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1. 发明授权

US07138158B2 Forming a dielectric layer using a hydrocarbon-containing precursor 失效
标题翻译：使用含烃前体形成介电层
公开(公告)号：US07138158B2
公开(公告)日：2006-11-21
申请号：US10377061
申请日：2003-02-28
申请人： Robert P. Meagley , Michael D. Goodner , Andrew W. Ott , Grant M. Kloster , Michael L. McSwiney , Bob E. Leet
发明人： Robert P. Meagley , Michael D. Goodner , Andrew W. Ott , Grant M. Kloster , Michael L. McSwiney , Bob E. Leet
IPC分类号： B05D3/10 , C23C16/00
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633
摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.
摘要翻译：在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。

2. 发明授权

US08003293B2 Pixelated photoresists 有权
标题翻译：像素化的光刻胶
公开(公告)号：US08003293B2
公开(公告)日：2011-08-23
申请号：US10956284
申请日：2004-09-30
申请人： Robert P. Meagley , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney
发明人： Robert P. Meagley , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney
IPC分类号： G03F7/00 , G03F7/004 , G03F7/029 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.
摘要翻译：光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

3. 发明授权

US07241707B2 Layered films formed by controlled phase segregation 有权
标题翻译：通过控制相分离形成的层状膜
公开(公告)号：US07241707B2
公开(公告)日：2007-07-10
申请号：US11060843
申请日：2005-02-17
申请人： Robert P. Meagley , Michael J. Leeson , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney , Shan C. Clark
发明人： Robert P. Meagley , Michael J. Leeson , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney , Shan C. Clark
IPC分类号： H01L21/469
CPC分类号： H01L21/76808 , G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/76822 , H01L21/76829 , H01L21/76834 , H01L21/76835
摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
摘要翻译：集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。然后将组合物诱导相分离成至少第一连续相和第二连续相。组合物可以由相分离成不同连续层的两种或更多种组分形成。组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。相分离可以用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，电介质层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和衬底封装上的保护层，以及光干涉层。

4. 发明授权

US07452728B2 Metal ion separation from aqueous solutions using photoswitchable ionophores 有权
标题翻译：使用可开关的离子载体从水溶液中分离金属离子
公开(公告)号：US07452728B2
公开(公告)日：2008-11-18
申请号：US10850414
申请日：2004-05-20
申请人： Bob E. Leet , Robert P. Meagley , Michael D. Goodner , Michael L. McSwiney
发明人： Bob E. Leet , Robert P. Meagley , Michael D. Goodner , Michael L. McSwiney
IPC分类号： G01N33/20
CPC分类号： C02F1/683 , C02F1/26 , C02F1/30 , C02F1/32 , C02F2101/20 , C22B3/0097 , C22B3/24 , Y02P10/234 , Y02W10/37 , Y10T436/25375
摘要： Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.
摘要翻译：描述了从水溶液中浓缩和去除金属离子的方法和系统，包括用可光开关的离子载体处理水溶液。

5. 发明授权

US07235344B2 Energy harvesting molecules and photoresist technology 失效
标题翻译：能量收集分子和光刻胶技术
公开(公告)号：US07235344B2
公开(公告)日：2007-06-26
申请号：US10881475
申请日：2004-06-30
申请人： Robert P. Meagley , Michael D. Goodner , Robert E. Leet , Michael L. McSwiney
发明人： Robert P. Meagley , Michael D. Goodner , Robert E. Leet , Michael L. McSwiney
IPC分类号： G03C1/73 , G03C1/74 , G03F7/09 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
摘要翻译：包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子仅捕获第一部分的横截面。一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

