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1. 发明授权

US07277462B2 Wide tuneable laser sources 有权
标题翻译：可调谐激光源
公开(公告)号：US07277462B2
公开(公告)日：2007-10-02
申请号：US10835089
申请日：2004-04-29
申请人： Roberto Paoletti , Michele Agresti , Marco Vallone
发明人： Roberto Paoletti , Michele Agresti , Marco Vallone
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/06256 , H01S5/227 , H01S5/34373 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S5/50
摘要： A tuneable laser assembly includes a substrate having formed thereon a plurality of tuneable lasers, waveguides, an optical coupler and an optical amplifier. The lasers have active sections and distributed Bragg reflector (DBR) tuning sections and are characterised by respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The DBR tuning sections have a length in the range of about 150-200 um, are of the same optical waveguide of the waveguides, a grating strength (KL) less than about 0,5 and a high reflective (HR) coated back facet enhancing the external quantum efficiency from each said tuning sections. The active sections have a length in the range of about 250-300 um comprised of a high-gain/low-loss multi quantum well (MQW) material. The lasers have a total DBR array length of about 500 um.
摘要翻译：可调激光组件包括其上形成有多个可调谐激光器，波导，光耦合器和光放大器的衬底。激光器具有有源部分和分布式布拉格反射器（DBR）调谐部分，并且其特征在于各自的发射波长和调谐范围，使得激光器组件可以在准连续的预定波长范围内调谐。 DBR调谐部分的长度范围为约150-200μm，与波导的相同的光波导，光栅强度（KL）小于约0.5，高反射（HR）涂层的后面增强来自每个所述调谐部分的外部量子效率。有源部分的长度在约250-300μm的范围内，包括高增益/低损耗多量子阱（MQW）材料。激光器的总DBR阵列长度约为500um。

2. 发明授权

US07424041B2 Wide tuneable laser sources 有权
标题翻译：可调谐激光源
公开(公告)号：US07424041B2
公开(公告)日：2008-09-09
申请号：US10835080
申请日：2004-04-29
申请人： Marina Meliga , Alessandro Stano , Paul Marshall Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
发明人： Marina Meliga , Alessandro Stano , Paul Marshall Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： B82Y20/00 , G02B6/12004 , G02B6/13 , G02B6/2813 , H01S5/0085 , H01S5/02284 , H01S5/026 , H01S5/0265 , H01S5/0268 , H01S5/028 , H01S5/06256 , H01S5/125 , H01S5/2224 , H01S5/227 , H01S5/3406 , H01S5/34306 , H01S5/34373 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler. The method includes the steps of: using the same Multi-Quantum Well material for the Multi Quantum Well (MQW) sections of the tuneable lasers as well as for the Multi Quantum Well (MQW) amplifier, and using a common bulk material for the passive waveguides, the optical coupler and the DBR tuning sections of the lasers.
摘要翻译：一种制造可调激光器组件的方法，包括其上形成有多个可调激光器的衬底，所述可调谐激光器包括多量子阱（MQW）有源部分以及分布式布拉格反射器（DBR）调谐部分。激光器具有相应的发射波长和调谐范围，使得激光器组件可以在准连续的预定波长范围内调谐。组件还包括耦合到激光器的多个无源波导，以从其接收相应的发射波长，以及耦合到波导的光耦合器，以经由波导从激光器接收发射波长。耦合到耦合器的多量子阱（MQW）放大器放大经由光耦合器耦合的发射波长。该方法包括以下步骤：对可调激光器的多量子阱（MQW）部分以及多量子阱（MQW）放大器使用相同的多量子阱材料，并使用普通散装材料进行被动波导，光耦合器和激光器的DBR调谐部分。

