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1. 外观设计

USD682503S1 Drum pallet 有权
标题翻译：鼓盘
公开(公告)号：USD682503S1
公开(公告)日：2013-05-14
申请号：US29424705
申请日：2012-06-14
申请人： Roy Lee Fehrman, Jr. , David Paul Jones
设计人： Roy Lee Fehrman, Jr. , David Paul Jones
CPC分类号： B65D19/004 , B65D71/70 , B65D2519/00034 , B65D2519/00069 , B65D2519/00268 , B65D2519/00288 , B65D2519/00318 , B65D2519/00338 , B65D2519/00815 , B65D2519/0094 , B65D2519/00965

2. 发明申请

US20100251940A1 Drum Pallet 审中-公开
标题翻译：鼓盘
公开(公告)号：US20100251940A1
公开(公告)日：2010-10-07
申请号：US12753224
申请日：2010-04-02
申请人： David Paul Jones , Roy Lee Fehrman, JR.
发明人： David Paul Jones , Roy Lee Fehrman, JR.
IPC分类号： B65D19/38 , B65D19/04
CPC分类号： B65D19/004 , B65D71/70 , B65D2519/00034 , B65D2519/00069 , B65D2519/00268 , B65D2519/00288 , B65D2519/00318 , B65D2519/00338 , B65D2519/00815 , B65D2519/0094 , B65D2519/00965
摘要： A one-piece pallet for securing and stacking drums thereon may include a tray having downwardly and inwardly tapering peripheral side walls, a top surface having a plurality of raised support surfaces, each shaped to engage a bottom of a container, a plurality of raised dividers, each of said dividers being positioned between adjacent support surfaces and being shaped to engage a side wall of a drum resting on said adjacent support surfaces. The side walls may have outer raised ribs terminating adjacent one of the support surfaces and shaped to engage a side wall of a drum resting on said adjacent one of said support surfaces. The dividers may include inner raised ribs having terminal portions opposite the terminal portions of the outer raised ribs such that a drum resting on any one of said support surfaces is constrained by the terminal portions of the inner and outer raised ribs from lateral movement relative to the tray. Support pedestals extend from a bottom surface of the tray, and the pedestals each include an arcuate groove shaped to engage an upper periphery of a drum that may facilitate stacking of the pallet.
摘要翻译：用于在其上固定和堆叠鼓的一体式托盘可以包括具有向下且向内渐缩的周边侧壁的托盘，顶表面具有多个凸起的支撑表面，每个凸起的支撑表面成形为接合容器的底部，多个升高的分隔件每个所述分隔件定位在相邻的支撑表面之间并且成形为接合放置在所述相邻支撑表面上的鼓的侧壁。所述侧壁可以具有与所述支撑表面中的一个相邻的外部凸起肋，并且成形为接合在所述相邻的一个所述支撑表面上的鼓的侧壁。分隔件可以包括内部凸起凸起，其具有与外部凸起肋的末端部分相对的端部部分，使得搁置在任何一个所述支撑表面上的滚筒被内部和外部凸起的肋的端部部分相对于相对于托盘。支撑座从托盘的底部表面延伸，并且基座各自包括弓形凹槽，该弓形凹槽成形为接合滚筒的上周边，其可以有利于托盘的堆叠。

3. 发明授权

US08844516B2 Heating apparatus using solar energy and method of heating using solar energy 有权
标题翻译：使用太阳能的加热装置和使用太阳能加热的方法
公开(公告)号：US08844516B2
公开(公告)日：2014-09-30
申请号：US13144998
申请日：2010-01-25
申请人： David Paul Jones , Reginald Geraint Brown
发明人： David Paul Jones , Reginald Geraint Brown
IPC分类号： F24J2/42 , F24D11/00 , F24D11/02 , F24D5/12 , F24D5/00
CPC分类号： F24D11/0264 , F24D5/005 , F24D5/12 , F24D11/007 , F24D11/009 , F24D11/0285 , F24D2200/12 , F24D2200/14 , Y02B10/20 , Y02B10/70 , Y02B30/12 , Y02B30/125 , Y02B30/52
摘要： This relates to a heating device including a solar energy collector, the solar energy collector transferring collected solar energy to outside air. First collector panels are used to heat outside air which heated air is led to a heater, for example a space heater. Second collector panels are used to transfer solar energy to air led to a heat exchanger of a heat pump. The heat pump transfers the extracted heat to heat storage. The stored heat is added to the air coming from the first collector panels if the temperature of the air coming from the first collector panels is below a predetermined temperature.
摘要翻译：这涉及一种包括太阳能收集器的加热装置，太阳能收集器将收集的太阳能转移到外部空气。第一收集器板用于加热外部空气，将加热的空气引导到加热器，例如空间加热器。第二个收集器板用于将太阳能转移到导致热泵热交换器的空气中。热泵将提取的热量转移到储热。如果来自第一收集器板的空气的温度低于预定温度，则将储存的热量添加到来自第一收集器板的空气中。

