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1. 发明授权

US4296386A Semiconductor injection laser having a movable laser beam 失效
标题翻译：具有可动激光束的半导体注入激光器
公开(公告)号：US4296386A
公开(公告)日：1981-10-20
申请号：US6606
申请日：1979-01-26
申请人： Rudolf P. Tijburg , Peter J. de Waard , Teunis van Dongen
发明人： Rudolf P. Tijburg , Peter J. de Waard , Teunis van Dongen
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/20 , H01S3/19
CPC分类号： H01S5/20 , H01S5/0425 , H01L2924/0002 , H01S5/06243 , H01S5/2059
摘要： A semiconductor injection laser includes two contact regions on two oppositely-located major surfaces of the semiconductor body. One of these contact regions is divided into two sub-contact regions which are separated by a gap, and the active zone of the laser can be moved in a direction transverse to that of the laser beam by controlling the current distribution between the two sub-contact regions in order to move the laser beam.
摘要翻译：半导体注入激光器包括在半导体本体的两个相对位于主表面上的两个接触区域。这些接触区域中的一个被分成由间隙分开的两个子接触区域，并且通过控制两个子触点之间的电流分布，激光器的有源区域可以在横向于激光束横截面的方向上移动，接触区域以移动激光束。

2. 发明授权

US4222791A Method of making heterojunction devices by accurate control of gold pattern mask and proton bombardment 失效
标题翻译：通过精确控制金图案掩模和质子轰击制造异质结器件的方法
公开(公告)号：US4222791A
公开(公告)日：1980-09-16
申请号：US969611
申请日：1978-12-14
申请人： Rudolf P. Tijburg , Teunis Van Dongen
发明人： Rudolf P. Tijburg , Teunis Van Dongen
IPC分类号： H01L21/302 , H01L21/033 , H01L21/265 , H01L21/266 , H01L21/3065 , H01S5/00 , H01S5/20 , H01S3/00 , H01L21/225 , H01S3/18
CPC分类号： H01L21/263 , H01L21/0332 , H01L21/2654 , H01L21/266 , H01S5/20 , H01S5/2059 , Y10S438/945
摘要： A method of manufacturing a device in which a surface of a body is provided with a gold layer masking against a proton bombardment, in which the gold pattern is formed by means of a photoetching process, the gold pattern is removed after the subsequent proton bombardment of the body. The masking gold layer is obtained by providing on the body a quantity of gold simultaneously with a quantity of an addition which is small as compared with the quantity of gold.
摘要翻译：一种制造器件的方法，其中身体的表面设置有掩蔽抗质子轰击的金层，其中通过光刻工艺形成金图案，在随后的质子轰击之后去除金图案身体。掩蔽金层是通过在金体上同时提供与金量相比较小量的添加量来获得的。

3. 发明授权

US4145262A Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method 失效
标题翻译：根据该方法制造的半导体器件和半导体器件的制造方法
公开(公告)号：US4145262A
公开(公告)日：1979-03-20
申请号：US887647
申请日：1978-03-17
申请人： Rudolf P. Tijburg , Teunis VAN Dongen
发明人： Rudolf P. Tijburg , Teunis VAN Dongen
IPC分类号： H01L21/316 , H01S5/028 , H01S5/22 , C25D9/00 , C25D9/06 , C25D11/32
CPC分类号： H01L21/02233 , H01L21/02258 , H01L21/31679 , H01S5/028 , H01S5/22
摘要： A method of manufacturing a semiconductor device for generating laser beams is disclosed in which the mirror faces of the device are subjected to an oxidation treatment which includes an electrolytic oxidation step.

4. 发明授权

US4131525A Method of manufacturing a body having a gold pattern and body manufactured according to the method 失效
标题翻译：根据该方法制造具有金图案和主体的主体的制造方法
公开(公告)号：US4131525A
公开(公告)日：1978-12-26
申请号：US828480
申请日：1977-08-29
申请人： Rudolf P. Tijburg , Teunis VAN Dongen
发明人： Rudolf P. Tijburg , Teunis VAN Dongen
IPC分类号： H05K3/07 , C23F1/00 , C25F3/14 , H01L21/28 , H01L21/306 , H01L21/768 , H01L29/41
CPC分类号： H01L29/41 , C25F3/14 , H01L21/28 , H01L21/76885 , H01L2924/0002
摘要： The invention relates to a method of manufacturing a body having a gold pattern in which an etchant-resistant and electrically insulating masking layer is provided locally on the surface of a gold layer present on the body and parts of the surface of the gold layer not covered by the masking layer are subjected to a chemical etching treatment in an etching bath in which the gold pattern is formed. According to the invention, the gold layer during the chemical etching treatment is given a potential with respect to an electrode in the etching bath and this potential is adjusted to a value such that the etch rate is maintained at a rate no higher than the rate of the chemical etching treatment.
摘要翻译：本发明涉及一种制造具有金图案的本体的方法，其中在本体上存在的金层的表面上局部提供耐蚀刻和电绝缘的掩模层，并且金层的未被覆盖的部分表面通过掩模层在其中形成有金图案的蚀刻槽中进行化学蚀刻处理。根据本发明，化学蚀刻处理期间的金层相对于蚀刻槽中的电极具有电位，并且将该电位调整为使得蚀刻速率保持在不高于化学蚀刻处理。