6. 发明授权

US07071125B2 Precursors for film formation 失效
标题翻译：成膜前体
公开(公告)号：US07071125B2
公开(公告)日：2006-07-04
申请号：US10947820
申请日：2004-09-22
申请人： Michael L. McSwiney , Huey-Chiang Liou , Michael D. Goodner , Robert E. Leet , Robert P. Meagley
发明人： Michael L. McSwiney , Huey-Chiang Liou , Michael D. Goodner , Robert E. Leet , Robert P. Meagley
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02222 , C23C16/22 , H01L21/02123 , H01L21/02203 , H01L21/02211 , H01L21/3125 , H01L21/3185
摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.
摘要翻译：一种方法，包括在存在电路基板的情况下引入前体，以及形成包含所述前体在所述基底上的反应产物的膜，其中所述前体包括包含所述膜的主要种类和改性剂的分子。一种方法，包括在存在电路基板的情况下引入前体，所述前体包括作为单一源的主要物质和膜改性剂，以及在所述电路基底上形成膜。一种包括半导体衬底和半导体衬底的表面上的膜的设备，所述膜包括包含主要物质和改性剂的分子的前体的反应产物。

7. 发明授权

US07470450B2 Forming a silicon nitride film 有权
标题翻译：形成氮化硅膜
公开(公告)号：US07470450B2
公开(公告)日：2008-12-30
申请号：US10764193
申请日：2004-01-23
申请人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
发明人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
IPC分类号： C23C16/00
CPC分类号： C07F7/025 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274
摘要： A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.
摘要翻译：氮化硅膜可以使用常规沉积技术和所选择的源用作硅前体而沉积在工件上。也可以选择氮前体用于膜沉积。使用所选择的前体，沉积温度可以为500℃以下。

8. 发明授权

US07125582B2 Low-temperature silicon nitride deposition 失效
标题翻译：低温氮化硅沉积
公开(公告)号：US07125582B2
公开(公告)日：2006-10-24
申请号：US10631627
申请日：2003-07-30
申请人： Michael L. McSwiney , Michael D. Goodner
发明人： Michael L. McSwiney , Michael D. Goodner
IPC分类号： C23C16/00
CPC分类号： C23C16/345
摘要： A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.
摘要翻译：一种方法，包括在高达550℃的温度下组合硅源前体和氮源前体; 并形成氮化硅膜。包括室的系统耦合到所述室的硅前体源; 控制器，被配置为控制从所述硅前体源引入所述室中的硅前体; 以及耦合到控制器的存储器，包括机器可读介质，其具有体现在其中的机器可读程序，用于引导系统的操作，该机器可读程序包括用于控制第二前驱源的指令，以将有效量的硅前体引入该室温度高达550°C

9. 发明申请

US20120091542A1 METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：三氧化锗栅介质的沉积方法及其形成的结构
公开(公告)号：US20120091542A1
公开(公告)日：2012-04-19
申请号：US13330569
申请日：2011-12-19
申请人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
发明人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
IPC分类号： H01L29/78
CPC分类号： C23C16/45531 , C23C16/405 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L29/517 , Y10T428/24744
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括将第一金属源，第二金属源和氧源引入室中，然后形成包含第一金属的第一百分比，第二金属的第二百分比以及第二金属的第三百分比的三元氧化物膜氧。

10. 发明授权

US07704858B2 Methods of forming nickel silicide layers with low carbon content 失效
标题翻译：形成低碳含量的硅化镍层的方法
公开(公告)号：US07704858B2
公开(公告)日：2010-04-27
申请号：US11731275
申请日：2007-03-29
申请人： Michael L. McSwiney , Matthew V. Metz
发明人： Michael L. McSwiney , Matthew V. Metz
IPC分类号： H01L21/322 , H01L21/44
CPC分类号： C23C16/45534 , C23C16/18 , C23C16/45542 , H01L29/665 , H01L29/78
摘要： A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content.
摘要翻译：在具有低碳含量的MOS器件上形成硅化镍层的方法包括在ALD反应器内提供衬底并执行ALD工艺循环以在衬底上形成镍层，其中ALD工艺循环包括将镍前体进入反应器，在镍前体之后吹扫反应器，将氢和硅烷的混合物脉冲进入反应器，并在氢和硅烷脉冲之后清洗反应器。可以重复ALD工艺循环，直到镍层达到所需的厚度。用于ALD工艺中的硅烷作为有利碳的吸收剂起作用，产生具有低碳含量的镍层。然后镍层可以退火以形成具有低碳含量的硅化镍层。

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