告)日：1998-10-27
申请号：US873084
申请日：1997-06-11
申请人： Ichiro Matsubara , Ryoji Funahashi , Kazuo Ueno , Hiroshi Ishikawa
发明人： Ichiro Matsubara , Ryoji Funahashi , Kazuo Ueno , Hiroshi Ishikawa
IPC分类号： C01G1/00 , C01G29/00 , C04B35/45 , C30B29/22 , H01B12/00 , H01B12/04 , H01B13/00 , H01L39/24
CPC分类号： H01L39/248 , Y10S505/704 , Y10S505/729 , Y10S505/74
摘要： A method for the production of a superconducting polycrystalline wire rod having all the crystal (a, b, c) axes thereof aligned is disclosed, which consists of a step of arraying a plurality of superconducting whiskers of a composition of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 (Bi-2212 phase) in such a manner as to parallellize the fiber axes of the whiskers and then aligning all the crystal axes of the superconducting whiskers with parallellized fiber axes and a step of heat-treating the resultant whiskers.
摘要翻译：公开了一种制备其所有晶体（a，b，c）轴对准的超导多晶线材的方法，其包括将Bi2Sr2CaCu2O8（Bi-2212相）组成的多个超导晶须排列的步骤），使晶须的纤维轴平行化，然后将超导晶须的所有晶轴与平行纤维轴对准，并对所得到的晶须进行热处理的步骤。

2. 发明授权

US5999833A Method for production of superconducting oxide tape and superconducting oxide tape produced thereby 失效
标题翻译：由此制造超导氧化物带和超导氧化物带的方法
公开(公告)号：US5999833A
公开(公告)日：1999-12-07
申请号：US3460
申请日：1998-01-06
申请人： Ryoji Funahashi , Ichiro Matsubara , Kazuo Ueno , Hiroshi Ishikawa
发明人： Ryoji Funahashi , Ichiro Matsubara , Kazuo Ueno , Hiroshi Ishikawa
IPC分类号： C04B35/64 , C01G1/00 , C01G29/00 , H01B12/06 , H01B13/00 , H01L39/24 , H01L39/12
CPC分类号： H01L39/248 , Y10S428/93 , Y10S505/704
摘要： A method for the production of a superconducting oxide tape having a Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10 (Bi-2223) structure interposed between silver sheets, which method consists essentially of preparing a sandwich structure having interposed between silver sheets a molded layer of a superconducting oxide precursor powder consisting essentially of Bi, Pb, Sr, Ca, Cu, and O obtained from a raw material substance composed of, in atomic composition ratio, 1.00 of Bi, 0-0.2 of Pb, 0.9-1.1 of Sr, 0.9-1.1 of Ca and 1.3-1.7 of Cu, and O, heating the sandwich structure in an atmosphere consisting of oxygen and an inert gas, having an oxygen partial pressure in the range of 0-5%, and kept at a temperature in the range of 830-850.degree. C., thereby melting the molded layer, then causing the atmosphere to retain the heating temperature and meanwhile increasing the oxygen partial pressure, thereby inducing precipitation of crystal grains possessing a Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 (Bi-2212) structure and excelling in orientation, and subsequently maintaining the oxygen partial pressure and temperature at the time of precipitation of the crystal grains, thereby transforming the structure into the (Bi-2223) structure while retaining the particle diameter of the crystal grains and the state of orientation, and superconducting oxide tape produced by the method.
摘要翻译：一种用于生产具有介于银片之间的Bi2Sr2Ca2Cu3O10（Bi-2223）结构的超导氧化物带的方法，该方法主要包括制备夹层结构，该夹层结构介于银片之间，该层叠结构基本上由以下组成的超导氧化物前体粉末的模制层组成： Bi，Pb，Sr，Ca，Cu和O由原料组成比为1.00的Pb，0-0.2的Pb，0.9-1.1的Sr，0.9-1.1的Ca和1.3〜 1.7的Cu和O，在氧分压为0-5％的氧气和惰性气体的气氛中加热夹层结构，并保持在830-850℃的温度，从而熔化模制层，然后使气氛保持加热温度，同时增加氧分压，从而诱发具有Bi2Sr2CaCu2O8（Bi-2212）结构的晶粒沉淀，取向优良，随后保持晶粒沉淀时的氧分压和温度，从而将结构转变为（Bi-2223）结构，同时保持晶粒的粒径和取向状态，并制成超导氧化物带通过该方法。

