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1. 发明授权

US4830982A Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors 失效
标题翻译：使用有机金属钛掺杂剂前体形成III-V半绝缘膜的方法
公开(公告)号：US4830982A
公开(公告)日：1989-05-16
申请号：US59133
申请日：1987-06-04
申请人： Andrew G. Dentai , Charles H. Joyner, Jr. , Timothy W. Weidman , John L. Zilko
发明人： Andrew G. Dentai , Charles H. Joyner, Jr. , Timothy W. Weidman , John L. Zilko
IPC分类号： C30B25/02 , H01L21/205 , H01L29/207
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L29/207 , Y10S148/04 , Y10S148/041 , Y10S148/065 , Y10S148/11 , Y10S438/918
摘要： Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.
摘要翻译：基于III-V族半导体化合物的半绝缘外延层通过使用有机钛基化合物的MOCVD工艺制备。电阻率大于1×107欧姆/厘米。

2. 发明授权

US4301463A Demultiplexing photodetector 失效
标题翻译：解复用光电探测器
公开(公告)号：US4301463A
公开(公告)日：1981-11-17
申请号：US128305
申请日：1980-03-07
申请人： Charles A. Burrus, Jr. , Joe C. Campbell , Andrew G. Dentai , Tien P. Lee
发明人： Charles A. Burrus, Jr. , Joe C. Campbell , Andrew G. Dentai , Tien P. Lee
IPC分类号： H01L31/11 , H04B10/158 , H01L27/14
CPC分类号： H01L31/11
摘要： A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.
摘要翻译：公开了三端，全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。通过n型磷化铟的缓冲层（204）分离具有不等带隙并且各具有pn结的铟，镓，砷化磷的两个四元层（203和205）。通过使底部四周层具有较高的带隙能量从而允许其检测到辐射中的较短波长并且使最顶层的四分层（205）具有较低的带隙能量从而允许其检测到波长较长。衬底上的底部触点（213）具有开口，从而提供窗口（230），入射辐射（250）可以通过该窗口通过衬底耦合到两个四层。

3. 发明授权

US4751555A Semiconductor heterointerface optical waveguide 失效
标题翻译：半导体异质界面光波导
公开(公告)号：US4751555A
公开(公告)日：1988-06-14
申请号：US48286
申请日：1987-05-11
申请人： Rodney C. Alferness , Andrew G. Dentai , Charles H. Joyner, Jr.
发明人： Rodney C. Alferness , Andrew G. Dentai , Charles H. Joyner, Jr.
IPC分类号： G02B6/12 , C30B25/02 , C30B29/40 , G02B6/122 , G02F1/025 , H01S5/042 , H01S5/32 , H01S5/323 , H01L29/161
CPC分类号： H01S5/0422 , G02F1/025 , H01S5/32325 , G02F2202/102 , H01S5/3201
摘要： Low loss semiconductor waveguides for supporting propagation of optical signals over a wide range of wavelengths are achieved by growing at least two epitaxial layers of dopant material contiguous along a major surface of each layer to form a heterointerface therebetween. At least one of the epitaxial layers includes a sufficient concentration of semiconductor material to cause strain via lattice mismatch substantially at and near the heterointerface. The strain induces a change in refractive index such that the heterointerface exhibits a substantially higher refractive index than a portion of each epitaxial layer proximate to the heterointerface. The resulting waveguide is capable of supporting propagation of optical signals substantially along the heterointerface. In one example, contiguous epitaxial layers of InP and InGaP form a waveguide for optical signals at wavelengths greater than 0.93 .mu.m. The concentration of Ga in the InGaP epitaxial layer is varied from 10.sup.18 to 10.sup.20 cm.sup.-3 to increase the refractive index difference between the heterointerface and the immediate surrounding layers.

4. 发明授权

US5625206A High-speed double-heterostructure bipolar transistor devices 失效
标题翻译：高速双异质结双极晶体管器件
公开(公告)号：US5625206A
公开(公告)日：1997-04-29
申请号：US657255
申请日：1996-06-03
申请人： S. Chandrasekhar , Andrew G. Dentai , Yasuyuki Miyamoto
发明人： S. Chandrasekhar , Andrew G. Dentai , Yasuyuki Miyamoto
IPC分类号： H01L29/737 , H01L29/201
CPC分类号： H01L29/7371
摘要： The total base-collector capacitance of a double-heterostructure bipolar transistor device is reduced by removing semiconductor material from the extrinsic regions and replacing the removed material with a relatively-low-dielectric-constant material, The base-collector capacitance is further reduced by using a composite subcollector structure that permits the extrinsic regions to be made thicker than the intrinsic region of the device.
摘要翻译：通过从外部区域去除半导体材料并用相对低介电常数的材料代替去除的材料，可以减少双异质结双极晶体管器件的总基极 - 集电极电容。基极 - 集电极电容通过使用复合子集电极结构，其允许外部区域被制成比该器件的本征区域更厚。