4. 发明授权

US08791525B2 Power semiconductor device including a double metal contact 有权
标题翻译：功率半导体器件包括双金属触点
公开(公告)号：US08791525B2
公开(公告)日：2014-07-29
申请号：US12036718
申请日：2008-02-25
申请人： Robert Montgomery , Hugo Burke , Philip Parsonage , Susan Johns , David Paul Jones
发明人： Robert Montgomery , Hugo Burke , Philip Parsonage , Susan Johns , David Paul Jones
IPC分类号： H01L29/76
CPC分类号： H01L24/11 , H01L21/56 , H01L24/02 , H01L24/10 , H01L24/13 , H01L29/41775 , H01L29/66734 , H01L29/78 , H01L29/7811 , H01L29/7813 , H01L2224/0401 , H01L2224/11019 , H01L2224/11466 , H01L2224/11831 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/05494 , H01L2924/13091 , H01L2924/00
摘要： A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.
摘要翻译：一种功率半导体器件及其制造方法，其包括在其有源区上的薄金属层和厚金属层的堆叠。

5. 发明授权

US07456470B2 Top drain fet with integrated body short 有权
标题翻译：顶部排水胎，整体身体短
公开(公告)号：US07456470B2
公开(公告)日：2008-11-25
申请号：US11238207
申请日：2005-09-29
申请人： David Paul Jones
发明人： David Paul Jones
IPC分类号： H01L27/108
CPC分类号： H01L29/781 , H01L29/417 , H01L29/41741 , H01L29/42368 , H01L29/66734
摘要： A top drain MOSgated device has its drain on the top of semiconductor die and its source on the bottom of the die substrate. Parallel spaced trenches extend from the die top surface through a drift region, a channel region and terminate on the substrate region. The bottoms of each trench receive a silicide conductor to short the substrate source to channel regions. The silicide conductors are then insulated at their top surfaces and gate electrodes are placed in the same trenches as those receiving the channel/source short.
摘要翻译：顶漏MOS器件的漏极位于半导体管芯的顶部，其源极在管芯基板的底部。平行隔开的沟槽从模具顶表面延伸穿过漂移区域，沟道区域并终止在衬底区域上。每个沟槽的底部接收硅化物导体以将衬底源短路至沟道区。然后，硅化物导体在其顶表面处被绝缘，并且栅电极被放置在与接收沟道/源短的沟槽相同的沟槽中。

6. 发明授权

US07238985B2 Trench type mosgated device with strained layer on trench sidewall 有权
标题翻译：在沟槽侧壁上具有应变层的沟槽型mosgated器件
公开(公告)号：US07238985B2
公开(公告)日：2007-07-03
申请号：US10911170
申请日：2004-08-04
申请人： David Paul Jones , Robert P. Haase
发明人： David Paul Jones , Robert P. Haase
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , H01L31/117
CPC分类号： H01L29/66431 , H01L29/1054 , H01L29/165 , H01L29/41766 , H01L29/66666 , H01L29/7781 , H01L29/7788 , H01L29/7789 , H01L29/7827
摘要： A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.
摘要翻译： MOS沟槽器件通过在沟槽的硅表面上形成小于约13nm厚的应变SiGe层，并且在SiGe层上形成薄（30nm或更小）的外延沉积硅的薄层，其外延层被转换成栅极氧化物层。由SiGe层形成的导电通道永久地应变以增加其迁移率，特别是空穴迁移率。

7. 发明授权

US08860194B2 Buck converter power package 有权
标题翻译：降压转换器电源封装
公开(公告)号：US08860194B2
公开(公告)日：2014-10-14
申请号：US13666854
申请日：2012-11-01
申请人： Ling Ma , Andrew N. Sawle , David Paul Jones , Timothy D. Henson , Niraj Ranjan , Vijay Viswanathan , Omar Hassen
发明人： Ling Ma , Andrew N. Sawle , David Paul Jones , Timothy D. Henson , Niraj Ranjan , Vijay Viswanathan , Omar Hassen
IPC分类号： H01L23/495
CPC分类号： H01L25/18 , H01L25/072 , H01L2224/16225 , H01L2224/73253 , H01L2924/13091 , H01L2924/16251 , H02M3/1588 , Y02B70/1466 , H01L2924/00
摘要： One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.
摘要翻译：一个示例性的公开的实施例包括包括垂直导通控制晶体管和垂直导通同步晶体管的半导体封装。垂直传导控制晶体管可以包括控制源，控制栅极和控制漏极，其都可从底表面接近，从而使电和直接表面安装到支撑表面。垂直导通同步晶体管可以包括顶表面上的同步漏极，其可以连接到耦合到支撑表面的导电夹子。导电夹子也可以热耦合到控制晶体管。因此，晶体管的所有端子容易通过支撑表面接近，并且诸如降压转换器电源相的功率电路可以通过支撑表面的迹线来实现。可选地，驱动器IC可以集成到封装中，并且散热器可以附接到导电夹子。

