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1. 发明授权

US4786479A Apparatus for dendritic web growth systems 失效
标题翻译：树枝状网络生长系统的装置
公开(公告)号：US4786479A
公开(公告)日：1988-11-22
申请号：US92791
申请日：1987-09-02
申请人： Rolv Hundal , Raymond G. Seidensticker , James P. McHugh
发明人： Rolv Hundal , Raymond G. Seidensticker , James P. McHugh
IPC分类号： C30B15/00 , C30B15/14 , C30B15/34 , C30B29/06 , C30B29/64 , H01L21/208 , C30B35/00 , C30B29/60
CPC分类号： C30B15/34 , C30B15/14 , Y10S117/90 , Y10T117/1068
摘要： A method and apparatus for growing dendritic web crystals at increased growth rates is disclosed in which a sublid is used to maintain a sufficiently hot silicon melt surface temperature to insure stable web growth, while simultaneously permitting more efficient heat transfer from the growing dendritic web to the cooler susceptor lid.
摘要翻译：公开了一种用于以增长的生长速率生长树枝状网状晶体的方法和装置，其中使用亚树脂来保持足够热的硅熔体表面温度以确保稳定的幅材生长，同时允许从生长的树枝状网到更高效的热传递冷却器托架盖。

2. 发明授权

US4971650A Method of inhibiting dislocation generation in silicon dendritic webs 失效
标题翻译：抑制硅枝状网中位错产生的方法
公开(公告)号：US4971650A
公开(公告)日：1990-11-20
申请号：US411129
申请日：1989-09-22
申请人： John A. Spitznagel , Raymond G. Seidensticker , James P. McHugh
发明人： John A. Spitznagel , Raymond G. Seidensticker , James P. McHugh
IPC分类号： C30B15/14 , C30B15/22 , C30B15/34 , C30B29/06 , C30B29/64
CPC分类号： C30B15/14 , C30B15/22 , C30B15/34 , Y10S117/904
摘要： A method of tailoring the heat balance of the outer edge of the dendrites adjacent the meniscus to produce thinner, smoother dendrites, which have substantially less dislocation sources contiguous with the dendrites, by changing the view factor to reduce radiation cooling or by irradiating the dendrites with light from a quartz lamp or a laser to raise the temperature of the dendrites.
摘要翻译：一种调整邻近弯液面的树枝状外缘的热平衡的方法，以产生更薄，更平滑的树突，其具有基本上较少的与枝晶毗邻的位错源，通过改变观察因子以减少辐射冷却或通过用来自石英灯或激光的光提高树突的温度。

3. 发明授权

US5229082A Melt replenishment system for dendritic web growth 失效
标题翻译：树枝状生长的熔体补充体系
公开(公告)号：US5229082A
公开(公告)日：1993-07-20
申请号：US749503
申请日：1991-08-16
申请人： Raymond G. Seidensticker , Richard J. Ravas , George V. B. Hall , James P. McHugh , Frank L. Przywarty , Lynd R. McCormick
发明人： Raymond G. Seidensticker , Richard J. Ravas , George V. B. Hall , James P. McHugh , Frank L. Przywarty , Lynd R. McCormick
IPC分类号： C30B15/02 , C30B15/20 , C30B15/34 , C30B29/64
CPC分类号： C30B15/02 , C30B15/34 , Y10S117/903 , Y10T117/1008 , Y10T117/1044 , Y10T117/1056
摘要： A melt replenishment system for dendritic web growth having a pellet feed arrangement, which distributes equal amounts of feed material to a pair of feed tubes in communication with opposite ends of a crucible to maintain a melt pool at a constant level and a cover gas system, which keeps the feed tubes flowing and helps maintain thermal consistency within the melt.
摘要翻译：一种用于树枝状网生长的熔体补充系统，其具有颗粒进料装置，其将相等量的进料分配到与坩埚的相对端连通的一对进料管中，以将熔池保持在恒定水平并且覆盖气体系统，其保持进料管流动并有助于保持熔体内的热稠度。