5. 发明授权

US5577138A Integrated-circuit optical network unit 失效
标题翻译：集成电路光网络单元
公开(公告)号：US5577138A
公开(公告)日：1996-11-19
申请号：US516472
申请日：1995-08-17
申请人： S. Chandrasekhar , Andrew G. Dentai
发明人： S. Chandrasekhar , Andrew G. Dentai
IPC分类号： H01L27/15 , G02B6/12 , G02B6/42 , H04B10/02 , H04B10/28 , H04B10/00
CPC分类号： G02B6/4246 , G02B6/12004
摘要： An optical network unit designed to be connected to incoming and outgoing fibers at a customer location is made in integrated-circuit form. One portion of the integrated circuit includes a thin-film waveguiding layer and functions as an optical splitter, a photodetector and a modulator. Another portion of the circuit serves as an amplifier..
摘要翻译：设计为在客户位置连接到输入和输出光纤的光网络单元以集成电路形式。集成电路的一部分包括薄膜波导层，并且用作光分路器，光电检测器和调制器。电路的另一部分用作放大器。

6. 发明授权

US4782034A Semi-insulating group III-V based compositions doped using bis arene titanium sources 失效
标题翻译：使用双芳烃钛源掺杂的半绝缘组III-V基组合物
公开(公告)号：US4782034A
公开(公告)日：1988-11-01
申请号：US58099
申请日：1987-06-04
申请人： Andrew G. Dentai , Charles H. Joyner, Jr. , Timothy W. Weidman , John L. Zilko
发明人： Andrew G. Dentai , Charles H. Joyner, Jr. , Timothy W. Weidman , John L. Zilko
IPC分类号： C30B25/02 , H01L21/205 , H01L29/207 , H01L21/285
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L29/207 , Y10S148/023 , Y10S148/056 , Y10S148/11 , Y10S438/918
摘要： Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.
摘要翻译：基于III-V族半导体化合物的半绝缘外延层通过使用双芳烃钛源（例如环戊二烯基环庚三烯基钛和双（苯）钛）的MOCVD工艺制备。

7. 发明授权

US09372306B1 Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) 有权
标题翻译：在具有集成的激光源阵列和使用延伸的相同有源层（EIAL）的调制器的单片光子集成电路（PIC）中实现可接受的性能和制造方法，
公开(公告)号：US09372306B1
公开(公告)日：2016-06-21
申请号：US11045827
申请日：2005-01-27
申请人： Radhakrishnan L. Nagarajan , Fred A. Kish, Jr. , Masaki Kato , Charles H. Joyner , David F. Welch , Randal A. Salvatore , Richard P. Schneider , Mehrdad Ziari , Damien Jean Henri Lambert , Sheila K. Hurtt , Andrew G. Dentai , Atul Mathur , Vincent G. Dominic
发明人： Radhakrishnan L. Nagarajan , Fred A. Kish, Jr. , Masaki Kato , Charles H. Joyner , David F. Welch , Randal A. Salvatore , Richard P. Schneider , Mehrdad Ziari , Damien Jean Henri Lambert , Sheila K. Hurtt , Andrew G. Dentai , Atul Mathur , Vincent G. Dominic
IPC分类号： G02B6/12
CPC分类号： G02B6/12009 , G02B6/00 , G02B6/02204 , G02B6/12004 , G02B6/12019 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02B6/124 , G02B6/4215 , G02F1/0121 , G02F1/01725 , G02F1/025 , G02F2001/0175 , G02F2001/01758 , G02F2203/05 , H01S5/0085 , H01S5/024 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02476 , H01S5/026 , H01S5/0261 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/2214 , H01S5/2224 , H01S5/227 , H01S5/2272 , H01S5/2275 , H01S5/3408 , H01S5/34306 , H01S5/4025 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/506 , H04B10/572 , H04J14/02
摘要： A method provides acceptable performance from a semiconductor transmitter photonic integrated circuit (TxPIC) that contains a plurality of modulated sources each comprising a laser source and an external modulator where each laser source provides a different emission wavelength and each modulated source forms a separate signal channel, comprising the steps of providing at least some of the signal channels with an extended identical active layer (EIAL) so that the modulated sources each have an identical active region wavelength and detuning the laser emission wavelength in each laser source within the EIAL from the laser active region wavelength.
摘要翻译：一种方法从包含多个调制源的半导体发射器光子集成电路（TxPIC）提供可接受的性能，每个调制源包括激光源和外部调制器，其中每个激光源提供不同的发射波长，并且每个调制的源形成单独的信号通道，包括以下步骤：向扩展的相同有源层（EIAL）提供信号通道的至少一些，使得调制源各自具有相同的有源区波长并使来自激光器活动的EIAL内的每个激光源中的激光发射波长失谐区域波长。

