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    • 5. 发明授权
    • Demultiplexing photodetector
    • 解复用光电探测器
    • US4301463A
    • 1981-11-17
    • US128305
    • 1980-03-07
    • Charles A. Burrus, Jr.Joe C. CampbellAndrew G. DentaiTien P. Lee
    • Charles A. Burrus, Jr.Joe C. CampbellAndrew G. DentaiTien P. Lee
    • H01L31/11H04B10/158H01L27/14
    • H01L31/11
    • A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.
    • 公开了三端,全集成解复用光电二极管,其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。 通过n型磷化铟的缓冲层(204)分离具有不等带隙并且各具有pn结的铟,镓,砷化磷的两个四元层(203和205)。 通过使底部四周层具有较高的带隙能量从而允许其检测到辐射中的较短波长并且使最顶层的四分层(205)具有较低的带隙能量从而允许其检测到 波长较长。 衬底上的底部触点(213)具有开口,从而提供窗口(230),入射辐射(250)可以通过该窗口通过衬底耦合到两个四层。