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1. 发明申请

US20060255373A1 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure 有权
标题翻译：包括高掺杂导电沟道区的半导体结构和用于制造半导体结构的方法
公开(公告)号：US20060255373A1
公开(公告)日：2006-11-16
申请号：US10549784
申请日：2003-03-19
申请人： Rudolf Elpelt , Heinz Mitlehner , Reinhold Schorner
发明人： Rudolf Elpelt , Heinz Mitlehner , Reinhold Schorner
IPC分类号： H01L29/80
CPC分类号： H01L29/1608 , H01L29/0634 , H01L29/1025 , H01L29/1029 , H01L29/1033 , H01L29/66053 , H01L29/66068 , H01L29/7392 , H01L29/7722 , H01L29/7828 , H01L29/8083 , H01L29/8122
摘要： The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).
摘要翻译：本发明涉及一种用于控制电流（I）的半导体结构，包括第一n导电半导体区域（2），在第一半导体区域（2）内延伸的电流路径和沟道区域（22）。沟道区域（22）形成第一半导体区域（2）的一部分并且包括基极掺杂。通道区域（22）中的电流（I）可以通过至少一个耗尽区（23,24）的影响。沟道区（22）包含用于传导电流的n导电沟道区（225），所述后区具有比基底掺杂更高的掺杂水平。导电沟道区域（225）通过离子注入在围绕沟道区域（22）的外延层（262）中产生。

2. 发明申请

US20050062112A1 Semiconductor structure with a switch element and an edge element 有权
标题翻译：具有开关元件和边缘元件的半导体结构
公开(公告)号：US20050062112A1
公开(公告)日：2005-03-24
申请号：US10950027
申请日：2004-09-24
申请人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schorner
发明人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schorner
IPC分类号： H01L21/337 , H01L21/8232 , H01L27/06 , H01L27/095 , H01L29/06 , H01L29/808 , H01L29/76
CPC分类号： H01L29/0619 , H01L29/8083
摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要翻译：用于控制和切换电流的半导体结构具有开关元件和边缘元件。开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上边缘区域。

3. 发明申请

US20090068803A1 METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS 有权
标题翻译：用于制造集成电路的方法，包括垂直接点场效应晶体管
公开(公告)号：US20090068803A1
公开(公告)日：2009-03-12
申请号：US11852853
申请日：2007-09-10
申请人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
发明人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
IPC分类号： H01L21/337
CPC分类号： H01L29/8083 , H01L29/0692 , H01L29/1066 , H01L29/1608 , H01L29/41766 , H01L29/6606 , H01L29/66909
摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要翻译：公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

4. 发明授权

US07071503B2 Semiconductor structure with a switch element and an edge element 有权
标题翻译：具有开关元件和边缘元件的半导体结构
公开(公告)号：US07071503B2
公开(公告)日：2006-07-04
申请号：US10950027
申请日：2004-09-24
申请人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schörner
发明人： Karl Dohnke , Rudolf Elpelt , Peter Friedrichs , Heinz Mitlehner , Reinhold Schörner
IPC分类号： H01L29/80
CPC分类号： H01L29/0619 , H01L29/8083
摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.
摘要翻译：用于控制和切换电流的半导体结构具有开关元件和边缘元件。开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上边缘区域。

5. 发明授权

US07763506B2 Method for making an integrated circuit including vertical junction field effect transistors 有权
标题翻译：制造包括垂直结型场效应晶体管的集成电路的方法
公开(公告)号：US07763506B2
公开(公告)日：2010-07-27
申请号：US11852853
申请日：2007-09-10
申请人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
发明人： Michael Treu , Roland Rupp , Heinz Mitlehner , Rudolf Elpelt , Peter Friedrichs , Larissa Wehrhahn-Kilian
IPC分类号： H01L21/337
CPC分类号： H01L29/8083 , H01L29/0692 , H01L29/1066 , H01L29/1608 , H01L29/41766 , H01L29/6606 , H01L29/66909
摘要： A method for making an integrated circuit including vertical junction field effect transistors is disclosed. One embodiment creates a vertical junction field effect transistor using a fault-tolerant or alignment-tolerant production process. The device performance is not harmed, even if misalignments in consecutive semiconductor processing steps occur.
摘要翻译：公开了一种制造包括垂直结型场效应晶体管的集成电路的方法。一个实施例使用容错或对准容限的制造工艺创建垂直结型场效应晶体管。即使在连续的半导体处理步骤中发生未对准，器件性能也不会受到损害。