8. 发明申请

US20110147874A1 PHOTODIODE ISOLATION IN A PHOTONIC INTEGRATED CIRCUIT 有权
标题翻译：光电集成电路中的光电离隔离
公开(公告)号：US20110147874A1
公开(公告)日：2011-06-23
申请号：US12646558
申请日：2009-12-23
申请人： RADHAKRISHNAN L. NAGARAJAN , ANDREW G. DENTAI , SCOTT CORZINE , STEVEN NGUYEN , VIKRANT LAL , Jacco L. Pleumeekers , Peter W. Evans
发明人： RADHAKRISHNAN L. NAGARAJAN , ANDREW G. DENTAI , SCOTT CORZINE , STEVEN NGUYEN , VIKRANT LAL , Jacco L. Pleumeekers , Peter W. Evans
IPC分类号： H01L31/102 , H01L31/105 , H01L31/0232
CPC分类号： H01L31/105 , G02B6/12004 , G02B6/12007 , G02B6/2813 , G02B6/42 , H01L31/02019
摘要： Consistent with the present disclosure, a current blocking layer is provided between output waveguides carrying light to be sensed by the photodiodes in a balanced photodetector, and the photodiodes themselves. Preferably, the photodiodes are provided above the waveguides and sense light through evanescently coupling with the waveguides. In addition, the current blocking layer may include alternating p and n-type conductivity layers, such that, between adjacent ones of such layers, a reverse biased pn-junction is formed. The pn-junctions, therefore, limit the amount of current flowing from one photodiode of the balanced detector to the other, thereby improving performance.
摘要翻译：与本公开一致，在平衡光电检测器中的由光电二极管传送的光的输出波导之间提供电流阻挡层，以及光电二极管本身。优选地，光电二极管设置在波导上方并且通过与波导衰减耦合来感测光。此外，电流阻挡层可以包括交替的p型和n型导电层，使得在相邻的这些层之间形成反向偏置的pn结。因此，pn结限制了从平衡检测器的一个光电二极管流到另一个的电流量，从而提高性能。

9. 发明授权

US07437029B2 Method of manufacturing and apparatus for a transmitter photonic integrated circuit (TXPIC) chip 有权
标题翻译：用于发射机光子集成电路（TXPIC）芯片的制造方法和装置
公开(公告)号：US07437029B2
公开(公告)日：2008-10-14
申请号：US11279004
申请日：2006-04-07
申请人： Charles H. Joyner , Fred A. Kish, Jr. , Frank H. Peters , Atul Mathur , David F. Welch , Andrew G. Dentai , Damien Lambert , Richard P. Schneider , Mark J. Missey
发明人： Charles H. Joyner , Fred A. Kish, Jr. , Frank H. Peters , Atul Mathur , David F. Welch , Andrew G. Dentai , Damien Lambert , Richard P. Schneider , Mark J. Missey
IPC分类号： G02B6/12
CPC分类号： H01S5/06258 , G02B6/12019 , G02B6/12033 , H01S5/026 , H01S5/0265 , H01S5/106 , H01S5/12 , H01S5/204 , H01S5/205 , H01S5/22 , H01S5/4031
摘要： A monolithic photonic integrated circuit (PIC) chip where the active waveguide cores of the modulated sources of the PIC are multiple quantum wells (MQWs) and the passive waveguide cores of an optical combiner are a bulk layer or material. The cores of the waveguide cores may be a quaternary such as InGaAsP or InAlGaAs.
摘要翻译：单片光子集成电路（PIC）芯片，其中PIC的调制源的有源波导核心是多个量子阱（MQW），并且光学组合器的无源波导核心是体层或材料。波导芯的芯可以是诸如InGaAsP或InAlGaAs的四元体。

10. 发明授权

US5432123A Method for preparation of monolithically integrated devices 失效
标题翻译：单片集成器件的制备方法
公开(公告)号：US5432123A
公开(公告)日：1995-07-11
申请号：US153861
申请日：1993-11-16
申请人： Andrew G. Dentai , Fumio Koyama , Kang-Yi Liou
发明人： Andrew G. Dentai , Fumio Koyama , Kang-Yi Liou
IPC分类号： H01L33/00 , H01S5/00 , H01S5/026 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/343 , H01S5/50 , H01L21/20
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/2077 , H01S5/227 , H01S5/3203 , H01S5/34306 , H01S5/34313 , H01S5/50
摘要： A monolithically integrated electroabsorption modulator/optical amplifier is described which is prepared using a lateral bandgap control technique with a planar III-V compund semiconductor substrate. The described device evidences a bandgap shift in excess of 60 nanometers, so indicating its applicability for integration of modulators and lasers or amplifiers. The device is fabricated by atmospheric pressure metal organic condensed vapor deposition growth of gallium indium arsenise/gallium indium aresenide phosphide strained quantum wells on ridges deposited on the substrate.
摘要翻译：描述了使用具有平面III-V组合半导体衬底的横向带隙控制技术制备的单片集成电吸收调制器/光放大器。所描述的器件证明带隙偏移超过60纳米，因此表明其适用于调制器和激光器或放大器的集成。该器件通过沉积在衬底上的脊上的镓铟砷/镓铟砷化物磷化物应变量子阱的大气压金属有机冷凝气相沉积生长来制造。

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