3. 发明申请

US20050244994A1 Wide tuneable laser sources 有权
标题翻译：可调谐激光源
公开(公告)号：US20050244994A1
公开(公告)日：2005-11-03
申请号：US10835080
申请日：2004-04-29
申请人： Marina Meliga , Alessandro Stano , Paul Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
发明人： Marina Meliga , Alessandro Stano , Paul Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
IPC分类号： G02B6/12 , G02B6/13 , G02B6/28 , H01L21/00 , H01S5/00 , H01S5/026 , H01S5/028 , H01S5/0625 , H01S5/125 , H01S5/22 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , G02B6/12004 , G02B6/13 , G02B6/2813 , H01S5/0085 , H01S5/02284 , H01S5/026 , H01S5/0265 , H01S5/0268 , H01S5/028 , H01S5/06256 , H01S5/125 , H01S5/2224 , H01S5/227 , H01S5/3406 , H01S5/34306 , H01S5/34373 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler. The method includes the steps of: using the same Multi-Quantum Well material for the Multi Quantum Well (MQW) sections of the tuneable lasers as well as for the Multi Quantum Well (MQW) amplifier, and using a common bulk material for the passive waveguides, the optical coupler and the DBR tuning sections of the lasers.
摘要翻译：一种制造可调激光器组件的方法，包括其上形成有多个可调激光器的衬底，所述可调谐激光器包括多量子阱（MQW）有源部分以及分布式布拉格反射器（DBR）调谐部分。激光器具有相应的发射波长和调谐范围，使得激光器组件可以在准连续的预定波长范围内调谐。组件还包括耦合到激光器的多个无源波导，以从其接收相应的发射波长，以及耦合到波导的光耦合器，以经由波导从激光器接收发射波长。耦合到耦合器的多量子阱（MQW）放大器放大经由光耦合器耦合的发射波长。该方法包括以下步骤：对可调激光器的多量子阱（MQW）部分以及多量子阱（MQW）放大器使用相同的多量子阱材料，并使用普通散装材料进行被动波导，光耦合器和激光器的DBR调谐部分。

4. 发明申请

US20090124058A1 Method of Providing Electrical Separation in Integrated Devices and Related Devices 有权
标题翻译：在集成设备和相关设备中提供电气分离的方法
公开(公告)号：US20090124058A1
公开(公告)日：2009-05-14
申请号：US12357385
申请日：2009-01-21
申请人： Michele Agresti , Cesare Rigo , Marco Vallone
发明人： Michele Agresti , Cesare Rigo , Marco Vallone
IPC分类号： H01L21/44
CPC分类号： H01S5/0265 , H01S5/026 , H01S5/042
摘要： An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).
摘要翻译：集成器件包括两个部分（A，B），例如DFB激光器（A）和EAM调制器（B），它们之间具有半绝缘（SI）分离区域。分离区域（24）是作为电子上的陷阱的材料，并且被配置为阻止由于孔而在两个部分（A，B）之间的电流流动。分离区域（24）可以是在电子和空穴上充当陷阱的材料。或者，分离区域（24）是用作电子上的阱的材料，并且设置在两个部分（A，B）共同的p型衬底（20）上。

5. 发明授权

US07498613B2 Method of providing electrical separation in integrated devices and related device 失效
标题翻译：在集成设备和相关设备中提供电气分离的方法
公开(公告)号：US07498613B2
公开(公告)日：2009-03-03
申请号：US11496136
申请日：2006-07-31
申请人： Michele Agresti , Cesare Rigo , Marco Vallone
发明人： Michele Agresti , Cesare Rigo , Marco Vallone
IPC分类号： H01L29/22 , H01L31/0256 , H01L31/0296 , H01L33/00
CPC分类号： H01S5/0265 , H01S5/026 , H01S5/042
摘要： An integrated device includes two sections, such as a DFB laser and an EAM modulator, having a semi-insulating separation region therebetween. The separation region is of a material acting as a trap on electrons and configured to impede current flow between the two sections due to holes. The separation region may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region is of a material that acts as a trap on electrons and is provided over a p-type substrate common to the two sections.
摘要翻译：集成器件包括两个部分，例如DFB激光器和EAM调制器，它们之间具有半绝缘分离区域。分离区域是作为电子上的陷阱的材料，并且被配置为阻止由于孔而在两个部分之间的电流流动。分离区域可以是在电子和空穴上充当陷阱的材料。或者，分离区域是用作电子上的阱的材料，并且被提供在两个部分共同的p型衬底上。