6. 发明授权

US07615802B2 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure 有权
标题翻译：包括高掺杂导电沟道区的半导体结构和用于制造半导体结构的方法
公开(公告)号：US07615802B2
公开(公告)日：2009-11-10
申请号：US10549784
申请日：2003-03-19
申请人： Rudolf Elpelt , Heinz Mitlehner , Reinhold Schörner
发明人： Rudolf Elpelt , Heinz Mitlehner , Reinhold Schörner
IPC分类号： H01L29/80 , H01L21/00
CPC分类号： H01L29/1608 , H01L29/0634 , H01L29/1025 , H01L29/1029 , H01L29/1033 , H01L29/66053 , H01L29/66068 , H01L29/7392 , H01L29/7722 , H01L29/7828 , H01L29/8083 , H01L29/8122
摘要： The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).
摘要翻译：本发明涉及一种用于控制电流（I）的半导体结构，包括第一n导电半导体区域（2），在第一半导体区域（2）内延伸的电流路径和沟道区域（22）。沟道区域（22）形成第一半导体区域（2）的一部分并且包括基极掺杂。通道区域（22）中的电流（I）可以通过至少一个耗尽区（23,24）的影响。沟道区（22）包含用于传导电流的n导电沟道区（225），所述后区具有比基底掺杂更高的掺杂水平。导电沟道区域（225）通过离子注入在围绕沟道区域（22）的外延层（262）中产生。

7. 发明授权

US08994078B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08994078B2
公开(公告)日：2015-03-31
申请号：US13537180
申请日：2012-06-29
申请人： Daniel Kueck , Rudolf Elpelt
发明人： Daniel Kueck , Rudolf Elpelt
IPC分类号： H01L29/10 , H01L29/40 , H01L29/808 , H01L29/812 , H01L29/06 , H01L29/16
CPC分类号： H01L27/0629 , H01L29/0615 , H01L29/0646 , H01L29/0649 , H01L29/1608 , H01L29/407 , H01L29/41741 , H01L29/41775 , H01L29/42316 , H01L29/8083 , H01L29/8122 , H01L29/8613
摘要： A semiconductor device includes a cell region and a contact region, the cell region including a functional unit including a gate electrode, a source and a drain electrode, and the contact region including a gate pad. The gate electrode, the gate pad and the source electrode are disposed on a first main surface of a semiconductor substrate, and the drain electrode is disposed on a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface. A shielding member is disposed between the gate pad and the drain electrode, the shielding member being electrically connected to the source electrode.
摘要翻译：半导体器件包括单元区域和接触区域，单元区域包括包括栅电极，源极和漏极的功能单元，以及包括栅极焊盘的接触区域。栅电极，栅极焊盘和源电极设置在半导体衬底的第一主表面上，漏电极设置在半导体衬底的第二主表面上，第二主表面与第一主表面相对。屏蔽部件设置在栅焊盘和漏电极之间，屏蔽部件与源电极电连接。

8. 发明申请

US20090078971A1 SEMICONDUCTOR DEVICE WITH STRUCTURED CURRENT SPREAD REGION AND METHOD 有权
标题翻译：具有结构化电流传播区域和方法的半导体器件
公开(公告)号：US20090078971A1
公开(公告)日：2009-03-26
申请号：US11858264
申请日：2007-09-20
申请人： Michael Treu , Roland Rupp , Rudolf Elpelt
发明人： Michael Treu , Roland Rupp , Rudolf Elpelt
IPC分类号： H01L29/78 , H01L21/336 , H01L29/808 , H01L21/337
CPC分类号： H01L29/7395 , H01L29/0696 , H01L29/0843 , H01L29/1608 , H01L29/2003 , H01L29/66909 , H01L29/8083
摘要： A semiconductor device with structured current spread region and method is disclosed. One embodiment provides a drift portion of a first conductivity type, a current spread portion of the first conductivity type and first portions of the first conductivity type. The current spread portion and the first portions are arranged in a first plane on the drift portion, wherein the current spread portion surrounds at least partially the first portions. The semiconductor body further includes spaced apart body regions of a second conductivity type which are arranged on the current spread portion. Further, the doping concentration of the current spread portion is higher than the doping concentrations of the drift portion and of the first portions.
摘要翻译：公开了一种具有结构化电流扩展区域和方法的半导体器件。一个实施例提供第一导电类型的漂移部分，第一导电类型的电流扩展部分和第一导电类型的第一部分。电流扩展部分和第一部分布置在漂移部分上的第一平面中，其中电流扩展部分至少部分地围绕第一部分。半导体本体还包括布置在电流扩展部分上的间隔开的第二导电类型的主体区域。此外，电流扩展部分的掺杂浓度高于漂移部分和第一部分的掺杂浓度。