8. 发明授权

US07691708B2 Trench type MOSgated device with strained layer on trench sidewall 有权
标题翻译：沟槽型MOS器件，在沟槽侧壁上具有应变层
公开(公告)号：US07691708B2
公开(公告)日：2010-04-06
申请号：US11804184
申请日：2007-05-17
申请人： David Paul Jones , Robert P. Haase
发明人： David Paul Jones , Robert P. Haase
IPC分类号： H01L21/336
CPC分类号： H01L29/66431 , H01L29/1054 , H01L29/165 , H01L29/41766 , H01L29/66666 , H01L29/7781 , H01L29/7788 , H01L29/7789 , H01L29/7827
摘要： A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.
摘要翻译： MOS沟槽器件通过在沟槽的硅表面上形成小于约13nm厚的应变SiGe层，并且在SiGe层上形成薄（30nm或更小）的外延沉积硅的薄层，其外延层被转换成栅极氧化物层。由SiGe层形成的导电通道永久地应变以增加其迁移率，特别是空穴迁移率。

9. 发明授权

US07465986B2 Power semiconductor device including insulated source electrodes inside trenches 有权
标题翻译：功率半导体器件包括沟槽内的绝缘源电极
公开(公告)号：US07465986B2
公开(公告)日：2008-12-16
申请号：US11211268
申请日：2005-08-25
申请人： Dev Alok Girdhar , Ling Ma , Steven T. Peake , David Paul Jones
发明人： Dev Alok Girdhar , Ling Ma , Steven T. Peake , David Paul Jones
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/7805 , H01L29/7806 , H01L29/861
摘要： A power semiconductor device includes a plurality of trenches formed within a semiconductor body, each trench including one or more electrodes formed therein. In particular, according to embodiments of the invention, the plurality of trenches of a semiconductor device may include one or more gate electrodes, may include one or more gate electrodes or one or more source electrodes, or may include a combination of both gate and source electrodes formed therein. The trenches and electrodes may have varying depths within the semiconductor body.
摘要翻译：功率半导体器件包括形成在半导体本体内的多个沟槽，每个沟槽包括形成在其中的一个或多个电极。具体地，根据本发明的实施例，半导体器件的多个沟槽可以包括一个或多个栅电极，可以包括一个或多个栅电极或一个或多个源电极，或者可以包括栅极和源极的组合电极形成在其中。沟槽和电极在半导体本体内可能具有不同的深度。

10. 发明授权

US07439580B2 Top drain MOSgated device and process of manufacture therefor 有权
标题翻译：顶漏MOS器件及其制造工艺
公开(公告)号：US07439580B2
公开(公告)日：2008-10-21
申请号：US11217870
申请日：2005-09-01
申请人： Daniel M. Kinzer , David Paul Jones , Kyle Spring
发明人： Daniel M. Kinzer , David Paul Jones , Kyle Spring
IPC分类号： H01L29/94 , H01L29/76
CPC分类号： H01L29/781 , H01L29/66734
摘要： A trench type top drain MOSgated device has a drain electrode on the die top and a source electrode on the die bottom surface. The device is turned on by a control voltage connected between a drain and a gate region. The device cell has a body short trench and a gate trench. Gate poly is disposed in the bottom of the gate trench and is disposed adjacent a thin gate oxide lining a channel region with minimum overlap of the drain drift region. The bottom of the body short trench contains a contact which shorts the body region to the channel region. The body short, top drain region and gate polysilicon are simultaneously silicided. The gate trench is widened at its top to improve Qgd characteristics. Both the body short trench and gate trench are simultaneously filled with gap fill material.
摘要翻译：沟槽型顶漏MOS器件在管芯顶部具有漏极电极，在管芯底表面上具有源电极。该器件通过连接在漏极和栅极区域之间的控制电压而导通。器件单元具有主体短沟槽和栅极沟槽。栅极多晶硅设置在栅极沟槽的底部，并且与漏极漂移区域的重叠最小重叠的沟道区域邻近设置在薄栅极氧化物附近。身体短沟槽的底部包含一个将身体区域缩短到通道区域的接触件。主体短路，顶漏区和栅极多晶硅同时被硅化。栅极沟槽在其顶部被加宽以改善Q特性。主体短沟槽和栅极沟槽都同时填充间隙填充材料。

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