6. 发明申请

US20120195336A1 SEMICONDUCTOR LASER DEVICE IN WHICH AN EDGE-EMITTING LASER IS INTEGRATED WITH A REFLECTOR TO FORM A SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：发射激光器的半导体激光器件与反射器集成形成表面发射半导体激光器件
公开(公告)号：US20120195336A1
公开(公告)日：2012-08-02
申请号：US13018581
申请日：2011-02-01
申请人： Rui Yu Fang , Guido Alberto Roggero , Giuliana Morello , Roberto Paoletti , Michele Agresti
发明人： Rui Yu Fang , Guido Alberto Roggero , Giuliana Morello , Roberto Paoletti , Michele Agresti
IPC分类号： H01S5/183 , H01L33/60
CPC分类号： H01S5/0071 , H01S5/026 , H01S5/028 , H01S5/12 , H01S5/18 , H01S5/22
摘要： A surface-emitting semiconductor laser device is provided that includes an edge-emitting laser formed in various layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, and a reflector formed in or on an angled side facet of the polymer material generally facing an exit end facet of the laser. Laser light passes out of the exit end facet propagates through the polymer material before being reflected by the reflector out of the device in a direction that is generally normal to the upper surface of the substrate.
摘要翻译：提供一种表面发射半导体激光器件，其包括形成在设置在半导体衬底上的各种半导体材料中的边缘发射激光器，设置在基板上的与形成边缘发射激光器的层横向相邻的聚合物材料，以及形成在聚合物材料的倾斜的侧面中或其上的反射器，该反射器大致面对激光器的出射端面。从出口端小面出射的激光通过聚合物材料传播，然后被反射器反射出装置的方向通常垂直于基板的上表面。

7. 发明授权

US07867792B2 Method of providing electrical separation in integrated devices and related devices 有权
标题翻译：在集成设备和相关设备中提供电气分离的方法
公开(公告)号：US07867792B2
公开(公告)日：2011-01-11
申请号：US12357385
申请日：2009-01-21
申请人： Michele Agresti , Cesare Rigo , Marco Vallone
发明人： Michele Agresti , Cesare Rigo , Marco Vallone
IPC分类号： H01L21/00
CPC分类号： H01S5/0265 , H01S5/026 , H01S5/042
摘要： An integrated device includes two sections (A, B), such as a DFB laser (A) and an EAM modulator (B), having a semi-insulating (SI) separation region therebetween. The separation region (24) is of a material acting as a trap on electrons and configured to impede current flow between the two sections (A, B) due to holes. The separation region (24) may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region (24) is of a material that acts as a trap on electrons and is provided over a p-type substrate (20) common to the two sections (A, B).
摘要翻译：集成器件包括两个部分（A，B），例如DFB激光器（A）和EAM调制器（B），它们之间具有半绝缘（SI）分离区域。分离区域（24）是作为电子上的陷阱的材料，并且被配置为阻止由于孔而在两个部分（A，B）之间的电流流动。分离区域（24）可以是在电子和空穴上充当陷阱的材料。或者，分离区域（24）是用作电子上的阱的材料，并且设置在两个部分（A，B）共同的p型衬底（20）上。

8. 发明申请

US20070052018A1 Method of providing electrical separation in intergrated devices and related device 失效
标题翻译：在集成设备和相关设备中提供电气分离的方法
公开(公告)号：US20070052018A1
公开(公告)日：2007-03-08
申请号：US11496136
申请日：2006-07-31
申请人： Michele Agresti , Cesara Rigo , Marco Vallone
发明人： Michele Agresti , Cesara Rigo , Marco Vallone
IPC分类号： H01L29/76
CPC分类号： H01S5/0265 , H01S5/026 , H01S5/042
摘要： An integrated device includes two sections, such as a DFB laser and an EAM modulator, having a semi-insulating separation region therebetween. The separation region is of a material acting as a trap on electrons and configured to impede current flow between the two sections due to holes. The separation region may be of a material acting as a trap both on electrons and holes. Alternatively, the separation region is of a material that acts as a trap on electrons and is provided over a p-type substrate common to the two sections.
摘要翻译：集成器件包括两个部分，例如DFB激光器和EAM调制器，它们之间具有半绝缘分离区域。分离区域是作为电子上的陷阱的材料，并且被配置为阻止由于孔而在两个部分之间的电流流动。分离区域可以是在电子和空穴上充当陷阱的材料。或者，分离区域是用作电子上的阱的材料，并且被提供在两个部分共同的p型衬底上。

