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    • 1. 发明授权
    • Magnetic domain storage device
    • 磁畴存储设备
    • US4205393A
    • 1980-05-27
    • US887057
    • 1978-03-16
    • Herbert HenklerRoland KoenigHermann DeichelmannVolker Koch
    • Herbert HenklerRoland KoenigHermann DeichelmannVolker Koch
    • G11C11/14G11C19/08H01F10/06
    • G11C19/0841H01F10/06
    • A magnetic domain storage device comprising a ferromagnetic, polycrystalline metal layer which is applied to a support and comprises areas of different coercivity, the areas of lower coercivity in the form of strip-shaped channels being surrounded by areas of higher coercivity; a system of electrical conductors, extending in planes arranged parallel and in close vicinity to the ferromagnetic layer for creating, propagating and detecting magnetic domains in the channels of lower coercivity; and a baseplate with electrical connections. The areas of lower coercivity follow a path similar to a spiral with its one end adjacent to the center of the support and the other end adjacent to a corner of the support and executing at least one full 360.degree. turn between both ends. The domain storage devices of this type are distinguished by a higher storage capacity.
    • 一种磁畴存储装置,其包括施加到支撑件并且包括不同矫顽力的区域的铁磁性多晶金属层,带状通道形式的较低矫顽力的区域被具有较高矫顽力的区域包围; 电导体系统,其平行布置并且紧邻铁磁层布置,用于在低矫顽力的通道中产生,传播和检测磁畴; 和带有电气连接的底板。 低矫顽力的区域遵循类似于螺旋的路径,其一端与支撑件的中心相邻,另一端靠近支架的角部,并在两端之间执行至少一个完整的360度转弯。 这种类型的域存储设备的区别在于更高的存储容量。
    • 2. 发明授权
    • Tape transport apparatus
    • 磁带传送装置
    • US4225098A
    • 1980-09-30
    • US937721
    • 1978-08-29
    • Herbert HenklerManfred GehrungEduard Rasek
    • Herbert HenklerManfred GehrungEduard Rasek
    • G11B15/22G11B15/295G11B15/43G11B15/32
    • G11B15/43G11B15/22G11B15/295
    • This invention concerns a tape transport apparatus based on the contact-winding principle and, in particular, an apparatus for generating/keeping constant the tape tension during all operational phases of the tape transport, and for the quick, trouble-free braking of each tape pack, independently of the amount of tape wound thereon. By means of magnetic braking devices allocated to each tape pack and to the capstan whose braking action depends upon the momentary diameter of the tape packs, the object of the invention is achieved technically and economically with the greatest possible success. The apparatus is applicable in all cases where tape-like material is to be uniformly wound and transported without undue stress, and in particular for magnetic tape transport systems.
    • 本发明涉及一种基于接触绕组原理的带式传送装置,特别涉及一种用于在带传送的所有操作阶段期间产生/保持带张力恒定的装置,以及用于每个带的快速,无故障制动 独立于缠绕在其上的胶带的数量。 通过分配给每个磁带组的磁性制动装置和其制动作用取决于磁带组件的瞬时直径的绞盘,本发明的目的在技术和经济上以最大可能的成功实现。 该装置适用于所有的情况,其中带状材料将被均匀地卷绕和运输而没有过度的应力,特别是对于磁带传送系统。
    • 4. 发明授权
    • Thin film magnetic storage device
    • 薄膜磁存储装置
    • US3962690A
    • 1976-06-08
    • US503285
    • 1974-09-05
    • Roland KoenigHermann DeichelmannHerbert Henkler
    • Roland KoenigHermann DeichelmannHerbert Henkler
    • G11C11/14G11C19/08
    • G11C19/0841
    • A thin film magnetic storage device consisting of a flat support to which a ferromagnetic layer which areas of different coercive force is applied, the low coercive force areas being surrounded by high coercive force areas, and further consisting of electric conductors extending in planes parallel with the support and used to produce the magnetic fields required for the propagation of magnetic domains in the low coercive force areas. The low coercive force areas are provided in the shape of strip-like channels, and the electric conductors are arranged in two separate planes such that they intersect the channels at right angles and that the conductors of one plane, at points of intersecton with the channels are situated above the gaps between the conductors of the second plane, and that the width of the conductors at points of intersecton with the channels is at least as great as the channel width. Thin film magnetic storage devices having this structure are simpler and cheaper to manufacture and are characterized by higher noise immunity and a low power requirement.
    • 一种由平坦支撑体构成的薄膜磁存储装置,其中施加有不同矫顽力的区域的铁磁层,低矫顽力区域由高矫顽力区域包围,并且还包括在与 支持并用于产生磁场在低矫顽力区域中传播所需的磁场。 低矫顽力区域设置为条状通道的形状,并且电导体布置在两个分开的平面中,使得它们以直角与通道相交,并且一个平面的导体在与通道交叉的点处 位于第二平面的导体之间的间隙之上,并且导体在与通道交叉的点处的宽度至少与通道宽度一样大。 具有这种结构的薄膜磁存储装置制造简单且便宜,其特征在于具有更高的抗噪声性和低功率要求。