3. 发明授权

US5846910A Method for production of B.sub.i -2212 superconducting tape material 失效
标题翻译： Bi-2212超导胶带材料的生产方法
公开(公告)号：US5846910A
公开(公告)日：1998-12-08
申请号：US873090
申请日：1997-06-11
申请人： Ryoji Funahashi , Ichiro Matsubara , Kazuo Ueno , Hiroshi Ishikawa
发明人： Ryoji Funahashi , Ichiro Matsubara , Kazuo Ueno , Hiroshi Ishikawa
IPC分类号： C04B35/45 , C01G1/00 , C01G29/00 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： H01L39/248 , Y10S505/733
摘要： This invention concerns a method for the production of an oxide superconducting tape material having a composition of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, which method consists essentially of forming a sandwich structure comprising a layer formed of a superconducting powder consisting essentially of Bi, Sr, Ca, Cu, and O and having an essential structure of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 and silver sheet layers, the superconducting powder layer being interposed between the silver sheet layers, heating the sandwich structure at a temperature in the range of 810.degree.-910.degree. C. in an atmosphere consisting of oxygen and an inert gas and having an oxygen partial pressure in the range of 0-90%, thereby melting the superconducting powder layer, and then elevating the oxygen partial pressure of the atmosphere while retaining the same heating temperature, thereby crystallizing the molten superconducting powder layer.
摘要翻译：本发明涉及一种制备具有Bi 2 Sr 2 CaCu 2 O 8组成的氧化物超导带材料的方法，该方法主要包括形成夹层结构，该夹层结构包括由基本上由Bi，Sr，Ca，Cu和O组成的超导粉末形成的层并且具有Bi2Sr2CaCu2O8和银片层的基本结构，超导粉末层插入在银层之间，在810-910℃的温度范围内，在由氧和惰性气体，氧分压在0〜90％的范围内，从而熔化超导粉末层，然后在保持相同的加热温度的同时提高大气的氧气分压，从而使熔融的超导粉末层结晶。

4. 发明授权

US06727424B2 Complex oxide having high thermoelectric conversion efficiency 失效
标题翻译：具有高热电转换效率的复合氧化物
公开(公告)号：US06727424B2
公开(公告)日：2004-04-27
申请号：US10364807
申请日：2003-02-11
申请人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
发明人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
IPC分类号： H01L3500
CPC分类号： H01L35/18 , C03C3/122 , C03C3/15 , C03C4/14 , C03C10/00 , H01L35/14
摘要： This invention provides a complex oxide comprising the features of : (i) being represented by the formula:(A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.
摘要翻译：本发明提供一种复合氧化物，其包含以下特征：（i）由下式表示：（A0.4B0.1M0.1）x / 0.6Co2Oy其中A和B是彼此不同的元素，各自表示Ca，Sr或 Ba，M表示Bi，Sc，Y，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Yb或Lu，1.7 <= x <= 2和3.8 < = 5，（ii）在100K（绝对温度）以上的温度下具有100kV / K以上的塞贝克系数和（iii）在100K的温度下具有10mOmegacm以下的电阻率（绝对值）温度）以上。本发明的复合氧化物是由大量存在的低毒元素组成的材料，该材料具有优异的耐热性和化学耐久性，并且在600K以上的温度范围内具有较高的热电转换效率，其温度范围的余热。

5. 发明授权

US06544444B2 Complex oxide having high thermoelectric conversion efficiency 失效
标题翻译：具有高热电转换效率的复合氧化物
公开(公告)号：US06544444B2
公开(公告)日：2003-04-08
申请号：US09741607
申请日：2000-12-19
申请人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
发明人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
IPC分类号： H01B108
CPC分类号： H01L35/18 , C03C3/122 , C03C3/15 , C03C4/14 , C03C10/00 , H01L35/14
摘要： This invention provides a complex oxide comprising the features of: (i) being represented by the formula: (A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.
摘要翻译：本发明提供一种复合氧化物，其包含以下特征：（i）由下式表示：（A0.4B0.1M0.1）x / 0.6Co2Oy其中A和B是彼此不同的元素，各自表示Ca，Sr或 Ba，M表示Bi，Sc，Y，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Yb或Lu，1.7 <= x <= 2，3.8 < = 5，（ii）在100K（绝对温度）以上的温度下具有100kV / K以上的塞贝克系数和（iii）在100K的温度下具有10mOMEGAcm以下的电阻率（绝对值）温度）以上。本发明的复合氧化物是由大量存在的低毒元素组成的材料，该材料具有优异的耐热性和化学耐久性，并且在600K以上的温度范围内具有较高的热电转换效率，其温度范围的余热。

