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1. 发明申请

US20050142291A1 Chemical vapor deposition methods 审中-公开
标题翻译：化学气相沉积法
公开(公告)号：US20050142291A1
公开(公告)日：2005-06-30
申请号：US11062571
申请日：2005-02-22
申请人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
发明人： Ross Dando , Philip Campbell , Craig Carpenter , Allen Mardian
IPC分类号： C23C16/44 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line, and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译：化学气相沉积室具有从其延伸的真空排气管。在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。真空排气管线的至少一部分与沉积室隔离。在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。在所述流动之后，真空排气管线的部分和沉积室彼此流体连通地设置，并且在有效地将流出物产物沉积在沉积物的内壁上的条件下，在沉积室内的第二多个基板上沉积材料真空排气管。

2. 发明申请

US20060027326A1 Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure 审中-公开
标题翻译：半导体衬底处理室和衬底转移室界面结构
公开(公告)号：US20060027326A1
公开(公告)日：2006-02-09
申请号：US11208964
申请日：2005-08-22
申请人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
发明人： Craig Carpenter , Ross Dando , Allen Mardian , Kevin Hamer , Raynald Cantin , Philip Campbell , Kimberly Tschepen , Randy Mercil
IPC分类号： C23F1/00
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

3. 发明申请

US20050241581A1 Chemical vapor deposition apparatuses and deposition methods 审中-公开
标题翻译：化学气相沉积装置和沉积方法
公开(公告)号：US20050241581A1
公开(公告)日：2005-11-03
申请号：US11175523
申请日：2005-07-05
申请人： Craig Carpenter , Ross Dando , Philip Campbell , Allen Mardian , Jeff Fuss , Randy Mercil
发明人： Craig Carpenter , Ross Dando , Philip Campbell , Allen Mardian , Jeff Fuss , Randy Mercil
IPC分类号： C23C16/44 , C23C16/455 , C30B25/08 , C23C16/00
CPC分类号： C23C16/45544 , C30B25/08
摘要： A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.
摘要翻译：化学气相沉积（CVD）装置包括由室壁部分地限定的沉积室。室壁具有在腔室内的最内表面和室外的最外表面。该装置还包括阀体，其具有在室壁的最内表面和最外表面之间的座。室壁可以是盖子，并且阀门可以包括作为座椅的至少一部分的盖子的一部分。阀体可以包括在室壁的最内表面和最外表面之间的阀壳的至少一部分。这种阀体甚至可以包括作为阀壳体的至少一部分的室壁的一部分。沉积设备还可以包括在室壁的最内表面和最外表面之间的阀体的至少一部分过程化学品入口。在一个示例中，室壁可以形成化学品入口的至少一部分。沉积方法包括将沉积室的沉积室临时隔离工艺化学品供应管线。虽然在室壁处隔离，但是供应管线可以通过来自室壁上游的供应阀将化学物质填充到第一压力。化学品可以从供应管线释放到室壁处的沉积室中。供应管线可以再次临时从室壁处的沉积室隔离。

4. 发明申请

US20050078462A1 Laser assisted material deposition 有权
标题翻译：激光辅助材料沉积
公开(公告)号：US20050078462A1
公开(公告)日：2005-04-14
申请号：US10683806
申请日：2003-10-10
申请人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
发明人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
IPC分类号： C23C16/48 , H01L21/314 , H01L29/78
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy can be provided by an array of lasers. The frequency of the laser beam is selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy is selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.
摘要翻译：提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。电磁能可由激光阵列提供。通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。选择电磁能量的频率以将特定量的能量以提供气体前体的使用激活的特定频率赋予气体前体。

5. 发明申请

US20060289969A1 LASER ASSISTED MATERIAL DEPOSITION 审中-公开
标题翻译：激光辅助材料沉积
公开(公告)号：US20060289969A1
公开(公告)日：2006-12-28
申请号：US11458989
申请日：2006-07-20
申请人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
发明人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
IPC分类号： H01L23/58
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： Electronic devices and systems are provided with material structured from irradiation of a gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.
摘要翻译：电子设备和系统具有由气体前体辐射的材料构成，其电磁能量被调谐到气体前体的吸收频率。可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

