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1. 发明申请

US20070212263A1 Micro Thermoelectric Type Gas Sensor 审中-公开
标题翻译：微型热电式气体传感器
公开(公告)号：US20070212263A1
公开(公告)日：2007-09-13
申请号：US10593255
申请日：2005-03-16
申请人： Woosuck Shin , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama , Kazuki Tajima , Fabin Qiu , Zhihui Zhao
发明人： Woosuck Shin , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama , Kazuki Tajima , Fabin Qiu , Zhihui Zhao
IPC分类号： G01N27/16
CPC分类号： G01N27/16
摘要： The present invention provides a micro thermoelectric gas sensor having a thermoelectric conversion section, a microheater, a catalyst layer formed on the microheater and to be heated by the microheater, which acts as a catalyst for catalytic combustion of a combustible gas, and a sensor detection section with an electrode pattern therefore formed on a membrane of a predetermined thickness, and a method for forming a micropattern of a functional material of a catalyst or resistor in a predetermined position on a substrate in a state in which the microstructure of the functional material remains controlled.
摘要翻译：本发明提供一种具有热电转换部，微加热器，形成在微加热器上并被微加热器加热的催化剂层的微型热电气体传感器，其作为可燃气体的催化燃烧用催化剂，以及传感器检测由此形成在预定厚度的膜上的电极图案的方法，以及在功能材料的微观结构保留的状态下在基板上的预定位置形成催化剂或电阻器的功能材料的微图案的方法受控。

2. 发明授权

US07282384B2 Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
标题翻译：热电转换材料薄膜，传感器装置及其制造方法
公开(公告)号：US07282384B2
公开(公告)日：2007-10-16
申请号：US10532825
申请日：2003-11-11
申请人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
发明人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
IPC分类号： H01L21/203 , H01L35/34
CPC分类号： H01L35/22 , G01N27/16
摘要： The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要翻译：本发明提供一种SiGe系薄膜，该薄膜的制造方法以及该薄膜的应用。本发明涉及通过溅射制造SiGe系半导体薄膜，作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法，局部温差成为电信号，其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法，其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜，其作为热电转换材料成分的一部分，该热电转换材料成分是其信号源是温差的传感器装置的组成元件，并将局部温差转换成电信号，通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

3. 发明申请

US20060063291A1 Thermoelectric transducing material thin film, sensor device, and its manufacturing method 有权
标题翻译：热电转换材料薄膜，传感器装置及其制造方法
公开(公告)号：US20060063291A1
公开(公告)日：2006-03-23
申请号：US10532825
申请日：2003-11-11
申请人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
发明人： Woosuck Shin , Fabin Qiu , Noriya Izu , Ichiro Matsubara , Norimitsu Murayama
IPC分类号： H01L21/363 , H01L29/12
CPC分类号： H01L35/22 , G01N27/16
摘要： The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
摘要翻译：本发明提供一种SiGe系薄膜，该薄膜的制造方法以及该薄膜的应用。本发明涉及通过溅射制造SiGe系半导体薄膜，作为其信号源为温度差的传感器装置的构成元件的热电转换材料部件的部件的制造方法，局部温差成为电信号，其中通过在溅射蒸发之后热处理SiGe基半导体薄膜材料来制造SiGe基薄膜; 涉及上述形成薄膜的方法，其中在通过溅射蒸发形成SiGe基半导体薄膜时衬底温度和/或等离子体输出升高以形成具有更高结晶结构的薄膜; 涉及通过上述方法制造的基于SiGe的薄膜，其作为热电转换材料成分的一部分，该热电转换材料成分是其信号源是温差的传感器装置的组成元件，并将局部温度差转换成电信号，通过热处理赋予了良好的热电特性; 以及包含作为构成元素的上述SiGe系薄膜的气体传感器装置。

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