6. 发明授权

US06860938B2 Method for producing single crystal of composite oxide 失效
标题翻译：复合氧化物单晶的制备方法
公开(公告)号：US06860938B2
公开(公告)日：2005-03-01
申请号：US10481702
申请日：2002-05-27
申请人： Ryoji Funahashi , Ichiro Matsubara , Masahiro Shikano
发明人： Ryoji Funahashi , Ichiro Matsubara , Masahiro Shikano
IPC分类号： C30B1/02 , C30B1/04
CPC分类号： C30B1/02 , C30B29/22 , C30B29/62
摘要： The present invention provides a method by which an oxide material having excellent thermoelectric conversion performance can be produced by a simple process. Specifically, the present invention provides a method for producing a composite oxide single crystal in which a mixture of raw substances including a Bi-containing substance, a Sr-containing substance, a Ca-containing substance, a Co-containing substance and a Te-containing substance, or a mixture of raw substances also including a Pb-containing substance in addition to the above-mentioned substances, is heated in an oxygen-containing atmosphere at a temperature below the melting point of any of the raw substances. The composite oxide single crystal produced by the method of the present invention is a ribbon-shaped fibrous single crystal that is about 10 to 10,000 μm long, about 20 to 200 μm wide, and about 1 to 5 μm thick. According to the method of the present invention, a composite oxide single crystal with excellent thermoelectric conversion performance can be produced simply by heating a mixture of raw substances at a relatively low temperature, below the melting point of any of the raw substances, meaning that a relatively easy and safe heat treatment operation can be performed, which contributes to cost reduction.
摘要翻译：本发明提供一种通过简单的方法可以生产具有优异的热电转换性能的氧化物材料的方法。具体而言，本发明提供一种复合氧化物单晶的制造方法，其中，含有Bi的物质，含Sr物质，含Ca物质，含Co物质和Te- 除了上述物质之外还含有含Pb物质的含有物质或原料的混合物在含氧气氛中在低于任何原料的熔点的温度下加热。通过本发明的方法制备的复合氧化物单晶是长度约10至10,000μm，宽度约20至200μm，厚度约1至5μm的带状纤维状单晶。根据本发明的方法，可以简单地通过在低于任何原料的熔点的较低温度下加热原料混合物来产生具有优异热电转换性能的复合氧化物单晶，这意味着a 可以进行相对容易且安全的热处理操作，这有助于降低成本。

7. 发明授权

US06376763B2 Complex oxide having high seebeck coefficient and high electric conductivity 有权
标题翻译：具有高Seebeck系数和高导电性的复合氧化物
公开(公告)号：US06376763B2
公开(公告)日：2002-04-23
申请号：US09733799
申请日：2000-12-08
申请人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
发明人： Ryoji Funahashi , Ichiro Matsubara , Satoshi Sodeoka
IPC分类号： H01L3534
CPC分类号： C01G51/68 , C01P2002/34 , C01P2002/54 , C01P2002/72 , C01P2002/88 , C01P2006/32 , C01P2006/40 , H01B1/08 , H01L35/20 , H01L35/22
摘要： This invention provides a complex oxide comprising the features of: (i) being represented by the formula: Ca3-xRExCo4Oy wherein RE is a rare earth element, 0≦x≦0.5 and 8.5≦y≦10, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 300° C. or higher, and (iii) having an electric conductivity of 103 S/m or more at a temperature of 300° C. or higher. The complex oxide is composed of low-toxicity elements, excellent in heat resistance and chemical durability and high in thermoelectric conversion efficiency.
摘要翻译：本发明提供一种复合氧化物，其包括以下特征：（i）由下式表示：Ca 3-x R Ex Co 4 O y其中RE为稀土元素，0≤x≤0.5且8.5≤y≤10，（ii）在300℃以上的温度下具有100μV/ K以上的塞贝克系数，（iii）在300℃以上的温度下具有103S / m以上的电导率。复合氧化物由低毒元素组成，耐热性和化学耐久性优异，热电转换效率高。