5. 发明授权

US4341010A Fabrication of electroluminescent semiconductor device utilizing selective etching and epitaxial deposition 失效
标题翻译：利用选择性蚀刻和外延沉积制造电致发光半导体器件
公开(公告)号：US4341010A
公开(公告)日：1982-07-27
申请号：US141511
申请日：1980-04-18
申请人： Rudolf P. Tijburg , Teunis van Dongen
发明人： Rudolf P. Tijburg , Teunis van Dongen
IPC分类号： H01L21/205 , H01L21/306 , H01L33/00 , H01L33/44 , H01S5/00 , H01S5/026 , H01L21/308 , H01L21/20
CPC分类号： H01L33/44 , H01L33/0025 , Y10S438/978
摘要： An electroluminescent semiconductor device such as a semiconductor laser has epitaxial monocrystalline layers (3 to 6), including an active layer (4), grown on a substrate (2). The epitaxial layers are etched in the presence of an etching mask (8) to form nonplanar mirror surfaces (9) which in the longitudinal direction bound active regions (10). To form flat and parallel mirrors (12) an epitaxial monocrystalline protective layer (11) is grown from the gaseous phase on the mirror surfaces after etching. The etching can be carried out in two stages using different etchants. With the first etchant the etched layers taken on a swallow-tail profile and then with the second etchant they take on a concave profile.
摘要翻译：诸如半导体激光器的电致发光半导体器件具有在衬底（2）上生长的包括活性层（4）的外延单晶层（3至6）。在存在蚀刻掩模（8）的情况下蚀刻外延层，以形成在纵向方向上结合有源区域（10）的非平面镜面（9）。为了形成平坦和平行的反射镜（12），在蚀刻之后，从镜面上的气相生长外延单晶保护层（11）。蚀刻可以使用不同的蚀刻剂在两个阶段中进行。使用第一蚀刻剂，将蚀刻层置于燕尾型材上，然后用第二蚀刻剂将其取为凹形轮廓。

6. 发明授权

US4985370A Method of manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US4985370A
公开(公告)日：1991-01-15
申请号：US452876
申请日：1989-12-13
申请人： Johannes J. Ponjee , Rudolf P. Tijburg
发明人： Johannes J. Ponjee , Rudolf P. Tijburg
IPC分类号： H01L21/312 , H01L33/44 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/028
CPC分类号： H01L33/44 , H01S5/028 , H01S5/0283 , Y10S148/095 , Y10S148/125
摘要： The invention relates a method of manufacturing a semiconductor laser device having a coating on surfaces of a semiconductor body intended for emanation of a laser beam.

7. 发明授权

US5969419A Structure comprising platinum layer bound to a surface of a silicon oxide layer 失效
标题翻译：包含与氧化硅层的表面结合的铂层的结构
公开(公告)号：US5969419A
公开(公告)日：1999-10-19
申请号：US302574
申请日：1994-09-08
申请人： Rudolf P. Tijburg , Karel M. Van Der Waarde
发明人： Rudolf P. Tijburg , Karel M. Van Der Waarde
IPC分类号： H01L21/28 , C23C14/02 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L29/45 , H01L33/14 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L33/40 , C23C14/02 , H01L21/32051 , H01L29/45 , H01L29/452 , H01S5/0425 , H01L33/145 , H01L33/30
摘要： By treating the silicon-oxide insulating layer of a semiconductor device with an aqueous metal-salt solution of a metal of an ion radius of less than 0.110 nm, for example, Sc, La or Zr, before a platinum electrode layer is provided on the insulating layer, the platinum layer shows excellent adhesive properties.
摘要翻译：通过在金属离子半径小于0.110nm的金属盐溶液例如Sc，La或Zr处理半导体器件的氧化硅绝缘层，在铂电极层设置在绝缘层，铂层显示出优异的粘合性能。

8. 发明授权

US4670966A Method of making a semiconductor laser with end zones for reducing non-radiating recombination 失效
标题翻译：制造具有用于减少非辐射复合的端部区域的半导体激光器的方法
公开(公告)号：US4670966A
公开(公告)日：1987-06-09
申请号：US779172
申请日：1985-09-23
申请人： Johannes A. De Poorter , Peter J. De Waard , Rudolf P. Tijburg , Gerardus L. Dinghs
发明人： Johannes A. De Poorter , Peter J. De Waard , Rudolf P. Tijburg , Gerardus L. Dinghs
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/22 , H01L21/263 , H01L21/78
CPC分类号： H01S5/20 , H01S5/162 , H01S5/2059 , H01S5/2202
摘要： A semiconductor laser having mirror faces serving as resonators, in which the active laser region (2) includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces so that mirror erosion is avoided.The invention relates to a method in which the end zones are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves which do not extend up to the active layer, in which grooves the end zones are provided via an ion bombardment through the active layer.

