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1. 发明授权

US07424041B2 Wide tuneable laser sources 有权
标题翻译：可调谐激光源
公开(公告)号：US07424041B2
公开(公告)日：2008-09-09
申请号：US10835080
申请日：2004-04-29
申请人： Marina Meliga , Alessandro Stano , Paul Marshall Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
发明人： Marina Meliga , Alessandro Stano , Paul Marshall Charles , Claudio Coriasso , Roberto Paoletti , Michele Agresti , Marco Vallone
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： B82Y20/00 , G02B6/12004 , G02B6/13 , G02B6/2813 , H01S5/0085 , H01S5/02284 , H01S5/026 , H01S5/0265 , H01S5/0268 , H01S5/028 , H01S5/06256 , H01S5/125 , H01S5/2224 , H01S5/227 , H01S5/3406 , H01S5/34306 , H01S5/34373 , H01S5/4012 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler. The method includes the steps of: using the same Multi-Quantum Well material for the Multi Quantum Well (MQW) sections of the tuneable lasers as well as for the Multi Quantum Well (MQW) amplifier, and using a common bulk material for the passive waveguides, the optical coupler and the DBR tuning sections of the lasers.
摘要翻译：一种制造可调激光器组件的方法，包括其上形成有多个可调激光器的衬底，所述可调谐激光器包括多量子阱（MQW）有源部分以及分布式布拉格反射器（DBR）调谐部分。激光器具有相应的发射波长和调谐范围，使得激光器组件可以在准连续的预定波长范围内调谐。组件还包括耦合到激光器的多个无源波导，以从其接收相应的发射波长，以及耦合到波导的光耦合器，以经由波导从激光器接收发射波长。耦合到耦合器的多量子阱（MQW）放大器放大经由光耦合器耦合的发射波长。该方法包括以下步骤：对可调激光器的多量子阱（MQW）部分以及多量子阱（MQW）放大器使用相同的多量子阱材料，并使用普通散装材料进行被动波导，光耦合器和激光器的DBR调谐部分。

2. 发明授权

US06509580B2 Semiconductor device with current confinement structure 有权
标题翻译：具有电流限制结构的半导体器件
公开(公告)号：US06509580B2
公开(公告)日：2003-01-21
申请号：US09858677
申请日：2001-05-16
申请人： Paul Marshall Charles
发明人： Paul Marshall Charles
IPC分类号： H01L31072
CPC分类号： H01L33/145 , B82Y20/00 , H01S5/12 , H01S5/2226 , H01S5/2275 , H01S5/3434
摘要： The present invention relates to a semiconductor device with one or more current confinement regions and to a method of manufacturing such a device, particularly buried heterostructure light emitting devices such as semiconductor lasers and light emitting diodes. The device comprises an active layer, a current conduction region, one or more current confinement regions adjacent the current conduction region. The current conduction region and current confinement region are arranged to channel an applied electric current to the active layer. The or each current confinement region includes both a metal-doped current blocking structure and a p-n junction current blocking structure. The p-n current blocking structure is between the current conduction region and the metal-doped current blocking structure.
摘要翻译：本发明涉及具有一个或多个电流限制区域的半导体器件以及制造这种器件的方法，特别是掩埋的异质结构发光器件如半导体激光器和发光二极管。器件包括有源层，电流传导区域，与电流传导区域相邻的一个或多个电流限制区域。电流传导区域和电流限制区域被布置成将施加的电流传送到有源层。该或每个电流限制区域包括金属掺杂电流阻挡结构和p-n结电流阻挡结构。 p-n电流阻挡结构在电流传导区域和金属掺杂电流阻挡结构之间。

3. 发明授权

US06882780B2 Wavelength tuneable optical device 有权
标题翻译：波长可调光学器件
公开(公告)号：US06882780B2
公开(公告)日：2005-04-19
申请号：US10245421
申请日：2002-09-17
申请人： Christopher Anthony Park , Richard Mark Ash , Andrew Thomas Harker , Paul Marshall Charles
发明人： Christopher Anthony Park , Richard Mark Ash , Andrew Thomas Harker , Paul Marshall Charles
IPC分类号： G02B6/12 , G02B6/122 , G02F1/315 , H01S5/0625 , H01S5/10 , H01S5/50 , G02B6/26
CPC分类号： B82Y20/00 , G02B6/12004 , G02B6/12007 , G02B6/1225 , G02F1/315 , H01S5/06258 , H01S5/105 , H01S5/1071 , H01S5/5054 , H01S5/509
摘要： An optical device having a photonic band gap element operative such that the refractive index can be varied through application of an electrical signal. This enables the manufacture of tuneable lasers, optical add/drop multiplexers and tuneable optical wavelength converters.
摘要翻译：一种具有光子带隙元件的光学器件，其操作使得可以通过施加电信号来改变折射率。这使得可以制造可调激光器，光分插复用器和可调谐光波长转换器。

