专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5519161A Nutritive glycerol esters of .beta.-acyloxy butyrates 失效
标题翻译： β-酰氧基丁酸酯的营养甘油酯
公开(公告)号：US5519161A
公开(公告)日：1996-05-21
申请号：US453549
申请日：1995-05-03
申请人： Ronald H. Birkhahn , Robert J. Clemens , Charles A. McCombs , John C. Hubbs
发明人： Ronald H. Birkhahn , Robert J. Clemens , Charles A. McCombs , John C. Hubbs
IPC分类号： C07C69/675 , C07C69/66
CPC分类号： C07C69/675
摘要： Novel compositions that are useful as nutrients are disclosed. These compounds are preferably water soluble parenteral nutrients and are glycerol esters of .beta.-acyloxybutyrates of the formula ##STR1## wherein each R is the same or different and is hydrogen, or --COCH.sub.2 CHOR'CH.sub.3), provided that at least one R is not hydrogen and wherein R' is a linear acid ester of even carbon number from 2 to 20 carbons. These compositions are useful as a substitute for glucose in feeding.
摘要翻译：公开了可用作营养物质的新型组合物。这些化合物优选是水溶性肠胃外营养物，并且是式“IMAGE”的β-酰氧基丁酸酯的甘油酯，其中每个R相同或不同，为氢或-COCH 2 CHOR'CH 3），条件是至少一个R不是氢并且其中R'是碳数为2至20个碳原子的直链酸酯。这些组合物可用作饲料中葡萄糖的替代物。

2. 发明授权

US5693850A Nutritive water soluble glycerol esters of hydroxy butyric acid 失效
标题翻译：营养水溶性甘油酯的羟基丁酸
公开(公告)号：US5693850A
公开(公告)日：1997-12-02
申请号：US470399
申请日：1995-06-06
申请人： Ronald H. Birkhahn , Robert J. Clemens , Charles A. McCombs
发明人： Ronald H. Birkhahn , Robert J. Clemens , Charles A. McCombs
IPC分类号： A61K31/22 , C07C69/675 , C07C69/66
CPC分类号： C07C69/675 , A61K31/22
摘要： A process for the production of water soluble glycerol esters useful as parenteral nutrients is disclosed. The process comprises the reaction of glycerol or a protected glycerol and an acetoacetate ester or acetoacetate precursor, yielding an acetoacetyl glycerol which is thereafter reduced, providing a glycerol ester of 3-hydroxybutyric acid.
摘要翻译：公开了用作生产用作肠胃外营养物的水溶性甘油酯的方法。该方法包括甘油或受保护的甘油与乙酰乙酸酯或乙酰乙酸酯前体的反应，得到乙酰乙酰甘油，然后还原，得到3-羟基丁酸的甘油酯。

3. 发明授权

US5420335A Parenteral nutrients based on watersoluble glycerol bisacetoacetates 失效
标题翻译：基于水溶性甘油双乙酰乙酸盐的肠外营养
公开(公告)号：US5420335A
公开(公告)日：1995-05-30
申请号：US129511
申请日：1993-09-30
申请人： Ronald H. Birkhahn , Robert J. Clemens , John C. Hubbs
发明人： Ronald H. Birkhahn , Robert J. Clemens , John C. Hubbs
IPC分类号： A23L1/30 , A61K31/22 , C07C69/72 , A61K31/23 , A23K1/16 , A61K9/10
CPC分类号： A61K31/22 , A23L33/10 , C07C69/72 , A23V2002/00
摘要： Novel parenteral nutrient compositions are disclosed. These compositions are sterile aqueous solutions containing an effective amount of at least one glycerol bisacetoacetate of the formula: ##STR1## wherein one R group is hydrogen, and two R groups are --COCH.sub.2 COCH.sub.3). These compositions are useful as a substitute for glucose in intravenous feeding.
摘要翻译：公开了新型肠外营养组合物。这些组合物是含有有效量的下式的至少一种甘油双乙酰乙酸酯的无菌水溶液：Ψ是-COCH 2 COCH 3）。这些组合物可用作静脉内给药中葡萄糖的替代物。

4. 发明申请

US20120153351A1 Stress modulated group III-V semiconductor device and related method 审中-公开
标题翻译：应力调制III-V族半导体器件及相关方法
公开(公告)号：US20120153351A1
公开(公告)日：2012-06-21
申请号：US12928946
申请日：2010-12-21
申请人： Anilkumar Chandolu , Ronald H. Birkhahn , Troy Larsen , Brett Hughes , Steve Hoff , Scott Nelson , Robert Brown , Leanne Sass
发明人： Anilkumar Chandolu , Ronald H. Birkhahn , Troy Larsen , Brett Hughes , Steve Hoff , Scott Nelson , Robert Brown , Leanne Sass
IPC分类号： H01L29/737 , H01L21/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/205 , H01L29/66431
摘要： According to one embodiment, a group III-V semiconductor device comprises a compositionally graded body disposed over a substrate and below a buffer layer supporting an active area of the group III-V semiconductor device. The compositionally graded body includes a first region applying compressive stress to the substrate. The compositionally graded body further includes a stress modulating region over the first region, where the stress modulating region applies tensile stress to the substrate. In one embodiment, a method for fabricating a group III-V semiconductor device comprises providing a substrate for the group III-V semiconductor device and forming a first region of a compositionally graded body over the substrate to apply compressive stress to the substrate. The method further comprises forming a stress modulating region of the compositionally graded body over the first region, where the stress modulating region applies tensile stress to the substrate.
摘要翻译：根据一个实施例，III-V族半导体器件包括设置在衬底上并且在支撑III-V族III族半导体器件的有源区的缓冲层之下的组成分级体。组成分级的主体包括向衬底施加压应力的第一区域。组成分级体还包括在第一区域上的应力调节区域，其中应力调节区域对基底施加拉伸应力。在一个实施例中，制造III-V族半导体器件的方法包括提供用于III-V族半导体器件的衬底，并在衬底上形成组成分级体的第一区域以向衬底施加压应力。所述方法还包括在所述第一区域上形成所述组成梯度体的应力调制区域，其中所述应力调节区域向所述衬底施加拉伸应力。