9. 发明授权

US5468683A Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces 失效
标题翻译：制造在非平行表面之间具有单根线的光电子半导体器件的方法
公开(公告)号：US5468683A
公开(公告)日：1995-11-21
申请号：US125375
申请日：1993-09-22
申请人： Hermanus A. Van De Pas , Rudolf P. Tijburg , Johannes A. De Poorter
发明人： Hermanus A. Van De Pas , Rudolf P. Tijburg , Johannes A. De Poorter
IPC分类号： B21J5/12 , B21K25/00 , F16C17/08 , H01L33/62 , H01S5/02 , H01S5/022 , H01L21/60
CPC分类号： H01L33/62 , B21J5/12 , B21K25/00 , F16C17/08 , H01L24/85 , H01L2224/45144 , H01L2224/48137 , H01L2224/4823 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L24/45 , H01L2924/00014 , H01L2924/01014 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01S5/02236 , H01S5/02276 , Y10S228/904
摘要： Optoelectronic devices often comprise an optoelectronic semiconductor element such as a diode laser fastened on a carrier. The desired path of a beam of radiation from or to such an element often implies that such an element has to be fastened on the carrier at a certain, for example right angle. As a result, a contact surface of such an element also encloses an angle with another contact surface which lies on the carrier. In a method according to the invention, one of the two contact surfaces is provided with a wire which has a free end, and after fastening of the diode laser or photodiode the free end of the wire is fastened on the other contact surface. One wire connection can suffice and no auxiliary block is necessary with this wire connection method in two steps. Preferably, the wire having the free end is provided on the element. This has various additional advantages such as a less critical fastening of the free end of the wire and the possibility of a reliable intermediate test owing to which the yield of the expensive end product is increased.
摘要翻译：光电器件通常包括光电半导体元件，例如固定在载体上的二极管激光器。来自或来自这种元件的辐射束的期望路径通常意味着这种元件必须以一定的例如直角紧固在载体上。结果，这种元件的接触表面也与位于载体上的另一个接触表面包围一个角度。在根据本发明的方法中，两个接触表面中的一个设置有具有自由端的导线，并且在紧固二极管激光器或光电二极管之后，线的自由端紧固在另一个接触表面上。一条电线连接可以满足，并且在两个步骤中不需要辅助电阻。优选地，具有自由端的线设置在元件上。这具有各种附加的优点，例如线的自由端的紧密紧固以及可靠的中间测试的可能性，由此可以提高昂贵的最终产品的产量。

10. 发明授权

US5756403A Method of preferentially etching a semiconductor substrate with respect to epitaxial layers 失效
标题翻译：相对于外延层优先蚀刻半导体衬底的方法
公开(公告)号：US5756403A
公开(公告)日：1998-05-26
申请号：US581233
申请日：1995-12-29
申请人： Rudolf P. Tijburg , Sharon J. Flamholtz , Kevin W. Haberern
发明人： Rudolf P. Tijburg , Sharon J. Flamholtz , Kevin W. Haberern
IPC分类号： C23F1/14 , H01L21/306 , H01L21/308 , H01L21/473 , H01L21/302
CPC分类号： H01L21/30612 , H01L21/473
摘要： An etching composition and method for its use in etching a semiconductor structure, the semiconductor structure comprising a substrate and one or more epitaxial layers. The etching composition comprises a solvent, an etchant, and first and second complexing agents, the etchant and complexing agents being soluble in the solvent. The etchant preferentially etches the substrate with respect to at least one epitaxial layer. The first complexing agent is reactive with the substrate so as to accelerate the rate at which the etchant etches the substrate. The second completing agent is reactive with a component of the at least one epitaxial layer so as to form a resulting compound with the component. This reaction establishes an equilibrium between the resulting compound, the second complexing agent and the component, the equilibrium precluding significant etching of the at least one epitaxial layer. The etching composition preferably comprises an agent which provides for adjusting the acidity of the solution, and thereby provides for adjusting the etch rate of the substrate while maintaining the composition's etching characteristics with respect to the at least one epitaxial layer.
摘要翻译：一种用于蚀刻半导体结构的蚀刻组合物和方法，所述半导体结构包括衬底和一个或多个外延层。蚀刻组合物包括溶剂，蚀刻剂和第一和第二络合剂，蚀刻剂和络合剂可溶于溶剂中。蚀刻剂相对于至少一个外延层优先蚀刻衬底。第一络合剂与衬底反应，以加速蚀刻剂蚀刻衬底的速率。第二完成剂与至少一个外延层的组分反应，以便与组分形成所得化合物。该反应在所得化合物，第二络合剂和组分之间建立平衡，排除了至少一个外延层的显着蚀刻的平衡。蚀刻组合物优选包含提供溶液酸度的调节剂，从而提供调整衬底的蚀刻速率，同时保持组合物相对于至少一个外延层的蚀刻特性。

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