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1. 发明授权

US4205393A Magnetic domain storage device 失效
标题翻译：磁畴存储设备
公开(公告)号：US4205393A
公开(公告)日：1980-05-27
申请号：US887057
申请日：1978-03-16
申请人： Herbert Henkler , Roland Koenig , Hermann Deichelmann , Volker Koch
发明人： Herbert Henkler , Roland Koenig , Hermann Deichelmann , Volker Koch
IPC分类号： G11C11/14 , G11C19/08 , H01F10/06
CPC分类号： G11C19/0841 , H01F10/06
摘要： A magnetic domain storage device comprising a ferromagnetic, polycrystalline metal layer which is applied to a support and comprises areas of different coercivity, the areas of lower coercivity in the form of strip-shaped channels being surrounded by areas of higher coercivity; a system of electrical conductors, extending in planes arranged parallel and in close vicinity to the ferromagnetic layer for creating, propagating and detecting magnetic domains in the channels of lower coercivity; and a baseplate with electrical connections. The areas of lower coercivity follow a path similar to a spiral with its one end adjacent to the center of the support and the other end adjacent to a corner of the support and executing at least one full 360.degree. turn between both ends. The domain storage devices of this type are distinguished by a higher storage capacity.
摘要翻译：一种磁畴存储装置，其包括施加到支撑件并且包括不同矫顽力的区域的铁磁性多晶金属层，带状通道形式的较低矫顽力的区域被具有较高矫顽力的区域包围; 电导体系统，其平行布置并且紧邻铁磁层布置，用于在低矫顽力的通道中产生，传播和检测磁畴; 和带有电气连接的底板。低矫顽力的区域遵循类似于螺旋的路径，其一端与支撑件的中心相邻，另一端靠近支架的角部，并在两端之间执行至少一个完整的360度转弯。这种类型的域存储设备的区别在于更高的存储容量。

2. 发明授权

US4109317A Magnetic thin film storage device 失效
标题翻译：磁性薄膜存储器件
公开(公告)号：US4109317A
公开(公告)日：1978-08-22
申请号：US659895
申请日：1976-02-20
申请人： Herbert Henkler , Hermann Deichelmann , Roland Koenig , Volker Koch , Bernd Roeger
发明人： Herbert Henkler , Hermann Deichelmann , Roland Koenig , Volker Koch , Bernd Roeger
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0841 , G11C19/0875
摘要： A magnetic thin film storage device of simplified design working on the shift register principle and comprising a flat support to which a ferromagnetic layer has been applied, which layer contains regions of different coercivity, lower-coercivity regions being surrounded by regions of higher coercivity, and also comprising electric conductors extending in planes which are parallel to the support, the conductors serving to produce the magnetic fields required to propagate magnetic domains into the lower-coercivity regions, at least one group of channels being provided which terminate in the same enlarged lower-coercivity area, and the magnetic domains contained in the channels terminating in the said enlarged area being propagated individually and consecutively into that enlarged area.The components of thin-film storage devices of this type can be easily brought into register with the aid of mechanical stops or similar devices and their production can thus be largely automated; besides, the risk of random errors occurring in the flow of data can be substantially reduced, owing to the particularly simple geometric shape of the channels.

3. 发明授权

US3962690A Thin film magnetic storage device 失效
标题翻译：薄膜磁存储装置
公开(公告)号：US3962690A
公开(公告)日：1976-06-08
申请号：US503285
申请日：1974-09-05
申请人： Roland Koenig , Hermann Deichelmann , Herbert Henkler
发明人： Roland Koenig , Hermann Deichelmann , Herbert Henkler
IPC分类号： G11C11/14 , G11C19/08
CPC分类号： G11C19/0841
摘要： A thin film magnetic storage device consisting of a flat support to which a ferromagnetic layer which areas of different coercive force is applied, the low coercive force areas being surrounded by high coercive force areas, and further consisting of electric conductors extending in planes parallel with the support and used to produce the magnetic fields required for the propagation of magnetic domains in the low coercive force areas. The low coercive force areas are provided in the shape of strip-like channels, and the electric conductors are arranged in two separate planes such that they intersect the channels at right angles and that the conductors of one plane, at points of intersecton with the channels are situated above the gaps between the conductors of the second plane, and that the width of the conductors at points of intersecton with the channels is at least as great as the channel width. Thin film magnetic storage devices having this structure are simpler and cheaper to manufacture and are characterized by higher noise immunity and a low power requirement.
摘要翻译：一种由平坦支撑体构成的薄膜磁存储装置，其中施加有不同矫顽力的区域的铁磁层，低矫顽力区域由高矫顽力区域包围，并且还包括在与支持并用于产生磁场在低矫顽力区域中传播所需的磁场。低矫顽力区域设置为条状通道的形状，并且电导体布置在两个分开的平面中，使得它们以直角与通道相交，并且一个平面的导体在与通道交叉的点处位于第二平面的导体之间的间隙之上，并且导体在与通道交叉的点处的宽度至少与通道宽度一样大。具有这种结构的薄膜磁存储装置制造简单且便宜，其特征在于具有更高的抗噪声性和低功率要求。

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