9. 发明授权

US08772140B2 Production method for a unipolar semiconductor component and semiconductor device 有权
标题翻译：单极半导体元件和半导体器件的制造方法
公开(公告)号：US08772140B2
公开(公告)日：2014-07-08
申请号：US13383593
申请日：2010-07-12
申请人： Rudolf Elpelt , Peter Friedrichs
发明人： Rudolf Elpelt , Peter Friedrichs
IPC分类号： H01L21/00 , H01L29/15
CPC分类号： H01L29/7802 , H01L21/02529 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/0843 , H01L29/0878 , H01L29/1608 , H01L29/2003 , H01L29/36 , H01L29/66068 , H01L29/7813 , H01L29/8083 , H01L29/872
摘要： A unipolar semiconductor component having a drift layer is produced by forming the drift layer with a continuously decreasing concentration of a charge carrier doping along the growth direction of the drift layer by way of epitaxial precipitation of the material of the drift layer, which comprises at least one wide band gap material. By using silicon carbide for the drift layer formed by the epitaxial precipitation, a subsequent change of the continuously decreasing concentration of the charge carrier doping due to a diffusion of the dopant atoms in downstream processes is suppressed. The production method can be used in particular to implement a unipolar semiconductor component comprising a drift layer, which component has an advantageous ratio of a comparatively high reverse bias voltage with relatively low forward losses, in a simple and/or cost-effective manner. The unipolar semiconductor component can be an active or passive semiconductor component.
摘要翻译：具有漂移层的单极半导体部件通过以漂移层的材料的外延沉淀形成漂移层，沿着漂移层的生长方向掺杂电荷载流子的浓度不断降低而形成，该漂移层至少包括一个宽带隙材料。通过使用碳化硅作为通过外延沉淀形成的漂移层，由于掺杂剂原子在下游工艺中的扩散而导致的电荷载流子掺杂的连续降低浓度的随后变化被抑制。该制造方法特别可以以简单和/或成本有效的方式实现包括漂移层的单极半导体元件，该元件具有相对较高的反向偏置电压和相对低的正向损耗的有利比率。单极半导体元件可以是有源或无源半导体元件。

10. 发明申请

US20100264467A1 TRANSISTOR COMPONENT HAVING A SHIELDING STRUCTURE 有权
标题翻译：具有屏蔽结构的晶体管元件
公开(公告)号：US20100264467A1
公开(公告)日：2010-10-21
申请号：US12426008
申请日：2009-04-17
申请人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
发明人： Dethard Peters , Peter Friedrichs , Rudolf Elpelt , Larissa Wehrhahn-Kilian , Michael Treu , Roland Rupp
IPC分类号： H01L29/812
CPC分类号： H01L29/8083 , H01L29/0657 , H01L29/1066 , H01L29/8122
摘要： A transistor component having a shielding structure. One embodiment provides a source terminal, a drain terminal and control terminal. A source zone of a first conductivity type is connected to the source terminal. A drain zone of the first conductivity type is connected to the drain terminal. A drift zone is arranged between the source zone and the drain zone. A junction control structure is provided for controlling a junction zone in the drift zone between the drain zone and the source zone, at least including one control zone. A shielding structure is arranged in the drift zone between the junction control structure and the drain zone and at least includes a shielding zone of a second conductivity type being complementarily to the first conductivity type. The shielding zone is connected to a terminal for a shielding potential. The at least one control zone and the at least one shielding zone have different geometries or different orientations in a plain that is perpendicular to a current flow direction of the component.
摘要翻译：具有屏蔽结构的晶体管组件。一个实施例提供了源极端子，漏极端子和控制端子。第一导电类型的源极区域连接到源极端子。第一导电类型的漏极区域连接到漏极端子。漂移区设置在源区和排水区之间。提供了结点控制结构，用于控制在漏区和源区之间的漂移区中的接合区，至少包括一个控制区。屏蔽结构布置在结点控制结构和漏区之间的漂移区中，并且至少包括与第一导电类型互补的第二导电类型的屏蔽区。屏蔽区域与屏蔽电位端子相连。所述至少一个控制区域和所述至少一个屏蔽区域在垂直于所述部件的当前流动方向的平原中具有不同的几何形状或不同取向。

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