6. 发明申请

US20060288937A1 LASER ASSISTED MATERIAL DEPOSITION 审中-公开
标题翻译：激光辅助材料沉积
公开(公告)号：US20060288937A1
公开(公告)日：2006-12-28
申请号：US11458984
申请日：2006-07-20
申请人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
发明人： Ross Dando , Dan Gealy , Craig Carpenter , Philip Campbell , Allen Mardian
IPC分类号： C23C16/00
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： Apparatus is provided for a method of forming a film on a substrate that includes activating a gas precursor to deposit a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. The electromagnetic energy may be provided by an array of lasers. The frequency of the laser beam may be selected by switching from one laser in the array to another laser in the array. The laser array may include laser diodes, one or more tunable lasers, solid state lasers, or gas lasers. The frequency of the electromagnetic energy may be selected to impart specific amounts of energy to a gas precursor at a specific frequency that provides point of use activation of the gas precursor.
摘要翻译：提供了一种在衬底上形成膜的方法，该方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以将材料沉积在衬底上。电磁能可由激光阵列提供。可以通过从阵列中的一个激光器切换到阵列中的另一个激光器来选择激光束的频率。激光器阵列可以包括激光二极管，一个或多个可调激光器，固态激光器或气体激光器。可以选择电磁能量的频率，以提供气体前体的特定量的能量，其以提供气体前体的使用激活的特定频率。

7. 发明申请

US20050133161A1 Apparatus and method for depositing materials onto microelectronic workpieces 失效
标题翻译：将材料沉积到微电子工件上的装置和方法
公开(公告)号：US20050133161A1
公开(公告)日：2005-06-23
申请号：US10933604
申请日：2004-09-02
申请人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
发明人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
IPC分类号： C23C16/44 , C23C16/455 , C23F1/00
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
摘要翻译：用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。反应室可以包括入口和出口。气体分配器位于反应室中。气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。通道从第一表面延伸穿过分配器板到第二表面。此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

8. 发明申请

US20070020394A1 Methods and apparatus for vapor processing of micro-device workpieces 审中-公开
标题翻译：微器件工件蒸汽加工的方法和装置
公开(公告)号：US20070020394A1
公开(公告)日：2007-01-25
申请号：US11540850
申请日：2006-09-28
申请人： Craig Carpenter , Ross Dando , Dan Gealy , Garo Derderian , Allen Mardian
发明人： Craig Carpenter , Ross Dando , Dan Gealy , Garo Derderian , Allen Mardian
IPC分类号： C23C16/00 , B05D1/04
CPC分类号： C23C16/4481
摘要： CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.
摘要翻译：用于处理半导体工件中的CVD，ALD和其它蒸气方法通常需要挥发液体或固体前体。本发明的某些实施方案通过移动反应容器提供改进的和/或更一致的挥发速率。在一个示例性实施例中，反应容器围绕相对于垂直方向以一定角度设置的旋转轴线旋转。这将一定数量的反应前体沉积在容器侧壁的内表面上，该容器的侧壁在容器旋转时暴露于顶部空间。其他实施例使用适于以其他方式移动反应容器的驱动器，例如摆臂，以沿着沿着椭圆形路径移动容器的弓形路径或机械连杆摆动容器。

9. 发明申请

US20050120954A1 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 失效
标题翻译：用于在将材料沉积到微器件工件上的过程中控制气体脉动的装置
公开(公告)号：US20050120954A1
公开(公告)日：2005-06-09
申请号：US11027809
申请日：2004-12-29
申请人： Craig Carpenter , Ross Dando , Allen Mardian
发明人： Craig Carpenter , Ross Dando , Allen Mardian
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , C23C16/00
CPC分类号： C23C16/45525 , C23C16/52
摘要： An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.
摘要翻译：用于将材料沉积到微器件工件上的装置包括构造成提供第一前体，第二前体和吹扫气体的气体源系统。该装置还可以包括联接到气源系统的阀组件。阀组件被配置为控制第一前体的流动，第二前体的流动和净化气体的流动。该装置的另一部件是反应室，其包括联接到阀组件的入口，反应室中的工件保持器和工件保持器下游的出口。该装置还包括监视系统和控制器。监测系统包括将选定的辐射引导通过反应室的辐射源和感测通过反应室引导的辐射的参数的检测器。控制器可操作地耦合到监视系统和阀组件。控制器包含计算机可操作的指令，以在工件的沉积循环期间实时地基于由监测系统感测的参数终止第一前体的流动，第二前体的流动和/或吹扫气体的流动。

10. 发明申请

US20050022739A1 Apparatus and method for depositing materials onto microelectronic workpieces 审中-公开
公开(公告)号：US20050022739A1
公开(公告)日：2005-02-03
申请号：US10933605
申请日：2004-09-02
申请人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
发明人： Craig Carpenter , Allen Mardian , Ross Dando , Kimberly Tschepen , Garo Derderian
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

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