5. 发明授权

US06406930B2 Fabrication of visible light emitting device formed from wide band gap semiconductor doped with a rare earth element 失效
标题翻译：由掺杂有稀土元素的宽带隙半导体形成的可见光发射器件的制造
公开(公告)号：US06406930B2
公开(公告)日：2002-06-18
申请号：US09845446
申请日：2001-04-30
申请人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
发明人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
IPC分类号： H01L2100
CPC分类号： H01L33/343 , H01L33/0033 , H01L33/325 , H01S3/16 , H01S3/1628
摘要： A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
摘要翻译：可见光发光器件包括掺杂有基于原子跃迁以各种波长发光的一种或多种元素的宽带隙半导体层。半导体优选为掺杂镧系元素如Er，Pr或Tm的GaN，InN，AlN，BN或其合金。可以通过退火WBGS来增强发光。

6. 发明授权

US06255669B1 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element 有权
标题翻译：由掺杂有稀土元素的宽带隙半导体形成的可见发光器件
公开(公告)号：US06255669B1
公开(公告)日：2001-07-03
申请号：US09299186
申请日：1999-04-23
申请人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
发明人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
IPC分类号： H01L3300
CPC分类号： H01L33/343 , H01L33/0033 , H01L33/325 , H01S3/16 , H01S3/1628
摘要： A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
摘要翻译：可见光发光器件包括掺杂有基于原子跃迁以各种波长发光的一种或多种元素的宽带隙半导体层。半导体优选为掺杂镧系元素如Er，Pr或Tm的GaN，InN，AlN，BN或其合金。可以通过退火WBGS来增强发光。

7. 发明授权

US08269253B2 Rare earth enhanced high electron mobility transistor and method for fabricating same 有权
标题翻译：稀土增强型高电子迁移率晶体管及其制造方法
公开(公告)号：US08269253B2
公开(公告)日：2012-09-18
申请号：US12455933
申请日：2009-06-08
申请人： Ronald H. Birkhahn
发明人： Ronald H. Birkhahn
IPC分类号： H01L31/102
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207 , H01L29/66462
摘要： According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also comprises a second group III-V intrinsic layer formed over the insulator layer, and a group III-V semiconductor layer formed over the second group III-V intrinsic layer. In one embodiment, a method for fabricating a HEMT comprises forming a first group III-V intrinsic layer and doping the first group III-V intrinsic layer with a rare earth additive to produce an insulator layer. The method also comprises forming a second group III-V intrinsic layer over the insulator layer, and further forming a group III-V semiconductor layer over the second group III-V intrinsic layer. A two-dimensional electron gas (2DEG) is formed at a heterojunction interface of the group III-V semiconductor layer and the second group III-V intrinsic layer.
摘要翻译：根据一个实施例，高电子迁移率晶体管（HEMT）包括包含掺杂有稀土添加剂的第一III-V族本征层的绝缘体层。 HEMT还包括形成在绝缘体层上的第二组III-V本征层和形成在第二组III-V本征层上的III-V族半导体层。在一个实施例中，制造HEMT的方法包括形成第一III-V族本征层，并用稀土添加剂掺杂第一III-V族本征层以产生绝缘体层。该方法还包括在绝缘体层上形成第二组III-V本征层，并且进一步在第二组III-V本征层上形成III-V族半导体层。在III-V族半导体层和第二组III-V本征层的异质结界面处形成二维电子气（2DEG）。

8. 发明申请

US20100308375A1 Rare earth enhanced high electron mobility transistor and method for fabricating same 有权
标题翻译：稀土增强型高电子迁移率晶体管及其制造方法
公开(公告)号：US20100308375A1
公开(公告)日：2010-12-09
申请号：US12455933
申请日：2009-06-08
申请人： Ronald H. Birkhahn
发明人： Ronald H. Birkhahn
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/207 , H01L29/66462
摘要： According to one embodiment, a high electron mobility transistor (HEMT) comprises an insulator layer comprising a first group III-V intrinsic layer doped with a rare earth additive. The HEMT also comprises a second group III-V intrinsic layer formed over the insulator layer, and a group III-V semiconductor layer formed over the second group III-V intrinsic layer. In one embodiment, a method for fabricating a HEMT comprises forming a first group III-V intrinsic layer and doping the first group III-V intrinsic layer with a rare earth additive to produce an insulator layer. The method also comprises forming a second group III-V intrinsic layer over the insulator layer, and further forming a group III-V semiconductor layer over the second group III-V intrinsic layer. A two-dimensional electron gas (2DEG) is formed at a heterojunction interface of the group III-V semiconductor layer and the second group III-V intrinsic layer.
摘要翻译：根据一个实施例，高电子迁移率晶体管（HEMT）包括包含掺杂有稀土添加剂的第一III-V族本征层的绝缘体层。 HEMT还包括形成在绝缘体层上的第二组III-V本征层和形成在第二组III-V本征层上的III-V族半导体层。在一个实施例中，制造HEMT的方法包括形成第一III-V族本征层，并用稀土添加剂掺杂第一III-V族本征层以产生绝缘体层。该方法还包括在绝缘体层上形成第二组III-V本征层，并且进一步在第二组III-V本征层上形成III-V族半导体层。在III-V族半导体层和第二组III-V本征层的异质结界面处形成二维电子气（2DEG）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式