9. 发明申请

US20100290489A1 ELECTRO-ABSORPTION MODULATED LASER (EML) ASSEMBLY HAVING A 1/4 WAVELENGTH PHASE SHIFT LOCATED IN THE FORWARD PORTION OF THE DISTRIBUTED FEEDBACK (DFB) OF THE EML ASSEMBLY, AND A METHOD 审中-公开
标题翻译：具有位于EML组件的分布式反馈（DFB）的前向部分中的1/4波长相位移动的电吸收式调制激光器（EML）组件，以及方法
公开(公告)号：US20100290489A1
公开(公告)日：2010-11-18
申请号：US12466439
申请日：2009-05-15
申请人： Michele Agresti , Guido Alberto Roggero , Rui Yu Fang , Roberto Paoletti
发明人： Michele Agresti , Guido Alberto Roggero , Rui Yu Fang , Roberto Paoletti
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/06226 , H01S5/0654 , H01S5/1085 , H01S5/124
摘要： An EML assembly is provided that has and EAM and a DFB, with the DFB having an asymmetric ¼ wavelength phase shift positioned at a location that is in front of the center of the periodic structure of the DFB. In addition, the EML assembly has a tilted or bent waveguide that reduces reflections occurring at the front end facet, thereby enabling the EAM to produce a relatively high POUT level while also achieving reduced chirp and high single-mode yield in the DFB. By providing the EML assembly with a tilted or bent waveguide, the reflections at the front end facet are reduced without having to use an AR coating on the front end facet that has an extremely low reflectivity. By avoiding the need to use an AR coating on the front end facet that has an extremely low reflectivity, the AR coating that is used on the front end facet can be made using standard sputter deposition techniques to enable higher manufacturing yields to be achieved.
摘要翻译：提供了一种EML组件，其具有EAM和DFB，其中DFB具有位于DFB的周期性结构的中心前方的位置处的不对称的1/4波长相移。此外，EML组件具有倾斜或弯曲的波导，其减小在前端小面处发生的反射，从而使得EAM能够产生相对较高的POUT电平，同时还实现DFB中的啁啾和高单模产量的降低。通过为EML组件提供倾斜或弯曲的波导，前端小面处的反射减小，而不必在具有极低反射率的前端小面上使用AR涂层。通过避免在具有极低反射率的前端小面上使用AR涂层的需要，可以使用标准溅射沉积技术制造用于前端小面的AR涂层，以实现更高的制造成品率。

10. 发明申请

US20050243874A1 Wide tuneable laser sources 有权
标题翻译：可调谐激光源
公开(公告)号：US20050243874A1
公开(公告)日：2005-11-03
申请号：US10835089
申请日：2004-04-29
申请人： Roberto Paoletti , Michele Agresti , Maco Vallone
发明人： Roberto Paoletti , Michele Agresti , Maco Vallone
IPC分类号： H01S3/10 , H01S5/026 , H01S5/0625 , H01S5/227 , H01S5/343 , H01S5/40 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/06256 , H01S5/227 , H01S5/34373 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S5/50
摘要： A tuneable laser assembly includes a substrate having formed thereon a plurality of tuneable lasers including distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive thereby the emissions wavelengths from the lasers. An optical amplifier is coupled to the optical coupler to amplify the emission wavelengths of the lasers coupled via the optical coupler. The tuning sections of the DBR lasers have a length in the range of about 150-200 um and are of the same optical waveguide of the waveguides routing the emission wavelengths to said optical coupler. These DBR tuning sections having a grating strength (KL) less than about 0,5 and a high reflective (HR) coated back facet enhancing the external quantum efficiency from each said tuning sections. The lasers include active sections having a length in the range of about 250-300 um comprised of a high-gain/low-loss multi quantum well (MQW) material. The lasers have a total DBR array length of about 500 nm.
摘要翻译：可调谐激光器组件包括其上形成有多个可调激光器的衬底，包括分布式布拉格反射器（DBR）调谐部分。激光器具有相应的发射波长和调谐范围，使得激光器组件可以在准连续的预定波长范围内调谐。组件还包括耦合到激光器的多个波导，以从其接收相应的发射波长，以及耦合到波导的光耦合器，从而接收来自激光器的发射波长。光放大器耦合到光耦合器以放大经由光耦合器耦合的激光器的发射波长。 DBR激光器的调谐部分的长度在约150-200μm的范围内，并且是将发射波长路由到所述光耦合器的波导的相同的光波导。这些DBR调谐部分具有小于约0.5的光栅强度（KL）和高反射（HR）涂覆的背面，从每个所述调谐部分增强外部量子效率。激光器包括长度在约250-300μm范围内的有源部分，其包括高增益/低损耗多量子阱（MQW）材料。激光器具有约500nm的总DBR阵列长度。

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