4. 发明授权

US4751059A Apparatus for growing dendritic web crystals of constant width 失效
标题翻译：用于生长恒定宽度的树枝状网状晶体的装置
公开(公告)号：US4751059A
公开(公告)日：1988-06-14
申请号：US938651
申请日：1986-12-05
申请人： James P. McHugh , Raymond G. Seidensticker , Charles S. Duncan
发明人： James P. McHugh , Raymond G. Seidensticker , Charles S. Duncan
IPC分类号： C30B15/00 , C30B15/14 , C30B15/34 , C30B29/06
CPC分类号： C30B15/14 , C30B15/34 , Y10T117/1044 , Y10T117/1068
摘要： The concept of this invention is to provide a thermal geometry which produces web growth at a constant width by balancing the heat loss pattern from the growing dendrites in such a manner that the outer requirements for stable web growth are simultaneously met. This is accomplished by configuring the geometry of the growth system such that the heat loss pattern from the growing web, the heat loss pattern from the growing dendrites, and the temperature profile in the melt can each be controlled independently and simultaneously optimized.
摘要翻译：本发明的概念是提供一种热几何形状，其通过平衡来自不断增长的树枝状结构的热损失模式，以恒定宽度产生幅材生长，使得稳定幅材生长的外部要求同时得到满足。这是通过配置生长系统的几何形状来实现的，使得来自生长腹板的热损失模式，来自生长树枝状的热损失模式和熔体中的温度分布各自可以独立地并且同时优化。

5. 发明授权

US5098287A Lid for improved dendritic web growth 失效
标题翻译：用于改善树枝状网络生长
公开(公告)号：US5098287A
公开(公告)日：1992-03-24
申请号：US525205
申请日：1990-03-16
申请人： Charles S. Duncan , Edgar L. Kochka , Paul A. Piotrowski , Raymond G. Seidensticker
发明人： Charles S. Duncan , Edgar L. Kochka , Paul A. Piotrowski , Raymond G. Seidensticker
IPC分类号： C30B15/14 , C30B15/34
CPC分类号： C30B15/14 , C30B15/34
摘要： A lid for a susceptor in which a crystalline material is melted by induction heating to form a pool or melt of molten material from which a dendritic web of essentially a single crystal of the material is pulled through an elongated slot in the lid and the lid has a pair of generally round openings adjacent the ends of the slot and a groove extends between each opening and the end of the slot. The grooves extend from the outboard surface of the lid to adjacent the inboard surface providing a strip contiguous with the inboard surface of the lid to produce generally uniform radiational heat loss across the width of the dendritic web adjacent the inboard surface of the lid to reduce thermal stresses in the web and facilitate the growth of wider webs at a greater withdrawal rate.
摘要翻译：一种用于感受器的盖子，其中结晶材料通过感应加热熔化以形成熔融材料的熔池或熔融材料，所述材料的基本上单晶的树枝状纤维网从该熔融材料的熔池中被拉过盖和盖的细长槽邻近狭槽的端部的一对大致圆形的开口，并且槽在每个开口和槽的端部之间延伸。凹槽从盖的外侧表面延伸到相邻的内侧表面，提供与盖的内侧表面相邻的条带，以在邻近盖的内表面的树枝状网状物的宽度上产生大致均匀的辐射热损失，以减少热量在网络中强调，并以更大的撤离率促进更广泛的网络的增长。

6. 发明授权

US4919901A Barrier design for crucibles for silicon dendritic web growth 失效
标题翻译：用于硅树枝状网生长的坩埚的阻挡层设计
公开(公告)号：US4919901A
公开(公告)日：1990-04-24
申请号：US140071
申请日：1987-12-31
申请人： Raymond G. Seidensticker , Edgar L. Kochka , Charles S. Duncan
发明人： Raymond G. Seidensticker , Edgar L. Kochka , Charles S. Duncan
IPC分类号： C30B15/10 , C30B15/12 , C30B29/06 , C30B29/64 , H01L21/208
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： This invention delineates a multiple barrier design for separating the feed compartment (12) from the growth compartment (13) in crucibles (10) used for silicon dendritic web growth. The use of the barrier design greatly reduces the thermal interaction between the two compartments permitting larger replenishment rates without adverse effect on crystal growth. Its novelty lies in having a primary and secondary barrier (15,16) spaced apart from one another such that there exists a space (22) between the barriers (15,16) which is devoid of liquid silicon thus reducing the thermal conductance of the combination.
摘要翻译：本发明描述了用于在用于硅树枝状网生长的坩埚（10）中将进料室（12）与生长室（13）分离的多重阻挡设计。使用屏障设计大大降低了两个隔间之间的热相互作用，从而允许较大的补充速率，而不会对晶体生长产生不利影响。其新颖之处在于具有彼此间隔开的初级和次级屏障（15,16），使得在不含液态硅的阻挡层（15,16）之间存在空间（22），从而降低了组合。

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