4. 发明授权

US07289545B2 Semiconductor laser with integrated heating element and method of manufacturing same 失效
标题翻译：具有集成加热元件的半导体激光器及其制造方法
公开(公告)号：US07289545B2
公开(公告)日：2007-10-30
申请号：US10995511
申请日：2004-11-24
申请人： Paul Marshall Charles
发明人： Paul Marshall Charles
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0261 , H01S5/024 , H01S5/06837
摘要： A semiconductor laser structure has a laser active region and side trenches extending along the laser active region. At least one heatable stripe, in at least one of the side trenches, is connected to an electric power source. The amount of energy the source supplies to the stripe controls the laser active region temperature to control and offset effects of active region temperature on the emitted wavelength.
摘要翻译：半导体激光器结构具有激光有源区和沿着激光有源区延伸的侧沟槽。在至少一个侧沟槽中的至少一个可加热条纹连接到电源。源极向条纹供电的能量控制激光有源区温度，以控制和补偿有源区温度对发射波长的影响。

5. 发明授权

US06335559B1 Semiconductor device cleave initiation 失效
标题翻译：半导体器件切割引发
公开(公告)号：US06335559B1
公开(公告)日：2002-01-01
申请号：US09349253
申请日：1999-07-08
申请人： Paul Marshall Charles
发明人： Paul Marshall Charles
IPC分类号： H01L2348
CPC分类号： H01L31/18 , H01L21/78 , H01L33/005 , H01L2924/0002 , H01S5/0202 , H01L2924/00
摘要： The present invention relates to a method of etching a semiconductor wafer (100), particularly of a compound semiconductor, in order to facilitate cleaving of devices (200) from the wafer (100) , and to devices (200) cleaved by such a method. A semiconductor device (200) is cleaved from a wafer (100) and comprises a substrate (106) and grown upon the substrate (106) one or more layers (108, 110, 112, 116, 122) , the cleaves (150, 151, 153, 154) thereby defining two pairs of parallel edges (201, 202; 203; 204) of the device (200). Each of the cleaves is guided by a groove (163, 164; 166, 266) etched through the grown layers (108, 110, 112, 116, 122) and partly into the substrate (106).
摘要翻译：本发明涉及一种蚀刻半导体晶片（100），特别是化合物半导体的方法，以便于从晶片（100）切割器件（200），以及通过这种方法切割的器件（200）。半导体器件（200）从晶片（100）切割并且包括衬底（106）并且在衬底（106）上生长一个或多个层（108,110,112,116,122），所述劈裂（150，从而限定设备（200）的两对平行边缘（201,202; 203; 204）。每个裂缝由通过生长层（108,110,112,116,122）蚀刻的凹槽（163,164,166,266）引导，并且部分地被蚀刻到衬底（106）中。

6. 发明授权

US06289030B1 Fabrication of semiconductor devices 失效
标题翻译：半导体器件的制造
公开(公告)号：US06289030B1
公开(公告)日：2001-09-11
申请号：US09015010
申请日：1998-01-28
申请人： Paul Marshall Charles
发明人： Paul Marshall Charles
IPC分类号： G01S528
CPC分类号： H01L31/02161 , H01S5/0203 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/0425
摘要： A method of fabricating a semiconductor optical device is provided comprising the steps of depositing planar layers of semiconductor material to form a semiconductor wafer having an optically active region, etching through the optically active region to form a plurality of facets, and simultaneously coating at least one facet and an upper surface of the semiconductor wafer with a coating layer having a thickness and composition such that, during operation of the semiconductor device, the coating layer acts both as a facet coating and as a wafer surface coating. Where the coating layer comprises a dielectric, the layer acts both as an anti-reflection facet coating and as a passivating layer. Where the coating layer comprises a metal, the layer acts both as a high-reflectivity facet coating and as an electrical contacting layer. In a first embodiment the semiconductor device comprises a laser and in a second embodiment comprises a photodetector.
摘要翻译：提供一种制造半导体光学器件的方法，包括以下步骤：沉积半导体材料的平面层以形成具有光学活性区域的半导体晶片，通过光学活性区域蚀刻以形成多个刻面，同时涂覆至少一个小面和半导体晶片的上表面，其具有具有厚度和组成的涂层，使得在半导体器件的操作期间，涂层既作为小面涂层又用作晶片表面涂层。当涂层包含电介质时，该层既作为抗反射面涂层又用作钝化层。当涂层包含金属时，该层既作为高反射性面涂层又作为电接触层。在第一实施例中，半导体器件包括激光器，并且在第二实施例中包括光电检测器。

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