8. 发明授权

US07282384B2 Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
标题翻译：热电转换材料薄膜，传感器装置及其制造方法
公开(公告)号：US07282384B2
公开(公告)日：2007-10-16
申请号：US10532825
申请日：2003-11-11
申请人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
发明人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
IPC分类号： H01L21/203 , H01L35/34
CPC分类号： H01L35/22 , G01N27/16
摘要： The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要翻译：本发明提供一种SiGe系薄膜，该薄膜的制造方法以及该薄膜的应用。本发明涉及通过溅射制造SiGe系半导体薄膜，作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法，局部温差成为电信号，其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法，其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜，其作为热电转换材料成分的一部分，该热电转换材料成分是其信号源是温差的传感器装置的组成元件，并将局部温差转换成电信号，通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

9. 发明申请

US20060063291A1 Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
标题翻译：热电转换材料薄膜，传感器装置及其制造方法
公开(公告)号：US20060063291A1
公开(公告)日：2006-03-23
申请号：US10532825
申请日：2003-11-11
申请人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
发明人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
IPC分类号： H01L21/363 , H01L29/12
CPC分类号： H01L35/22 , G01N27/16
摘要： The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要翻译：本发明提供一种SiGe系薄膜，该薄膜的制造方法以及该薄膜的应用。本发明涉及通过溅射制造SiGe系半导体薄膜，作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法，局部温差成为电信号，其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法，其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜，其作为热电转换材料成分的一部分，该热电转换材料成分是其信号源是温差的传感器装置的组成元件，并将局部温度差转换成电信号，通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

10. 发明申请

US20060057292A1 Process for producing oxygen partial pressure detecting part of resistance oxygen sensor 审中-公开
标题翻译：电阻氧传感器氧分压检测部分生产工艺
公开(公告)号：US20060057292A1
公开(公告)日：2006-03-16
申请号：US10540873
申请日：2003-12-22
申请人： Noriya Izu , Woosuck Shin , Ichiro Matsubara , Norimitsu Murayama , Yukihiko Yamauchi , Shuzo Kanzaki
发明人： Noriya Izu , Woosuck Shin , Ichiro Matsubara , Norimitsu Murayama , Yukihiko Yamauchi , Shuzo Kanzaki
IPC分类号： B05D3/02 , C08J7/04
CPC分类号： G01N27/125
摘要： The present invention provides a method of manufacturing a porous thick film of an oxide that has extremely few cracks and can be satisfactorily used as an oxygen partial pressure detecting part of an oxygen sensor. The present invention relates to a method of manufacturing such a porous thick film as an oxygen partial pressure detecting part of a resistive oxygen sensor comprising taking a fine particle powder of an oxide containing cerium oxide as a raw material powder, preparing a paste containing the oxide, printing the paste onto a substrate by screen printing, calcining and sintering, the method comprising a step of carrying out heat treatment to effect particle growth from the average particle diameter of the raw material powder to a particle diameter less than the average particle diameter of the ultimately obtained thick film, a step of mixing the particle growth-effected powder with a solvent, a step of dispersing agglomerated particles in the solvent, a step of removing a precipitate, a step of evaporating off the solvent, and a step of mixing the resulting oxide with an organic binder to obtain the paste.
摘要翻译：本发明提供一种制造氧化物的多孔厚膜的方法，其具有极少的裂纹，可以令人满意地用作氧传感器的氧分压检测部。本发明涉及一种电阻式氧传感器的氧分压检测部分的多孔厚膜的制造方法，其特征在于，将含有氧化铈的氧化物的微粒粉末作为原料粉末，制备含有氧化物通过丝网印刷，煅烧和烧结将糊料印刷在基材上，该方法包括进行热处理以使颗粒生长从原料粉末的平均粒径到小于平均粒径的粒径的步骤最终获得的厚膜，将颗粒生长粉末与溶剂混合的步骤，将附聚颗粒分散在溶剂中的步骤，除去沉淀物的步骤，蒸发溶剂的步骤和混合步骤得到的氧化物与有机粘合剂得到糊状物。

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